Spin-polarized quasiparticle transport in ferromagnet/d-wave superconductor junctions

Within a scattering framework, a theoretical study is presented for the spin-polarized quasiparticle transport in ferromagnet/d-wave superconductor junctions. We find that the subgap conductance behavior is qualitatively different from a nonmagnetic junction, and can also be significantly different from those of a ferromagnet/s-wave junction. For a ballistic ferromagnet/d-wave superconductor junction, under appropriate conditions, a zero-bias conductance minimum could be achieved. In addition, a conductance maximum at finite bias could be evolved by interfacial scattering. For a normal-metal/ferromagnet/d-wave superconductor junction, conductance resonances are predicted.     

Spin-polarized transport in zigzag graphene nanoribbons adsorbing nonmagnetic atomic chain

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (P) configuration can be much bigger than that at the antiparallel (AP) configuration. Compared P with AP configuration, there exists a shift of phase which can be tuned by gate voltage. We find that the exchange field weakly affects the conductance of carriers for P configuration but can dramatically suppress the conductance of carriers for AP configuration. This controllable electron transport implies anomalous magnetoresistance in this topological spin valve, which may contribute to the development of spintronics. In addition, there shows an existence of Fabry-Perot-like electron interference in our model based on the topological insulator, which does not appear in the same model based on the two dimensional electron gas.     

铁磁半导体/d波超导结的自旋极化输运

考虑到铁磁半导体和d波超导体中空穴的有效质量和费米速度错配,运用推广了的B londer-Tinkham-K lapw ijk(BTK)理论模型,研究了铁磁半导体/d波超导隧道结的电导谱。研究表明:(1)铁磁半导体和d波超导体中空穴的有效质量和费米速度错配对系统的微分电导影响显著;(2)铁磁半导体的磁交换能对Andreev反射有抑制作用。     

Disorder-induced enhancement of transport through graphene p-n junctions

We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using the Landauer-Büttiker formalism combined with the nonequilibrium Green function method, the conductance is studied for clean and disordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits a plateau structure at a suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes cannot be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with a recent experiment.     

Doped semiconductors in an inhomogeneous magnetic field

We show that a potential difference is generated across a semiconductor sample containing free carriers when the sample is in a magnetic field gradient in the direction of the field. A measurement of the potential difference can give direct information concerning the effective mass and effective g-factor of the free carriers.     

Homogeneous and inhomogeneous magnetic oxide semiconductors

Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.     

Spin-polarized electron tunneling in bcc FeCo/MgO/FeCo(001) magnetic tunnel junctions

In combining spin- and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe(1-x)Co(x)(001)/MgO/Fe(1-x)Co(x)(001) magnetic tunnel junctions. Contrary to previous theoretical predictions, we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic% as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Δ(1) symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe(1-x)Co(x)(001) free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system.     

Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.     

Ferromagnetic clusters induced by a nonmagnetic random disorder in diluted magnetic semiconductors

In this work, we analyze the nonmagnetic random disorder leading to a formation of ferromagnetic clusters in diluted magnetic semiconductors. The nonmagnetic random disorder arises from randomness in the host lattice. Including the disorder to the Kondo lattice model with random distribution of magnetic dopants, the ferromagnetic–paramagnetic transition in the system is investigated in the framework of dynamical mean-field theory. At a certain low temperature one finds a fraction of ferromagnetic sites transiting to the paramagnetic state. Enlarging the nonmagnetic random disorder strength, the paramagnetic regimes expand resulting in the formation of the ferromagnetic clusters.     

Spin-polarized conductance in graphene-based FSF junctions

In this paper, conductance of spin and electron in graphene-based ferromagnet—superconductor (FS) and parallel and antiparallel ferromagnet–superconductor–ferromagnet (FSF) junctions are studied. Using the Dirac–Bogoliubov–de Gennes equations, Andreev and normal reflections are obtained and then using these coefficients, conductance of spin and electrons are calculated at the FS interface(s) analytically. As a result, both the energy dependence of spin and charge differential conductances are investigated and a comparison between electron and spin transport is done in this paper. Effect of exchange energy of ferromagnet h on conductances is studied too.     

