Paramagnetische Relaxation von CeCl3

The paramagnetic relaxation in CeCl₃ was investigated in the temperature interval between 1.07°K and 4.21°K using a mutual inductance bridge at frequencies between 3 Hz and 3200 Hz. The dependence of the complex susceptibility on temperature below theλ point is given by a Debye function. Above this temperature, however, deviations occur. The temperature dependence of the relaxation time forT<T _λ can be described byτ～T ^?n where 1.82≦n≦2.35 for 470 Oe≦H≦3360 Oe. At the highest temperatures Orbach Processes occur over the first excited crystal field component which according to these measurements lies atE _II=k(56±10)°K. In the entire temperature range the relaxation processes are determined by further relaxation mechanisms in addition to the spin lattice relaxation. The nature of these could not, however, be determined.     

Zeitliches Abklingen und Anisotropie von p-Terphenyl- undp-Terphenyl-Anthrazen-Mischkristallen bei Beschuß mit α-Teilchen

The time dependence of scintillation intensity from single crystals ofp-terphenyl and mixed crystals ofp-terphenyl and anthracene after bombarding with α-particles was investigated at the two temperaturesT=296 °K andT=92 °K. For the crystals ofp-terphenyl the time dependence of the scintillation anisotropy was also measured. Using the formulas given byKing andVoltz the decay curves ofp-terphenyl were decomposed into two components. Good agreement between experiment and theory was found. The ratio of the prompt intensity to the delayed intensity was determined to be 1∶2 atT=296 °K and 1∶3 atT=92 °K. The diffusion constants for triplet excitons were calculated to beD _T(296 °K)≈10^?5 cm² sec^?1 andD _T(92 °K)≈ 2×10^?6 cm² sec^?1, and the triplet-triplet interaction rate constantsχ _tt(296 °K)≈ 2.5×10^?11 cm³ sec^?1 andχ _tt(92 °K)≈0.5×10^?11 cm³ sec^?1.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Mößbauereffekt in Eisenstilben und FeCl2·H2O

Using Mößbauer effect measurements in the temperature range between 3 °K and 310 °K the magnetic fields at the nucleus in iron-stilbene, FeCl₂·H₂O and FeCl₃ are determined to beH _T=0=(250±10) kOe, (252±18) kOe and (468±10) kOe; a Néel-temperature ofT _N=(23±1) °K is measured for iron-stilbene. The electric quadrupole splittings atT=0 °K for iron-stilbene and FeCl₂ ·H ₂ O, ΔE=(+2.52±0.02) mm/sec and (+2.50±0.05) mm/sec, yield electric field gradients at the iron nucleus ofq _z=+9.7·10¹⁷ V/cm² and +9.6·10¹⁷ V/cm², whereq _z⊥H; Debyetemperatures of θ=162 °K and 188 °K are obtained. The energy of the excited 3d-electron levels in iron-stilbene is estimated to Δ₁=309 cm^?1 and Δ₂=618cm^?1 as deduced from the temperature dependence ofΔE. In contrast to the suggestion ofEuler andWillstaedt bivalence of the iron in ironstilbene is found; its composition is shown to be 4(FeCl₂ ·H ₂O)·stilbene.     

Optical investigation of DyFeO3

Optical absorption spectra of DyFeO₃ have been investigated at 1.2≦T≦4.2 °K, andT=77 °K From the temperature dependent lineshift a Néel temperature ofT _N=(3.8±0.5) °K is deduced for the dysprosium sublattices. The groundstate splitting due to the iron-dysprosium interactions is about 1.5 cm^?1 and due to the dysprosiumdysprosium interactions (5.0±1.4) cm^?1. Zeeman studies give the magnetic moment of the dysprosium ions asμ=(9.2±1.0)μ _B.     

TSC study of electric dipole relaxations in chlorapatite

Electric dipole relaxations in chlorapatite, Ca₅(PO₄)₃Cl, have been studied with the fractional polarization mode of the thermally stimulated currents (TSC) method. Fifty-one of the fifty-seven sets of data obtained in the range 10–443°K fell naturally into four groups yielding compensation temperatures T_C of T_C1, = 202°C, T_C2: = 202°C, T_C3 = 420°C and T_C4= 644°C, with estimated error < 10°C, and characteristic relaxation times τ_C of τ_C1 = 1.3 × 10^?7s, τ_C2 = 3.2 × 10^?6s, τ_C3 = 8.8 × 10^?5s and τ_C4 = 2.3 × 10^?4s. Atomic-scale physical models involving Cl^? ion motion are offered for the 202°C compensation at the temperature of the reported monoclinic-to-hexagonal phase transition and for the 420°C compensation, at which temperature the Cl^? ions individually are thought to have enough thermal energy to maintain the hexagonal form dynamically.     

