Electron excitations in LiB3O5 crystals with defects: Low-temperature time-resolved luminescence VUV spectroscopy

The dynamics of electron excitations and luminescence of LiB₃O₅ (LBO) single crystals was studied using low-temperature luminescence vacuum ultraviolet spectroscopy with a subnanosecond time resolution under photoexcitation with synchrotron radiation. The kinetics of the photoluminescence (PL) decay, the time-resolved PL emission spectra, and the time-resolved PL excitation spectra of LBO were measured at 7 and 290 K, respectively. The PL emission bands peaking at 2.7 eV and 3.3 eV were attributed to the radiative transitions of electronic excitations connected with lattice defects of LBO. The intrinsic PL emission bands at 3.6 and 4.2 eV were associated with the radiative annihilation of two kinds of self-trapped electron excitations in LBO. The processes responsible for the formation of localized electron excitations in LBO were discussed and compared with those taking place in wide-gap oxides.     

Low-temperature time-resolved vacuum ultraviolet luminescent spectroscopy of KH2PO4 crystals with defects

Low-temperature photoluminescence (PL) of unactivated KDP crystals under selective synchrotron excitation is for the first time measured with subnanosecond time resolution. Time-resolved PL (2–6 eV) and PL excitation (4–35 eV) spectra, as well as PL kinetics, are measured at 7 K. From the acquired experimental data, luminescent bands related to intrinsic defects of the KDP lattice are identified; in particular, the long-wave band at 2.6 eV is assigned to L defects, and the band at 3.5–3.6 eV is attributed to D defects. An efficient energy transfer over the hydrogen sublattice is shown to take place in KDP at low temperatures. It results in the efficient excitation of L and D center photoluminescence in the fundamental absorption region, at electron transitions to the bottom levels of the conduction band, corresponding to the states of the hydrogen atom. The band gap E _g is evaluated to be 8.0–8.8 eV.     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Luminescence and electronic excitations in crystals K<Subscript>2</Subscript>Al<Subscript>2</Subscript>B<Subscript>2</Subscript>O<Subscript>7</Subscript> with defects

This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL) decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K; the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation and decay of electronic excitations in K₂Al₂B₂O₇ crystals have been discussed.     

Low-temperature time-resolved vacuum ultraviolet spectroscopy of self-trapped excitons in KH<Subscript>2</Subscript> PO<Subscript>4</Subscript> crystals

A complex investigation of the dynamics of electronic excitations in potassium dihydrophosphate (KDP) crystals is performed by low-temperature time-resolved vacuum ultraviolet optical luminescence spectroscopy with subnanosecond time resolution and with selective photoexcitation by synchrotron radiation. For KDP crystals, data on the kinetics of the photoluminescence (PL) decay, time-resolved PL spectra (2–6.2 eV), and time-resolved excitation PL spectra (4–24 eV) at 10 K were obtained for the first time. The intrinsic character of the PL of KDP in the vicinity of 5.2 eV, which is caused by the radiative annihilation of self-trapped excitons (STEs), is ascertained; σ and π bands in the luminescence spectra of the STEs, which are due to singlet and triplet radiative transitions, are resolved; and the shift of the σ band with respect to the π band in the spectra of the STEs is explained.     

Electronic excitations and luminescence in CsLiB6O10 crystals

The paper presents the results of a complex investigation into the dynamics of electronic excitations in the CsLiB₆O₁₀ crystal (CLBO) by low-temperature luminescence VUV spectroscopy with subnanosecond time resolution under photoexcitation by synchrotron radiation. Strong broad-band low-temperature photoluminescence (PL) of the CLBO crystal has been revealed. Data on the PL decay kinetics, time-resolved PL and PL excitation spectra, and reflectance spectra at 9.3 and 295 K are obtained. It is shown that the intrinsic PL of CsLiB₆O₁₀ in the 3.5-eV range is caused by radiative annihilation of self-trapped excitons. The channels of creation and decay of relaxed and unrelaxed excitons in cesium lithium borate are discussed. The band gap of CLBO is estimated as E _g≈8.5 eV. A monotonic increase in the excitation efficiency of intrinsic CLBO luminescence at exciting photon energies above 19 eV is identified as the photon multiplication process.     

