Construction and characterization of alkoxy-derived (Y,Yb)MnO<Subscript>3</Subscript>/HfO<Subscript>2</Subscript>/Si structures for FeRAM application

(Y,Yb)MnO₃ and HfO₂ films were prepared using alkoxy-derived precursor solutions, and (Y,Yb)MnO₃/HfO₂/Si structures were fabricated. The thickness, surface uniformity and crystallinity of the HfO₂ film affect the crystallization of Y_0.5Yb_0.5MnO₃ films. The degree of c-axis orientation and crystallinity of the Y_0.5Yb_0.5MnO₃ films were changed with preparation conditions of HfO₂ films. It was difficult to obtain Y_0.5Yb_0.5MnO₃ films with high crystallinity and high degree of c-axis orientation on the HfO₂ films thinner than 10 nm. The degree of c-axis orientation and crystallinity of the Y_0.5Yb_0.5MnO₃ films on HfO₂ films were improved by using diluted HfO₂ precursor solution in the case of 10 nm-thick HfO₂ film. Following this, the capacitance-voltage (C-V) characteristics were improved.     

Low-temperature processing of sol-gel derived Pb(Zr,Ti)O<Subscript>3</Subscript> thick films using CO<Subscript>2</Subscript> laser annealing

Fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films on a Pt/Ti/SiO₂/Si substrate using powder-mixing sol-gel spin coating and continuous wave CO₂ laser annealing technique to treat the specimens with at a relatively low temperature was investigated in the present work. PZT fine powders were prepared by drying and pyrolysis of sol-gel solutions and calcined at temperatures from 400 to 750°C. After fine powder-containing sol-gel solutions were spin-coated on a substrate and pyrolyzed, CO₂ laser annealing was carried out to heat treat the specimens. The results show that laser annealing provides an extremely efficient way to crystallize the materials, but an amorphous phase may also form in the case of overheating. Thicker films absorb laser energy more effectively and therefore melt at shorter periods, implying a significant volume effect. A film with thickness of 1 μm shows cracks and rough surface morphology and it was difficult to obtain acceptable electrical properties, indicating importance of controlling interfacial stress and choosing appropriate size of the mixing powders. On the other hand, a thick film of 5 μm annealed at 100 W/cm² for 15 s exhibits excellent properties (P _r = 36.1 μC/cm², E _c = 19.66 kV/cm). Films of 10 μm form a melting zone at the surface and a non-crystallized bottom layer easily at an energy density of 100 W/cm², showing poor electrical properties. Besides, porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting that CO₂ laser annealing of modified sol-gel films is suitable for fabricating films of low dielectric constants and high crystallinity.     

The microstructure and magnetic properties of Ni<Subscript>0.4</Subscript>Zn<Subscript>0.6</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> films prepared by spin-coating method

Nickel zinc ferrite (Ni_0.4Zn_0.6Fe₂O₄) films on Si (100) substrate were synthesized using a spin-coating method. The crystallinity of the Ni_0.4Zn_0.6Fe₂O₄ films with the thickness of about 386 nm became better as the annealing temperature increased. The films have smooth surface, relatively good packing density and uniform thickness. The volatilization of Zn is serious at 900 °C. With the increase of annealing temperature, the saturation magnetization M _s increases in the temperature ranging from 400 to 700 °C, however, decreases above 700 °C, and the coercivity H _c increases in the temperature range 400–800 °C, decreases above 800 °C. After annealed at 700 °C for 2 h in air with the heating rate 2 °C/min, the film shows a maximum saturation magnetization M _s of 349 emu/cc and low coercivity H _c of 66 Oe. The M _s is higher than others which prepared by this method, however, the H _c is lower. The M _s of Ni_0.4Zn_0.6Fe₂O₄ films annealed at 700 °C increases with increasing annealing time and the H _c changes slightly.     

Site engineering in chemical-solution-deposited Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films using Ce,Zr, Mn and Si atoms

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were fabricated by depositing sol-gel solutions on Pt(111)/Ti/SiO₂/Si (100) substrates. Crystallographic orientations of the BLT films were random, but the preferred orientations along (00l) and (117) axes were found. All films showed a single-phase bismuth-layered structure but the orientation in the films could be engineered by optimizing the growth condition, as well as by introducing dopant atoms such as Ce and Zr in the films, which in turn influenced the ferroelectric properties of the films significantly. The shape of c-axis-oriented grains was more plate-like, while that of (117)-oriented grains was rod-like. Small % substitution of Ce, Mn, and Zr atoms at Ti site enhanced the remanent polarization by approximately 20%, while substitution of Si atoms reduced the remanent polarization in BLT films but improved insulating properties. It was also demonstrated that fatigue endurance could be controlled by the concentration of dopant atoms, which was thought to be due to the decrease in oxygen vacancy concentration.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.     

