利用ICP法测定ZnMgO薄膜的Mg组分

利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn_1-xMg_xO薄膜的Mg组分进行了测试. 经理论分析，得到使用1次和2次检量式所确定的Zn_1-xMg_xO薄膜中的Mg组分的差异. 将采用1次检量式的ICP测定与EPMA测定结果进行对照，表明当Mg组分x≤0.5时二者的测试结果相当一致，由此证明ICP测试结果的正确性. 关键词： ZnMgO薄膜 Mg组分 分子束外延(MBE) 电感耦合等离子体(ICP)     

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为了更好地提高引出离子束的均匀性,对离子束刻蚀用矩形射频电感耦合等离子体(ICP)离子束源提出了三种线圈的设计方法,并对这三种线圈激发的电场进行了数值计算和比较。结果表明,直线段式不等距天线和并联多螺旋不等距天线线圈能够产生均匀性良好的电场,且其耦合效率高。     

感应耦合等离子体的1维流体力学模拟

采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

感应耦合等离子体的1维流体力学模拟

 采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

Characteristics of a dual‐radio‐frequency cylindrical inductively coupled plasma

The plasma parameters such as electron density, effective electron temperature, plasma potential, and uniformity are investigated in a new dual‐frequency cylindrical inductively coupled plasma (ICP) source operating at two frequencies (2 and 13.56 MHz) and two antennas (a two‐turn high‐frequency antenna and a six‐turn low‐frequency (LF) antenna). It is found that the electron density increases with 2 MHz power, whereas the electron temperature and plasma potential decrease with 2 MHz power at a fixed 13.56 MHz power. Moreover, the plasma uniformity can be improved by adjusting the LF power. These results indicate that a dual‐frequency synergistic discharge in a cylindrical ICP can produce a high‐density, low‐potential, low‐effective‐electron‐temperature, and uniform plasma.     

多源感应耦合等离子体的产生及等离子体诊断

基于单组多匝线圈的小腔体感应耦合等离子体，研究了线圈配置与耦合效率等之间的关联，并将实验结果应用到多组并联螺旋天线感应耦合等离子体放电体系中.采用了改进的朗谬尔探针方法对单源和多源感应耦合等离子体的电参量分别进行了表征.结果表明，使用多螺旋天线并联方式可以产生低气压高密度的感应耦合等离子体放电，通过调整工艺参量，可以将等离子体密度和光刻胶的刻蚀均匀性控制在80％以上. 关键词： 多源感应耦合等离子体 朗谬尔探针 等离子体灰化     

射频电感耦合夹层等离子体中的模式转换

本文利用微波相位法和光谱诊断法, 研究了ICP放电等离子体在圆台状夹层等离子体中E模和H模相互转换的物理现象. E模和H模的之间转换过程是一个瞬间突变的, 转换点的输入功率随真空室压强的变化而变化. H模向E模转换的阈值功率低于E模向H模转换的值, 等离子体参数随输入功率变化曲线类似于铁磁物质中的磁滞回线. Ar II 408.2 nm谱线的强度的变化规律和电子密度随功率变化的规律基本一致. 通过本实验可以获得一种电子密度范围为3.85×10¹¹ cm^-3 < n_e < 4.68× 10¹¹ cm^-3, 外表面积为0.3 m², 厚度为2 cm稳定工作的等离子体源.     

Influence of ion species ratio on grid-enhanced plasma source ion implantation

Grid-enhanced plasma source ion implantation (GEPSII) is a newly proposed technique to modify the inner-surface properties of a cylindrical bore. In this paper, a two-ion fluid model describing nitrogen molecular ions N_2^+ and atomic ions N^+ is used to investigate the ion sheath dynamics between the grid electrode and the inner surface of a cylindrical bore during the GEPSII process, which is an extension of our previous calculations in which only N_2^+ was considered. Calculations are concentrated on the results of ion dose and impact energy on the target for different ion species ratios in the core plasma. The calculated results show that more atomic ions N^+ in the core plasma can raise the ion impact energy and reduce the ion dose on the target.     

Changes of the electron dynamics in hydrogen inductively coupled plasma

Changes of the electron dynamics in hydrogen （H2） radio-frequency （RF） inductively coupled plasmas are investigated using a hairpin probe and an intensified charged coupled device （ICCD）. The electron density, plasma emission intensity, and input current （voltage） are measured during the E to H mode transitions at different pressures. It is found that the electron density, plasma emission intensity, and input current jump up discontinuously, and the input voltage jumps down at the E to H mode transition points. And the threshold power of the E to H mode transition decreases with the increase of the pressure. Moreover, space and phase resolved optical emission spectroscopic measurements reveal that, in the E mode, the RF dynamics is characterized by one dominant excitation per RF cycle, while in the H mode, there are two excitation maxima within one cycle.     