Dipole co-operative motions in an A-type carbonated apatite,Sr10(AsO4)6CO3

Relaxation of reorientable electric dipoles in A -type carbonated strontium arsenate, an apatite, has been studied with the thermally stimulated currents method. The fractional polarization technique permitted registration, in the range 9–428 K, of a separate current vs temperature curve for each small range of dipole-reorientation activation energies. Interpretation of these on a simple Debye model revealed four compensation temperatures, −100, 175, 392 and 573°C, with associated relaxation times τ_c = 2 × 10⁻⁶, 9 × 10⁻⁷, 2 × 10⁻⁶, and 1 × 10⁻⁵s, respectively. It is proposed that (1) the reorientable dipoles are primarily carbonate ions, and that (2) the co-operative phenomena associated with the 175°C and 392dgC temperatures are, respectively, a quasi-statically stabilized monoclinic-to-hexagonal phase transition and the onset of dynamical stabilization of the hexagonal phase.     

Paramagnetische Relaxation im Terbiumäthylsulfat

The paramagnetic relaxation of Tb_0,01 Y_0,99(C₂H₅SO₄)₃·9H₂O at temperatures between 1,14°K and 4,21°K has been investigated with the absorption-dispersion method at frequencies between 5 sec^?1 and 10240 sec^?1 and different magnetic fields. AtH=700 Oe. The relaxation time follows the equationτ ^?1=[A H ³ coth (g _z μ _B H/2k T)+B T ⁷] sec^?1 as a function of temperature. ForH<800 Oe the paramagnetic relaxation is influenced by cross relaxation processes between the hyperfine structure levels.     

Reversibler Gleichfeld- und Mikrowellen-Durchschlag in n-Typ-Germanium bei 4,2 °K

The microwave induced breakdown characteristic inn-type germanium at 4.2 °K has been observed and compared with the d.c. induced breakdown characteristic obtained from the same sample. The effective microwave breakdown field intensity is nearly equal to the field intensity observed in d.c. induced breakdown. However, in the breakdown region with conductivities greater than 0.1 ohm^?1 cm^?1 a relaxation effect was found and interpreted qualitatively as momentun relaxation. In the initial breakdown the relaxation time τ _m is small,ω ²τ _m ² being ?1 whereω/2π=9·10⁹s^?1 is the microwave frequency. The relaxation time is determined by predominant neutral impurity scattering with at last 5·10¹⁴ impurities per cm³. This scattering mechanism becomes ineffective when the impurities are ionized by hot carriers. Ionized impurity scattering or acoustic phonon scattering will then be predominant with increased and energy dependent values of τ _m . The increased phase shift between carriers and field causes a decreased energy transfer from the field to the carriers, an accordingly smaller ionization rate, and finally results in a nearly constant a.c. conductivity. The observed anisotropy of the breakdown field intensity is in qualitative agreement with the assumption that only carriers in “hot” valleys of the conduction band initiate the breakdown by impact ionization. The unsufficient quantitative agreement may be due to an inhomogeneity of doping which is suggested by comparing the values of the ohmic low temperature conductivity of the samples.     

The effect of carbon content on the beginning of slip in single crystals of Fe-3·2 wt%Si alloy

Specimens with 18 ppm and 100 ppm carbon of different orientations were deformed by compression (?～1·1×10^?4 s^?1) at the temperatures 150 °K, 195 °K, 293 °K, 393 °K and 483 °K. The measuredΨ(χ) andτ(χ) curves are presented. The changes of the curves caused by increased carbon content are discussed from the point of view of the low temperature induced cross-slip. Deviations from the Schmid law of critical resolved shear stress are found for both carbon contents. The dependence of the CRSS on temperature for specimens of standard purity has a slightly different course for orientationχ=?30° than for orientationsχ=0° andχ=+30°. These deviations are discussed in terms of the influence of normal stress on the slip. The course ofΔτ (difference between the CRSS in the MRSS plane for specimens with 100 ppm and 18 ppm of carbon) onχ is discussed using different models of lattice hardening due to interstitial impurities. These models can also be applied to the explanation of deviations ofτ(χ) curves from the Schmid law.     

