Electronic structure calculations using dynamical mean field theory

The calculation of the electronic properties of materials is an important task of solid-state theory, albeit particularly difficult if electronic correlations are strong, e.g., in transition metals, their oxides and in f-electron systems. The standard approach to material calculations, the density functional theory in its local density approximation (LDA), incorporates electronic correlations only very rudimentarily and fails if the correlations are strong. Encouraged by the success of dynamical mean field theory (DMFT) in dealing with strongly correlated model Hamiltonians, physicists from the bandstructure and the many-body communities have joined forces and developed a combined LDA + DMFT method recently. Depending on the strength of electronic correlations, this new approach yields a weakly correlated metal as in the LDA, a strongly correlated metal or a Mott insulator. This approach is widely regarded as a breakthrough for electronic structure calculations of strongly correlated materials. We review this LDA + DMFT method and also discuss alternative approaches to employ DMFT in electronic structure calculations, e.g., by replacing the LDA part with the so-called GW approximation. Different methods to solve the DMFT equations are introduced with a focus on those that are suitable for realistic calculations with many orbitals. An overview of the successful application of LDA + DMFT to a wide variety of materials, ranging from Pu and Ce, to Fe and Ni, to numerous transition metal oxides, is given.     

铁基超导体多轨道模型中的电子关联与轨道选择

大部分铁基超导体的正常态呈现坏金属行为, 这表明体系中存在较强的电子关联效应. 最近的实验与理论研究显示, 铁基超导体中的电子关联具有多轨道的特征. 本文介绍与评论铁基超导体多轨道哈伯德模型中电子关联方面理论研究的最新进展; 着重讨论以隶自旋技术为代表的一系列量子多体计算方法在研究多轨道系统中金属绝缘体相变的应用. 理论计算给出了铁基超导体多轨道哈伯德模型基于电子关联的基态相图. 在对应母体化合物的电子填充数时, 基态存在从金属到绝缘体的莫特转变. 临近莫特转变, 体系呈现坏金属行为; 其电子性质存在较强的轨道选择性. 轨道选择性的强弱与体系中的洪德耦合和轨道的晶体场劈裂密切相关. 对钾铁硒系统, 研究发现其基态相图存在轨道选择莫特相: 其中铁的3d xy轨道已被莫特局域化, 但其他3d轨道电子仍具有巡游性. 这一新相的发现, 对理解以钾铁硒为代表的一大类铁基超导体正常态与超导之间的联系提供了重要线索.     

Quantum phase transition in the two-band hubbard model

The interaction between itinerant and Mott localized electronic states in strongly correlated materials is studied within dynamical mean field theory in combination with the numerical renormalization group method. A novel nonmagnetic zero temperature quantum phase transition is found in the bad-metallic orbital-selective Mott phase of the two-band Hubbard model, for values of the Hund's exchange which are relevant to typical transition metal oxides.     

Mott gap excitations and resonant inelastic x-ray scattering in doped cuprates

Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-T(c) cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.     

Quantum phases in a doped Mott insulator on the Shastry-Sutherland lattice

We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave resonating valence bond superconductors in which superconductivity is strongly enhanced by the emergence of spatially varying plaquette bond order.     

Imaging phase separation near the Mott boundary of the correlated organic superconductors kappa-(BEDT-TTF)2X

Electronic phase separation consisting of the metallic and insulating domains with 50-100 microm in diameter is found in the organic Mott system kappa-[(h8-BEDT-TTF)(1-x)(d8-BEDT-TTF)x]2Cu[N(CN)2]Br by means of scanning microregion infrared spectroscopy using the synchrotron radiation. The phase separation appears below the critical end temperature 35-40 K of the first-order Mott transition. The observation of the macroscopic size of the domains indicates a different class of the intrinsic electronic inhomogeneity from the nanoscale one reported in the inorganic Mott systems such as high-Tc copper and manganese oxides.     

Linear response calculations of lattice dynamics in strongly correlated systems

We introduce a new linear response method to study the lattice dynamics of materials with strong correlations. It is based on a combination of dynamical mean field theory of strongly correlated electrons and the local density functional theory of electronic structure. We apply the method to study the phonon dispersions of Mott insulators NiO and MnO in their paramagnetic insulating state not accessible by local density functionals. Our results are in good agreement with experiment.     

Cluster dynamical mean field theory of the Mott transition

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.     

Quench dynamics and nonequilibrium phase diagram of the bose-hubbard model

We investigate the time evolution of correlations in the Bose-Hubbard model following a quench from the superfluid to the Mott insulator. For large values of the final interaction strength the system approaches a distinctly nonequilibrium steady state that bears strong memory of the initial conditions. In contrast, when the final interaction strength is comparable to the hopping, the correlations are rather well approximated by those at thermal equilibrium. The existence of two distinct nonequilibrium regimes is surprising given the nonintegrability of the Bose-Hubbard model. We relate this phenomenon to the role of quasiparticle interactions in the Mott insulator.     

