Zur Realstruktur von Ga1–xInxAs LPE-Schichten

Ga_1–xIn_xAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 10⁵ cm⁻² and 3 · 10⁷ cm⁻² and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers.     

Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

The room temperature epitaxial growth of CeO₂ on lattice matched (001) LaAlO₃ substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po₂) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO₂ can be achieved at room temperature under Po₂ less than 2 × 10⁻³ Torr. The best quality of grown film is obtained under Po₂ = 2 × 10⁻⁵ Torr and degraded under Po₂ = 2 × 10⁻⁶ Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO₂ and LAO is confirmed to be (001)CeO₂ //(001)LAO, [100]_CeO2//[110]_LAO and [010]_CeO2//[10]_LAO. No obvious reduction reaction occurred, from Ce⁺⁴ turned into Ce⁺³ states, as reducing oxygen partial pressure during growth by PLD.     

Scandium thin films-structure and electrical resistance (I). A study on films obtained in a vacuum of 10−5 up to 10−6 Torr

A structure as well as a specific electrical resistance of scandium films having a various thickness (300 up to 2800 Å) obtained at a condensation rate: w⋍ 1 up to 155 Å/s have been studied in the present work. Depending on condensation conditions in films a hydride ScH_x, h.c.p. — Sc, or ScH_x + Sc alternatively, is formed, a phase containing a distorted hexagonal lattice evolving into the ScH_x over a period of a few hours. The ScH_x and h.c.p-Sc change to Sc₂O₃ when annealed in a vacuum of 5 · 10⁻⁵ Torr at a T ≈ 800°C, while in a vacuum of 3 · 10⁻⁸ Torr a change to h.c.p.-Sc with negligible inclusions of oxidic Sc₂O₃ particles takes place. Formation of oxide is observed also when heating the films with an electron beam directly in a microscope under vacuum of ∼ 8 · 10⁻⁵ Torr. The specific electrical resistance ϱ of the film just after a condensation has taken place is approximatly by an order higher as against the ScH_x- and h.c.p.-Sc solid specimens. An irreversible gain in said resistance is observed while holding at a room temperature or annealing in a vacuum of 5 · 10⁻⁵ Torr, this being associated with absorption of H₂, O₂ and, possibly, of water steam, and then with formation of Sc₂O₃. Annealing in a vacuum of 5 · 10⁻⁸ up to 10⁻⁷ Torr involves a temperature relationship for ϱ of an intricated nature, this being accounted for by a structure transition as follows: A diode-effect diminishing with a temperature rise is observed in annealed films.     

Funktionelle Abhängigkeiten der Gleichgewichtsverteilungskoeffizienten in Molybdän

From the deeper investigation of the periodicity of the equilibrium distribution coefficient in molybdenum comes out that k_c values of admixtures (transition metals) in Mo depend on three factors of influence: a) the valence factor (the number of valence electrons), b) the dimension factor (the real or hypotetical melting point of the admixture phase, which is the same as that one of the basic metal Mo—KSC.) From this dependence it is possible to predict the value k_o of the elements in molybdenum, the diagrams of which are not known or inexact.     

Structure and electrical resistance of thin scandium films (III). Study on electrical properties

The specific resistance-thickness of ScH_x (vacuum 10⁻⁵ to 5 · 10⁻⁶ Torr) and Sc films (vacuum 1 · 10⁻⁸ to 3 · 10⁻⁸ Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory FUCHS -SONDHEIMER (ScH_x, Sc) and MAYADAS -SHATZKES (Sc) assuming a diffuse scattering of the carriers (P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å (T ⋍ 300 K) for ScH_x and 400 Å with grain-boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10⁻⁹ Torr.     

Elektronenmikroskopische Untersuchungen zur Oxidkeimbildung an Reineisenoberflächen

During a high temperature treatment of pure α-iron crystals under vacuum conditions (po₂ = 1 · 10⁻⁴ … 1 · 10⁻⁶ torr) single oxide nuclei originate on the crystal surfaces. The oxide was identified as γ-Fe₂O₃. From the definite shape of the nuclei on (100) oriented α-iron and from their orientations relative to the iron lattice an epitaxial growth may be concluded, following the well-known relation (100)_Fe ∥ (100)_Oxide; [100]_Fe ∥ [110]_oxide. Grown-in dislocations, surface steps and grain boundaries of the matrix were decorated by the oxide nuclei. However, oxide nuclei did not originate at the emergent points of fresh dislocations.     

