Anomalous influence of an external magnetic field on spin fluctuations in magnetic semiconductors with strong p-d hybridization and the colossal magnetoresistance effect

The colossal magnetoresistance effect in magnetic semiconductors based on lanthanum manganites has been investigated in terms of the model allowing for the effects of p-d hybridization and electronelectron Coulomb correlations. The influence of an external magnetic field on spin fluctuations has been considered under the conditions where the chemical potential is in a narrow heavy-fermion band formed in the hybridization gap. It has been shown that, in the vicinity of the Curie point T _C, the strong spin anharmonicity leads to an anomalously strong suppression of spin fluctuations by the external magnetic field, a phenomenon contributing significantly to the formation of colossal negative magnetoresistance.     

Nature of the low-temperature colossal magnetoresistance of La0.35Nd0.35Sr0.3MnO3 epitaxial films

The colossal negative magnetoresistance (approximately 12%) in a field of 8.4 kOe over a wide range of temperatures below the Curie point T _C ≈240 K in a single-crystal La_0.35Nd_0.35Sr_0.3MnO₃ film on a single-crystal (001)ZrO₂(Y₂O₃) wafer substrate is discussed. Isotherms of the magnetoresistance of this film reveal that its absolute value increases with the field, abruptly in the technical magnetization range and almost linearly in stronger fields. For three single-crystal films of the same composition on (001)LaAlO₃, (001)SrTiO₃, and (001)MgO substrates, colossal magnetoresistance only occurred near T _C ≈240 K and at T<T _C it increased weakly, almost linearly, with the field. In the film on a ZrO₂(Y₂O₃) substrate the electrical resistivity was almost 1.5 orders of magnitude higher than that in the other three films. It is shown that this increase is attributable to the electrical resistance of the interfaces between microregions having four types of crystallographic orientations, while the magnetoresistance in the region before technical saturation of the magnetization is attributable to tunneling of polarized carriers across these interfaces which coincide with the domain walls (in the other three films there is one type of crystallographic orientation). The reduced magnetic moment observed for all four samples, being only 46% of the pure spin value, can be attributed to the existence of magnetically disordered microregions which originate from the large thickness of the domain walls which is greater than the size of the crystallographic microregions and is of the same order as the film thickness. The colossal magnetoresistance near T _C and the low-temperature magnetoresistance in fields exceeding the technical saturation level can be attributed to the existence of strong s-d exchange which is responsible for a steep drop in the carrier mobility (holes) and their partial localization at levels near the top of the valence band. Under the action of the magnetic field the carrier mobility increases and they become delocalized from these levels.     

Connection between colossal magnetoresistance in La0.85Sr0.15MnO3 and magnetic ordering inhomogeneities of a sample

Resistive and magnetic measurements are made for La_0.85Sr_0.15MnO₃. The dependence of resistivity on the applied magnetic field (10, 20, 30, and 50 kOe) and temperature (200–310 K) is analyzed using the s-d model and the obtained experimental data. The physical features that should be contained in models proposed to explain the colossal magnetoresistance of manganites with activation-type conductivity are determined. It is shown that the proposed mechanism associating the colossal magnetoresistance effect with phase separation into ferromagnetic and paramagnetic microregions near the Curie temperature has the necessary features.     

Hall resistivity in ferromagnetic manganese-oxide compounds

The transport properties of manganese-oxides are studied using the spin correlation fluctuation scattering mechanism. It is shown that the Hall resistivity in a small magnetic field exhibits a maximum near the Curie point, and a strong field shifts the peak position to high temperature and suppresses the peak value; the dependence of the Hall resistivity on the magnetic field above T_c and below T_c is different. These results agree with the experimental curves qualitatively, but disagree quantitatively, which indicates that the spin correlation fluctuation scattering might not be the dominant mechanism of the colossal magnetoresistance. The double polaron mechanism due to strong electron-phonon and electron-spin coupling is proposed to be responsible for the colossal magnetoresistance in manganese-oxides.     

Magnetoresistance of lanthanum manganites with activation-type conductivity

The temperature dependence of the resistivity and magnetic moment of La_0.85Ba_0.15MnO₃ and La_0.85Sr_0.15MnO₃ manganite single crystals in magnetic fields up to 90 kOe is investigated. Analysis of the experimental results shows that the magnetoresistance of lanthanum manganites far from the Curie temperature T _C can be described quantitatively by the s-d model normally used for ferromagnets and taking into account only the exchange interaction between the spins of charge carriers and magnetic moments. These data also show that the features of lanthanum manganites responsible for colossal magnetoresistance (CMR) are manifested in a narrow temperature interval δT ≈ 20 K near T _C. Our results suggest a CMR mechanism analogous to the mechanism of giant magnetoresistance (GMR) observed in Fe/Cr-type multilayers with nanometer layer thickness. The nanostratification observed in lanthanum manganites and required for GMR can be described taking into account the spread in T _C in the CMR range δT.     