Isotopeneffekt in der paraelastischen relaxation

The kinetics of the reorientation of the molecular impurities¹⁶O₂ ^? and¹⁸O₂ ^? in the host lattices KCl, KBr and KJ has been investigated by means of ESR as a function of uniaxial stress in the temperature range between 1,3°K and 4,5°K. Below 4°K the reorientation rate is proportional to the temperature, indicating that one-phonon processes dominate at low temperatures. ForT>4°K the reorientation through excited librational levels becomes significant. The large isotope effect in the reorientation rate of¹⁶O₂ ^? and¹⁸O₂ ^? confirms that tunneling plays an important role. The analogy between the diffusion of polarons and the reorientation of molecules in solids is discussed in detail. The evaluation and interpretation of the experimental results in terms of the theory of Gosar and Pire yields values for the tunneling matrix elements, the potential barrier between two equilibrium orientations, the libration frequencies and an effective moment of inertia. The theory accounts well for the contribution of the one-phonon processes to the relaxation rate for stress along [001]. For stress along [111] the agreement is only qualitative.     

Interactions of μAl acceptor impurity in weakly and heavily doped silicon

The interactions of the aluminum acceptor impurity in silicon are investigated using polarized negative muons. The polarization of negative muons is studied as a function of temperature on crystalline silicon samples with phosphorus (1.6×10¹³ cm^?3) and boron (4.1×10¹⁸ cm^?3) impurities. The measurements are performed in a magnetic field of 4.1 kG perpendicular to the muon spin, in the temperature range from 4 to 300 K. The experimental results show that, in phosphorus-doped n-type silicon, an _μAl acceptor center is ionized in the temperature range T>50 K. For boron-doped silicon, the temperature dependence of the shift of the muon spin precession frequency is found to deviate from the 1/T Curie law in the temperature range T ? 50 K. The interactions of a _μAl acceptor that may be responsible for the effects observed in the experiment are analyzed.     

Sur les propriétés magnétiques de l'adénosine triphosphate (ATP) et de ses constituants

A detailed thermomagnetic study (80°–380°K) has been made on polycrystalline adenosine triphosphate (disodium salt), hydrated, dried, compressed and deeply cooled. The susceptibility-temperature curves exhibit around 180°K an abrupt transition from the Curie paramagnetismχ?χ ₀=CT ^?1,C=1.37·10^?5 cm³ g^?1°K, to a state, which most frequently is a temperature independent paramagnetism of the order of 10^?7 cm³ g^?1 (extremely weak ESR absorption at room temperature according toIsenberg andSzent-Györgyi). The Curie paramagnetism might be related to the acceptor-donor process of charge transfer imagined bySzent-Györgyi to explain the energetic comportment of ATP. Extensive thermomagnetic study of adenosine, KH₂PO₄ and KD₂PO₄ was made. Using a simple model based on these data we have constructed susceptibility-temperature curves for ATP di-Na which approximate the real behaviour fairly well.     

Nuclear spin lattice relaxation of191m Ir in Fe

Thermal cycling of the lattice temperature was used to determine the nuclear spin lattice relaxation of^191m IrFe in polarizing fields of 0.05 to 1.3 T. At low temperatures, the relaxation time is not very much shorter than the lifetime of^191m Ir. In the first part of the paper, the master equation formalism is extended to include a finite lifetime. Our result for the reduced relaxation constant, γ² C _K =(1.48±0.11)·10¹⁴ K s^?1 T^?2 (high field limit) is in serious disagreement with that of a spin echo measurement of¹⁹³IrFe, but fits much better into the general systematics. A comparison of relaxation rates for 3d-, 4d-, and 5d-impurities in Fe is given. As a by-product, a Kapitza conductivity constant ofl _K =1.5 mW cm^?2 K^?4±30% was found between Fe and dilute³He/⁴He.     

199Hg and63,65Cu NMR studies of mercury based high-T c superconductors

Hg-oxide ceramic high temperature superconductors were studied by¹⁹⁹Hg and^63,65Cu NMR spectroscopy. Room temperature spectra, spin-spin and spin-lattice relaxation times of samples with different superconducting transition temperatures are presented. A spin-lattice relaxation time ofT ₁=35 msec and a spin-spin relaxation time ofT ₂=1.6 msec were found for the¹⁹⁹Hg NMR. All samples exhibit similar characteristic powder spectra caused by an axially symmetric¹⁹⁹Hg spin interaction. The isotropic value and the anisotropy of the tensor relative to solid HgCl₂ as a standard substance is estimated. Furthermore, results of^63,65Cu NMR measurements at a temperature of 4.2 K which exhibit a typical powder line shape (forI=3/2) are presented.     