Crystal Structure of pyridinium isopolymolybdate (C5H6N)2n[Mo4O13]n

Synthesis and crystal structure are described for pyridinium isopolymolybdate of chemical composition (C₅H₆N)_2n[Mo₄O₁₃]_n. The crystals are triclinic, space group P1, with the following unit‐cell parameters: a =8.2695(11) Å, b =10.544(4) Å, c =11.177(4) Å, α = 71.76(5)°, β = 89.68(3)°, γ = 78.79(3)°, V =906.4(4) ų, Z = 2 (chemical formula (C₅H₆N)₂[Mo₄O₁₃]), D _calcd = 2.755 g·cm^–3. Crystal structure was solved by Patterson methods and refined to a final R value 0.085 for 4045 independent reflections. The studied compound, considered in analogy to triclinic (NH₄)₂Mo₄O₁₃ as pyridinium polyoctamolybdate, is proposed to be better described as pyridinium isopolytetramolybdate (C₅H₆N)_2n[Mo₄O₁₃]_n. It seems that the proper coordination number of molybdenum (VI) ions is five, resulting in pyramidal coordination polyhedra [MoO₅]. Coordination polyhedra joined by common edges form tetramolybdate monomeric unit [Mo₄O₁₃]. The mers are connected by oxygen bridges Mo ‐ O ‐ Mo into infinite ribbon chains. Each two infinite chains are hold together by weaker intermolecular interactions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermodynamische Berechung des Systems Ge/H2O/H2 und experimentelle Untersuchung mit der Nahabstandsanordnung

In the temperature range from 950 to 1200 K K_p-values result from 5 · 10⁻⁵ to 6,9 · 10⁻³ for the heterogeneous reversible reaction Ge_(s) + H₂O_(g) ⇋ GeO_(g) + H₂O_(g), the average reaction enthalpy being 46,5 ± 05 kcal/mol. Etching rates calculated with these equilibrium constants for closed systems are 20-25% larger than the experimental etching rates for (110)-Ge in the sandwich device. The ratio of the etching rates is for (111)-, (100)- and (110)-Ge 1:1,4:1,8; the average reaction enthalpy calculated experimentally is 46 ± 1 kcal/mol for the temperature range 1000-1200 K. The dependence of transport rate on distance between source and substrate characterizes the sandwich device as a quasi-closed system with the diffusion as the rate controlling step of the material transport.     

Ätzuntersuchungen an Verneuilspinellen

The quality of (100), (110), and (111) oriented spinel substrates in the composition range MgO × 3.3-3.5 Al₂O₃ is examined by chemical etching. The investigation shows that KHSO₄, H₃PO₄, and Na₂B₄O₇ cause dislocation etch pits on (111), and only KHSO₄ on (100) faces. The little rod-shaped defects revealed by etching on (100), (110), and (111) faces were found to be Al₂O₃ precipitates.     

Germanium Incorporation in Ga1–xInxAs LPE Layers and GaAs Bulk Crystals

Atomic absorption spectroscopy (AAS) is used to determine the Ge concentration in Ga_1–xIn_xAs and GaAs. The orientation dependence of Ge incorporation in (111)A-and (111)B oriented samples has been studied. The distribution coefficients for both the orientations were determined to be k_Ge^(111)A = 2.6 · 10⁻² and k_Ge^(111B = 1.4 · 10⁻² for Ga_1–xIn_xAs with 0 ≦ x ≦ 0.13. The differences between the two orientations are explained with the aid of the band bending model. Doping gradients in thick epitaxial layers and along crystal length of polycristalline TGS-grown GaAs ingots have been investigated too. In Ga_1–xIn_xAs layers any Ge concentration gradient couldn't be observed, but in TGS compact crystals Ge concentration increases with crystal length because the melt composition changes significantly during solidification. The results are compared with those of electrical measurements.     

