Giant flexoelectric effect in ferroelectric epitaxial thin films

We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.     

Anisotropic metal-insulator transition in epitaxial thin films

By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also experimentally observed, with the correlation gap being pinned in the middle of the conduction band. A self-organized 2D Anderson lattice is suggested as a new ground state.     

Phase transition properties of ferroelectric thin films with two surface layers

The phase diagrams of ferroelectric thin films with two surface layers described by the transverse Ising model have been studied under the mean-field approximation. We discuss the effects of the exchange interaction and transverse field parameters on the phase diagrams. The results indicate that the phase transition properties of the phase diagrams can be greatly modified by changing the transverse Ising model parameters. In addition, the crossover features of the parameters from the ferroelectric dominant phase diagram to the paraelectric dominant phase diagram are determined for ferroelectric thin films with two surface layers.     

Stability diagram for elastic domains in epitaxial ferroelectric thin films

The statics of isolated elastic domains (twins) in epitaxial thin tetragonal films grown on a cubic substrate is investigated theoretically. Different possible variants of the geometric shape of a domain are studied: plate, trapezoidal, and triangular. The nonuniform internal stresses, which also exist in polydomain epitaxial systems, are calculated by the effective-dislocation method. Hence the elastic energies stored in heterostructures with different domains are determined. The equilibrium width of a domain is calculated by minimizing the total internal energy of the heterostructure. Next, the stability diagram for isolated domains in epitaxial films is constructed from energy considerations. It is shown that in a large part of this diagram trapezoidal domains are energetically more advantageous than plate-shaped domains. The effect of an external electric field on the stability of 90° domains in epitaxial ferroelectric films is investigated. Fiz. Tverd. Tela (St. Petersburg) 39, 127–134 (January 1997)     

外延铁电薄膜相变温度的尺寸效应

考虑外延钙钛矿型铁电薄膜内的等效应力、表面晶格变化和表面电荷引起的退极化效应等机电耦合边界条件,利用铁电薄膜系统的动态金茨堡-朗道方程(DGL),系统分析和讨论了外延铁电薄膜相变温度与临界相变厚度的尺寸效应.结果表明,铁电薄膜相变温度与临界相变厚度完全依赖于各种与薄膜厚度相关的力电耦合边界条件.也给出了BaTiO₃外延铁电薄膜相变温度在各种边界条件下随厚度的变化,从结果看出,本文的分析与结论更符合实验数据. 关键词： 尺寸效应 外延铁电薄膜 相变温度 力电耦合边界     

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau–Ginsburg–Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO₃ thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.     

Phase transitions and domain structures in thin ferroelectric films

Recent advances in technology made available high quality thin ferroelectric films and ferroelectric–paraelectric multilayers. But understanding of the properties of these systems is far from being complete. In particular, it is not clear why various anomalies observed at phase transitions here are different from those in high quality bulk systems. The aim of the paper is to discuss some specific features of ferroelectric phase transitions in thin films and multilayers which are taken into account only partially by the theory. The discussion is limited to revealing the character of ferroelectric state forming just after the transition, i.e. if it is single-domain or multi-domain, if it is single-phase or two-phase. First, thin films with electrodes and on a substrate are discussed. The role of non-ideality of electrodes in realization of one of the first pairs of possibilities is emphasized. A more recent idea is that even for ideal electrodes a domain formation is possible when some conditions on the electrode–ferroelectric interface and the material constants of the material are met. This seems to be quite possible for the considered systems. Clamping by the substrate may lead to formation of a two-phase state which is practically unexplored for very thin films on substrates. Second, ferroelectric–paraelectric multilayers are considered which are more challenging for theoretical study than the thin films. Indeed, despite periodicity in the composition the domain structures are almost never periodic along the multilayer. The non-ideality of electrodes seems to lead to practical impossibility of single-domain ferroelectric phase transition in the multilayers of the considered type.     

Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films

The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr(0.2)Ti(0.8)O(3) thin films. Measurements of domain wall roughness reveal a power-law growth of the correlation function of relative displacements B(L) alpha L(2zeta) with zeta approximately 0.26 at short length scales L, followed by an apparent saturation at large L. In the same films, the dynamic exponent mu was found to be approximately 0.6 from independent measurements of domain wall creep. These results give an effective domain wall dimensionality of d = 2.5, in good agreement with theoretical calculations for a two-dimensional elastic interface in the presence of random-bond disorder and long-range dipolar interactions.     

Probing the ferroelectric phase transition in sol–gel‐derived polycrystalline bismuth ferrite thin films

Polycrystalline BiFeO₃ (BFO) thin films were successfully grown on Pt/Ti/SiO₂/Si(100) and SrTiO₃ (STO) (100) substrates using the chemical solution deposition (CSD) technique. X‐ray diffraction (XRD) patterns indicate the polycrystalline nature of the films with rhombohedrally distorted perovskite crystal structure. Differential thermal analysis (DTA) was performed on the sol–gel‐derived powder to countercheck the crystal structure, ferroelectric (FE) to paraelectric (PE) phase transition, and melting point of bismuth ferrite. We observed a significant exothermic peak at 840 °C in DTA graphs, which corresponds to an FE–PE phase transition. Raman spectroscopy studies were carried out on BFO thin films prepared on both the substrates over a wide range of temperature. The room‐temperature unpolarized Raman spectra of BFO thin films indicate the presence of 13 Raman active modes, of which five strong modes were in the low‐wavenumber region and eight weak Raman active modes above 250 cm⁻¹. We observed slight shifts in the lower wavenumbers towards lower values with increase in temperature. The temperature‐dependent Raman spectra indicate a complete disappearance of all Raman active modes at 840 °C corresponding to the FE–PE phase transitions. There is no evidence of soft mode phonons. Copyright © 2008 John Wiley & Sons, Ltd.     

Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films

The effects of internal stresses and depolarization fields on the properties of epitaxial ferroelectric perovskite thin films are discussed by employing the dynamic Ginzburg-Landau equation (DGLE). The numerical solution for BaTiO₃ film shows that internal stress and the depolarization field have the most effects on ferroelectric properties such as polarization, Curie temperature and susceptibility. With the increase of the thickness of the film, the polarization of epitaxial ferroelectric thin film is enhanced rapidly under high internal compressively stress. With the thickness exceeding the critical thickness for dislocation formation, the polarization increases slowly and even weakens due to relaxed internal stresses and a weak electrical boundary condition. This indicates that the effects of mechanical and electrical boundary conditions both diminish for ferroelectric thick films. Consequently, our thermodynamic method is a full scale model that can predict the properties of ferroelectric perovskite films in a wide range of film thickness.     

Polarization instability in polydomain ferroelectric epitaxial thin films and the formation of heterophase structures

A thermodynamic theory is developed for dense laminar domain structures in epitaxial ferroelectric films. It is found that, at some critical misfit strain between the film and substrate, the 90 degrees c/a/c/a domain structure becomes unstable with respect to the appearance of the polarization component parallel to domain walls, which results in the formation of a heterophase structure. For PbTiO3 and BaTiO3 films, the stability ranges of polydomain and heterophase states are determined. Dielectric anomalies accompanying misfit-strain-driven structural transformations are described.     

Phase transition behaviors of a ferroelectric thin film with long-range interactions

Within the framework of the mean-field approximation, the transverse-field Ising model is used to investigate the surface parameter modification of interaction constants and transverse fields on phase transition behaviors of a ferroelectric thin film with long-range interactions. The variation of Curie temperature as a function of the surface transverse field for different surface interaction constants or thickness is discussed. Meanwhile, the variation of Curie temperature as a function of the surface exchange interaction for different surface transverse fields is examined. In addition, the dependence of Curie temperature on the film thickness for different surface exchange interactions and surface transverse fields is obtained.     

Effect of misfit strain on the electrocaloric effect of polydomain epitaxial ferroelectric thin films

The effect of misfit strain on the electrocaloric effect in polydomain epitaxial BaTiO 3 thin films at room temperature is investigated using the Ginzburg-Landau-Devonshire thermodynamic theory. Numerical calculations indicate that the misfit strain has a large impact on the ferroelectric polarization states and the electrocaloric effect. Most importantly, the electrocaloric effect in the polydomain ca 1 /ca 2 /ca 1 /ca 2 phase is much larger than that in the monodomain c phase and the other polydomain phases. Consequently, a large electrocaloric effect can be obtained by carefully controlling the misfit strain, which may provide potential applications in refrigeration devices.     

Leakage currents in ferroelectric thin films

The main mechanisms of leakage currents in thin lead zirconate titanate (PZT) ferroelectric films prepared by the sol–gel method are discussed. Four specific regions are determined in I–V dependencies. At very weak fields (10–20 kV/cm), the current falls with the voltage increase as a result of depolarization. In the low fields region (about 70–100 kV/cm), the leakage current decreases with the decrease of voltage ramp speed and its components are the ohmic and displacement currents. In the high fields region (≥130 kV/cm), the leakage current increases with the decrease of step voltage ramp in contrast to the previous case. Possible conductivity mechanisms are the Poole– Frenkel emission and hopping conduction. In the transition region between above-mentioned ones (from 80–90 to ～130 kV/cm), an abrupt unstable increase of current is observed caused by breakdown of reverse bias Schottky barrier. Depolarization currents are studied for sol–gel PZT films prepared at different preparation conditions.     

Leakage currents in thin ferroelectric films

The basic mechanisms of leakage current components of thin lead zirconate titanate (PZT) ferroelectric films grown by the sol-gel method have been studied. Characteristic regions of current-voltage characteristics with different charge transport mechanisms have been determined. It has been shown that there is an intermediate region which separates such regions. In one of them, the leakage current depends on properties of the contact of electrodes with PZT film at low voltages; in the other, the leakage current is controlled by intrinsic properties of the PZT film bulk, and the basic mechanism of charge transport is Poole-Frenkel emission. In the intermediate region, a stepwise change in the current has been observed, which is caused by relaxing breakdown of the Schottky barrier. Time dependences of the leakage currents have been determined. It has been shown that the leakage current decreases with increasing delay time before the Schottky barrier breakdown, and the dependence becomes opposite in character after the breakdown.     

参数修改对铁电薄膜相变性质的影响

在关联有效场理论的框架内, 利用微分算子技术, 详细地计算了基于横场伊辛模型描述的对称铁电薄膜系统的相变性质. 根据薄膜各层自旋平均值构成的一系列耦合方程, 推导出可以用来计算任意层的具有不同表面层的薄膜相图的解析通式方程, 讨论了参数修改对薄膜相互作用参数从FPD (铁电相占主导地位的相图)到PPD (顺电相占主导地位的相图)过渡值和参数空间中各相变区域的影响. 在与平均场近似进行比较的结果显示, 关联有效场理论所得到的铁电薄膜的铁电性在某种程度上比平均场近似下的结果减弱. 关键词： 铁电薄膜 横场伊辛模型 相图 居里温度