Sol-gel processing of lead-free (Na,K)NbO<Subscript>3</Subscript> ferroelectric films

The sol-gel processing of lead-free (Na,K) NbO₃ ferroelectric films was studied. Sodium ethoxide (NaOC₂H₅) and potassium ethoxide (KOC₂H₅) were prepared by reacting solid Na and K with ethanol (99.7%) in a solvent of 2-methoxyethanol. 0.5-μm-thick (Na,K)NbO₃ thin films with orthorhombic perovskite structure were obtained by pyrolyzing at 400°C and annealing at 800–900°C. The films had relatively dense and uniform microstructure with grain size of about 50 nm, whose ferroelectricity was proved by the P-E hysteresis loop measurement. It was found that excess K was effective to reduce the annealing temperature for the crystallization of sol-gel-derived (Na,K)NbO₃ thin films.     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Preparation and electrical properties of Nd and Mn co-doped Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Ferroelectric thin films of Nd and Mn co-doped bismuth titanate, Bi_3.15Nd_0.85Ti_3−x Mn _x O₁₂ (BNTM) (x = 0–0.1), were fabricated on Pt/TiO₂/SiO₂/Si(100) substrates by a sol–gel technique. The BNTM films had a polycrystalline perovskite structure and uniform and dense surface morphologies. A lattice distortion was observed in the BNTM films due to Mn ion doping. The ferroelectric measurement of the films indicated that the values of coercive field (E _c ) decreased gradually with the increase of the Mn content (x), however, the remanent polarization (P _r ) increase firstly and then decrease with the increase of x. The sample with x = 0.05 had optimum electrical properties and a maximum 2P _r value. The 2P _r and 2E _c values of the film at a maximum applied electric field of 400 kV/cm were 38.3 μC/cm² and 180 kV/cm, respectively. Moreover, this BNTM capacitors did not show fatigue behaviors after 1.0 × 10¹⁰ switching cycles at a frequency of 1 MHz, suggesting a fatigue-free character. The main reason for the increase of the 2P _r and the decrease of the 2E _c might be attributed to the lattice distortion in BNTM films due to Mn ion doping.     

Formation of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> bilayer using atomic layer deposition and its application to dynamic random access memory

To enhance film conformality together with electrical property suitable for dynamic random access memory (DRAM) capacitor dielectric, the effects of oxidant and post heat treatment were investigated on aluminum and titanium oxide (Al₂O₃–TiO₂) bilayer (ATO) thin film formed by atomic layer deposition method. For the conformal deposition of Al₂O₃ thin film, the O₃ oxidant required a higher deposition temperature, more than 450 °C, while H₂O or combined oxygen sources (H₂O+O₃) needed a wide range of deposition temperatures ranging from 250 to 450 °C. Conformal deposition of the TiO₂ thin film was achieved at around 325 °C regardless of the oxidants. The charge storage capacitance, measured from the ATO bilayer (4 nm Al₂O₃ and 2 nm TiO₂) deposited at 450 °C for Al₂O₃ and 325 °C for TiO₂ with O₃ oxidant on the phosphine-doped poly silicon trench, showed about 15% higher value than that of 5 nm Al₂O₃ single layer thin film without any increase of leakage current. To maintain the improved electrical property of the ATO bilayer for DRAM application, such as enhanced charge capacitance without increase of leakage current, upper electrode materials and post heat treatments after electrode formation must be selected carefully. Dedicated to Professor Su-Il Pyun on the occasion of his 65th birthday.     

Dielectric properties and I-V characteristics of (Pb<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>)TiO<Subscript>3</Subscript> thin films improved by TiO<Subscript>2</Subscript> buffer layers

A TiO₂ thin buffer layer was introduced between the (Pb_0.4Sr_0.6)TiO₃ (PST) film and the Pt/Ti/SiO₂/Si substrate in an attempt to improve their electrical properties. Both TiO₂ and PST layers were prepared by a chemical solution deposition method. It was found that the TiO₂ buffer layer increased the (100)/(001) preferred orientation of PST and decreased the surface roughness of the films, leading to an enhancement in electrical properties including an increase in dielectric constant and in its tunability by DC voltage, as well as a decrease in dielectric loss and leakage current density. At an optimized thickness of the TiO₂ buffer layer deposited using 0.02 mol/l TiO₂ sol, the 330-nm-thick PST films had a dielectric constant, loss and tunability of 1126, 0.044 and 60.7% at 10 kHz, respectively, while the leakage current density was 1.95 × 10⁻⁶ A/cm² at 100 kV/cm.     

