Laser gain by electron collisional pumping of Ar VII–V XII

Gain coefficients have been calculated for transitions of singlet levels ns–np of orbital n=4 and n=5 in magnesium-like ions with atomic numbers Z=18, 19, 20, 21, 22 and 23. Population inversions for 4p and 5p levels in these ions were also calculated, via electron collisional excitation, for electron temperature range of 93–231 eV and electron density range of 10¹⁶–10¹⁷ cm⁻³. Under these plasma conditions, the maximum gain that occurred for 4s–4p transition was at electron temperature of 231 eV and electron density of 4×10¹⁷ cm⁻³. Scaling of the maximum gain coefficients with atomic number Z and the plasma parameters is also presented.     

Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide

The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n₀ increases (from 1.3 cm^–1 in GaAs with n₀ — 10¹⁷ cm^–3 to 0.7 cm^–1 in GaAs with n₀ 10¹⁸ cm^–3). The rate of removal of charge carriers () increases as n₀ increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with N_In 10¹⁸ cm^–3 decreases .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.     

Recombination channels of molecular ions He 2 + and electrons

The dependence of the intensities of atomic lines and molecular bands emitted in the afterglow of a helium discharge on the electron temperature is used to identify the processes in which states of He and He ₂ ^* are populated. It is established that the formation of He^* atoms (n = 3, 4) in decaying helium plasma occurs principally on account of the associative recombination of vibrationally excited He ₂ ⁺ ions and electrons. Analysis of the experimental reuslts leads to the conclusion that the distribution of the molecular ions He ₂ ⁺ over vibrational states is strongly nonequilibrium.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 67–72, February, 1984.It remains to thank N. P. Penkin for discussions and for his interest in the work.     

Determination of the Concentration of Electrons in the Laser Plasma of Helium

The dependence of the Stark width of the spectral line of He II P 468.6 nm on the electron concentration in the laser plasma of helium for the range of electron densities N _e = (1–10)·10²³ m^–3 and electron temperatures of the order of 60 kK has been measured. The results obtained correspond well to Griem's theoretical data. An empirical relation is suggested which makes it possible to reliably determine the electron concentration from measured halfwidths in the investigated range of N _e.     

Spectroscopic studies of a helium plasma generated near ceramic surface at pressures below 1000 hPa

Spatially resolved line intensity measurements from a plasma generated near ceramic surfaces have been performed. Disk-shaped helium plasmas of diameter 20 mm and thickness 0.9 mm have been studied in a pressure range of 2×10³–10⁵ Pa. On the basis of line intensity measurements and applying an appropriate collisional-radiative model for a helium plasma, the distributions of electron density and electron temperature have been evaluated.     

Supersymmetric Casimir effect in flat homogeneous Clifford-Klein space-time

The Casimir effect in supersymmetric quantum field theories can occur in spacetime with nontrivial topologies, due to the existence of topologically nonequivalent field configurations. This possibility is considered for the example of the supersymmetric Wess-Zumino model and the N=1 supersymmetric Yang-Mills theory in flat homogeneous Clifford-Klein space-time with the topologies M_n= (S¹)ⁿ×R^4–n, n=1, 2, 3. The occurrence of the Casimir effect in this situation is interesting from the point of view of constructing sensible cosmological scenarios of the early stages of the evolution of the Universe, in particular, the expanding Universe scenario.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 101–106, April, 1987.     

Effect of vibrational kinetics of He2 + ions on the afterglow of a discharge in helium

A decaying weakly ionized helium plasma [n_e=(0.2–1.1)·10¹¹ cm^–3, p=(40–70) mm Hg] was studied experimentally. It is shown that the experimental time dependences of the intensities of atomic lines and molecular bands in the afterglow phase can be explained if the vibrational kinetics of He₂ ⁺ ions is included in the analysis. Analysis of the measurements shows that for n_e 10¹¹ cm^–3 and N_a 10¹⁸ cm^–3 deexcitation of He₂ ⁺ ions occurs primarily as a result of inelastic collisions with helium atoms. Based on the experimental data, an approximate value was obtained for the rate constants of the vibrational relaxation of molecular helium ions 10^–16 cm³/sec. These results are used for making a qualitative analysis of the distribution of He₂ ⁺ ions over the vibrational states in the discharge phase.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 88–96, November, 1986.     