Electronic excitations and luminescence of SrMgF4 single crystals

The electronic and crystal structures of SrMgF₄ single crystals grown by the Bridgman method have been investigated. The undoped SrMgF₄ single crystals have been studied using low-temperature (T = 10 K) time-resolved fluorescence optical and vacuum ultraviolet spectroscopy under selective excitation by synchrotron radiation (3.7–36.0 eV). Based on the measured reflectivity spectra and calculated spectra of the optical constants, the following parameters of the electronic structure have been determined for the first time: the minimum energy of interband transitions E _g = 12.55 eV, the position of the first exciton peak E _n = 1 = 11.37 eV, the position of the maximum of the “exciton” luminescence excitation band at 10.7 eV, and the position of the fundamental absorption edge at 10.3 eV. It has been found that photoluminescence excitation occurs predominantly in the region of the low-energy fundamental absorption edge of the crystal and that, at energies above E _g , the energy transfer from the matrix to luminescence centers is inefficient. The exciton migration is the main excitation channel of photoluminescence bands at 2.6–3.3 and 3.3–4.2 eV. The direct photoexcitation is characteristic of photoluminescence from defects at 1.8–2.6 and 4.2–5.5 eV.     

Self-trapped excitons in LiB3O5 and Li2B4O7 lithium borates: Time-resolved low-temperature luminescence VUV spectroscopy

Results are reported of a coordinated investigation of the dynamics of electronic excitations in LiB₃O₅ and Li₂B₄O₇ crystals by low-temperature luminescence VUV spectroscopy performed with subnano-second resolution under synchrotron photoexcitation. Data on the photoluminescence (PL) decay kinetics, time-resolved PL and PL excitation spectra, and reflectance spectra obtained at 295 and 9.6 K are reported for the first time; the PL of the borates in the 3.5-eV region caused by radiative annihilation of self-trapped excitons (STE) has been established to have an intrinsic nature; the σ and π STE luminescence bands originating from singlet and triplet radiative transitions have been isolated; the shift of the STE σ band relative to the π band has been interpreted; the LBO recombination luminescence band has been isolated; and the creation and decay channels of relaxed and unrelaxed excitons in lithium borates are discussed.     

Low-temperature time-resolved vacuum UV spectroscopy of NH<Subscript>4</Subscript>H<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystals

A complex investigation of the dynamics of electronic excitations in nonlinear optical crystals of ammonium dihydrophosphate NH₄H₂PO₄ was performed using low-temperature vacuum UV luminescence spectroscopy with time resolution upon selective photoexcitation by synchrotron radiation. Data on the photoluminescence decay kinetics, time-resolved photoluminescence spectra (2–6.2 eV), and time-resolved photoluminescence excitation spectra (4–24 eV) were obtained for the first time for NH₄H₂PO₄ crystals at 8 K. It is ascertained that the photoluminescence of NH₄H₂PO₄ crystals in the vicinity of 4.7 eV has intrinsic character due to the radiative annihilation of self-trapped excitons. Possible channels of generation and decay of relaxed and unrelaxed electronic excitations in NH₄H₂PO₄ crystals are discussed.     

A time-resolved luminescence spectroscopy study of non-linear optical crystals K2Al2B2O7

We report the results of complex study of luminescence and dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals obtained using low-temperature luminescence-optical vacuum ultraviolet spectroscopy with sub-nanosecond time resolution under selective photoexcitation with synchrotron radiation. The paper discusses the decay kinetics of photoluminescence (PL), the time-resolved PL emission spectra (1.2–6.2 eV), the time-resolved PL excitation spectra and the reflection spectra (3.7–21 eV) measured at 7 K. On the basis of the obtained results three absorption peaks at 4.7, 5.8 and 6.5 eV were detected and assigned to charge-transfer absorption from O^2? to Fe³⁺ ions; the intrinsic PL band at 3.28 eV was revealed and attributed to radiative annihilation of self-trapped excitons, the defect luminescence bands at 2.68 and 3.54 eV were separated; the strong PL band at 1.72 eV was revealed and attributed to a radiative transition in Fe³⁺ ion.     