Giant volume magnetostriction and colossal magnetoresistance in La0.7Ba0.3MnO3 at room temperature

In single-crystal La_0.7Ba_0.3MnO₃, giant volume magnetostriction was observed for the first time to reach 2.54 × 10^?4 at room temperature and a still larger level of 4 × 10^?4 at the Curie point T _C = 310 K in a magnetic field of 8.2 kOe. At the same temperatures and magnetic field, this effect is complemented by a colossal magnetoresistance of 15.2 and 22.7%, respectively. The volume magnetostriction ω and magnetoresistance Δρ/ρ follow similar patterns in the proximity of T _C; namely, ω and Δρ/ρ are negative, maxima are observed in the |ω|(T) and |Δρ/ρ|(T) curves, and the ω and Δρ/ρ isotherms do not saturate in the highest fields applied. These phenomena are assigned to the fact that, in the above composition, there exists a two-phase magnetic (ferromagnetic-antiferromagnetic) state induced by strong s–d exchange.     

Colossal Magnetoresistance of Layered Manganite La<Subscript>1.2</Subscript>Sr<Subscript>1.8</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Its Description by a “Spin–Polaron” Conduction Mechanism

The resistance of a La_1.2Sr_1.8Mn_2(1–z)O₇ single crystal has been studied in magnetic fields from 0 to 90 kOe. The magnetoresistance at temperature T = 75 K, near which a colossal magnetoresistance maximum is observed, has been successfully described in terms of the “spin–polaron” electric conduction mechanism. This value of the colossal magnetoresistance is due to a three-fold increase in the polaron size. The method of separating contributions of various conduction mechanisms to the magnetoresistance developed for materials with activation type of conduction is generalized to compounds in which a metal–insulator transition is observed. It is found that, at a temperature of 75 K, the contribution of the “orientation” mechanism is maximum (≈20%) in a magnetic field of 5 kOe and almost disappears in fields higher than 50 kOe.     

Co-existence of giant magnetoresistance and large magnetocaloric effect near room temperature in nanocrystalline La0.7Te0.3MnO3

Sol-gel prepared nanocrystalline La_0.7Te_0.3MnO₃ has rhombohedral crystal structure (space group R3¯C) at room temperature and orders ferromagnetically at ∼280 K (T_C). A large magnetic entropy change of ∼12.5 J kg⁻¹ K⁻¹ is obtained near T_C for a field change of 50 kOe. This magnetocaloric effect could be explained in terms of Landau theory. The temperature dependence of electrical resistivity shows metal-insulator transition at T_C and a giant magnetoresistance of ∼52% in 50 kOe. The co-existence of giant magnetoresistance and large magnetocaloric effect near room temperature makes nanocrystalline La_0.7Te_0.3MnO₃ a promising material for magnetic refrigeration and spintronic device applications.     

Giant magnetocaloric effect near the curie temperature in the Sm0.6Sr0.4MnO3 manganite

A method is proposed for the calculation of the magnetocaloric effect from simultaneous measurements of thermal expansion and magnetostriction made in different regimes (adiabatic and isothermal). The magnitude of the magnetocaloric effect for Sm_0.6Sr_0.4MnO₃ is estimated. It is found that near the Curie temperature T _C it passes through a maximum to reach a giant value ΔT=4.6 K for ΔB=0.84 T. In addition, in the neighborhood of T _C, we observed colossal magnetoresistance Δρ/ρ = [ρ(H) ? ρ(0)]/ρ(0) = 72% in a weak magnetic field of 0.84 T, a giant negative volume magnetostriction ω=?5×10^?4 in a field of the same strength, and a large change in the sample volume ΔV/V ≈ 0.1%.     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Acoustic and magnetic properties of La<Subscript>0.825</Subscript>Sr<Subscript>0.175</Subscript>MnO<Subscript>3</Subscript> lanthanum manganites

This paper reports on measurements of the acoustic, magnetic, and electrical properties and on an x-ray microprobe analysis of a La_0.825Sr_0.175MnO₃ single-crystal sample. The acoustic studies were made with a pulsed acoustic spectrometer operating on a 770-MHz carrier. The studies revealed anomalies in the damping coefficients and sound velocity near 300, 200 K, and the Curie temperature T_C (283 K) where the colossal magnetoresistance occurs. The effect of a magnetic field on the magnetic texture of lanthanum manganites cooled below T_C, observed earlier in samples of other composition, is confirmed. In addition, a region was found wherein the magnetic susceptibility of an unclamped sample behaves anomalously. The electrical resistivity was observed to decrease substantially below T_C; this effect exhibits a hysteretic pattern in the interval 200–180 K.     

