共查询到18条相似文献,搜索用时 125 毫秒
1.
2.
3.
提出了一种具有部分超结(super junction, SJ)结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(VB)和比导通电阻(Ron-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2<
关键词:
SiC肖特基二极管
super junction
导通电阻
击穿电压 相似文献
4.
对制备的Ni/4H-SiC肖特基势垒二极管(SBD)进行了γ射线辐照试验,并在辐照过程中对器件分别加0和-30?V偏压.经过1?Mrad(Si)总剂量的γ射线辐照后,不同辐照偏压下的Ni/4H-SiC肖特基接触的势垒高度和理想因子没有退化,SiC外延层中的少子寿命也没有退化.辐照后器件的反向电流下降,这是由于器件表面的负界面电荷增加引起的.研究表明,辐照偏压对Ni/4H-SiC SBD的辐照退化效应没有明显的影响.
关键词:
碳化硅
肖特基
辐照效应
偏压 相似文献
5.
6.
在半导体器件高功率电磁脉冲效应数值模拟中,真实器件的物理模型构建较为困难。为了解决这一问题,以某型单向瞬态电压抑制(TVS)二极管为例,对其进行测试获取建模所需的参数信息。通过X光成像、扫描电子显微镜(SEM)及杂质染色等技术手段,获得了该器件PN结正对面积大小、PN结深度等结构参数。通过实验测量了二极管的反向击穿电压和电容曲线,结合数值计算,推导出了二极管的杂质浓度。利用本次实验获得的参数,结合数值计算的结果,建立了该型号二极管的真实半导体物理模型。对该模型进行了数值仿真,计算了器件的伏安响应曲线并与实验值进行了比对,计算结果与实验值吻合较好。本次的方法除了可以直接用于PN结型器件的建模外,也为其他器件物理模型的建立提供了参考,可在半导体器件效应数值模拟研究中得到应用。 相似文献
7.
准垂直GaN肖特基势垒二极管(SBD)因其低成本和高电流传输能力而备受关注.但其主要问题在于无法很好地估计器件的反向特性,从而影响二极管的设计.本文考虑了GaN材料的缺陷以及多种漏电机制,建立了复合漏电模型,对准垂直Ga N SBD的特性进行了模拟,仿真结果与实验结果吻合.基于此所提模型设计出具有高击穿电压的阶梯型场板结构准垂直GaN SBD.根据漏电流、温度和电场在反向电压下的相关性,分析了漏电机制和器件耐压特性,设计的阶梯型场板结构准垂直GaN SBD的Baliga优值BFOM达到73.81 MW/cm~2. 相似文献
8.
9.
为满足电力电子电路对功率开关二极管高频化的发展要求,提出了一种大功率低功耗快速软恢复p+(SiGeC)-n--n+异质结二极管.与常规的Si p-i-n二极管相比,在正向电流密度不超过1000 A/cm2情况下,p+(SiGeC)-n--n+二极管的正向压降减少了约1/5,有效降低了器件的通态功耗;反向恢复时间缩短了一半多,反向峰值电流降低了约25%,软
关键词:
快速软恢复
大功率低功耗
SiGeC/Si异质结功率二极管 相似文献
10.
运用器件模拟软件模拟了pn结6H-SiC紫外光探测器的光响应灵敏度特性.讨论了不同掺杂浓度、不同器件结深对响应灵敏度的影响.对于p+n结器件,当受光面为p+层,且厚度约为0.2μm、浓度约为9×10.18cm-3、n层浓度约为1×1 0.16cm-3时,器件有较大的响应灵敏度,R=167.2mA/W;当受光面为n+ 层 ,且厚度约为0.2μm、浓度约为9×10.18cm-3、p层浓度约为1×10.16cm-3时,器件有较大的响应灵敏度,R=183.5mA/W.通过比较可知,模型能较好地反应实际情况,与实验数据符合较好.
关键词:
6H-SiC
紫外光探测
吸收系数
光响应灵敏度 相似文献
11.
Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 × 10-5 A/cm2. 相似文献
12.
In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage. 相似文献
13.
Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
This paper investigates the behaviours of 4H--SiC merged
PiN Schottky (MPS) rectifiers with junction termination extension
(JTE) by extensive numerical simulations. The simulated results show
that the present model matches the experimental data very well. The
influences of the JTE design parameters such as the doping
concentration and length of the JTE on the breakdown characteristics
are discussed in detail. Then the temperature sensitivity of the
forward behaviour is studied in terms of the different designs of
4H--SiC MPS with JTE, which provides a particularly useful guideline
for the optimal design of MPS rectifiers with JTE. 相似文献
14.
Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom(without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench(mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm~2 are obtained from the fabricated diode with a 30-μm thick N~- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge. 相似文献
15.
This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. 相似文献
16.
Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length. 相似文献
17.
A.C. Mofor A. Bakin U. Chejarla E. Schlenker A. El-Shaer G. Wagner N. Boukos A. Travlos A. Waag 《Superlattices and Microstructures》2007,42(1-6):415
Due to the special properties of ZnO and numerous envisaged areas of application of its nanostructures, much effort has been made in fabricating ZnO nanostructures. The next challenging step seems to be the processing and hence realisation of devices based on the nanostructure. We have grown ZnO nanorods of high crystal quality and good optical properties on 6H-SiC and 4H-SiC substrates. Considering the p–n junction as a basis for electronic and optoelectronic devices, we realised ohmic contacts on p-type 4H-SiC and fabricated ZnO nanorod-based p–n heterojunctions with the p-type 4H-SiC serving as the hole-conducting region. Nanorod-based p–n diodes with a turn-on voltage of 1.8 V and relatively large reverse-bias breakdown voltage were obtained, thus suggesting both the possibility of ZnO nanorod-based ultraviolet photodetectors and light-emitting devices, and the miniaturisation of device scales. 相似文献
18.
Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes’ structures and electric properties
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
This paper stuides the structures of 4H-SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved. 相似文献