Relaxation of electronic excitations in beryllium oxide: A time-resolved vacuum-UV spectroscopy study

Beryllium oxide crystals are studied by time-resolved optical and luminescence vacuum-UV spectroscopy. The low-temperature luminescence spectra and the luminescence decay kinetics (2.5–10 eV, 1–500 ns) upon selective photoexcitation, and also the luminescence excitation and reflectivity spectra (8–35 eV), are analyzed for BeO crystals with the optic axis aligned parallel and perpendicular to the electric vector of exciting polarized synchrotron radiation. It is found that the radiative relaxation of electronic excitations proceeds through a large number of channels. The excited states of self-trapped excitons are characterized by different multiplicity depending on the excitation energy and the sample orientation.     

Luminescence spectroscopy of Ln-doped Bi-containing phosphates and molybdates

The photoluminescence (PL) emission and excitation spectra of undoped and doped with rare-earth (RE = Eu, Tb) ions K₃Bi₅(PO₄)₆ and K₂Bi(PO₄)(MoO₄) crystals are studied in 3.7–14 eV region of the excitation photon energies at T = 8 and 300 K. The mechanisms of the host-related and RE-related luminescence in 3.7–7 eV region of the excitation photon energies are revealed in comparative analysis of the PL spectra of studied compounds. It is assumed that the excitation mechanisms of host luminescence of K₃Bi₅(PO₄)₆ and K₂Bi(PO₄) (MoO₄) crystals below 4.8 eV are related to Bi³⁺ ions in oxygen surrounding. An efficient energy transfer from the Bi³⁺-related luminescence centers to the emitting RE centers exists in crystals with low concentration of the RE dopants (1%). The PL excitation spectra of K₃Bi₅(PO₄)₆ crystals with high concentration of Eu dopants are formed by O – Eu CT transitions.     

Time-resolved luminescence spectroscopy of pure and doped with Ce3+ ions SrAlF5 crystals

The results of a study of time-resolved photoluminescence (PL) and energy transfer in both pure and doped with Ce³⁺ ions SrAlF₅ (SAF) single crystals are presented. The time-resolved and steady-state PL spectra in the energy range of 1.5–6.0 eV, the PL excitation spectra and the reflectivity in the energy range of 3.7–21 eV, as well as the PL decay kinetics were measured at 8.8 and 295 K. The lattice defects were revealed in the low temperature PL spectra (emission bands at 2.9 and 4.5 eV) in the undoped SAF crystals. The luminescence spectra of the doped Ce³⁺:SAF crystals demonstrate a new selective emission bands in the range of 3.7–4.5 eV with the exponential decay kinetics (τ ≈ 60 ns at X-ray excitation). These bands correspond to the d-f transitions in Ce³⁺ ions, which occupy nonequivalent sites in the crystal lattice.     

Luminescence spectroscopy and electronic structure of ZrP2O7 and KZr2(PO4)3 crystals

The photoluminescence (PL) of ZrP₂O₇ and KZr₂(PO₄)₃ phosphate crystalline micro-powders grown by spontaneous crystallization method is studied under vacuum ultra-violet (VUV) synchrotron radiation excitations (4–20 eV region of excitation photon energies) in 8–300 K temperature region. The electronic structures (partial densities of states) and optical absorbance spectra of the crystals are calculated by the Full-Potential Linear Augmented Plane Wave Method. Both phosphate crystals reveal PL emission band in the UV spectral region peaking near 300 and 295 nm for ZrP₂O₇ and KZr₂(PO₄)₃ respectively. The spectral profile of the band weakly depends on temperature. The excitation spectra of the UV emission in each crystal contain intensive excitation band peaking at 189 and 182 nm for ZrP₂O₇ and KZr₂(PO₄)₃ respectively. The excitation band of the UV emission is related to band-to-band electronic transitions with charge transfer from O 2p to Zr 4d states. The energy band gaps E_g of ZrP₂O₇ and KZr₂(PO₄)₃ are estimated as 6.7 and 6.6 eV respectively.     