Electron impact ionization of atomic clusters in ultraintense laser fields

In this paper we report on inner ionization of Xe_n clusters (n = 55- 2171) in ultraintense Gaussian laser fields (peak intensity I = 10¹⁵- 10²⁰ Wcm^-2, pulse width τ= 25 fs, frequency 0.35 fs^-1). The cluster inner ionization process is induced by the barrier suppression ionization (BSI) mechanism and by electron impact ionization (EII), which occurs sequentially with the BSI. We address electron impact ionization of clusters, which pertains to inelastic reactive processes of the high-energy (100 eV–1 keV per electron) nanoplasma. We utilized experimental data for the energy dependence of the electron impact ionization cross-sections of Xe^j+ (j = 1-10) ions, which were fit by an empirical three-parameter Lotz-type equation, to explore EII in clusters by molecular dynamics simulations. Information was obtained on the yields and time-resolved dynamics of the EII levels (i.e., number n_imp of electrons per cluster atom) in the Xe_n clusters and their dependence on the laser intensity and cluster size. The relative long-time (t = 90 fs) yields for EII, n_imp/n_ii (where n_ii is the total inner ionization yield) are rather low and increase with decreasing the laser intensity. In the intensity range I = 10¹⁵-10¹⁶ Wcm^-2, n_imp/n_ii = 0.21 for n = 2171 and n_imp/n_ii = 0.09-0.14 for n = 459, while for I = 10¹⁸-10²⁰ Wcm^-2, n_imp/n_ii = 0.01-0.05. The difference Δn_imp between the EII yield at long time and at the termination of the laser pulse reflects on ionization dynamics by the nanoplasma when the laser pulse is switched off. For Xe₂₁₇₁ in the lower intensity domain, Δ n_imp = 0.9 at I = 10¹⁵ Wcm^-2 and Δn_imp = 0.4 at 10¹⁶ Wcm^-2, reflecting on EII by the persistent nanoplasma under “laser free” conditions, while in the higher intensity domain of I = 10¹⁷ - 10¹⁸ Wcm^-2, Δn_imp is negligibly small due to the depletion of the transient nanoplasma.     

Effect of electron irradiation on the properties of germanium-doped gallium arsenide

The Hall effect, electrical conductivity (77–370 K), and photoluminescence spectra (77 K) are studied in single-crystals of nuclearly doped GaAs (NDG) and GaAs doped with Ge by the metallurgical method after irradiation by electrons (E= 1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2). Initial electron concentrations were n= 1.7·10¹⁷ cm^–3 and n₀=2.6·10¹⁷ cm^–3 respectively. In the GaAs doped during crystal growth by the Czochralski method the degree of compensation related to the amphoteric impurity Ge is higher (K=0.8) than in the NDG (K=0.4) for identical initial electron concentration. It was established that the rate of charge carrier removal in GaAs is lower than in NDG, while radiation defects are more thermostable in NDG. The energy spectrum of radiation defects and radiating recombination centers, and the basic steps in reestablishment of electrophysical and optical properties in GaAs and NDG are similar, i.e., they do not depend on the method of germanium doping.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 82–86, April, 1991.     

Transition wavelengths for helium atom in weakly coupled hot plasmas

We have investigated the effect of surrounding plasmas on several singly excited and doubly excited meta-stable bound states of helium atom using highly correlated basis functions for singly excited S, P, D states and CI-type basis functions for doubly excited meta-stable D states. Plasma effect is taken care of by using a screened Coulomb (Yukawa) potential obtained from the Debye model that admits a variety of plasma conditions, and such a model plays an important role in plasma spectroscopy. The wavelengths for transitions from the 1snp ¹P° (n=2,3)→1s²¹S^e, 1snp ³P° (n=2,3)→1s2s ³S^e, 2pnp ¹P^e (n=3,4)→1s2p ¹P°, 2pnp ³P^e (n=2,3)→1s2p ³P°, 2pnd ¹D° (n=3,4)→1s3d ¹D^e, 2pnd ³D° (n=3,4)→1s3d ³D^e, 2p3p ¹P^e→2pnd ¹D° (n=3,4), 2pnd ¹D°(n=3, 4)→2p4p ¹P^e, 2pnp ³P^e (n=2,3)→2p3d ³D°, and 2pnp ³P^e (n=2,3)→2p4d ³D° of helium atom in plasmas for various Debye lengths are reported.     

