超大规模集成电路硅片溶液清洗技术的进展

本文综述了超大规模集成电路制造过程中硅片溶液清洗技术的研究历史及现状, 并对技术的未来发展进行了展望。     

Graetzel型光电化学太阳能电池(PEC)研究进展*

本文对Graetzel 型PEC 中纳米晶半导体电极的表面修饰, 纳米晶网络半导体电极溶液界面及界面电荷转移动力学特性方面的研究进行了综述, 介绍了Graetzel 型PEC 的结构组成及工作原理并对今后研究工作的重点提出一些建议。     

与生物医学植入器件中的神经电刺激过程相关的电化学研究(英文)

生物医学工程、微电子加工技术和神经科学的进展推动了用于神经电刺激的新型和先进的生物医学器件的问世,使各类患者的某些感官功能得以恢复,并改善了患者的生活质量.在这些生物医学器件中,人工耳蜗植入器件、人工视觉植入器件、深层脑部刺激器件和脊髓刺激器件都取得了很大进展.刺激电极是生物医学植入器件中的关键部件之一.当刺激电极与活体组织相接触时,形成了电子器件和生物体组织间的接触界面.本文首先以耳蜗植入器件和视觉植入器件为例,简要介绍了生物医学植入器件的工作原理和现状.在此基础上,着重对神经电刺激器件所涉及的电化学概念、测试方法及其进展进行了评述.介绍了电刺激和电极/活体组织界面上电荷注入的基本原理和机制.也对常用的电极材料和微电极加工技术进行了评介.讨论了植入式器件研发过程中所遇到的与电化学相关的挑战,诸如电极反应、电极阻抗、电荷注入容量、微电极阵列、电极腐蚀以及生物兼容性等.此外,也讨论了微型传感器和微型生物传感器在植入式器件中的应用前景.刺激电极长期处于活体组织内的苛刻条件下会渐渐失效,腐蚀、氧化和脱壳等情况的出现都会降低器件的使用寿命,甚至危及机体.本文也对此进行了讨论.对设计和加工所面临挑战的清醒认识促使包括电化学家在内的多学科专家和工程技术人员共同努力,以推进神经刺激生物医学植入器件的长足进展和实际应用,使感官功能失效的患者得以受惠.     

碳钢在NaHCO_3溶液中的阳极极化行为(英文)

研究碳钢在NaHCO3溶液中的阳极极化行为. 极化曲线测试表明,在 (0. 05 ~1. 0mol/L)NaHCO3浓度范围内,碳钢的阳极极化曲线都显示 2个电流峰和 2个钝化区,当HCO3-浓度低于 0. 1mol/L时,两电流峰相距很近,致使第 1个钝化区不易观察到. 而当HCO3-浓度>0. 1mol/L后,其第 1电流峰峰电流愈加上扬,而第 2电流峰峰电流反而下降. XPS分析表明,在较高电位下碳钢形成的表面膜,其外层主要成分为Fe2O3,而内层组成主要含Fe(Ⅱ)和Fe(Ⅲ)氧化物.     

Cu-In二元金属催化剂上CO2电化学还原 (英文)

石油、天然气和煤等化石能源的转化利用不可避免排放大量的CO₂,造成一系列生态和环境问题.CO₂电化学还原可以在温和反应条件下将CO₂转化为CO或甲酸等,近年来受到研究者广泛关注,但因CO₂具有很稳定的化学结构,CO₂电化学还原要求催化剂具有高的活性,选择性和稳定性.贵金属如金和钯可以有效地将CO₂转化为相应的燃料如CO和甲酸等,但贵金属昂贵的价格限制了其大规模应用,所以迫使人们寻找非贵金属催化剂来替代它们.铟及其合金被应用于CO₂电化学还原生成甲酸,但在低过电位下,这些催化剂的电流密度和选择性都不理想.铜基催化剂也能催化CO₂电化学还原生成甲酸,但在短时间内稳定性较差.因此,需要进一步提高In和Cu催化剂上CO₂电化学还原的电流密度和稳定性.一种可能的解决方案是构建Cu-In双金属催化剂,通过两者的协同作用,有望提升在低过电位下CO₂电化学还原生成甲酸的电流密度和稳定性...     

