共查询到20条相似文献,搜索用时 15 毫秒
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T. Paskova R. Yakimova E. Valcheva K. Germanova 《Applied Physics A: Materials Science & Processing》1993,56(1):69-72
A computer simulation study of the capacitance of a surface space charge layer in undoped n-GaAs grown by metalorganic vapour phase epitaxy is presented. The effect of the deep donor level EL2 on the surface capacitance of epilayers with an ideal free surface is estimated. In order to approach the as-grown layer surface the model used is extended considering MIS and Schottky-barrier structures and their voltage-capacitance curves are analysed. The theoretical C-V dependences are compared with experimental C-V curves of a real structure including N+-GaAs substrate, undoped n-GaAs epitaxial layer containing EL2 levels and thin native oxide. Conditions are determined at which the EL2 levels as well as the native oxide film may influence the capacitance characteristics. 相似文献
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T. Ohshima A. Uedono K. Abe H. Itoh Y. Aoki M. Yoshikawa S. Tanigawa I. Nashiyama 《Applied Physics A: Materials Science & Processing》1998,67(4):407-412
Received: 18 February 1998/Accepted: 5 June 1998 相似文献
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R. Krause-Rehberg H.S. Leipner T. Abgarjan A. Polity 《Applied Physics A: Materials Science & Processing》1998,66(6):599-614
1-x CdxTe after post-growth annealing. The experiments on defect generation and annihilation after low-temperature electron irradiation
of II-VI compounds are also reviewed. The characteristic positron lifetimes are given for cation and anion vacancies.
Received: 19 November 1997/Accepted: 20 November 1997 相似文献
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M. Tamura Y. Hiroyama A. Nishida M. Horiuchi 《Applied Physics A: Materials Science & Processing》1998,66(4):373-384
14 /cm2 dose of As ions followed by both isochronal and isothermal annealing. The elementary defects generated first during solid-phase
epitaxial recovery of implantation-induced amorphous layers at temperatures of 550 °C and/or 600 °C are {311} defects 2–3 nm
long. They are considered to be transformed into {111} and {100} defects after annealing at temperatures higher than 750 °C.
These secondary defects show the opposite annealing behavior to the dissolution and growth by the difference of their depth
positions at 800 °C. This phenomenon is explained by the diffusion of self-interstitials contained in defects. With regard
to the formation and dissolution of defects, there is no significant difference between the effects of rapid thermal annealing
(950 °C for 10 s) and furnace annealing (800 °C for 10 min).
Received: 14 November 1997/Accepted: 16 November 1997 相似文献
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详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导. 相似文献
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C.E. Gonzalez S.C. Sharma N. Hozhabri D.Z. Chi S. Ashok 《Applied Physics A: Materials Science & Processing》1999,68(6):643-645
Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control
sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed
at 500 °C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron
implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer,
respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5×1017 cm-3.
Received: 4 September 1998 / Accepted: 5 January 1999 / Published online: 28 April 1999 相似文献
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