Dipolar studies in CaF2 with Ce3+

Dielectric relaxation in CaF₂ doped with various amounts of Ce³⁺ (0·01 to 1·0 mol%) was measured. The value of the activation energy for orientation of the dipoles {Ce³⁺-F^? interstitial} was determined to be H = (0·46 ± 0·01) eV. The frequency factor was found to have the value τ_o = (5 ± 1) × 10^?15 sec, giving for the vibrational frequency of the interstitial the value ν_o = (5 ± 1) × 10¹³ sec^?1.The number of dipoles contributing to the dielectric loss peak was determined to be between 10¹⁷ and 8 × 10¹⁷ cm^?3 for the different doping amounts of Ce³⁺. Optical absorption measurements showed the existence of large aggregate bands. We could verify that there exists a second-order reaction of aggregation, which is responsible for the non-linearity found between optical absorption at 305 nm and the nominal concentration of Ce³⁺ in the samples. On the other hand, if we assume that the centers which contribute to optical absorption at 305 nm are those also responsible for the relaxation peak, we find that the number contributing to each process is not the same. We can define an interaction radius R as the minimum separation between two dipoles allowing them to contribute to the relaxation peak. From our experimental data R ? 3·8 × 10^?7 cm.     

The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon

A study is made into the temperature dependence of residual polarization of negative muons in crystalline silicon with the concentration of impurity of the n-and p-types ranging from 8.7×10¹³ to 4.1× 10¹⁸ cm^?3. The measurements are performed in a magnetic field of 1000 G transverse to the muon spin, in the temperature range from 4.2 to 300 K. The form of the temperature dependence of the relaxation rate v of the magnetic moment of the μAl⁰ acceptor in silicon is determined. For a nondegenerate semiconductor, the relaxation rate depends on temperature as v ∝ T ^q (q ≈ 3). A variation in the behavior of the temperature dependence and a multiple increase in the relaxation rate are observed in the range of impurity concentration in excess of 10¹⁸ cm^?3. The importance of phonon scattering and spin-exchange scattering of free charge carriers by an acceptor from the standpoint of relaxation of the acceptor magnetic moment is discussed. The constant of hyperfine interaction in an acceptor center formed by an atom of aluminum in silicon is estimated for the first time: |A _hf (Al)/2π| ～ 2.5×10⁶s^?1.     

Optical investigation of HoFeO3

The absorption spectra of HoFeO₃ were investigated in the near infrared spectral region at temperatures of 1.2, 4.2, 20 and 77 °K respectively. At every temperatureT≦20 °K all the absorption lines show the same splitting which is attributed to the groundstate; this splitting is (7.2±0.5) cm^?1 at 20 °K and decreases to (4.9±0.8) cm^?1 extrapolated to 0 °K. From these splittings the holmium-iron and the holmiumholmium interactions can be deduced. Measurements with an external magnetic field yield a magnetic moment ofμ=(7.6±0.7)μ _B per holmium ion. The moments are directed at angles of ?28° and ?152° with respect to theb-axis.     

New results in the study of Brillouin scattering in thiourea

Below T₂ = 202 K, in the incommensurate phase, a Debye relaxation appears for c₃₃; it can be attributed to a linear coupling between an acoustical mode and a phason. The relaxation time is τ = τ₀/(T₀?T) with τ₀ = 6.2 x 10^?12 sec deg and T₀ = 200.9 K. The same phenomenon appears more weakly for c₁₁. The c₆₆ elastic constant has a double discontinuity around T₁ = 169 K; this shows that in the vicinity of T₁ there are two transitions, separated by a temperature interval of 3°.     

Dielectric response of KCN crystal at ultra low frequencies

The dielectric response of pure KCN crystals (ε′, ε″ and tg σ) has been measured as a function of temperature in the frequency range 10⁻² Hz to 10⁴ Hz. In the antiferroelectric phase the width of the loss peak are found practically independent of temperature (1.4 decades) and close to a Debye behavior; the relaxation time of the CN⁻ dipoles is characterized by an Arrhenius behavior τ = τ₀ exp (U/KT) with τ₀ = 7.26 × 10⁻¹⁵s and U = 0, 147 eV confirming a classical temperature activated reorientation of the dipoles.