Experimental study of annular bright field (ABF) imaging using aberration-corrected scanning transmission electron microscopy (STEM)

Experimental parameters used in the annular bright field (ABF) imaging method were tested using images simulated with the multislice method. Images simulated under identical conditions were found to agree well with experimental images. The ABF technique was shown to be relatively insensitive to the sample thickness and the defocus. In experimental ABF images, atomic columns exhibited dark contrast over a wide range of specimen thickness and defocus values, from 10 to 70 nm and ?20 to +20 nm, respectively. A series of diffraction patterns at atomic columns, obtained using the diffraction imaging method, exhibited higher intensities in their central regions (0–11 mrad) for light elements and in their peripheral regions (11–22 mrad) for heavy elements. The results indicated that the contrast of light elements is enhanced by subtraction of the central region of the transmitted beam, since this is blocked by a circular mask in the ABF-STEM technique. Thus, the overall contrast of light elements is greatly improved, allowing them to be clearly visualized.     

Rapid surface roughness measurements of silicone thin films with different thicknesses

A rapid optical measurement system for rapid surface roughness measurement of polycrystalline silicon (poly-Si) thin films was developed in this study. Two kinds of thickness of poly-Si thin films were used to study rapid surface roughness measurements. Six different incident angles were employed for measuring the surface roughness of poly-Si thin films. The results reveal that the incident angle of 20° was found to be a good candidate for measuring the surface roughness of poly-Si thin films. Surface roughness (y) of poly-Si thin films can be determined rapidly from the average value of reflected peak power density (x) measured by the optical system developed using the trend equation of y = ?0.1876x + 1.4067. The maximum measurement error rate of the optical measurement system developed was less than 8.61%. The savings in measurement time of the surface roughness of poly-Si thin films was up to 83%.     

Spectroscopic ellipsometry measurements on an anisotropic crystal: 6H-SiC

In spectroscopic ellipsometry (SE) measurement, accuracy of optic axis orientation is very important requirement. To reduce the error arising from the uncertainty in optic axis orientation, we applied multiple angles SE measurement performed on 6H-SiC with the optical axis perpendicular to the sample (0 0 0 1) surface in the 300–800 nm wavelength range at room temperature. The refractive indices and extinction coefficients for ordinary and extraordinary were both fitted by Cauchy dispersion model. The obtained results were of great agreement with literatures.     

Stabilization of high spin FCC Fe in (Fe/Pd)n multilayers

Polycrystalline (Fe/Pd)_n multilayers are grown onto sapphire substrates at room temperature in a UHV system. The number of periods n=40 and the thickness of Pd layers of t_Pd=4 nm are kept constant, whereas the thickness of the Fe layers is varied from 1.5 to 5 nm. Structural properties are studied by in situ reflection high energy diffraction (RHEED), scanning tunnelling microscopy (STM) and ex situ by X-ray diffraction at small angles and large angles. Analyzing the experimental data using the program SUPREX we obtain interplanar distances of d_Fe=2.03±0.01 Å for an Fe layer thickness larger than about 2.5 nm as expected for (1 1 0) planes of BCC Fe. For Fe layers with thicknesses less than about 2.5 nm the interplanar distance is d_Fe=2.1±0.01 Å, which is close to the distance between (1 1 1) planes of FCC Fe with a lattice parameter of a=3.64 Å. Magnetic susceptibility measurements at temperatures between 1.5 and 300 K for (Fe/Pd)_n multilayers with FCC Fe yield a magnetic moment per Fe atom of μ=2.7±0.1 μ_B, which is about 20% larger compared to μ=2.2 μ_B for BCC Fe. We show that the occurrence of the large magnetic moment originates from FCC Fe being in the high spin (HS) state rather than from polarization effects of Pd at Fe/Pd interfaces.     

New superhard carbon phases between graphite and diamond

Two new carbon allotropes (H-carbon and S-carbon) are proposed, as possible candidates for the intermediate superhard phases between graphite and diamond obtained in the process of cold compressing graphite, based on the results of first-principles calculations. Both H-carbon and S-carbon are more stable than previously proposed M-carbon and W-carbon and their bulk modulus are comparable to that of diamond. H-carbon is an indirect-band-gap semiconductor with a gap of 4.459 eV and S-carbon is a direct-band-gap semiconductor with a gap of 4.343 eV. The transition pressure from cold compressing graphite is 10.08 GPa and 5.93 GPa for H-carbon and S-carbon, respectively, which is in consistent with the recent experimental report.     

