Self-induced 1-D molecular chain growth of thiophene on Ge(100)

The adsorption of thiophene on Ge(100) has been studied using scanning tunneling microscopy (STM), high-resolution core-level photoemission spectroscopy (HRPES), and density functional theory (DFT) calculations. Until now, thiophene is known to react with the Ge(100) dimer through a [4 + 2] cycloaddition reaction at room temperature, similar to the case of thiophene on Si(100). However, we found that thiophene has two adsorption geometries on Ge(100) at room temperature, such as a kinetically favorable Ge-S dative bonding configuration and a thermodynamically stable [4 + 2] cycloaddition adduct. Moreover, our STM results show that under 0.25 ML thiophene molecules preferentially produce one-dimensional molecular chain structures on Ge(100) via the Ge-S dative bonding configuration.     

Double dative bond configuration: pyrimidine on Ge(100)

The adsorption of pyrimidine onto Ge(100) surfaces has been investigated using real-time scanning tunneling microscopy (STM), temperature-programmed desorption (TPD), and density-functional theory (DFT) calculations. Our results show that the adsorbed pyrimidine molecules are tilted about 40 degrees with respect to the Ge surface, and through a Lewis acid-base reaction form bridges between the down-Ge atoms of neighboring Ge dimer rows by double Ge-N dative bonding without loss of aromaticity. For coverages of pyrimidine up to 0.25 ML, a well-ordered c(4x2) structure results from states that appear in STM micrographs as oval-shaped protrusions, which correspond to pyrimidine molecules datively adsorbed on every other dimer. However, above 0.25 ML, the oval-shaped protrusions gradually change into brighter zigzag lines. At 0.50 ML, a p(2x2) structure results from the states that appear in STM as zigzag lines. The zigzag lines are formed by the attachment of pyrimidine molecules to the down-Ge atoms of every Ge dimer. However, the unstable p(2x2) structure eventually reconstructs into a c(4x2) structure due to steric hindrance between the adsorbed pyrimidine molecules after stopping the exposure of pyrimidine to the surface.     

Chemical reactions and adsorption geometries of pyrrole on Ge(100)

The adsorption structures of pyrrole (C(4)H(5)N) on a Ge(100) surface at various coverages have been investigated with both scanning tunneling microscopy (STM) and ab initio density-functional theory (DFT) calculations. Three distinct features are observed in the STM images at low coverages. The comparison of the STM images with the simulation reveals that the most dominant flowerlike feature with a dark side is that the adsorbed pyrrole molecules with H dissociated form bridges between two down Ge atoms of neighboring Ge dimer rows through N-Ge bonding and beta-carbon-Ge interaction. The flowerlike feature without a dark side is also observed as a minority, which is identified as nearly the same structure as the most dominant one where a dissociated H is out of the feature. The third feature showing bright protrusions may be due to a C- and N-end-on (CN) configuration, where the pyrrole molecule is located on one dimer row. At higher coverages, the number of localized configurations increases.     

Effects of coverage and solvent on H2S adsorption on the Cu(100) surface: A DFT study

Density functional theory is used to investigate the effects of coverage and solvent on the adsorption of H₂S on the Cu(100) surface. In this work, the adsorption energies, structural parameters and Mulliken charges of the adsorbed H₂S are calculated. The results show that when the coverage of H₂S is high (1 ML), H₂S molecule cannot adsorb on the Cu(100) surface spontaneously, and the decomposition of H₂S preferentially occurs at the bridge site. When the coverage decreases to 1/4 ML coverage, H₂S molecule does not exhibit the decomposition, but bonds to the top Cu atom with the tilted adsorption. Furthermore, when the coverage is 1/9, 1/16 and 1/25 ML, H₂S adsorption remains stable. In addition, the stability of H₂S adsorption on the Cu(100) surface improves rapidly when the solvent dielectric constant (ε) increases from 1 to 12.3 corresponding to the vacuum and pyridine, respectively. For the higher ε (≥24.3), the effect of the solvent on the H₂S adsorption was greatly reduced. In this work, both coverage and solvent are shown to have an important effect on the H₂S adsorption on the Cu(100) surface, which might be useful to improve the future similar simulations. Copyright © 2015 John Wiley & Sons, Ltd.     

Study of adsorption and decomposition of H2O on Ge(100)

The adsorption and decomposition of water on Ge(100) have been investigated using real-time scanning tunneling microscopy (STM) and density-functional theory (DFT) calculations. The STM results revealed two distinct adsorption features of H2O on Ge(100) corresponding to molecular adsorption and H-OH dissociative adsorption. In the molecular adsorption geometry, H2O molecules are bound to the surface via Ge-O dative bonds between the O atom of H2O and the electrophilic down atom of the Ge dimer. In the dissociative adsorption geometry, the H2O molecule dissociates into H and OH, which bind covalently to a Ge-Ge dimer on Ge(100) in an H-Ge-Ge-OH configuration. The DFT calculations showed that the dissociative adsorption geometry is more stable than the molecular adsorption geometry. This finding is consistent with the STM results, which showed that the dissociative product becomes dominant as the H2O coverage is increased. The simulated STM images agreed very well with the experimental images. In the real-time STM experiments, we also observed a structural transformation of the H2O molecule from the molecular adsorption to the dissociative adsorption geometry.     

Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions

We have demonstrated the layer-by-layer growth, via a urea coupling reaction between two bifunctional molecules, ethylenediamine and 1,4-phenylene diisocyanate, to form an ultrathin film on Ge(100)-2 x 1 at room temperature under vacuum conditions. The initial adsorption and subsequent growth of each layer was studied with multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy. Ethylenediamine reacts with Ge(100)-2 x 1 to produce a surface-bound amine group which is available for additional reaction. Subsequent exposure of 1,4-phenylene diisocyanate leads to a spontaneous urea coupling reaction between the surface-bound amine and the highly reactive isocyanate functional group. Three bands at 1665, 1512, and 1306 cm(-)(1) are characteristic of a urea linkage and provide evidence of the coupling reaction. The coupling procedure can be repeated in a binary fashion to create covalently bound ultrathin films at room temperature, and in the present work, we demonstrate the successful growth of four layers. In addition, we have found that an initial exposure of 1,4-phenylene diisocyanate to Ge(100)-2 x 1 produces an isocyanate-functionalized surface which, upon exposure to ethylenediamine, also forms urea linkages. This layer-by-layer deposition method provides a strategy with which to design and produce precisely tailored organic materials at semiconductor interfaces.     

Organic functionalization of the Si (100) and Ge (100) surfaces by cycloadditions of carbenes and nitrenes: a theoretical prediction

By means of density functional theory (B3LYP/6-31G*) coupled with effective cluster models, we predict that the well-known cycloaddition reactions of carbenes and nitrenes to alkenes in organic chemistry can be employed as a new type of surface reaction to organically functionalize the Si (100) and Ge (100) surfaces at low temperature. The well-established abundance of carbenes and nitrenes addition chemistry in organic chemistry provides versatile flexibility of functionalizing the surfaces of Si (100) and Ge (100), which can potentially impart new organic functionalities to the semiconductors surface for novel applications in a diversity of fields. Our predictions strongly advance the concept of using organic reactions to modify the solid surface in a controlled manner and quite intriguing chemistry can lie in the material featuring the analogous bonding motif. In further perspective, implications for other theoretical work, regarding disilenes, digermenes, silenes, and germenes that all feature the bonding motif similar to alkenes, are also discussed.     

Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions

We have investigated the reaction of the bifunctional molecule ethylenediamine on Ge(100)-2 x 1 using multiple internal reflection Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations. Ethylenediamine exhibits different adsorption behavior than simple methylamines on the Ge(100)-2 x 1 surface. At low coverages, ethylenediamine undergoes dissociative chemisorption via an interdimer dual N-H dissociation reaction. As coverage increases, the N-H dissociation reaction is inhibited and formation of a Ge-N dative-bonded structure dominates.     

Low temperature adsorption of oxygen on Ni(100)

LEED, AES and data indicate the nonreconstructive character of oxygen adsorption on Ni(100) at 170 K and reconstructive chemisorption at T>270 K with the formation of a c(2×2)0 structure.

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, , Ni (100) 170 >270 (2×2)0.

     

Morphological evolution of Ge islands on the Si(100) surface: from huts to pits

The morphological evolution on the size and shape of Ge island on the Si(100) surface by depositing and subsequent annealing processes is studied in situ by using scanning tunneling microscopy at ultrahigh vacuum environment. A slower growth rate is maintained when the islands grow to larger sizes beyond the wetting layers. While at room temperature, the epitaxial strain is relieved by the formation of three‐dimensional islands (so‐called ‘hut’ clusters). When the sample is annealed at 200 °C, the strain is relieved by forming pits, having the circular cone shape but with their apex pointing down, with Ge clusters formed at the rim of pits. Copyright © 2016 John Wiley & Sons, Ltd.     

A theoretical study of hydrogen surface coverage over Ni(100)

We have used the MINDO/SR molecular orbital method in order to model the migration of hydrogen atoms over a Ni(100) surface. The present calculations indicate the existence of two different states for adsorbed hydrogen, a result which is in agreement with experimental thermal desorption data and LEED . A detailed analysis of the electronic factors involved in this process is presented.     