Effects of nonmagnetic and magnetic impurities in the normal metal layer ofSNS junctions

The pair penetration depth into normal metal films containing various amounts of nonmagnetic or magnetic impurities is determined from the dependence of the critical current density on the normal metal film thickness in superconductor-normal metalsuperconductor junctions.     

非磁性半导体异常磁电阻效应的有效介质理论

有效介质理论自洽方程被用来研究非磁性半导体材料的异常磁电阻效应. 通过建立两组分无序电导网络,同时引入组分的霍尔效应,计算了体系的有效电导张量随磁场和组分浓度的变化关系.结果表明,当两种组分具有不同类型的载流子时,体系中各组分零场电阻的差异将导致在垂直磁场和平行磁场方向上产生异常的磁电阻效应.这些宏观的磁电阻效应来源于体系中的非均匀性,并与组分的几何逾渗结构具有明显的关联. 关键词： 异常磁电阻效应 非磁性半导体 有效介质近似     

Spin-polarized tunneling in ferromagnetic double barrier junctions

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers. Received 9 June 2001 and Received in final form 20 August 2001     

The application of the theory of similarity to electron processes in p-n junctions

The authors consider in detail the methodology of applying the methods of similarity theory to electron processes in p-n junctions. They give the main similarity criteria and formulate the similarity conditions for the electron processes in semiconductor devices. They also cite examples of processing the experimental data in the criterial form.The authors thank Prof. V. A. Venikov and Candidate of Technical Sciences A. D. Shinkov for helpful discussions and valuable comments.     

Microscopic theory of dispersive transport in disordered semiconductors

A theory of dispersive transport based on the microscopic master equation is presented. The theory agrees with previous approaches and unifies them but is much more general. By means of the two-site effective medium approximation of Movaghar et al. we derive a generalised master equation for the averaged propagator of the carriers the kernel of which can be calculated directly from the microscopic transfer rates and distribution functions. We give analytic expressions for the transient current i(t) including the conditions for the transition from dispersive to Gaussian transport for three relevant hopping models. The influence of multiple trapping is treated by means of the coherent potential approximation. We find the same results for trapping with an exponentiak trap depth distribution and fixed-range hopping over energy barriers with an exponential barrier height distribution.     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

Piezotunnel current in GaAs p-n junctions

A calculation is made of the sensitivity to shear deformations of the tunnel current in tunnel p-n junctions of gallium arsenide. The approximation of high hole energies (¦E-E_v¦) was used in the calculation, where is the energy splitting of the branches of light and heavy holes at the center of the Brillouin zone produced by the action of shear deformations. The effect of hydrostatic and uniaxial pressure on the tunnel current with the p-n junction oriented parallel to the (100) and (111) crystallographic planes was studied experimentally. Satisfactory agreement was obtained between the calculated and experimental values of the coefficients of the piezotunnel current.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 134–139, March, 1977.In conclusion, the authors express their gratitude to S. S. Shchegol' for help in fabricating the expitaxial p-n junctions and to G. F. Karavaev for a discussion of the work.     

Electroluminescence at p-n junctions in ZnSe

Electroluminescent radiation at p-n junctions and the photovoltaic effect in ZnSe monocrystals were investigated. The p-n junctions were prepared by melting dots of indium on p-type ZnSe (ZnSe contained Cu impurities).The measurements were made at room temperature and at –150°C. The acceptor level depths estimated from a maximum emission are in accordance with the data in the literature.The decay time of electroluminescence measured at –150°C is 2·1×10^–6 sec. In sunlight a photovoltage of about 1·1 V was observed.I wish to thank Prof. Dr A. Jablonski for his interest in this problem.     

Itinerant electron transport in microscopically inhomogeneous magnetic fields

We report on magnetoresistance measurements in thin nickel films modulated by a periodic magnetic field emanating from micromagnetic arrays fabricated at the film surface. By increasing the strength of the magnetic potential using nickel and dysprosium micromagnets, we are able to quench the anisotropic magnetoresistance (AMR) in the film.