Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors

A comprehensive understanding of the organic semiconductor material pentacene is meaningful for organic fieldeffect transistors （OFETs）. Thin films of pentacene are the most mobile molecular films known to date. This paper reported that the pentacene sample was successfully synthesized. The purity of pentacene is up to 95%. The results of a joint experimental investigation based on a combination of infrared absorption spectra, mass spectra （MS）, element analysis, x-ray diffraction （XRD） and atom force microscopy （AFM）. The authors fabricated OFET with the synthesized pentacene. Its field effect mobility is about 1.23 cm^2/（V·s） and on-off ratio is above 10^6.     

Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors

A comprehensive understanding of the organic semiconductor material pentacene is meaningful for organic field-effect transistors (OFETs). Thin films of pentacene are the most mobile molecular films known to date. This paper reported that the pentacene sample was successfully synthesized. The purity of pentacene is up to 95\%. The results of a joint experimental investigation based on a combination of infrared absorption spectra, mass spectra (MS), element analysis, x-ray diffraction (XRD) and atom force microscopy (AFM). The authors fabricated OFET with the synthesized pentacene. Its field effect mobility is about 1.23\,cm$^2$/(V$\cdot$s) and on--off ratio is above 10$^{6}$.     

Study on solid structure of pentacene thin films using Raman imaging

We present a 532‐nm excited Raman imaging study of pentacene thin films (thickness, 2, 5, 10, 20, 50, 100, and 150 nm) prepared on an SiO₂ surface. The structure of the pentacene films has been investigated by images and histograms of the ratio (R) of intensity of the 1596‐cm⁻¹ band (b_3g) to that of the 1533‐cm⁻¹ band (a_g), which can be used as a marker of solid‐state phases: 1.54‐nm and 1.44‐nm phases. The Raman images showed that island‐like 1.44‐nm phase domains are grown on the 1.54‐nm phase layer from 50 nm, and all the surface of the 1.54‐nm phase layer is covered with the 1.44‐nm phase layer from 100 nm. The structural disorders have been discussed on the basis of the full width at half maximum of a band in the histogram of the R values for each film. Copyright © 2012 John Wiley & Sons, Ltd.     

Structural and optical properties of layers of pentacene formed by PLD method

Organic films fabrication offers the possibility of producing electronic devices of low weight, mechanical flexibility and low cost. One suitable material for organic film fabrigation which is the subject of the great interest is pentacene, because it is characterized by the large carrier mobility (∼1 cm²/Vs). In this work, the growth of pentacene layers using pulse laser deposition (PLD) on different substrates (glass/ITO, Si) is described and various processing parameters are investigated. Two pulsed YAG:Nd³⁺ laser wavelengths were used for the ablation of the PLD target: the first harmonic at 1064 nm aGn:dNdth3+e second at 532 nm. The structure of the layers formed was examined using SEM and RHEED methods. The results were compared with results of optical spectroscopy studies. It will be shown that layers deposed using second harmonics have a higher quality than those for first harmonic. The other PLD parametersalso have a strong influence on the structure quality of layers.      

对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

通过扫描电镜和X射线衍射对SiO₂衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在SiO₂衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100nm,且薄膜有较好的结晶取向,呈多晶态存在. 酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在. 还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究. 有源层的厚度为40nm,绝缘层SiO₂的厚度为250nm,器件的沟道宽长比(W/关键词： 有机薄膜晶体管 并五苯薄膜 酞菁铜薄膜 μ_EF)')" href="#">场效应迁移率(μ_EF)     

Surface morphology and local magnetic properties of electrodeposited thin iron layers

Thin iron layers with different thickness were prepared by electrodeposition on the polycrystalline substrate. The surface morphology of the layers, their structure and local magnetic properties were studied using scanning tunneling microscopy (STM), X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS). STM studies revealed the granular structure of the surface of the electrodeposited iron layers with the roughness up to 10 nm. XRD analysis proved that these layers were highly strained. The CEMS spectra showed an in-plane magnetic anisotropy in the iron layers. Isomer shift of the electrodeposited iron was different than that of the -Fe. This difference was attributed to the internal stresses existing in the electrodeposited layers.     