Disorder and pseudogap in strongly correlated systems: Phase diagram in the DMFT + Σ approach

The influence of disorder and pseudogap fluctuations on the Mott insulator-metal transition in strongly correlated systems has been studied in the framework of the generalized dynamic mean field theory (DMFT + Σ approach). Using the results of investigations of the density of states (DOS) and optical conductivity, a phase diagram (disorder-Hubbard interaction-temperature) is constructed for the paramagnetic Anderson-Hubbard model, which allows both the effects of strong electron correlations and the influence of strong disorder to be considered. Strong correlations are described using the DMFT, while a strong disorder is described using a generalized self-consistent theory of localization. The DOS and optical conductivity of the paramagnetic Hubbard model have been studied in a pseudogap state caused by antiferromagnetic spin (or charge) short-range order fluctuations with a finite correlation length, which have been modeled by a static Gaussian random field. The effect of a pseudogap on the Mott insulator-metal transition has been studied. It is established that, in both cases, the static Gaussian random field (related to the disorder or pseudogap fluctuations) leads to suppression of the Mott transition, broadening of the coexistence region of the insulator and metal phases, and an increase in the critical temperature at which the coexistence region disappears.     

Microscopic study of a spin-orbit-induced Mott insulator in Ir oxides

Motivated by recent experiments of a novel 5d Mott insulator in Sr2IrO4, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling λ. The variational Monte Carlo method is used to obtain the ground state phase diagram with varying an on-site Coulomb interaction U as well as λ. It is found that the transition from a paramagnetic metal to an antiferromagnetic insulator occurs at a finite U=U(MI), which is greatly reduced by a large λ, characteristic of 5d electrons, and leads to the "spin-orbit-induced" Mott insulator. It is also found that the Hund's coupling induces the anisotropic spin exchange and stabilizes the in-plane antiferromagnetic order. We have further studied the one-particle excitations by using the variational cluster approximation and revealed the internal electronic structure of this novel Mott insulator. These findings are in agreement with experimental observations on Sr2IrO4.     

Fragile Mott insulators

We prove that there exists a class of crystalline insulators, which we call "fragile Mott insulators," which are not adiabatically connected to any sort of band insulator provided time-reversal and certain point-group symmetries are respected, but which are otherwise unspectacular in that they exhibit no topological order nor any form of fractionalized quasiparticles. Different fragile Mott insulators are characterized by different nontrivial one-dimensional representations of the crystal point group. We illustrate this new type of insulators with two examples: the d Mott insulator discovered in the checkerboard Hubbard model at half-filling and the Affleck-Kennedy-Lieb-Tasaki insulator on the square lattice.     

Orbital-assisted metal-insulator transition in VO2

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.     

Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach

The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition. The text was submitted by the authors in English.     

Mott-insulator transition in a two-dimensional atomic Bose gas

Cold atoms in periodic potentials are versatile quantum systems for implementing simple models prevalent in condensed matter theory. Here we realize the 2D Bose-Hubbard model by loading a Bose-Einstein condensate into an optical lattice, and study the resulting Mott insulator. The measured momentum distributions agree quantitatively with theory (no adjustable parameters). In these systems, the Mott insulator forms in a spatially discrete shell structure which we probe by focusing on correlations in atom shot noise. These correlations show a marked dependence on the lattice depth, consistent with the changing size of the insulating shell expected from simple arguments.     

Calculated momentum dependence of Zhang-Rice states in transition metal oxides

Using a combination of local density functional theory and cluster exact diagonalization based dynamical mean field theory, we calculate many-body electronic structures of several Mott insulating oxides including undoped high T(c) materials. The dispersions of the lowest occupied electronic states are associated with the Zhang-Rice singlets in cuprates and with doublets, triplets, quadruplets, and quintets in more general cases. Our results agree with angle resolved photoemission experiments including the decrease of the spectral weight of the Zhang-Rice band as it approaches k=0.     

Mott transition in modulated lattices and parent insulator of (K,Tl)(y)Fe(x)Se(2) superconductors

The degree of electron correlations remains a central issue in the iron-based superconductors. The parent iron pnictides are antiferromagnetic, and their bad-metal behavior has been interpreted in terms of proximity to a Mott transition. We study such a transition in multiorbital models on modulated lattices containing an ordered pattern of iron vacancies, using a slave-rotor method. We show that the ordered vacancies lead to a band narrowing, which pushes the system to the Mott insulator side. This effect is proposed to underlie the insulating behavior observed in the parent compounds of the newly discovered (K,Tl)(y)Fe(x)Se(2) superconductors.     

A review of Monte Carlo simulations for the Bose–Hubbard model with diagonal disorder

We review the physics of the Bose–Hubbard model with disorder in the chemical potential focusing on recently published analytical arguments in combination with quantum Monte Carlo simulations. Apart from the superfluid and Mott insulator phases that can occur in this system without disorder, disorder allows for an additional phase, called the Bose glass phase. The topology of the phase diagram is subject to strong theorems proving that the Bose Glass phase must intervene between the superfluid and the Mott insulator and implying a Griffiths transition between the Mott insulator and the Bose glass. The full phase diagrams in 3d and 2d are discussed, and we zoom in on the insensitivity of the transition line between the superfluid and the Bose glass in the close vicinity of the tip of the Mott insulator lobe. We briefly comment on the established and remaining questions in the 1d case, and give a short overview of numerical work on related models.     

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.