Cryogenic thermo-optic thin-film lithium niobate modulator with an NbN superconducting heater

We propose and demonstrate a cryogenic thermo-optic(TO) modulator in x-cut thin-film lithium niobate(TFLN) with an NbN superconducting heater. Compared to a conventional metal heating electrode, a fast and energy-efficient modulation is obtained by placing an NbN superconducting heating electrode above the TFLN waveguide. The transition of the NbN superconducting electrode between superconducting and normal states turns the heating and cooling processes from continuous to discontinuous change. T...     

Compact SOI arrayed waveguide grating demultiplexer with broad spectral response

A compact eight-channel flat spectral response arrayed waveguide grating (AWG) multiplexer based on silicon-on-insulator (SOI) materials has been fabricated on the planar lightwave circuit (PLC). The 1-dB bandwidth of 48 GHz and 3-dB bandwidth of 69 GHz are obtained for the 100 GHz channel spacing. Not only non-adjacent crosstalk but also adjacent crosstalk are less than −25 dB. The on-chip propagation loss range is from 3.5 to 3.9 dB, and the total device size is 1.5 × 1.0 cm².     

Optimization of PDMS network for a fast response and sensitive actuation material applied in a MEMS spatial light modulator

The cross-linked networks of linear vinyl-terminated poly(dimethylsiloxane) (PDMS) with trimethylsiloxy-terminated methyhydrosiloxane–dimethylsiloxane copolymer (cross-linker) were investigated by tuning the cross-linker concentration, the chain length of linear PDMS and the functionality of the cross-linker. Response time and elastic modulus of the cross-linked PDMS elastomer were characterized by home-made measurement systems and analyzed based on their network topologies. An optimized PDMS elastomer, which has response time of 9 μs and elastic modulus of 601 kPa, was utilized as the actuation material in a MEMS spatial light modulator (SLM). The fabrication processes were described. This polymer based SLM has shown fast response time (9 μs) and successfully diffracted light into higher orders with 84% first-order diffraction efficiency.     

快响应化学气相沉积金刚石软X射线探测器的研制

利用高品质化学气相沉积(CVD)金刚石,采用微带线结构研制了CVD金刚石软X射线探测器。利用脉宽为10 ps的激光器进行了探测器响应时间的测量,获得半宽度为115 ps的信号,经过计算得到CVD金刚石探测器的上升时间为49 ps。在激光原型装置实验中,通过与软X射线能谱仪测量结果的相互比对,证实所研制的CVD金刚石探测器是一种响应时间快、信噪比高、性能可靠的软X射线探测器。     

快响应化学气相沉积金刚石软X射线探测器的研制

利用高品质化学气相沉积(CVD)金刚石,采用微带线结构研制了CVD金刚石软X射线探测器。利用脉宽为10 ps的激光器进行了探测器响应时间的测量,获得半宽度为115 ps的信号,经过计算得到CVD金刚石探测器的上升时间为49 ps。在激光原型装置实验中,通过与软X射线能谱仪测量结果的相互比对,证实所研制的CVD金刚石探测器是一种响应时间快、信噪比高、性能可靠的软X射线探测器。     

Determination of thermo-optic coefficient in liquids with fiber Bragg grating refractometer

In this work the thermo-optic coefficients of hydrocarbon samples have been determined using etched fiber Bragg grating (FBG), where the effective refractive index (RI) of the fundamental mode becomes dependent on the surrounding refractive index. The technique is based on the cross-sensitivity that the device presents to temperature and refractive index. The thermal response of FBG is characterized for samples with different refractive indices. The inherent temperature effects are distinguished from the RI, due to induced effects changes in the refractive index caused by the thermo-optic effect. For comparison purposes, literature data has been used to work with such parameters for water. The parameter obtained for ethanol (−3.99 ± 0.20) × 10⁻⁴ °C⁻¹ at 1550 nm is in close proximity with the literature data, −4 × 10⁻⁴ °C⁻¹, in the visible range.     

Analysis of temperature profiles of thermo-optic waveguides

The temperature profiles of thermo-optic waveguides are analyzed by the finite element method. The heat generated by a thin-film heater causes the temperature of a nearby waveguide to increase. The analysis results show that thermal coupling is a function of the waveguide spacing and depth. Thermal coupling increases with the waveguide depth but decreases with the waveguide spacing. Thermal coupling could be reduced by placing a cooler on the adjacent waveguide or etching a deep trench between the waveguides. The cooler can reduce the coupling, but it is not effective for deep waveguides. For the trenched structure, the temperature of the heated waveguide increases as the trench depth increases; however, the temperature of the nearby waveguide will decrease.     

Miniature 10 kHz thermo-optic delay line in silicon

The scanning delay line is a key component of time-domain optical coherence tomography systems. It has evolved since its inception toward higher scan rates and simpler implementation. However, existing approaches still suffer from drawbacks in terms of size, cost, and complexity, and they are not suitable for implementation using integrated optics. In this Letter, we report a rapid scanning delay line based on the thermo-optic effect of silicon at λ = 1.3 μm manufactured around a generic planar lightwave circuit technology. The reported device attained line scan rates of 10 kHz and demonstrated a scan range of 0.95 mm without suffering any observable loss of resolution (15 μm FWHM) owing to depth-dependent chromatic dispersion.     