双电层电容器电化学阻抗谱的实验研究(英文)

电化学阻抗谱(EIS)是一种很有用的研究电化学性能的技术.理想的双电层电容器(EDLC)阻抗谱的尼奎斯特图由中高频的45°线和低频的与实轴垂直的直线组成,可以用孔径分布-传输线模型来解释.然而,在研究工作中还发现,在阻抗谱的高频区出现了半圆弧区域,为此,提出的等效模型认为半圆弧可以归因于活性材料之间的接触电阻和接触电容,以及电极与集流体之间的接触电阻与接触电容.还研究了充电过程、活性炭和电解液的电导率、导电添加剂和粘结剂的含量、隔膜、活性物质附载量和极片加压等因素对阻抗谱的影响.其中,充电截止电压、活性炭的电导率、导电添加剂的含量和极片加压对半圆弧部分影响较为显著.     

对甲苯磺酸铜及其配合物电化学行为研究(英文)

本文合成了对甲苯磺酸铜,并应用热重(TG)和差示扫描量热法(DSC)进行分析.该铜盐容易脱除全部结晶水,且在空气中不潮解,如与乙醇胺形成等摩尔配合物,则在DMSO和DMF溶剂中能催化1,1′ 联 2 萘酚的氧化,但在H2O或CH3OH溶剂中则不发生反应.此外,还分别研究了该铜盐及其它铜盐与乙醇胺(1∶1)的配合物在DMSO、DMF、CH3OH和H2O中的电化学行为和催化活性.实验表明,铜胺配合物的两步单电子还原过程对催化氧化1,1′ 联 2 萘酚是必要的条件.     

应用扫描电化学显微镜研究极化液/液界面上的电子转移反应

将含有氧化还原电对的水溶液滴涂在铂盘电极表面, 然后将该电极插入到1,2-二氯乙烷溶液中, 形成稳定的油/水界面. 液滴中的K3Fe(CN)6和K4Fe(CN)6氧化还原电对既可以作为水相中的参比电对参与控制液/液界面上的电势差, 同时又可以作为水相的电子授受体参与界面上的电子转移反应. 结合扫描电化学显微镜电化学系统的特点, 利用其双恒电位仪分别控制界面电势差和现场扫描的优点, 通过扫描电化学显微镜的渐进曲线得到了不同界面电势差控制的电子转移反应速率常数. 实验结果表明, 应用此方法获得的液/液界面可以被外加电位极化, 在一定的电势差范围内, 反应速率常数与界面电势差的关系遵守Butler-Volmer公式.     

用于电化学界面研究的共焦显微拉曼光谱技术(英文)

系统地介绍了将共焦显微拉曼光谱系统用于电化学界面研究的方法 ,包括铂电极的粗糙和电化学拉曼电解池的设计 .进行了铂上氢、氧和氯共吸附的拉曼光谱研究 .通过对甲醇氧化过程的现场跟踪 ,提出检测界面区溶液浓度变化和计算溶液 pH值的方法 .实验表明拉曼光谱技术可作为研究实际应用体系的重要工具 .     

Pt-Ni与Pd-Ni纳米薄膜的电化学制备和乙醇电催化性能研究(英文)

通过电沉积法在Ti基体上制备具有纳米结构的Pt-Ni和Pd-Ni薄膜,前者呈纳米花瓣形状,厚度为10～20 nm,后者主要由纳米颗粒组成,大小为50～60 nm.XRD测试结果显示,Pt-Ni和Pd-Ni纳米薄膜结晶程度较差.循环伏安法测试薄膜对乙醇电催化氧化的性能,结果表明Pt-Ni和Pd-Ni纳米薄膜可使乙醇起始氧化电位分别负移至-0.74 V和-0.71 V,且在碱性介质中加Ni可提高催化剂的活性和抗毒化性能.     

多孔与平面硅电极界面的电化学行为

研究了重掺杂n-型单晶硅(CSi)在氢氟酸体系中生成多孔硅(PSi)的电化学行为,根据线性极化曲线,选取不同的电流密度,采用恒电流阳极极化法,制备了一系列多孔硅层。利用扫描电子显微镜对其进行了表面和断面形貌的表征,通过线性扫描极化技术和计时电位法,比较了单晶硅电极和多孔硅电极的电化学行为,分析了多孔硅形成前后的塔菲尔曲线和计时电位曲线,给出了多孔硅形成过程中的重要电化学参数,如腐蚀电流、开路电位、塔菲尔斜率等。并对其进行深入分析,根据实验结果,提出了单晶硅电极/电解质界面和多孔硅电极/电解质界面的结构模型,并利用该模型讨论了两种电极界面的电化学特性。     