感应耦合等离子体刻蚀p-GaN的表面特性

研究了p-GaN材料经感应耦合等离子体(ICP)刻蚀后的表面特性,并用不同的方法对刻蚀表面进行处理.利用原子力显微镜(AFM)和X射线光电子能谱(XPS)对刻蚀样品进行分析,并在样品表面制作Ni/Au电极,进行欧姆接触特性的测试.实验结果表明了NaOH溶液处理表面对改善材料表面和欧姆接触特性是比较有效的. 关键词： GaN 感应耦合等离子刻蚀 表面处理 欧姆接触     

13.56 MHz/2 MHz柱状感性耦合等离子体参数的对比研究

通过Langmuir双探针和发射光谱诊断方法,对比研究了驱动频率为13.56 MHz和2 MHz柱状感性耦合等离子体中电子密度和电子温度的径向分布规律.结果表明:在高频和低频放电中,输入功率的增加对等离子体参数产生了不同的影响,高频放电中主要提升了电子密度,低频放电中则主要提升了电子温度.固定气压为10 Pa,分别由高频和低频驱动时,电子密度的径向分布均为"凸型".而电子温度的分布差异比较明显,高频驱动时,电子温度在腔室中心较为平坦,在边缘略有上升;低频驱动时,电子温度随径向距离的增加而逐渐下降.为了进一步分析造成这种差异的原因,在相同放电条件下采集了氩等离子体的发射光谱图,利用分支比法计算了亚稳态粒子的数密度,发现电子温度的径向分布始终与亚稳态粒子的径向分布相反.继续升高气压到100 Pa,发现不论高频还是低频放电,电子密度的径向分布均从"凸型"转变为"马鞍形",较低气压时电子密度的均匀性有了一定的提升,但低频的均匀性更好.     

Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition

A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E (capacitive discharge) to H (inductive discharge) mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial (2D image) profile is symmetrical in the H mode, but the 2D image is an asymmetric profile in the E mode. Moreover, the electron density and emission intensity jump up discontinuously at high pressure, but increase almost continuously at the E to H mode transition under low pressure.     

放电功率变化对电磁波在电感耦合闭式等离子体中的衰减特性

射频电感耦合等离子体(ICP)放电方式能够在较宽的压强范围内产生大面积、密度高的等离子体,在对电磁波衰减应用中具有较大优势。通过研究ICP等离子体与电磁波相互作用的过程,改进闭式等离子体模型,建立电磁波在非均匀等离子体中传播的分层计算模型,对实测诊断分布情形下等离子体与电磁波的相互作用进行研究,得到不同功率条件下电磁波衰减的变化情况;提出射频电感耦合闭式等离子体用于电磁波衰减的方法并实验验证,基于等离子体覆盖金属平板的测量模型,在实验室内搭建了以金属板为衬底的弓形微波反射测试系统,研究了闭式等离子体对4～8 GHz频段范围内微波反射的作用特性,以及不同射频功率对微波反射的影响规律,并将实验测量与计算结果进行对比分析。实验表明,通过功率调节,电感耦合闭式等离子体对5.92～6.8 GHz频带电磁波具有明显的衰减作用。     

Effect of the matrix in mass spectrometry using an inductively coupled plasma

Using different types of devices, we have performed an experimental study of matrix ionization effects manifesting themselves in the method of mass spectrometry with an inductively coupled plasma. Basic laws governing these effects have been established. The composition of the analytical zone of the plasma and possible attenuation of the signal from the analyte on introduction of a matrix element due to processes occurring in the plasma and in the ion beam have been determined theoretically. A high degree of coincidence between experimental and calculated results is shown. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 5, pp. 768–774, September–October, 1998.     

高频感应等离子体流动模型与微型电推进器流场特性分析

微型射频离子推力器具有结构简单、 工作寿命长、 推力动态范围大、 性能调节响应灵敏等特点,是国际微电推进领域的研究热点之一.射频离子推力器电离室内的感性耦合放电等离子体特性和推力器的性能密切相关.为此,文章建立了低气压、小尺寸微型射频离子推力器电离室内感性耦合等离子体流体模型,开展了电磁场、流场、化学反应浓度场的多物理...     

轴向磁场下感应耦合放电模式转换的实验研究

为探究轴向磁场对纯Ar感应耦合等离子体放电模式转换的影响,设计并搭建一整套等离子体产生装置展开实验研究,引入阻抗分析法对放电模式转换进行判断,并得到了朗缪尔探针法的验证。实验发现,当气压为10 Pa时,轴向磁场强度的增加使得E-H和H-E模式转换的阈值功率增大;同时,随着轴向磁场的增强,放电中心区域的电子密度不断降低。初步分析认为,这是由于带电粒子在洛伦兹力作用下做回旋运动,导致高能电子在垂直磁场方向上的碰撞减少,降低了电子密度以及感应耦合效率。进一步分析电子能量概率函数(EEPF)发现,在E模式下,轴向磁场对电子运动的约束作用更加明显,高能电子(>27 eV)所占比例增多,电子能量分布更加均匀。     

感应耦合等离子体中和枪的电子引出特性研究

给出了一种感应耦合等离子体源的设计,用于等离子体中和枪装置.通过实验方法研究等离子体源的电子引出特性,并结合理论分析了等离子体密度随射频功率的变化关系.研究结果表明等离子体源的电子引出特性与放电腔内气压有关联性,E?H模式转换中电子密度的变化与负载的电感值相关.研究成果对等离子体中和枪的发展有重要的参考价值.     

Influence of helium metastable states on the E-H mode transition in an inductively coupled plasma

A helium (He) inductively coupled plasma (ICP) source combined with two diode laser systems with the wavelengths of 396.5 nm (2¹S–4¹P) and 1082.9 nm (2³S–2³P) was configured to investigate the influence of He metastable states on the E-H mode transition. The population densities of 2¹S and 2³S states were measured by laser absorption spectroscopy as the functions of RF power, He pressure, and the distance from RF antenna. Correlations between the E-H mode transition and the population density ratio of the 2³S metastable state to the 2¹S metastable state as well as the line intensity ratio (LIR) of the 3³D-2³S transition to the 3¹P–2¹S transition were investigated. The E-H mode transition of He ICP was analyzed by the electron impact ionization rate and it was confirmed that the 2³S metastable state plays a key role in the E-H mode transition.     

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH₄ and H₂ as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.