Anomalous robustness of the ν=5/2 fractional quantum Hall state near a sharp phase boundary

We report magnetotransport measurements in wide GaAs quantum wells with a tunable density to probe the stability of the fractional quantum Hall effect at a filling factor of ν=5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy (E(F)) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once E(F) moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.     

Reentrant ν=1 quantum Hall state in a two-dimensional hole system

We report the observation of a reentrant quantum Hall state at the Landau level filling factor ν=1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the ν=1 quantum Hall state in the presence of a parallel magnetic field component B(∥), followed by a strengthening and reemergence as B(∥) is further increased. The robustness of the ν=1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B(∥) needed to invoke the transition increases with the total density of the system.     

Signatures of non-Abelian statistics in nonlinear Coulomb blockade transport

Signatures of the non-Abelian statistics of quasiparticles in the ν=5/2 quantum Hall state are predicted to be present in the current-voltage characteristics of tunneling through one or two quantum Hall puddles of Landau filling ν(a) embedded in a bulk of filling ν(b) with (ν(a),ν(b))=(2,5/2) and (ν(a),ν(b))=(5/2,2).     

Observation of reentrant integer quantum Hall States in the lowest landau level

Measurements on very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal a close competition between the electron liquid and solid phases near the Landau level filling factor ν=1. As the density is raised, the fractional quantum Hall liquid at ν=4/5 suddenly disappears at a well-width dependent critical density, and then reappears at higher densities with insulating phases on its flanks. These insulating phases exhibit reentrant ν=1 integer quantum Hall effects and signal the formation of electron Wigner crystal states. Qualitatively similar phenomena are seen near ν=6/5.     

Fractionalization via Z(2) gauge fields at a cold-atom quantum Hall transition

We study a single species of fermionic atoms in an "effective" magnetic field at total filling factor ν(f)=1, interacting through a p-wave Feshbach resonance, and show that the system undergoes a quantum phase transition from a ν(f)=1 fermionic integer quantum Hall state to ν(b)=1/4 bosonic fractional quantum Hall state as a function of detuning. The transition is in the (2+1)D Ising universality class. We formulate a dual theory in terms of quasiparticles interacting with a Z(2) gauge field and show that charge fractionalization follows from this topological quantum phase transition. Experimental consequences and possible tests of our theoretical predictions are discussed.     

Fractional quantum Hall effect at high fillings in a two-subband electron system

Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2, 3, 4 and p=1, 2, 3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.     

Anyon condensation and continuous topological phase transitions in non-Abelian fractional quantum Hall states

We find a series of possible continuous quantum phase transitions between fractional quantum Hall states at the same filling fraction in two-component quantum Hall systems. These can be driven by tuning the interlayer tunneling and/or interlayer repulsion. One side of the transition is the Halperin (p,p,p-3) Abelian two-component state, while the other side is the non-Abelian Z4 parafermion (Read-Rezayi) state. We predict that the transition is a continuous transition in the 3D Ising class. The critical point is described by a Z2 gauged Ginzburg-Landau theory. These results have implications for experiments on two-component systems at ν=2/3 and single-component systems at ν=8/3.     

Manifestation of the bulk phase transition in the edge energy spectrum in a two-dimensional bilayer electron system

We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at a total filling factor of ν=2. By analyzing nonlinear I–V curves in normal and tilted magnetic fields, we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk phase transition spin-singlet-canted antiferromagnetic phase, the I–V curve becomes linear, indicating the disappearance or strong narrowing of the ν=1 incompressible strip at the edge of the sample.     

Characterizing neutral modes of fractional states in the second Landau level

Fractionally charged quasiparticles, which obey non-abelian statistics, were predicted to exist in the ν=8/3, ν=5/2, and ν=7/3 fractional quantum Hall states (in the second Landau level). Here we present measurements of charge and neutral modes in these states. For both ν=7/3 and ν=8/3 states, we found a quasiparticle charge e=1/3 and an upstream neutral mode only in ν=8/3-excluding the possibility of non-abelian Read-Rezayi states and supporting Laughlin-like states. The absence of an upstream neutral mode in the ν=7/3 state also proves that edge reconstruction was not present in the ν=7/3 state, suggesting its absence also in ν=5/2 state, and thus may provide further support for the non-abelian anti-pfaffian nature of the ν=5/2 state.     

Breaking of particle-hole symmetry by Landau level mixing in the ν=5/2 quantized Hall state

We perform numerical studies to determine if the fractional quantum Hall state observed at a filling factor of ν=5/2 is the Moore-Read wave function or its particle-hole conjugate, the so-called anti-Pfaffian. Using a truncated Hilbert space approach we find that, for realistic interactions, including Landau-level mixing, the ground state remains fully polarized and the anti-Pfaffian is strongly favored.     