n型半导体硅电极表面Au的电化学成核机理

在成功实现半导体硅表面电沉积致密金膜的柠檬酸盐镀金实际应用体系中,运用循环伏安和电位阶跃法研究了Au在n型Si(111)电极表面的电沉积过程和成核机理.结果表明,在该体系中, Au在Si表面呈现不可逆电极过程,成核过电位达到250 mV;根据Cottrell方程求得扩散系数D = (1.81 ± 0.14) × 10^-4 cm₂·s^-1;运用Scharifker-Hills (SH)理论模型对比分析拟合实验结果,表明Au在n型Si表面遵循扩散控制下的三维连续成核机理;通过扫描电子显微镜观察Au初期成核、生长形貌,进一步证实了Au的三维连续成核机制,并讨论了阶跃电位和阶跃时间对Au核形貌和密度的影响.     

Structures and Properties of Silicon Oxide Clusters by Theoretical Investigations

In this paper, we outline our computational work in the area of silicon oxide clusters. To reduce the computational cost, we designed an economic basis set for silicon oxide systems, and reliable structures were obtained by this approach. To reveal the formation mechanism of silicon nanowires, we investigated the structures and properties of silicon suboxide clusters in particular monoxide clusters that play an important role in the oxide-assisted growth. And to improve our understanding of the silicon dioxide clusters and to bridge the gap between gas phase and solid phase silica, we proposed several models based on the two-membered ring (2MR), three-membered ring (3MR), four-membered ring (4MR), the hybrid of the 2MR and 3MR, or the 3MR and 4MR.     

硬脂酸钠在油/水界面自组装膜的电化学研究

应用循环伏安法,以铜离子为探针研究硬脂酸钠在油/水界面上的自组装过程.结果表明,硬脂酸钠在蓖麻油/水界面上自组装,经4种聚集状态而达到完整的有序单层膜.Cu2+离子在涂蓖麻油电极上的氧化是完全受吸附控制,而在表面活性剂硬脂酸钠自组装膜的油/水界面上,则其电极过程受扩散和吸附两者混合控制.循环伏安测试给出,峰电流ip随扫描速率v变化的拟合方程为:ip=9.214?3.889v1/2+0.5809v,r=0.9978.     

单晶硅上化学气相沉积铜薄膜的机理研究

A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu(hfac)2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode (island), and then transforms to Stranski-Rastanov mode (layer-by-layer plus island).The mechanism of Cu nucleation on silicon (100) substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu(hfac) formed by the thermal dissociation of Cu(hfac)2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu(hafc)2 and H2 occurs.     

Theoretical Investigation of the Solid State Reaction of Silicon Nitride and Silicon Dioxide forming Silicon Oxynitride (Si2N2O) under Pressure

The high‐pressure behavior of Si₂N₂O is studied for pressures up to 100 GPa using density functional theory calculations. The investigation of a manifold of hypothetical polymorphs leads us to propose two dense phases of Si₂N₂O, succeeding the orthorhombic ambient‐pressure polymorph at higher pressures:a defect spinel structure at moderate pressures and a corundum‐type structure at very high pressures. Taking into account the formation of silicon oxynitride from silicon dioxide and silicon nitride and its pressure dependence, we propose five pressure regions of interest for Si₂N₂O within the pseudo‐binary phase diagram SiO₂‐Si₃N₄: (i) stability of the orthorhombic ternary phase of Si₂N₂O up to 6 GPa, (ii) a phase assemblage of coesite, stishovite, and β‐Si₃N₄ between 6 and 11 GPa, (iii) a possible defect spinel modification of Si₂N₂O between 11 and 16 GPa, (iv) a phase assemblage of stishovite and γ‐Si₃N₄ above 40 GPa, and (v) a possible ternary Si₂N₂O phase with corundum‐type structure beyond 80 GPa. The existence of both ternary high‐pressure phases of Si₂N₂O, however, depends on the delicate influence of configurational entropy to the free energy of the solid state reaction.     

