巧用指针式多用电表的欧姆挡测电容

用欧姆表测量大容量电容器时,可通过监测指针的偏转情况了解电容的充电情况,从而测量电容器的电容.     

一种新型的电容式角度位移测量仪

本文设计了一种新型的可以测量角度以及位移的变极板正对面积式的差动电容测量仪。其中电容部分是由四块内极板以及一块外极板按照一定的方式安装形成的。当测量仪进行角度位移测量时，待测物体带动外极板旋转平移，外极板与四块内极板所形成电容的电容值发生变化；之后利用差动电容测量电路对这一变化进行测量，进而得出测量电路输出与电容值变化的关系，从而得到角度和位移的变化量，实现角度和位移的测量。     

关于用电的方法测量声级计有关性能时所用耦合电容的讨论

本文从实验和理论两方面分析了用电的方法测量声级计的性能时耦合电容的影响，并根据实验结果得出，完全可以用生产厂提供的配接器进行有关的测量．     

利用电荷-电压李萨如图形法测量介质阻挡放电参量

采用电荷-电压李萨如图形法，设计了大气压介质阻挡放电参量测量实验装置.利用Matlab GUI编写了计算软件，可实现实验数据的快速处理.利用该装置测量了电源频率为4.5～9.0 kHz时介质等效电容、气隙等效电容和放电功率等参量，测量结果表明：电源频率为5.75 kHz时，介质等效电容最高；电源频率为5.5 kHz时，气隙等效电容最低；电源频率为5.0 kHz时，放电功率最高.     

用示波器测量电解电容器的动态电容值

电解电容器工作时一般都是在极板间加有一定直流电压u的基础上还叠加较小的交流电压u，在此条件下测得的交流电容即为该电容的动态电容测量值．电解电容器的动态测量值可由示波器测出。     

示波谐振法测电容的研究

示波谐振法测量电容就是用示波器观察RLC串联电路的谐振现象来确定待测电容的值,是测量电容的一种简便方法.理论和实验研究表明,测量灵敏度对测量结果影响较大,电路中标准电感L和标准电阻R的取值对电路灵敏度有较大影响,而电路灵敏度引入的测量不确定度,对测量结果总不确定度影响较大.当L和R的取值使Q≥3时,电路灵敏度已足够高,一般已满足测量的要求.     

用模拟万用表测电容

介绍了用模拟万用表和秒表测量电容的简单方法，对测量结果的误差原因进行了分析，给出了提高测量精度的几点措施。     

电容率测量仪的改进

针对现有的电容率测量实验教学装置中存在的精度较低等问题,重新设计了电容率实验装置.将平行板电容的上极板设计为T型结构,用一限位螺母的转动来带动上极板上下移动,且不发生转动,用千分表实时测出上极板移动的距离.使用改进后的实验装置测量空气的电容率,测量结果与空气的标准电容率ε相比,误差在1%以内.实验结果表明改进后的电容率实验装置性能可靠,实验测量精度较高.     

用单片机制作电容测量仪

介绍用单片机测量电容的方法，用数学导出软件校准结果，同时对测量误差进行分析，给出应用实例，最后讨论了扩展量程的方法。     

测量强流电子加速器输出电压的电容分压器

研制了一种结构简单、拆装方便的自积分电容分压器,用于测量强流电子加速器二极管输出电压。介绍了电容分压器的结构,计算了其电容量,并通过仿真的方法分析了前端电阻及其杂散参数对测量波形的影响,结果表明:当前端电阻杂散电容较大时,测量波形出现过冲现象;而前端电阻对地电容较大时,会影响测量波形的前沿。将电容分压器用于测量强流电子加速器二极管输出电压,并运用水电阻分压器对其进行了标定,所测得波形与电阻分压器基本一致,分压比为563 007,可以用于测量半高宽为100 ns的高压脉冲。     

ADP晶体压电性能的动态测量

本文在比较了前人测量ADP晶体压电性能的若干重要方法之后,根据ADP晶体的特点,指出采用动态电容方法并增大串接电容C_T和修正静电电容C₀,这样虽然使用较差的设备,仍得到了较好的结果。     

Inductance–capacitance resonance effect in the magnetoelectric composites characterization system

This paper presents the inductance–capacitance (LC) resonance effect in the magnetoelectric (ME) composites characterization system. The measured magnetoelectric voltage coefficient is significantly affected by the LC resonance at the electromechanical resonant frequency, but not at 1 kHz, typically reported in the literature. Decreasing the measuring circuit inductance and/or capacitance helps to reduce the LC resonance effect. While it is impossible to completely eliminate the coil inductance and capacitance, they should be accounted for by proper circuit balancing. One can accurately calculate the sample intrinsic ME voltage coefficient knowing L and C of the measuring circuit. This study is helpful for designing and building the ME characterization systems.     