A thin film magnetic field sensor of sub-pT resolution and magnetocardiogram (MCG) measurement at room temperature

We developed a very sensitive high-frequency carrier-type thin film sensor with a sub-pT resolution using a transmission line. The sensor element consists of Cu conductor with a meander pattern (20 mm in length, 0.8 mm in width, and 18 μm in thickness), a ground plane, and amorphous CoNbZr film (4 μm in thickness). The amplitude modulation technique was employed to enhance the magnetic field resolution for measurement of the high-frequency field (499 kHz), a resolution of 7.10×10^?13 T/Hz^1/2 being achieved, when we applied an AC magnetic field at 499 kHz. The phase detection technique was applied for measurement of the low frequency field (around 1 Hz). A small phase change was detected using a dual mixer time difference method. A high phase change of 130°/Oe was observed. A magnetic field resolution of 1.35×10^?12 T/Hz^1/2 was obtained when a small AC field at 1 Hz was applied. We applied the sensor for magnetocardiogram (MCG) measurement using the phase detection technique. We succeeded in measuring the MCG signal including typical QRS and T waves, and compared the MCG with a simultaneously obtained conventional electrocardiogram (ECG) signal.     

Texture and strain in CoPt/Ag nanocomposite films

The texture and microstrain in CoPt/Ag nanocomposite films is monitored as a function of film thickness. Perpendicular anisotropy due to (0 0 1) texturing is achieved by annealing films with thickness below 15 nm at 600°C. As a function of film thickness δ the texture evolves from weak (0 0 1) below 9 nm to strong (0 0 1) at δ=12 nm which deteriorates rapidly above 15 nm and evolves to (1 1 1) above 40 nm. The strain is minimized in the range of film thickness where the (0 0 1) texturing is optimum indicating a texturing mechanism related to the reduction of mechanical strain energy.     

Phase stepping methods based on PTDC for Fiber-Optic Projected-Fringe Digital Interferometry

Active homodyne control can be used to stabilize; π/2-rad phase steps in a Fiber-Optic Projected-Fringe Digital Interferometry. Two beams emitted from a fiber-optic coupler are combined to form an interference fringe pattern on a diffusely reflecting object. Fresnel reflections from the distal fiber ends undergo a double pass in the fibers and interference at the fourth port of the coupler which formed a Michelson interferometer. We suggested a method of PTDC (DC phase tracking) to maintain the interference intensity at quadrature by feedback control. Stepping between quadrature positions force a π/2-rad phase step. A method based on the ratio of harmonic of the interference signal is proposed to estimate phase step accuracy .A root-mean-square phase stability of 2 mrad and phase step accuracy of 13.8 mrad were measured with PTDC for the Fiber-Optic Projected-Fringe Digital Interferometry. It worked well in 2 h without resetting the integrator.     

Graphene on SiC(0001) and SiC(0001̅) surfaces grown via Ni-silicidation reactions

This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001?) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni₂Si(0001)-layer grows epitaxially on SiC(0001?) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001?) and SiC(0001) surfaces with an areal occupation ratio of ～ 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001?) and SiC(0001), respectively. The dispersion curve of the π band for the double-layer graphite (DG) on the Si-face lies about 1 eV above that of the single-layer graphite (SG) on the C-face around the Γ-point. The work functions of the SG/SiC(0001?) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.     

The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(3 1 1)B substrate

We fabricated multiple stacked self-organized InGaAs quantum dots (QDs) on GaAs (3 1 1)B substrate by atomic hydrogen-assisted molecular beam epitaxy (H-MBE) to realize an ordered three-dimensional QD array. High quality stacked QDs with good size uniformity were achieved by using strain-compensation growth technique, in which each In_0.35Ga_0.65As QD layer was embedded by GaNAs strain-compensation layer (SCL). In order to investigate the effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs QDs, the thickness of GaNAs SCL was varied from 40 to 20 nm. We observed that QDs were vertically aligned in [3 1 1] direction when viewed along [0 1 −1], while the alignment was inclined when viewed along [−2 3 3] for all samples with different SCL thickness. This is due to their asymmetric shape along [−2 3 3] with two different dominant facets thereby the local strain field around QD extends further outward from the lower-angle facet. Furthermore, the inclination angle of vertical alignment QDs became monotonously smaller from 22° to 2° with decreasing SCL thickness from 40 to 20 nm. These results suggest that the strain field extends asymmetrically resulting in vertically tilted alignment of QDs for samples with thick SCLs, while the propagated local strain field is strong enough to generate the nucleation site of QD formation just above lower QD in the sample with thinner SCLs.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Porous carbon-coated graphite electrodes for energy production from salinity gradient using reverse electrodialysis