Einfluß dünnster Oxidschichten auf die Photoelektronenemission von Molybdäneinkristallen

The change of the photoelectron current from molybdenum-(111) and (100)-single crystal surfaces has been studied by emission electron microscopy. LEED investigations in the same apparatur showed that the decrease or increase of the electron emission after thermical cleaning is due to reactions of oxygen on the surfaces.     

Growth and morphological study of copper oxide single crystals

Experiments on the growth of CuO single crystals by crystallization from flux in the CuO-Bi₂O₃-PbO-PbF₂, CuO-Bi₂O₃-Li₂O, CuO-Bi₂O₃-B₂O₃, CuO-BaO-Y₂O₃, and CuO-MO_x systems (M = P, V, or Mo) have been performed. The best results were obtained in crystallization in the CuO-Bi₂O₃-PbF₂ system: prismatic single crystals of platelet-and needlelike or isometric habit with dimensions up to 1 × 10 × 10, 1 × 1 × 20, or 6 × 6 × 8 mm, respectively, have been grown. The CuO crystals show polysynthetic twinning in the form of numerous alternating light and dark bands bound by systems of parallel straight lines on the {110} and {111} faces. A possible model of twinning associated with the Cu₂O → CuO transformation is considered.     

Epitaxial growth of some II–VI compound films evaporated onto electron-bombarded NaCl substrates

Epitaxial growth of CdS, CdSe, CdTe and ZnSe films, several 10–1000 Å in thickness, evaporated onto (001), (110) and (111)NaCl substrates at 50–400° C, with or without electron bombardment, and almost perpendicularly to the substrate surface, was investigated by RHEED, TEM, TED and XMA. Without electron bombardment, both wurtzite and sphalerite phases generally coexisted in the films. When the substrates were bombarded with electrons (∽10¹² electrons/cm² · sec at 300–500 V) during evaporation at about 150–300° C a single-crystal film of the sphalerite phase was obtained on the (001) and (110)NaCl, and that of the wurtzite phase on the (111)NaCl. Similar effects were observed also when the electron bombardment was applied to the substrate immediately before or in the very early stages of the deposition, or only to the evaporation vapor during the deposition. These results indicate that surface defects and electric charges of the substrate and the vapor play very important roles in the epitaxial process of these compounds.     

Electric Characterization of Indium Sesquiselenide Single Crystals

Conductivity, Hall-effect measurements were performed on δ-phase In₂Se₃ single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In₂Se₃ had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R_H11 = 1.36 × 10⁴ cm³/coul, σ₁₁ = 4.138 × 10⁻³ Ω⁻¹ cm⁻¹ and R_H = 66.55 × 10⁴ cm³/coul, σ = 0.799 × 10⁻³ Ω⁻¹ cm⁻¹ for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.     

Plastic Deformation of Cesium Iodide Single Crystals at High Temperatures

The plastic deformation of CsI crystals of three crystallographic orientations 〈100〉. 〈110〉. and 〈111〉 at temperatures from 423 to 773 K (0.5 to 0.86T_m) and strain rates from 2 × 10⁻³ to 10⁻⁵ s⁻¹ is studied. Four-stage stres-strain curves were found, three stages being more and more distinct with an increase in temperature up to 623 K above which stage III prevails. For all the temperatures, strain rates and oreintations studied the superplasticity features (jerky flow, deformation localization, active dynamical recovery etc.) were observed. The thermal activatoin analysis has shown that the rate of high temperature deformation of CsI is controlled by dislocation climb limited in its turn by mobility of cation vacancies (quasiviscous creep).     

Die Herstellung von einkristallinen Dünnschichten aus Halbleitern mit ausgeprägter Anisotropie durch gerichtete Kristallisation der Schmelze zwischen zwei Substraten

Investigation of monocrystalline thin layers (5 to 150 μm in thickness) of Te and CdSb orientedly grown between two substrates. The form of the solidifying front strongly influencing crystal perfection can be controlled. Thin layers grown with velocities < 0.25 cm · min⁻¹ are monocrystalline with etch pit densities of 6 · 10² cm⁻². The electrical quantities R_H, σ and α of the layers are nearly identical with those of bulk material. Doped monocrystalline CdSb layers had a minority carrier concentration of ∼ 10¹⁴ cm⁻³ at 77°K.     