噻吩在Ni(100),Cu(100),Co(100)表面吸附的密度泛函研究

采用密度泛函理论对噻吩分子在Ni(100),Cu(100)和Co(100)表面的吸附构型进行了GGA/PBE水平上的计算,通过比较吸附能及各结构参数,预测了各金属的脱硫活性.结果表明:噻吩在Ni表面发生了作用力较强的化学吸附,噻吩的S—C键有解离趋势;在Cu表面发生的是作用力较弱的物理吸附,噻吩分子构型并未发生较大变化;而噻吩在Co表面的吸附作用最强,噻吩的S—C键已经发生解离,和Co原子之间的距离已经达到甚至短于Co—S键的键长.这说明,金属的吸附脱硫活性为CoNiCu,与实验研究结果一致.此3种金属最稳定的分子吸附位均为hol45位.     

Coverage‐Dependent Variation of Adsorption Configurations of Methionine on Ge(100)

The adsorption configurations of methionine molecules on the Ge(100) surface have been studied by using DFT calculations, core‐level photoemission spectroscopy (CLPES), and low‐energy electron diffraction (LEED) to scrutinize the adsorption structure as a function of coverage. At first, we obtained two important and stable structures. One is the most stable structure between these structures described as an “O H dissociated‐N dative‐S dative‐bonded structure” and the other is a less stable adsorption structure of these indicating an “O H dissociated‐S dative‐bonded structure” by using DFT calculations. We also performed CLPES to clarify our DFT calculation results. Through the spectral analysis of the S 2p, C 1s, N 1s, and O 1s core‐level spectra, we acquired the reasonable results that also revealed quite different bonding configurations depending on the methionine coverage. At low coverage (ca. 0.30 ML), a single type of sulfur and charged nitrogen peaks, which indicate an “O H dissociated‐N dative‐S dative‐bonded structure”, were observed. On the other hand, two types of sulfur peaks with thiol formation and two nitrogen peaks with neutralized and charged characteristics were monitored at a higher coverage (0.60 ML and above), which can be described as an “O H dissociated‐S dative‐bonded structure”. Hence, we can clearly demonstrate that our results obtained from CLPES spectra and DFT calculations are matched well with each other. Moreover, we additionally confirmed that the relative population of the two types of thiols and amines being included in methionine in between half monolayer induces a surface reorientation in the ordering from 2×1 to 1×1 employing LEED. This interesting variation of the methionine adsorbed on the Ge(100) surface by coverage dependence will be precisely discussed by using DFT calculations, CLPES, and LEED.     

Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1

A combined experimental and theoretical study of a model system of multifunctional unsaturated ketones, including ethyl vinyl ketone (EVK), 2-cyclohexen-1-one, and 5-hexen-2-one, on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces was performed in order to probe the factors controlling the competition and selectivity of organic reactions on clean semiconductor surfaces. Multiple internal reflection infrared spectroscopy data and density functional theory calculations indicate that EVK and 2-cyclohexen-1-one undergo selective [4 + 2] hetero-Diels-Alder and [4 + 2] trans cycloaddition reactions on the Ge(100)-2 x 1 surface at room temperature. In contrast, on the Si(100)-2 x 1 surface, evidence is seen for significant ene and possibly [2 + 2] C=O cycloaddition side products. The greater selectivity of these compounds on Ge(100) versus Si(100) is explained by differences between the two surfaces in both thermodynamic factors and kinetic factors. With 5-hexen-2-one, for which [4 + 2] cycloaddition is not possible, a small [2 + 2] C=C cycloaddition product is observed on Ge(100) and possibly Si(100), even though the [2 + 2] C=C transition state is calculated to be the highest barrier reaction by several kilocalories per mole. The results suggest that, due to the high reactivity of clean semiconductor surfaces, thermodynamic selectivity and control will play important roles in their selective functionalization, favoring the use of Ge for selective attachment of multifunctional organics.     

Germanium(II) pseudohalides: Ge(CN)2, Ge(NCO)2 and Ge(NCS)2; syntheses and reactivities

The hitherto unknown germanium(II) pseudohalides: Ge(CN)₂, Ge(NCO)₂ and Ge(NCS)₂, have been prepared by reactions of germanium(II) halides with corresponding silver or potassium salts; they are stable in tetrahydrofuran or acetone solution in which they are extremely sensitive to moisture, and they undergo cycloaddition, insertion, and Lewis acid-base reactions characteristic of highly reactive germylenes. Infrared spectra indicate that in tetrahydrofuran solution Ge(CN)₂ is the normal cyanide, whereas Ge(NCO)₂ and Ge(NCS)₂ are the isocyanate and isothiocyanate, respectively.     