Zero-bias anomalies in narrow tunnel junctions in the quantum Hall regime

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors ν>1 and a strongly suppressed conductance for ν<1. A transition between the two behaviors is found near ν≈1. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for ν<1 occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the n=0 Landau levels. The ZBA for ν>1 arises from weak tunneling of quasiparticles between the n=1 edge channels.     

On fractional quantum Hall solitons in ABJM-like theory

Using D-brane physics, we study fractional quantum Hall solitons (FQHS) in ABJM-like theory in terms of type IIA dual geometries. In particular, we discuss a class of Chern-Simons (CS) quivers describing FQHS systems at low energy. These CS quivers come from R-R gauge fields interacting with D6-branes wrapped on 4-cycles, which reside within a blown up CP³ projective space. Based on the CS quiver method and mimicking the construction of del Pezzo surfaces in terms of CP², we first give a model which corresponds to a single layer model of FQHS system, then we propose a multi-layer system generalizing the doubled CS field theory, which is used in the study of topological defect in graphene.     

Quantized ν = 5/2 state in a two-subband quantum hall system

The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single- to two-subband occupancy. In 80 and 60 nm wells, the quantum Hall state at 5/2 filling of the lowest subband is observed even when the second subband is occupied. In a 50 nm well, the 5/2 state vanishes upon second subband population. We attribute this distinct behavior to the width dependence of the capacitive energy for intersubband charge transfer and of the overlap of the subband probability densities.     

New phase transition between partially and fully polarized quantum Hall states with charge and spin gaps at nu = 2/3

The average electron spin polarization Rho of a two-dimensional electron gas confined in GaAs/GaAlAs multiple quantum wells was measured by NMR near the fractional quantum Hall state with filling factor nu = 2/3. Above this filling factor (2/3< or = nu < 0.85), a strong depolarization is observed corresponding to two spin flips per additional flux quantum. The most remarkable behavior of the polarization is observed at nu = 2/3, where a quantum phase transition from a partially polarized (Rho approximately 3/4) to a fully polarized (Rho = 1) state can be driven by increasing the ratio between the Zeeman and the Coulomb energy above a critical value eta(c) = Delta(Z)/Delta(C) = 0.0185.     

Integer quantum Hall effect in trilayer graphene

By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.     

Nonconventional odd-denominator fractional quantum Hall states in the second Landau level

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor ν=2+6/13. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.     

Atypical fractional quantum Hall effect in graphene at filling factor 1/3

We study, with the help of exact-diagonalization calculations, a four-component trial wave function that may be relevant for the recently observed graphene fractional quantum Hall state at a filling factor ν(G) = 1/3. Although it is adiabatically connected to a 1/3 Laughlin state in the upper spin branch, with SU(2) valley-isospin ferromagnetic ordering and a completely filled lower spin branch, it reveals physical properties beyond such a state that is the natural ground state for a large Zeeman effect. Most saliently, it possesses at experimentally relevant values of the Zeeman gap low-energy spin-flip excitations that may be unveiled in inelastic light-scattering experiments.     

Magnetoconductance oscillations and evidence for fractional quantum Hall states in suspended bilayer and trilayer graphene

We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/V s. For bilayer devices, we observe conductance minima at all integer filling factors ν between 0 and -8, as well as a small plateau at ν=1/3. For trilayer devices, we observe features at ν=-1, -2, -3, and -4, and at ν～0.5 that persist to 4.5 K at B=8 T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau levels and fractional quantum Hall states.     

Landau-level interplay in InGaAs double quantum wells

Shubnikov–de Haas (SdH) and Hall measurements have been used to investigate a pair of adjacent two-dimensional electron gases (2DEGs) which were formed in two n_0.53Ga_0.47As quantum-wells, separated by a thin In_0.52Al_0.48As barrier, grown lattice-matched on InP. This double quantum-well system consists of two asymmetric InGaAs quantum wells, 9 nm and 7 nm respectively, separated by a 4.5 nm InAlAs barrier. The existence of two occupied electronic subbands with differing electron densities can clearly be identified by beating effects in the SdH oscillations. By applying a substrate bias the electron densities can be tuned and the beating is shifted. In the simultaneously performed Hall measurements additional features can be observed: Hall measurements with different total electron densities reveal plateaus for integer filling factors ν (with ν = ν₁ + ν₂, ν₁and ν₂both integers, corresponding to the two subbands). Some even filling factors become suppressed and recover with changing electron density. Also, for some densities an odd filling factor is observed. The systematic tuning of the electron densities via the application of a bias voltage to the front gate reveals two Landau fans, one for each electronic system, respectively, crossing each other. The electron densities for both electronic systems can be identified by analysing the SdH spectra. As a function of the front-gate voltage, these densities seem to show evidence for an anticrossing of the two electronic states and therefore for a strong coupling between the states.