Performance of graphite foil electrodes coated by porous carbon black (i.e., Vulcan) was investigated in comparison with metal electrodes for reverse electrodialysis (RED) application. The electrode slurry that was used for fabrication of the porous carbon-coated graphite foil is composed of 7.2 wt% of carbon black (Vulcan X-72), 0.8 wt% of a polymer binder (polyvinylidene fluoride, PVdF), and 92.0 wt% of a mixing solvent (dimethylacetamide, DMAc). Cyclic voltammograms of both the porous carbon (i.e., Vulcan)-coated graphite foil electrode and the graphite foil electrode without Vulcan showed good reversibility in the hexacyanoferrate(III) (i.e., Fe(CN)₆³⁻) and hexacyanoferrate(II) (i.e., Fe(CN)₆⁴⁻) redox couple and 1 M Na₂SO₄ at room temperature. However, anodic and cathodic current of the Vulcan-coated graphite foil electrode was much higher than those of the graphite foil electrode. Using a bench-scale RED stack, the current–voltage polarization curve of the Vulcan-coated graphite electrode was compared to that of metal electrodes such as iridium (Ir) and platinum (Pt). From the results, it was confirmed that resistance of four different electrodes increased with the following order: the Vulcan-coated graphite foil<the Ir-coated titanium (Ti) mesh<the Pt-coated Ti plate<the graphite foil. Moreover, the Vulcan-coated graphite foil showed 5–10% higher power density than the metal mesh electrodes. From the polarization curve of the Vulcan-coated graphite foil electrode, it was found that total resistance decreased as thickness and geometric surface area of the electrode increased.     

The investigation of transport properties of mesoscopic graphite in high magnetic field

The electrical transport properties of mesoscopic graphite have been investigated in a gate voltage configuration. Few layer graphene structures made from Kish graphite exhibit Shubnikov-de Haas (SdH) oscillations in magnetic fields up to 33 T, with a strong gate voltage dependence. A two band model can be used to explain the linear dependence of the SdH frequency on the gate voltage. The temperature dependence of the SdH oscillation amplitude allows the determination of the effective masses of the carriers, which remain comparable between mesoscopic and bulk graphite samples. However, mesoscopic graphite thinner than 130 nm does not exhibit the field induced charge density wave transition seen in bulk samples above 25 T at low temperatures.     

Spontaneous formation of size-selected bimetallic nanoparticle arrays

An original physical route is proposed to organize size-selected bimetallic nanoparticles on graphite surfaces. This approach is based on the soft landing of preformed clusters and is demonstrated for bimetallic Au_xPt_1 ? x clusters of different compositions. Particle coalescence is avoided thanks to cluster surface reactivity, leading to a self-assembly with a well-defined inter-particle separation (~ 1 nm).     

Optical fiber sensor for temperature measurement based on Silicon thermo-optics effect

A temperature sensor based on the thermo-optics effect of single crystal silicon diaphragm was proposed and studied. The temperature measurement mechanism by using single crystal silicon diaphragm was theoretically analyzed and found the relation between temperature measurement range and the thickness of single crystal diaphragm. It was found that when the temperature changed from 20 °C to 48 °C, the reflected resonant peak wavelength was shifted which was detected by using the dual-wavelength signal demodulation method. Experimental results for temperature measurement demonstrated reasonable linearity and repeatability, related linear regression coefficient of the experimental result is 99.94%. The study would be of utility value for the design and fabrication of silicon-based sensors which were used to measure pressure or the other physical quantities.     

Tunable characteristics of one dimensional magnetic photonic crystal composed with single-negative materials

In this paper, we present the study of dispersion and transmittance characteristics of one dimensional magnetic photonic crystal composed by single negative indexed materials. For this structure, we have considered magnetic negative (MNG) with ? = 1 and μ < 0 and electric negative (ENG) with ? < 0 and μ = 4. We used simple transfer matrix method and Bloch's theorem for its analytical explanations. Analyzing transmittance characteristics of the proposed structure, we obtain the tunneling of certain frequency range where as the dispersion characteristic shows total forbidden for the same range for TM mode. The tunable property is found inside the band structure due to zero-?, zero-μ and magnetic behavior of the material. To identify zero-? and zero-μ of the structure, we have calculated the dispersion and the transmittance of the magnetic structure of MNG–ENG on different angles of incidence and thickness of layers.     