Preparation and Ferroelectric Properties of YMnO3 Thin Films with c-Axis Preferred Orientation by the Sol-Gel Method

Hexagonal YMnO₃ has a ferroelectric property with an optimal remanent polarization along the c-axis. The c-axis oriented YMnO₃ thin films with a small leakage current were prepared by the sol-gel dipping method. The c-axis orientation of the films was promoted by the addition of diethanolamine to the Mn precursor solution. A heat treatment with multiple steps led to a dense film structure with fine grains. The dense structure resulted in the decrease of the leakage current. Furthermore, when the films were heat-treated in a vacuum, the leakage current became considerably small and the ferroelectricity of the YMnO₃ thin films was observed even at room temperature.     

Ammonia gas sensor based on a spinel semiconductor,Co<Subscript>0.8</Subscript>Ni<Subscript>0.2</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanomaterial

Thick film of nanocrystalline Co_0.8Ni_0.2Fe₂O₄ was obtained by sol–gel citrate method for gas sensing application. The synthesized powder was characterized by X-ray diffraction (XRD) and transmission electron microscopy. The XRD pattern shows spinel type structure of Co_0.8Ni_0.2Fe₂O₄. XRD of Co_0.8Ni_0.2Fe₂O₄ revels formation of solid solution with average grain size of about 30 nm. From gas sensing properties it observed that nickel doping improves the sensor response and selectivity towards ammonia gas and very low response to LPG, CO, and H₂S at 280 °C. Furthermore, incorporation of Pd improves the sensor response and stability of ammonia gas and reduced the operating temperature upto 210 °C. The sensor is a promising candidate for practical detector of ammonia.     

Fabrication and properties of xBiFeO3-(1 − x)Bi4Ti3O12 system by sol–gel process

The thin films of mixture of xBiFeO₃-(1 − x)Bi₄Ti₃O₁₂ (x = 0.4, 0.5, and 0.6) system were prepared by a sol–gel process. The thicknesses of the thin films were 540, 500, and 570 nm, respectively. The crystal structure of all thin films annealed at 650 °C was analyzed by X-ray diffraction. It was found that the thin films at x = 0.4 and 0.5 mainly consisted of a Bi₄Ti₃O₁₂ phase while Bi₅Ti₃FeO₁₅ was the major phase of the thin film at x = 0.6. The thin film (x = 0.6) showed better ferroelectric properties in remnant polarization and polarization fatigue than those observed in the thin films (x = 0.4 and 0.5). The values of remnant polarization 2P _r and coercive field 2E c of the thin film at x = 0.6 were 36 μC/cm² and 192 kV/cm at an applied electric field of 260 kV/cm, respectively. There was almost no polarization fatigue up to 10¹⁰ switching cycles. Also weak ferromagnetism was observed in the thin film at x = 0.6.     

Synthesis,Ferroelectric and Optical Properties of (Pb,Ca)TiO3 Thin Films by Soft Solution Processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb_0.7Ca_0.3TiO₃ thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600°C for 2 h. The remanent polarization (2P_r) and coercive field (E _c) were 32 C/cm² and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600°C, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Effect of calcination temperature on the microstructure of porous TiO<Subscript>2</Subscript> film

To obtain porous TiO₂ film, the precursor sol was prepared by hydrolysis of Ti isopropoxide and then complexed with trehalose dihydrate. The porous TiO₂ film was fabricated by the dip-coating technique on glass substrates using this solution. The TiO₂ film was calcined at 500 °C. The maximum thickness of the film from one-run dip-coating was ca. 740 nm. The film was composed of nanosized particle and pores. The porosity of the TiO₂ film was increased by addition of trehalose dihydrate to the sol. The porous TiO₂ films were calcined at different temperatures. The effects of calcination temperature on the microstructure of the porous TiO₂ film were investigated. The porous film prepared from sol containing trehalose still kept the porous structure after calcination at 950 °C. The phase transition temperature of the film from anatase to rutile was shifted from 650 to 700 °C by addition of trehalose to the sol.     