An investigation of the energy exchange mechanisms involving the 23S metastable level in an RF helium plasma

The energy exchange mechanisms present in a pure helium and a helium-neon plasma were investigated using spectroscopic diagnostic techniques. The plasma was spatially resolved and only the volume element at the plasma centerline was considered in the energy- exchange analysis. The experiment was conducted with a constant total pressure of 0·7 torr, a fixed oscillator frequency of 4 MHz, and a constant input power of 1·8 kW. Emission line spectroscopy was used to determine the population densities of 16 levels in the n³S, n³P, and n³D series. Spatially resolved, self-absorption measurements of the 2³P-2³S transition were used to determine the 2³S metastable level number density. The electron number density of 3·3 × 10¹³ cm^-3 was determined from the spatially resolved H_β blue wing profile, and a lower bound excitation temperature of 8800 °K was determined from a Boltzmann plot of the spatially resolved lower bound levels of the excited helium. The addition of 10% and 20% by volume of neon gas caused a measurable decrease in the population densities of the lower bound levels of helium, while the electron number density and lower bound excitation temperature remained unchanged. Three energy exchange models (local thermal equilibrium, corona, and collisional- radiative) were examined, and the collisional-radiative model was found to best describe the excitation processes for the 2³S level. This model was also appropriate for describing the helium-neon plasma at this level.     

Thermoelectric properties of Ag2Se

To obtain information on the temperature and concentration dependence of thermoelectric quality factor Z and to clarify the nature of scattering in Ag₂Se a study was made of electrical conductivity , thermo-emf , and thermal conductivity in silver selenide over the temperature range T=80–450°K at concentration levels of 2–43·10²⁴ m^–3. It is shown that in Ag₂Se the Lorentz number L, determined experimentally from the electronic fraction of the thermal conductivity, is less than the Sommerfeld number L_o. Calculation of L/L_o(n) performed with a theory considering inelastic scattering of carriers, shows that the inelasticity is produced by electron interaction. Comparison of experimental data on the temperature dependence of lattice thermal conductivity with theory permits the conclusion that in Ag₂Se in range 80–300°K the basic role in phonon scattering is played by three-phonon Umklapp processes. It is shown that with increase in T and decrease in n the thermoelectric quality factor of silver selenide increases. The highest value of Z was achieved in a specimen with electron concentration n=2·10²⁴ m^–3 at T=320°K. The rapid decrease in Z upon phase transition is related to discontinuous decrease in and at this point.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 27–31, October, 1981.     

Dislocation structure of kcl crystals grown with vibration of the melt

Summary The amplitude at all frequencies was 0.04 mm. Three crystals were grown at each frequency, with seeds of dislocation density D = 6 × 10⁴ cm^–2. Figure 1 shows the frequency dependence of the final D. Each point in Figs. 1 and 2 is the mean from 50 measurements (50 fields of view). At all frequencies except 180 Hz, D was 2–4 times less than that without vibration, while at 100 and 160 Hz it was less by nearly an order of magnitude.The effects of amplitude (0.02 to 0.2 mm) were examined at 100 Hz, the minimum D occurring at 0.1 mm (Fig. 2). At 0.04–0.08 mm, D was less by a factor 3–4 than for crystals grown without vibration, while at 0.1 mm it was less by an order of magnitude, being 2 × 10^–4 cm^–2. The size of the etch pits on crystals grown at amplitudes up to 0.1 mm did not differ from that for crystals grown at rest, but above 0.1 mm the size increased, by more than a factor 3 at 0.2 mm. Figure 3 illustrates these effects.Optimal vibration reduces D by improving the growth conditions (reduction of temperature gradients by mixing, more uniform impurity distribution).     