Growth,thermophysical and electrical properties of the nonlinear optical crystal BPO4

Bulk BPO₄ crystals have been successfully grown from high temperature solution of BPO₄, Li₂O, and MoO₃ in the molar ratio of 2.3:1:1.3 by the top‐seeded solution growth (TSSG) method using [101]^c orientation seeds. There are no visible scattering centers and impurity of Mo in the as‐grown BPO₄ crystals, whose optical homogeneity reaches up to 1.6×10^–5/cm. BPO₄ possesses a specific heat of 0.50–1.00 J·g^–1·K^–1 in the temperature range from 298 to 698 K and exhibits strong anisotropic thermal expansion behavior with α_a = 14.2 × 10^–6 K^–1 and α_c = ‐4.0 × 10^–7 K^–1. Moreover, the thermal conductivity coefficients are calculated to be κ_a = 62.4 W·m^–1·K^–1 and κ_c = 51.5 W·m^–1·K^–1, which are remarkably larger than those of some commonly used borates. The measured dielectric constants, ε_a and ε_c, are 4.8 and 6.1, respectively, and the ionic conductivity coefficients, σ_a = 4.3 × 10^–8 S/cm and σ_c = 9.5 × 10^–8 S/cm, are several orders of magnitude lower than that of LiB₃O₅ (LBO). (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of synthesis conditions on the yields and properties of HZSM‐5

In the SiO₂‐Al₂O₃‐TPAOH‐NH₄OH system through a two‐step procedure, the effects of synthesis parameters on the yields and properties of HZSM‐5 were studied. As the feeding n(SiO₂)/n(Al₂O₃) ratio increased, the yields of synthesized samples were between 11% and 14% while the crystallinity tended to decrease at the ratio > 300. At the ratio of 150, the yield was 13.7% and the ratio of actual yield to theoretical yield was 93%. The sample shaped ellipse‐like particles of 3 × 10⁻⁶ m. At the n(NH₃)/n(SiO₂) ratio of 1.5, the yield was 13.1% and the sample showed regular ellipse‐like particles of 2 × 10⁻⁶ m. Too high dosage of NH₄OH lowered the yield and the crystallinity. The addition of seed crystal favored the HZSM‐5 synthesis in high crystallinity. At the addition amount of 4%, the yield reached 13.9% and the sample shaped in spherical particles of 0.5 × 10⁻⁶ m. Synthesized HZSM‐5 with a surface area of 455 m²·g⁻¹ and intrinsic acidity showed highly catalytic activity toward the methanol conversion to olefins reaction.     

Zur anisotropen Dilatation von Fe3S4-Kristallen im elektrostatischen Feld

Synthetic crystals of Fe₃S₄ (greigite, spinel type, lattice constant 9.87 ÅU) extend by about 0.05 ÅU in an electrostatic field (field strength 860 volts · cm⁻¹) along the [111] axis in preference to any other directions. This property to be easily deformed makes it difficult to develop this crystallite (grain size about 300 ÅU) to a single crystal. It transforms into hexagonal pyrrhotite when cultivating it for crystal growth.     

DCXS and RHEED characterization of effectiveness of annealing implanted Si crystals by using pulsed UV excimer laser and sample scanning technique

In the experiment (111) oriented silicon plates were implanted with 80 keV Ge ions (dose 5 × 10¹⁵ cm⁻²) and with 150 keV Kr ions (dose 5 × 10¹⁵ cm⁻²). Then the samples were annealed with the pulsed excimer laser by using the sample scanning technique. The effectiveness of the annealing has been analyzed by means of double crystal X-ray spectrometry (DCXS) and reflection high energy electron diffraction (RHEED). The results of the experiment show that the applied technique of annealing considerably improves the perfection of the structure of the implanted silicon crystals.