Ohmic contact and space-charge-limited current in molybdenum oxide modified devices

The effect of indium-tin oxide (ITO) surface treatment on hole injection of devices with molybdenum oxide (MoO₃) as a buffer layer on ITO was studied. The Ohmic contact is formed at the metal/organic interface due to high work function of MoO₃. Hence, the current is due to space charge limited when ITO is positively biased. The hole mobility of N, N′-bis-(1-napthyl)-N, N′-diphenyl-1, 1′biphenyl-4, 4′-diamine (NPB) at various thicknesses (100–400 nm) has been estimated by using space-charge-limited current measurements. The hole mobility of NPB, 1.09×10⁻⁵ cm²/V s at 100 nm is smaller than the value of 1.52×10⁻⁴ cm²/V s at 400 nm at 0.8 MV/cm, which is caused by the interfacial trap states restricted by the surface interaction. The mobility is hardly changed with NPB thickness for the effect of interfacial trap states on mobility which can be negligible when the thickness is more than 300 nm.     

Preparation of carbon nanoparticles from electrolysis of molten carbonates and use as anode materials in lithium-ion batteries

The electrochemical reduction of molten Li–Na–K carbonates at 450 °C provides “quasi-spherical” carbon nanoparticles with size comprised between 40 and 80 nm (deduced from AFM measurements). XRD analyses performed after washing and heat-treatment at various temperatures have revealed the presence of graphitised and amorphous phases. The d₀₀₂ values were close to the ideal one obtained for pure graphite. Raman spectroscopy has pointed out surface disordering which increases with increasing temperature of the heat-treatment. The presence of Na and Li on the surface of the carbon powder has been evidenced by SIMS. The maximum Na and Li contents were observed for carbon samples heat-treated at 400 °C. Their electrochemical performances vs. the insertion/deinsertion of lithium cations were studied in 1 M LiPF₆–EC : DEC : DMC (2 : 1 : 2). The first charge–discharge cycle is characterised by a high irreversible capacity as in the case of hard-disordered carbon materials. However, the potential profile in galvanostatic mode is intermediate between that usually observed for graphite and amorphous carbon: rather continuous charge–discharge curves sloping between 1.5 and 0.3 V vs. Li / Li⁺, and successive phase transformations between 0.3 and 0.02 V vs. Li / Li⁺. The best electrochemical performances were obtained with carbon powders heat-treated at 400 °C which exhibits a reversible capacity value of 1080 mAh g^− 1 (composition of Li_2.9C₆). This sample has also both the lowest surface disordering (deduced from Raman spectroscopy), and the highest Na and Li surface contents (deduced from SIMS).     

In situ magneto-optical Kerr effect study of uncovered Fe films on ZnSe(0 0 1)

The magnetic properties of uncovered Fe/ZnSe/GaAs(1 0 0) ultrathin films have been determined in situ by magneto-optical Kerr effect (MOKE). Fe films up to 10 monolayers (ML) thick were deposited on c(2×2) Zn-rich ZnSe/GaAs(0 0 1) surfaces at 180 °C. We have studied the thickness dependence of the in-plane lattice parameter of the Fe films and of the MOKE hysteresis loops in the longitudinal geometry, at 150 K, under magnetic fields up to 0.1 T applied along the [1 1 0] and [1-1 0] directions of the ZnSe(0 0 1). Reflection high energy electron diffraction show that in the low thickness regime the Fe films present an in-plane structural anisotropy characterized by an expansion along the [1 1 0] direction. Hysteretic loops were obtained only starting from ∼5 ML Fe. We found the onset of an uniaxial magnetic anisotropy with [1 1 0] magnetic easy axis at 7 ML Fe.     

Ultrasound-assisted preparation of alkaline graphite intercalation compounds

Alkaline graphite intercalation compounds were prepared by flake graphite, potassium dichromate, concentrated sulfur acid and sodium hydroxide under ultrasound irradiation and characterized by scanning electron microscopy and X-ray diffraction. The influences of solution alkalinity, bath temperature and reaction time on the expansion volume were also investigated. The results show that alkaline graphite intercalation compounds were prepared when ${\text{SO}}_4^{2-}$ and OH^? ions were inserted into the spaces between the graphene planes, producing a flake morphology and multilevel structure. At the same time that the interlayer volume expanded, the oxidizing ability of the solid increased. When the bath temperature, the reaction time and the solution alkalinity were at 33–36 °C, at 60 min and for pH = 13, the top expansion volume was 35 mL g^?1.