新型水溶性咪唑基硅量子点制备及用于果蔬中痕量铜的荧光检测

硅量子点因其极佳的亲生物性和光学性能成为纳米材料新宠,但传统硅量子点水溶性差限制了它的广泛应用。本实验以三甲基硅咪唑为硅前驱体采用水热法制备水溶性咪唑基硅量子点。相对于硼氢化钠、抗坏血酸、牛血清蛋白、半胱氨酸和柠檬酸,柠檬酸钠作为还原剂和稳定剂制得的硅量子点荧光发射最强。合成反应于220℃下可在2 h内完成,所制备的硅量子点水溶性好,平均粒径为2.6 nm,红外分析证实其表面存在游离的咪唑基。研究表明,硅量子点能与铜离子相互作用导致荧光强度的明显下降。考察不同温度下Cu2+对硅量子点荧光的猝灭行为,发现荧光猝灭程度随温度升高而增大。这说明荧光下降属于静态猝灭,即Cu2+与硅量子点上的咪唑基作用形成稳定配合物。此外,共振光散射分析还揭示荧光猝灭过程伴随着粒子团聚。基于硅量子点的荧光猝灭行为,建立了痕量铜的荧光检测方法。当Cu2+浓度在0.04~2400μmol/L之间,硅量子点的荧光强度随Cu2+浓度的增加而线性下降,检出限(S/N=3)达1.29×10-8 mol/L。本方法具有高的灵敏度、选择性和重现性,已应用于果蔬中痕量铜的荧光检测。     

Chemical Vapor Deposition of Silicon Carbide and Silicon Nitride—Chemistry's Contribution to Modern Silicon Ceramics

Pure silicon carbide and silicon nitride have valuable properties in bulk pore-free form; however, their industrial exploitation has hardly been possible so far. Neither compound can be melted or sintered in pure form; hot pressing or sintering at normal pressure requires the presence of additives; and the reaction-sintering process in which only Si and C or Si and N are employed as additives affords porous materials.–The novel process of chemical vapor deposition has partly overcome the drawbacks of the previous methods. In the new process SiC is produced, e.g., by pyrolysis of CH₃SiCl₃, and Si₃N₄ by reaction of SiCl₄ with NH₃. This technique can also be used for pore filling in objects made of SiC and Si₃N₄ (gas phase impregnation) and for producing extremely fine SiC and Si₃N₄ (gas phase impregnation) and for producing extremely fine SiC and Si₃N₄ powder and SiC monofilaments suitable as components for SiC composites. Moreover, gas phase impregnation can also give fiber composites.     

A Novel Silicon Etching Method Using Vapor of Tetramethylammonium Hydroxide Solution

Silicon bulk etching is an important part of micro-electro-mechanical system (MEMS) technology. In this work, a novel etching method is proposed based on the vapor from tetramethylammonium hydroxide (TMAH) solution heated up to boiling point. The monocrystalline silicon wafer is positioned over the solution surface and can be anisotropically etched by the produced vapor. This etching method does not rely on the expensive vacuum equipment used in dry etching. Meanwhile, it presents several advantages like low roughness, high etching rate and high uniformity compared with the conventional wet etching methods. The etching rate and roughness can reach 2.13 μm/min and 1.02 nm, respectively. Furthermore, the diaphragm structure and Al-based pattern on the non-etched side of wafer can maintain intact without any damage during the back-cavity fabrication. Finally, an etching mechanism has been proposed to illustrate the observed experimental phenomenon. It is suggested that there is a water thin film on the etched surface during the solution evaporation. It is in this water layer that the ionization and etching reaction of TMAH proceed, facilitating the desorption of hydrogen bubble and the enhancement of molecular exchange rate. This new etching method is of great significance in the low-cost and high-quality micro-electro-mechanical system industrial fabrication.     

Dendritic Silver/Silicon Dioxide Nanocomposite Modified Electrodes for Electrochemical Sensing of Hydrogen Peroxide

A novel biosensor for hydrogen peroxide was prepared by immobilizing horseradish peroxidase (HPR) on newly synthesized dendritic silver/silicon dioxide nanocomposites, which were coated on a glassy carbon electrode. The modified electrode was characterized with XPS, SEM, and electrochemical methods. This biosensor showed a very fast amperometric response to hydrogen peroxide with a linear range from 0.7 to 120 μM, a limit of detection of 0.05 μM and a sensitivity of 1.02 mA mM^?1 cm^?2. The Michaelis‐Menten constant of the immobilized HRP was estimated to be 0.21 mM, indicating a high affinity of the HRP to H₂O₂ without loss of enzymatic activity. The preparation of the proposed biosensor was convenient, and it showed high sensitivity and good stability.