Characteristics of a reflex discharge in hydrogen in a magnetic field

The properties of an extensive reflex discharge of large power with one heated and one cold cathode in a magnetic field of 10 to 1500 Gauss were measured. At a neutral hydrogen pressure of 10^–4 to 10^–3 torr a plasma column was obtained which was 100 cm long, 10 cm in diameter and had a density greater than 10^–11 cm^–3. The dependence of the radial profile of the potential in the plasma was measured by a heated probe, and the temperature and electron density by Langmuir probes calibrated by a microwave interferometer.The dependence of the origin of low-frequency rotational instability on the parameters of the discharge was studied and the measured critical magnetic field was compared with theory. Apart from this low-frequency instability, intensive oscillations were also found in the discharge current in a frequency band up to 30 MHz, and the dependence of their spectrum on the magnetic field was measured.     

Trapping of random walks on the line

Several features of the trapping of random walks on a one-dimensional lattice are analyzed. The results of this investigation are as follows: (1) The correction term to the known asymptotic form for the survival probability ton steps is O(( ₂n)^–1/3), where =–ln(1–c), andc is the trap concentration. (2) The short time form for the survival probability is found to be exp[–a(c)n ^1/2], wherea(c) is given in Eq. (21). (3) The mean-square displacement of a surviving random walker is found to go liken ^2/3for largen. (4) When the distribution of trap-free regions is changed so that very large regions are much rarer than for ideally random trap placement the asymptotic survival probability changes its dependence onn. One such model is studied.     

Cadmium ion excitation in an expanding He-Cd plasma

Space-time characteristics of radiation, temperature, and electron concentration are studied for segmented excitation and subsequent recombination in an expanding He-Cd plasma. It is shown that recombination processes play the dominant role in excitation of levels. The collision of metastable helium and cadmium atoms is significant in populating the cadmium ion 4²F_{5/2, 7/2} levels.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 35–39, July, 1986.     

Far infrared surface electromagnetic waves propagation on A3B5 semiconductors

The real and imaginary parts of surface electromagnetic waves (SEW) refraction index n_ef in n-type InSb, GaAs and InP have been measured in FIR region (=85–142 cm^–1). The n_ef measurements allowed to determine plasma frequency _p and plasmon damping . The obtained nonlinear SEW propagation distance L dependence on Te impurity concentration in GaAs (N=10¹⁷–10¹⁹ cm^–3) was explained taking into account the conduction band nonparabolity as well as the presence of isostructural phase transition at N=2×10¹⁰ cm^–3.     

Approach to a theory for the masses of the electron,muon, and heavier charged leptons

The electron mass valuem=9.093 × 10^–28 g is shown to be obtainable from the QED self-energy formula amended to include gravitational selfenergy and restricted by the space-time equipartition lawm/n ₀=4/3. Held together by gravity, the electron has a radiusr _e =8Gm/9e ² c=2.588 × 10^–53 cm. An extension of the analysis yields the theoretical muon-electron mass ratio of 206.241 and predicts heavier charged leptons with mass values of 1.915 GeV, 15.67 GeV, and above.     

Oscillator strengths and polarizabilities of the hot-dense plasma-embedded helium atom

The effect of weakly coupled hot plasma environment on the oscillator strengths of the ultraviolet and visible series and the polarizabilities of helium has been investigated using variational highly correlated wave functions within the non-relativistic framework. The Debye shielding approach that admits a variety of plasma conditions is used to simulate the plasma effects. For each shielding parameter, dipole oscillator strengths are calculated for the 1 ¹S-n¹P (n=2, 3), 2 ¹S-2 ¹P, 2 ³S-n³P (n=2, 3) and 2 ^1,3P-n^1,3D (n=3, 4) transitions. The dipole and quadrupole polarizabilities for the ground He (1s²¹S) state are also reported for each screening parameter. Results obtained are useful in plasma diagnostic purposes besides several other applications.     

Role of atomic inelastic collisions in a Cs-He steady state discharge

The population of various excited states and the electron temperature in a mixture of cesium vapor and helium have been measured spectroscopically in a stationary electrical discharge where helium atoms remain in their ground state. An equilibrium between the populations of highly excited cesium levels was observed to be characterized by a Boltzmann temperature equal to the gas temperature. It is concluded that the populations of these high levels are more influenced by Cs¹+He inelastic collisions than by Cs¹+e collisions when [He]/[e]?10⁶. The influence of the helium atoms has also been observed on the relation between electron temperature and electron density.