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO₂ deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage V_TH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μ_EF) of OTFT device increased with the increase of V_DS, but the μ_EF of OTFT device increased and then decreased with increased V_GS when V_DS was kept constant. When V_DS was --50V, on/off current ratio was 0.48× 10⁵ and subthreshold slope was 0.44V/dec. The μ_EF was 1.10cm²/(V.s), threshold voltage was --2.71V for the OTFT device.     

Introduction of F_4-TCNQ/MoO_3 layers for thermoelectric devices based on pentacene

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane(F4-TCNQ) and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.     

并五苯分子在Ag(110)表面成膜过程中的结构研究

采用低能电子衍射原位研究了并五苯分子（C₂₂H₁₄）在Ag(110)单晶表面的生长，观察了在初期沉积过程及随后基底变温过程中分子层结构的形成和变化.室温下并五苯分子在Ag(110)基底表面具有高的迁移性，从开始无序的亚单层膜结构逐渐形成有序的单层膜结构．实验和理论分析表明：并五苯分子平铺在Ag(110)表面，形成了与基底构成有关的有序结构，存在沿基底晶向成镜面对称的两种畴界取向，在基底温度从室温升高到接近并五苯升华温度的过程中，基底上的有序分子层结构保持稳定不变 关键词： 并五苯 低能电子衍射图案 分子层结构 Ag(110)     

Electrochemical properties of undoped CVD diamond films

The electrochemical properties of undoped diamond polycrystalline films grown on tungsten wire substrates using methanol as a precursor are described. The diamond film quality was changed by introducing sp²-bonded non-diamond carbon impurity through adjustment of the methanol-to-hydrogen (C/H) source gas ratio used for diamond growth.The electrodes were characterized by Raman spectroscopy, scanning electronic microscopy (SEM) and cyclic voltammetry (CV).Diamond coated tungsten wires were then used as a working electrode to ascertain their electrochemical behavior in electrolytic medium. Electrochemical windows of these films were found to be suitable in the potential range of [−2.5 V, +2.2 V] vs. Ag/AgCl in acid medium (0.1 M KCl).The electrochemical behavior was evaluated also using the Fe(CN)₆^3−/4−redox couple.The results demonstrate that the grain boundaries and sp²-hybridized carbon impurity can have a significant influence on electrochemical window of undoped diamond electrodes. It was observed that with increasing sp² carbon impurity concentration the electrochemical window decreases.     

Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence (PL) is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increa...     

Vibrational properties of perfluoropentacene thin film

We have studied the vibrational properties of perfluoropentacene (PFP) thin films on highly oriented pyrolytic graphite (HOPG) substrates by high-resolution electron energy loss spectroscopy (HREELS) and Raman spectroscopy. The HREELS spectra showed slight but clear increase in the vibrational energies with increasing film thickness as well as with decreasing temperature of the multilayer films. In the polarization-dependent Raman spectra of a multilayer film, the depolarization ratios of all detected vibrations with the Ag irreducible representation were found to be larger than 1, indicating that the molecular structure is distorted in the multilayer. Both results suggest that there is a fairly strong intermolecular interaction in PFP multilayer films.     

Impact of molecular tilt angle on the absorption spectra of pentacene:perfluoropentacene blends

We investigate the relation between the optical properties and the average molecular tilt angle for blends of pentacene and perfluoropentacene, which can be considered as a prototypical donor–acceptor complex. Combining near‐edge X‐ray absorption fine‐structure spectroscopy and optical spectroscopy we study thin films of these compounds prepared at three different substrate temperatures T_sub. For T_sub =180 K we observe a larger average tilt angle than for blends prepared at higher substrate temperatures. This orientational change has significant impact on the uniaxial anisotropic optical properties of the mixed films which we measure post growth as well as in real‐time during growth. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Surface enhanced Raman scattering in organic thin films covered with silver, indium and magnesium

In situ resonant Raman spectroscopy was applied for the investigation of the interface formation between silver, indium and magnesium with polycrystalline organic semiconductor layers of 3,4,9,10-perylene tetra-carboxylic dianhydride (PTCDA). The spectral region of internal as well as external vibrational modes was recorded in order to achieve information related to the chemistry and the structure of the interface as well as to morphology of the metal layer. The experiments benefit from a strong enhancement of the internal mode scattering intensities which is induced by the rough morphology of deposited metals leading to surface enhanced Raman scattering (SERS). The external modes, on the other hand, are attenuated at different rates indicating that the diffusion of the metal atoms into the crystalline layers is highest for indium and lowest for magnesium.     