Comparative study of the structural,optical, and electrical properties of CuAlO<Subscript>2</Subscript> thin films on Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and YSZ substrates via chemical solution deposition

Single-phase delafossite CuAlO₂ thin films are deposited successfully on Al₂O₃ (001) and YSZ (100) substrates using the chemical solution method. X-ray diffraction data present that the CuAlO₂ film on the Al₂O₃ (001) substrate is epitaxial, whereas that on YSZ (100) is c-axis oriented; the same is also demonstrated by the HRTEM images and SAED patterns. Optical transmittance spectra exhibit that both films have high transparency in the visible region. However, in this region, the optical transmittance of the CuAlO₂ thin film deposited on (001) Al₂O₃ is inferior to that deposited on (100) YSZ. This optical anomaly can be attributed to surface scattering. Electrical transport measurements show that the resistivity of the film on (001) Al₂O₃ is one order lower than that on (100) YSZ, suggesting that in-plane orientation is significant in improving hole mobility.     

Combined laser and magnetic field treatment of YFeO<Subscript>3</Subscript>—containing films grown by spray-pyrolysis

Thin films (50–1200 nm) of YFeO₃ were deposited on fused silica substrates by spray-pyrolysis using ethylene glycol solution of Y-Fe(III) citric complexes. The films were post deposition annealed at 750°C in static air for 2 h. Films obtained in this way were afterwards irradiated by a burst mode operated Nd-YAG laser (pulse energy 650 mJ, pulse duration 700 μs, energy density 110 mJ/cm²). The laser’s onset was synchronized with that of a magnetic field pulse of nearly square shape (magnetic induction 0.5 T, pulse duration 900 μs). The samples were placed normally to the direction of the magnetic field. The treatment does not affect the phase composition of the film but significantly increases the crystallite sizes of the phases presenting in the sample. The saturation magnetization of the films decreases as a result of the laser and magnetic field treatment and the coercive force increases by 50%.     

Dielectric and tunable properties of highly (110)-oriented (Ba<Subscript>0.65</Subscript>Sr<Subscript>0.35</Subscript>)TiO<Subscript>3</Subscript> thin films deposited on Pt/LaNiO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrates

Highly (110)-oriented Ba_0.65Sr_0.35TiO₃ films were deposited on Pt/LaNiO₃/SiO₂/Si substrates by a sol–gel method. It was found that the (110)-preferred Pt film was very effective for growing (110)-oriented ferroelectric films with perovskite structure. The as-grown Ba_0.65Sr_0.35TiO₃ films showed good dielectric properties with dielectric constant and loss tangent tan δ = 0.026. Excellent dielectric tunability was also achieved in the (110)-oriented films. With applying an electric field of 230 kV/cm at 100 kHz, the dielectric tunability and the figure of merit can reach up to 63.4% and 16, respectively. These results indicate that the highly (110)-oriented Ba_0.65Sr_0.35TiO₃ film is a promising candidate for the applications in microwave tunable devices.     

Hydrothermal synthesis,structure and photocatalytic property of nano-TiO<Subscript>2</Subscript>-MnO<Subscript>2</Subscript>

TiCl₄ and MnSO₄· H₂O as raw materials are hydrolyzed stiochiometrically, following the intermediate of oxide hydrating reacts at 150°C, 0.5 MPa in high-pressure reactor, after filtering, washing and drying, nanometric TiO₂-MnO₂ (Ti_1-X Mn _X O₂) is prepared. The effects of the reaction temperature and time on nanometric TiO₂-MnO₂ are also discussed. XRD shows that the product is TiO₂-MnO₂ with amorphous phase. After being sintered at above 780 °C, it transfers into Ti_1-X Mn _X O₂ with a rutile structure. TEM shows that TiO₂-MnO₂ is the spherical particle. And the average diameter of the particles is 20 nm. The optical absorbance was determined by UV-265 spectrophotometer after dispersing the sample in the mixture of water and glycerol with the ratio of 1 : 1 equably. It is found that the nano-material possesses the advantages of both nano-TiO₂ and nano-MnO₂, and it has strong absorption in the UV and visible region. Photodegradation of dyes in an aqueous solution is investigated using nanometricTiO₂-MnO₂ as a photocatalyst. The results show that after 60 min illumination, the decolorization rate of the acidic red B and acidic black 234 dye can be as high as 100%.