Luminescence of LaBr3: Ce,Hf crystals under photon excitation in the ultraviolet,vacuum ultraviolet,and X-ray ranges

This study has been carried out using synchrotron radiation, time-resolved luminescence ultraviolet and vacuum ultraviolet spectroscopy, optical absorption spectroscopy, and thermal activation spectroscopy. It has been found that, in scintillation spectrometric crystals LaBr₃: Ce,Hf characterized by a low hygroscopicity, along with Ce³⁺ centers in regular lattice sites, there are Ce³⁺ centers located in the vicinity of the defects of the crystal structure. It has also been found that the studied crystals exhibit photoluminescence (PL) of new point defects responsible for a broad band at wavelengths of 500–600 nm in the PL spectra. The minimum energy of interband transitions in LaBr₃ is estimated as E _g ～ 6.2 eV. The effect of multiplication of electronic excitations has been observed in the range of PL excitation energies higher than 13 eV (more than 2E _g ). Thermal activation studies have revealed channels of electronic excitation energy transfer to Ce³⁺ impurity centers.     

Low-temperature photoluminescence in CuIn<Subscript>5</Subscript>S<Subscript>8</Subscript> single crystals

Photoluminescence (PL) spectra of CuIn₅S₈ single crystals grown by Bridgman method have been studied in the wavelength region of 720–1020 nm and in the temperature range of 10–34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5– 60.2 mW cm^?2 range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at 193 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal has been presented.     

Time-resolved luminescence of LaBr3-Ce scintillation crystals upon selective UV-VUV-XUV excitation

The time-resolved photoluminescence (PL) of LaBr₃-Ce scintillation spectrometric crystals produced in Russia is measured upon excitation using synchrotron radiation with photon energies of 3.7–21 and 45–290 eV at temperatures of 295 and 7.5 K. The PL spectra and decay curves are measured for excitation in the transparency range, at the edge of fundamental absorption, at the interband transitions, and in the range of inner-shell absorption. It is demonstrated that the PL yield is not proportional to the excitation energy, and that the PL decay curves are modified in the range of photoionization of the 3d (Br) and 4d (La) inner shells and, especially, in the range of giant resonance.     

Spectroscopy of defects in irradiated alpo 4 and GaPO 4 crystals

The time-resolved luminescence spectra in energy region of 2.0-6.0 v eV, as well as the excitation spectra (4-35 v eV), reflectivity and the decay kinetics were studied at T =10 v K and 295 v K using selective vacuum ultraviolet excitation in nominally pure crystals as well as crystals with intrinsic defects and radiation defects induced by fast electrons.     

Electronic transitions in α, θ and γ polymorphs of ultraporous monolithic alumina

Spectroscopy of α, θ, and γ phases of high‐purity ultraporous alumina has been studied at cryogenic temperatures of 7 K in the near‐IR–VUV range of spectra with synchrotron radiation excitation. The UV photoluminescence (PL) spectra are dominated by optical transitions of self‐trapped excitons, while the PL excitation spectra are assigned to free excitons and interband transitions. The analysis of PL excitation spectra indicates a tendency to fundamental bandgap narrowing in order of 9.36 eV (α) to 7.60 eV (θ) and 6.85 eV (γ). Structural defects related to oxygen vacancies are responsible for the visible F⁺/F transitions decrease in order γ > θ > α. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition

Photoluminescence (PL) properties of Eu-doped ZnO (ZnO:Eu) grown by a sputtering-assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements at 300 K, the samples annealed at 600 °C for 30 min showed clear red-emission lines due to the intra-4f shell transition of ⁵D₀→⁷F_J (J=0–4) in Eu³⁺. In photoluminescence excitation (PLE) spectra, the PL was observed under the high-energy excitation above the band-gap energy of ZnO (indirect excitation) and the low-energy excitation resonant to the energy levels of ⁷F₀–⁵D₃ and ⁷F₀–⁵D₂ transitions in Eu³⁺ (direct excitation). The PL lifetime under the indirect excitation was shorter than that under the direct excitations. These PL properties revealed that the energy transfer from ZnO host to Eu³⁺ was accompanied under indirect excitation.