Relation between giant volume magnetostriction and colossal magnetoresistance near the Curie temperature of Sm0.55Sr0.45MnO3

The magnetic, transport, and elastic properties of Sm_0.55Sr_0.45MnO₃ have been established to be interrelated. At the Curie point, one observes a large volume compression ΔV/V≈0.1%, a sharp minimum in the temperature dependence of negative volume magnetostriction ω(T), and a maximum in the temperature dependence of the electrical resistivity. Giant negative volume magnetostriction ω=?5×10^?4 has been found in a magnetic field H=0.9 T, which is accompanied by a colossal negative magnetoresistance of 44% in the same field. The results obtained are discussed in terms of a model of electronic phase separation.     

Origin of the conductivity minimum and the negative magnetoresistance in n-type sulpho-spinels

Electrical conductivity and magnetoresistance in Ga-doped and undoped sulpho-spinels have been studied. The influence of annealing treatments on the electrical properties is discussed and results are given. It is shown, that the conductivity minimum and the negative magnetoresistance found in Ga-doped samples at temperatures near T_c, are due to impurity conductivity of the magnetic impurity state type.     

Two-phase paramagnetic-ferromagnetic state of La<Subscript>0.7</Subscript>Pb<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> single-crystal lanthanum manganite

Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T _C in La_0.7Pb_0.3MnO₃ single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10–78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study.     

Positive magnetoresistance due to impurity interactions in dilute AuCr alloys

The magnetoresistance of dilute AuCr alloys (2.3–322 at.ppm) has been measured in a wide region of temperature (5-3K) and of magnetic field (up to 60 kG).The “modified Kohler's rule” was used to extract the spin dependent magnetoresistance (?_M) from measured total magnetoresistance.The results has shown that, except for the most dilute specimen, ?_M includes explicitly a positive component in addition to the ordinary negative magnetoresistance proportional to log (H/T). We have attributed this positive ?_M to the effect of the interactions between the Cr impurities by taking consideration of the generalized phase shift expression of magnetoresistance proposed by Soultie.     

Positive magnetoresistance peaked at a ferromagnetic transition in Mn-doped GaAs/AlGaAs quantum wells

A large positive magnetoresistance peaked at the Curie temperature has been observed in quantum well structures GaAs/AlGaAs doped by Mn. We suggest a new mechanism of magnetoresistance within low T _c ferromagnets resulting from a pronounced dependence of spin polarization at the vicinity of T _c on the external magnetic field. As a result, any contribution to resistance dependent on the Zeeman splitting of the spin subbands is amplified with respect to the direct effect of the external field. In our case we believe that the corresponding contribution is related to the upper Hubbard band. We propose that the mechanism considered here can be exploited as the mark of ferromagnetic transition.     

Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB₁₂ (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8–35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler’s rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB₁₂. In the magnetic dodecaborides HoB₁₂, ErB₁₂, and TmB₁₂, three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB₁₂ is observed at T > 25 K; in the range T _N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T < T _N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB₁₂. It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB₁₂ and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation.     

Phase transitions and colossal magnetoresistance in CuVxCr1−x S2 layered disulfides

New substances CuV_xCr_1?x S₂ are synthesized in which colossal magnetoresistance (T _C = 95 K, δ_H = ?60%, H = 7 kOe), as well as the sequence of phase transitions with change in the conduction type and magnetic order, is observed as temperature is varied. The change found in the magnetic and electric properties of the CuV_xCr_1?x S₂ compounds may be a consequence of a specific disintegration into Cu⁺Cr³⁺S₂ and Cu²⁺Cr²⁺S₂ and a change in the concentration relation between these electronic phases in the substance bulk.     

Percolation magnetoresistance in ferromagnetic superconductors

It is shown that the magnetoresistance (as a function of magnetic field H) in polycrystalline magnetic superconductors has the percolation character which is the consequence of the anisotropy of magnetic susceptibility. The magnetoresistance R_m(H), and the upper critical field H_c2(T) of ErRh₄B₄ are evaluated and compared with the experimental data.