Effect of synthesis temperature and doping level on conductivity and structure of poly(3-methyl thiophene)

Poly(3-methyl thiophene) was synthesized by oxidative chemical polymerization technique using ferric chloride as the dopant in an inert atmosphere. Samples of different doping levels were prepared and analyzed by Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy, and direct current (DC) conductivity measurement at room temperature (300 K). Synthesis of the polymer was confirmed by FTIR studies. FTIR spectra showed a shift in the heterocyclic bands in the region of 700-1200 cm(-1) with a decrease in synthesis temperature. It was evident from the scanning electron micrographs that the surface structure of the polymer became denser with an increase in doping level. The measured DC conductivity increased initially up to the doping level of 0.8 M and then this increase tended to slow down. Samples having a doping level of 0.4 M were synthesized at 300, 280, and 270 K while maintaining the other synthesis parameters. The conductivity and yield were found to increase as the temperature of the polymerization decreased.     

Effects of toluene on thiophene adsorption over NaY and Ce(IV)Y zeolites

Zeolites NaY and Ce(IV)Y were employed as adsorbents to remove organic sulfur compounds from model gasoline(MG) solutions with and without toluene in static adsorption experiments at room temperature(RT) and atmospheric pressure.The adsorbents were characterized by XRD,XRF and pyridine infrared spectrum(IR).The adsorption experiments show that the desulfurization performance of Ce(IV)Y is much better than that of NaY.The sulfur removal over both NaY and Ce(IV)Y decreases with the increase of toluene concentration in MG,however,the decline tendency on Ce(IV)Y is smooth,and it is steep on NaY.FT-IR spectra of thiophene adsorption indicate that thiophene molecules are mainly adsorbed on NaY via π electron interaction,but on Ce(IV)Y,in addition to the π electron interaction,both Ce4+-S direct interaction and protonation of thiophene also play important roles.Toluene molecules are adsorbed on NaY also via π electron interaction.Although the amount of Brnsted acid sites is increased due to the introduction of Ce4+ ions into NaY zeolite,it is not found to influence the adsorption mode of toluene over Ce(IV)Y.Compared with NaY zeolite,the improved desulfurization performance over Ce(IV)Y for removing organic sulfur compounds from MG solution,especially those containing large amount of aromatics,may be ascribed to the direct Ce(IV)-S interaction,which is much resistant to the influence resulted from toluene adsorption.     

Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

The direct reaction of trimethylaluminum (TMA) on a Ge(100) surface and the effects of monolayer H(2)O pre-dosing were investigated using ultrahigh vacuum techniques, such as scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT). At room temperature (RT), a saturation TMA dose produced 0.8 monolayers (ML) of semi-ordered species on a Ge(100) surface due to the dissociative chemisorption of TMA. STS confirmed the chemisorption of TMA passivated the bandgap states due to dangling bonds. By annealing the TMA-dosed Ge surface, the STM observed coverage of TMA sites decreased to 0.4 ML at 250?°C, and to 0.15 ML at 450?°C. XPS analysis showed that only carbon content was reduced during annealing, while the Al coverage was maintained at 0.15 ML, consistent with the desorption of methyl (-CH(3)) groups from the TMA adsorbates. Conversely, saturation TMA dosing at RT on the monolayer H(2)O pre-dosed Ge(100) surface followed by annealing at 200?°C formed a layer of Ge-O-Al bonds with an Al coverage a factor of two greater than the TMA only dosed Ge(100), consistent with Ge-OH activation of TMA chemisorption and Ge-H blocking of CH(3) chemisorption. The DFT shows that the reaction of TMA has lower activation energy and is more exothermic on Ge-OH than Ge-H sites. It is proposed that the H(2)O pre-dosing enhances the concentration of adsorbed Al and forms thermally stable Ge-O-Al bonds along the Ge dimer row which could serve as a nearly ideal atomic layer deposition nucleation layer on Ge(100) surface.     

Initial nitridation of the Ge(100)-2 x 1 surface by ammonia

The reaction of ammonia (NH(3)) on the Ge(100)-2 x 1 surface is investigated using density functional theory (DFT). We find that NH(3) adsorbs molecularly onto Ge(100)-2 x 1 via the formation of a dative bond. The calculations also show that, unlike Si(100)-2 x 1, the activation barrier for subsequent dissociation of NH(3) adsorbed on Ge(100)-2 x 1 is higher than that of reversible desorption, which indicates that NH(3) has a low reactive sticking probability on the Ge(100)-2 x 1 surface. We also predict that nitrogen insertion into the Ge-Ge dimer requires NH(3) overexposure because the activation barrier for NH(2) insertion into the Ge-Ge dimer is significantly above the entrance channel. The nitridation reaction pathway results in the N-H bridge-bonded state, which is found to be 17.4 kcal/mol more stable than the reactants. We find that the reactions of NH(3) on the Ge(100)-2 x 1 surface generally involve higher activation barriers and less stable intermediates than the analogous reactions on the Si(100)-2 x 1 surface.