Impulse response of Ge_2Sb_2Te_5-based ultrafast photodetector integrated with SOI waveguide

The impulse response for a phase-change material Ge_2Sb_2Te_5(GST)-based photodetector integrated with a silicon-on-insulator(SOI) waveguide is simulated using finite difference time domain method. The current is calculated by solving the drift-diffusion model for short pulse(～10 fs) excitation for both of the stable phases.Full width at half-maximum values of less than 1 ps are found in the investigation. The crystalline GST has higher 3 dB bandwidth than the amorphous GST at a 1550 nm wavelength with responsivities of 21 A/W and18.5 A/W, respectively, for a 150 nm thick GST layer biased at 2 V. A broad spectrum can be utilized by tuning the device using the phase-change property of material in the near infrared region.     

SOI新结构——SOI研究的新方向

SOI(silicon-on-insulator绝缘体上单晶硅薄膜)技术已取得了突破性的进展,但一般SOI结构是以SiO2作为绝缘埋层,以硅作为顶层的半导体材料,这样导致了一些不利的影响,限制了其应用范围.为解决这些问题和满足一些特殊器件/电路的要求,探索研究新的SOI结构成为SOI研究领域新的热点.如SOIM,GPSOI,GeSiOI,Si on AlN, SiCOI, GeSiOI,SSOI等.文章将结合作者的部分工作,报道SOI新结构研究的新动向及其应用.     

SOI新结构——SOI研究的新方向

SOI（silicon-on-insulator：绝缘体上单晶硅薄膜）技术已取得了突破性的进展，但一般SOI结构是以SiO2作为绝缘埋层，以硅作为顶层的半导体材料，这样导致了一些不利的影响，限制了其应用范围。为解决这些问题和满足一些特殊器件／电路的要求，探索研究新的SOI结构成为SOI研究领域新的热点。如SOIM，GPSOI，GeSiOI，SionAlN，SiCOI，GeSiOI，SSOI等。文章将结合作者的部分工作，报道SOI新结构研究的新动向及其应用。     

Low electric power drived thermo-optic multimode interference switches with tapered heating electrodes

A novel thermo-optic multimode interference (MMI) switch with a tapered heating electrode was proposed and the performance of the switch was simulated. An analytical steady-state heat-conduction model is also presented. In the design, one tapered heating electrode is used to alter the refractive index in the multimode slab region to realize the switching function. The simulation results indicate that the MMI switch can provide high extinction ratio, and good polarization- and wavelength-independence. The electric power consumption for the MMI switch is half of that of a switch with a straight heating electrode and similar to that of a Mach-Zehnder interferometer switch.     

Temperature compensation of optical microresonators using a surface layer with negative thermo-optic coefficient

We theoretically investigate the feasibility of using a surface layer with a negative thermo-optic coefficient to compensate the thermal drift of a resonant frequency in an optical microresonator. Taking a fused-silica microsphere as an example, our analysis has shown that the thermal drift of a whisper-gallery mode can be fully compensated by such a surface layer. We analyze and compare the compensation performances by using different materials as the surface layer.     

Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented.At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure.The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown.The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.     

Simulation of ZnO-coated SOI microring resonant shift response to ethanol and ammonia

A compact silicon-on-insulator microring resonator coated with porous ZnO layer for gas sensing is proposed in this paper. Based on the sensing system designed, we simulated the output spectra of two different sample gases, ethanol vapor and ammonia gas. The variable gas concentration we choose in this work range from 0 to 3‰. The molecule sizes of them are in different orders of magnitude, leading the sensitivity curves to show thoroughly different trends. The significant difference of two curves suggests that these two types of reducing gas obey different absorption principles depending on the size disparity between gas molecules and ZnO nanocrystals coated on ridge waveguide.     

Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD （fully-depleted） SIMOX （Separation by Implanted Oxygen） SOI （Silicon-on-insulator） wafers is presented. At 1 Mrad（Si） radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.     

Transverse MIR fast response in PbSe films

Under lightening, anisotropic semiconductor or semimetal films can show large transverse voltage. PbSe and PbS films have a room temperature intense sub nsec response ( V/MW) in the 10µm region due to free carrier photon drag, but the effective direct matched response on a 50 impedance is lower ( 0.1 V/MW for 1 cm² film) because of the high film resistance (> KW). CO₂ 500ps mode locked pulses are easily detected in the scope limit.     

栅长对PDSOINMOS器件总剂量辐照效应影响的实验研究

本文对PDS01NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理．研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化．PDSOI器件的局部浮体效应是造成不同栅长器件辐照后输出特性变化不一致的主要原因．短沟道器件输出特性的击穿电压更低．在关态偏置条件下,由于背栅晶体管更严重的辐射效应,短沟道SOI器件的电离辐射效应比同样偏置条件下长沟道器件严重．     

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Low frequency noise behaviors of partially depleted silicon-on-insulator(PDSOI) n-channel metal-oxide semiconductors(MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10V2·Hz-1and 2.7×10-8V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017cm-3·e V-1to 6.16×1018cm-3·e V-1. Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92×10-5to 1.34×10-2after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.     

Hybrid polymer/silica thermo-optic vertical coupler switches

Thermo-optic 1×2 vertical coupler switches (VCSs) using a hybrid polymer/silica integration technology were designed using a finite element method and a coupled mode method for different refractive index contrasts. The multilayer structures were optimized by thermal analysis. Based on these designs and simulations, hybrid polymer/silica thermo-optic 1×2 VCSs exhibiting low insertion loss, low crosstalk, low switching power and polarisation independence were demonstrated. Based on this building block, a 1×8 VCS has been fabricated. Received: 21 May 2001 / Published online: 23 October 2001