纵向极化与磁化叠层复合材料磁电效应理论及计算

基于纵向极化压电材料及纵向磁化磁致伸缩材料的压电和压磁方程与磁电元件运动方程,给出磁电元件开路电压表达式;鉴于压电材料高输出阻抗的特点,考虑测试仪器的有限输入阻抗和传输信号引线电缆电容,通过建立等效电路模型推出了非开路情况下磁电电压计算式,取不同材料参数对磁电电压进行了数值计算.研究表明,材料参数、电路参数对输出电压均产生影响.对磁伸材料两端面受非均匀偏置磁场产生外力的非自由边界磁电效应进行研究发现,恒外力作用使压电元件产生不可检测的稳恒电压. 关键词： 纵向极化 磁电效应 磁电元件 层叠材料     

Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies

Influence of interface traps at Al₂O₃/(GaN)/AlGaN interface on low and high frequency capacitance of Al₂O₃/(GaN)/AlGaN/GaN heterostructure capacitor was studied. New features were observed in the capacitance curves. Obtained experimental results were modeled and simulated and accordance with the experiment has been obtained. For lower frequencies a new capacitance peak in the depletion and increase of the capacitance in a plateau region were measured. The capacitance peak in the depletion region was successfully explained by a capacitance response of the interface traps with U-shape density distribution. On the other hand the increase of the capacitance plateau was modeled by the homogeneous interface trap distribution. We assume that the traps located near the band edges having the highest density are able to respond to the low frequency measuring.     

脉冲宽度法测电容及恒流源的选取

阐述了脉冲宽度法测电容的原理，给出了用运算放大器构成精密恒流源的2种电路，简要介绍了Uref的确定方法．     

用电容充电法测量普朗克常量

提出一种利用光电管产生的光电流给电容充电来准确测量光电管截止电压的方法,从而得到普朗克常量.实验中采用了6种颜色的LED器件做光源直接照射光电管上,并通过具有高输入阻抗的数据采集卡实时测量电容两端的电压.实验测得的普朗克常量值与公认值的误差小于3％.     

Accurate capacitance-voltage characterization of organic thin films with current injection

To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage (C-V) characterization of organic thin films when current injection is significant, a three-element equivalent circuit model is proposed. On this basis, the expression of real capacitance in consideration of current injection is theoretically derived by small-signal analysis method. The validity of the proposed equivalent circuit and theoretical expression are verified by a simulating circuit consisting of a capacitor, a diode, and a resistor. Moreover, the accurate C-V characteristic of an organic thin film device is obtained via theoretical correction of the experimental measuring result, and the real capacitance is 35.7% higher than the directly measured capacitance at 5-V bias in the parallel mode. This work strongly demonstrates the necessity to consider current injection in C-V measurement and provides a strategy for accurate C-V characterization experimentally.     

Observation of quantum capacitance in the Cooper-pair transistor

We have fabricated a Cooper-pair transistor (CPT) with parameters such that for appropriate voltage biases, it behaves essentially like a single Cooper-pair box (SCB). The effective capacitance of a SCB can be defined as the derivative of the induced charge with respect to gate voltage and has two parts, the geometric capacitance, C(geom), and the quantum capacitance C(Q). The latter is due to the level anticrossing caused by the Josephson coupling and is dual to the Josephson inductance. It depends parametrically on the gate voltage and its magnitude may be substantially larger than C(geom). We have detected C(Q) in our CPT, by measuring the in phase and quadrature rf signal reflected from a resonant circuit in which the CPT is embedded. C(Q) can be used as the basis of a charge qubit readout by placing a Cooper-pair box in such a resonant circuit.