Surface-enhanced Raman scattering study of silver deposition on thin Alq3 layers

Surface-enhanced Raman scattering (SERS) spectroscopy is applied to study in situ the interface formation of silver on thin Alq₃ films. The changes in the frequencies of Alq₃ vibrational modes are moderate and their line-shape is preserved upon Ag deposition. Moreover, a good correspondence appears between the SERS and powder spectra and frequencies predicted by density functional calculations for the meridianal isomer. The behaviour of Raman spectra indicates that no chemical interaction occurs between the Ag atoms and Alq₃ molecules.     

Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Nitrogen-doped amorphous carbon thin films (a-CN_x) were prepared on silicon substrate by pulsed laser deposition process using methane (CH₄) and nitrogen (N₂) as source gas. The electrical properties of a-CN_x films changes with nitrogen concentration in the film structure. The intensity ratio of the D and G peak (I_D/I_G) increases with higher nitrogen concentration, which means that sp²-clusters were formed in these films and is responsible for the enhancement of conductivity of the a-CN_x films. We observed that the amorphous carbon (a-C) films becoming more graphitic in nature yielding higher conductivity/lower resistivity with increase of nitrogen concentration. Electron field emission result shows that the emission current density enhances with nitrogen doping that indicates the useful in electron field emission devices application.     

Surface and interface electronic properties of AlGaN(0001) epitaxial layers

AlGaN layers with Al content varying over the whole range of compositions were grown by molecular beam epitaxy (MBE) on n-6H-SiC substrates. The band gap energy is obtained from the vanishing of Fabry–Pérot oscillations in a fit to optical reflection spectra near the band gap absorption edge. The surface potential was determined by in-situ X-ray photoemission spectroscopy (XPS) and is found to increase as a function of the Al content from (0.5±0.1) eV to (1.3±0.1) eV, from GaN to AlN. A Si₃N₄ thin passivation layer was formed in-situ onto a 2DEG AlGaN/GaN structure. The mechanism underlying the passivation of high electron mobility transistor (HEMT) structures is suggested to be based on the formation of interface states, which keep the Fermi level fixed at a position close to that of the free AlGaN surface. PACS 73.20.-r; 73.40.-c; 73.40.Kp     

The analysis of superconducting thin films modified by AFM lithography with a spectroscopic imaging technique

A practical application of nanolithography using atomic force microscopy (AFM) was accomplished in fabricating superconducting flux flow transistors (SFFTs). It was found that it is essential to oxidize a superconducting thin film, grown on LaAlO₃ substrates by a thermal CVD process, by an applied bias voltage between a conducting AFM tip and the films, since I/V characteristics of the device were mainly controlled by the modified gate area in the SFFT. After AFM lithography, the critical current of an YBCO thin film was found to be degraded. Raman lines in the modified YBCO film were observed at 340, 502, and 632 cm⁻¹ in Ar the laser system and 142, 225, and 585 cm⁻¹ in the He-Ne laser system. Raman fluorescence images were also produced by mapping the Raman peaks. A strain image of the peak at 142 cm⁻¹ was most clear, which means that a surface of the YBCO thin film was changed into the YBa₂Cu₃O₆ insulator. AFM nanolithography enables us to fabricate a channel between a source and a drain in SFFT in order to get I/V characteristics.     

并五苯同质异相体中分子间势能与能带计算

采用Born-Mayer-Haggins对势模型，分析了并五苯分子间势能及其相互作用. 用紧束缚模型计算了两种并五苯同质异相体结构的能带宽度. 计算带宽随温度升高减小8%—14%. 关键词： 并五苯 同质异相体 分子间势能 能带计算