Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter

The instantaneous reversible soft logic upset induced by the electromagnetic interference(EMI) severely affects the performances and reliabilities of complementary metal–oxide–semiconductor(CMOS) inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal–oxide–semiconductor field-effect transistor(MOSFET) in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.     

Study of laser-induced plasma shock waves by the probe beam deflection technique

Laser probe beam deflection technique is used for the analysis of laser-induced plasma shock waves in air and distilled water. The temporal and spatial variations of the parameters on shock fronts are studied as functions of focal lens position and laser energy. The influences of the characteristics of media are investigated on the well-designed experimental setup. It is found that the shock wave in distilled water attenuates to an acoustic wave faster than in air under the same laser energy. Good agreement is obtained between our experimental results and those attained with other techniques. This technique is versatile, economic, and simple to implement, being a promising diagnostic tool for pulsed laser processing.     

Bosonized Supersymmetric Sawada–Kotera Equations: Symmetries and Exact Solutions

The Bosonized Supersymmetric Sawada–Kotera(BSSK) system is constructed by applying bosonization method to a Supersymmetric Sawada–Kotera system in this paper. The symmetries on the BSSK equations are researched and the calculation shows that the BSSK equations are invariant under the scaling transformations, the space-time translations and Galilean boosts. The one-parameter invariant subgroups and the corresponding invariant solutions are researched for the BSSK equations. Four types of reduction equations and similarity solutions are proposed. Period Cnoidal wave solutions, dark solitary wave solutions and bright solitary wave solutions of the BSSK equations are demonstrated and some evolution curves of the exact solutions are figured out.     

Stability and performance analysis of a jump linear control system subject to digital upsets

This paper focuses on the methodology analysis for the stability and the corresponding tracking performance of a closed-loop digital jump linear control system with a stochastic switching signal. The method is applied to a flight control system. A distributed recoverable platform is implemented on the flight control system and subject to independent digital upsets. The upset processes are used to stimulate electromagnetic environments. Specifically, the paper presents the scenarios that the upset process is directly injected into the distributed flight control system, which is modeled by independent Markov upset processes and independent and identically distributed(IID) processes. A theoretical performance analysis and simulation modelling are both presented in detail for a more complete independent digital upset injection. The specific examples are proposed to verify the methodology of tracking performance analysis. The general analyses for different configurations are also proposed. Comparisons among different configurations are conducted to demonstrate the availability and the characteristics of the design.     

Circuit-field coupled finite element analysis method for an electromagnetic acoustic transducer under pulsed voltage excitation

This paper presents an analytical method for electromagnetic acoustic transducers (EMATs) under voltage excitation and considers the non-uniform distribution of the biased magnetic field. A complete model of EMATs including the non-uniform biased magnetic field, a pulsed eddy current field and the acoustic field is built up. The pulsed voltage excitation is transformed to the frequency domain by fast Fourier transformation (FFT). In terms of the time harmonic field equations of the EMAT system, the impedances of the coils under different frequencies are calculated according to the circuit-field coupling method and Poynting’s theorem. Then the currents under different frequencies are calculated according to Ohm’s law and the pulsed current excitation is obtained by inverse fast Fourier transformation (IFFT). Lastly, the sequentially coupled finite element method (FEM) is used to calculate the Lorentz force in the EMATs under the current excitation. An actual EMAT with a two-layer two-bundle printed circuit board (PCB) coil, a rectangular permanent magnet and an aluminium specimen is analysed. The coil impedances and the pulsed current are calculated and compared with the experimental results. Their agreement verified the validity of the proposed method. Further- more, the influences of lift-off distances and the non-uniform static magnetic field on the Lorentz force under pulsed voltage excitation are studied.     

Solutions to Forced and Unforced Lin–Reissner–Tsien Equations for Transonic Gas Flows on Various Length Scales

The Lin–Reissner–Tsien equation is useful for studying transonic gas flows, and has appeared in both forced and unforced forms in the literature. Defining arbitrary spatial scalings, we are able to obtain a family of exact similarity solutions depending on one free parameter in addition to the model parameter holding the scalings. Numerical solutions compare favorably with the exact solutions in regions where the exact solutions are valid. Mixed wave-similarity solutions, which describe wave propagation in one variable and self-similar scaling of the entire solution, are also given,and we show that such solutions can only exist when the wave propagation is sufficiently slow. We also extend the Lin–Reissner–Tsien equation to have a forcing term, as such equations have entered the physics literature recently. We obtain both wave and self-similar solutions for the forced equations, and we are able to give conditions under which the force function allows for exact solutions. We then demonstrate how to obtain these exact solutions in both the traveling wave and self-similar cases. There results constitute new and potentially physically interesting exact solutions of the Lin–Reissner–Tsien equation and in particular suggest that the forced Lin–Reissner–Tsien equation warrants further study.     

Axisymmetric wave propagation in gas shear flow confined by a rigid-walled pipeline

The axisymmetric acoustic wave propagating in a perfect gas with a shear pipeline flow confined by a circular rigid wall is investigated. The governing equations of non-isentropic and isentropic acoustic assumptions are mathematically deduced while the constraint of Zwikker and Kosten is relaxed. An iterative method based on the Fourier–Bessel theory is proposed to semi-analytically solve the proposed models. A comparison of numerical results with literature contributions validates the present contribution. Meanwhile, the features of some high-order transverse modes, which cannot be analyzed based on the Zwikker and Kosten theory, are analyzed     

Full-transparent zone plates for THz focusing

A full-transparent zone plate(FTZP), which can reuse the wave blocked in the focusing of the Fresnel zone plate(FZP), is proposed to improve the efficiency of terahertz(THz) focusing without aberration. We find that the substrate thickness of the FTZP has a great influence on the focusing intensity, which results from the Fabry–Perot effect. The focusing efficiency of FTZPs could be about twice as high as that of FZPs, but the widths of both focus spots are comparable with the wavelength. The experimental results are in good agreement with the simulation.     

Investigation of convergent Richtmyer–Meshkov instability at tin/xenon interface with pulsed magnetic driven imploding

The Richtmyer–Meshkov instability at the interface of solid state tin material and xenon gases under cylinder geometry is studied in this paper. The experiments were conducted at FP-1 facility in Institute of Fluid Physics, China Academy of Engineering Physics(CAEP). The FP-1 facility is a pulsed power driver which could generate high amplitude magnetic field to drive metal liner imploding. Convergent shock wave was generated by impacting a magnetic-driven aluminium liner onto a inner mounted tin liner. The convergent evolution of the disturbance pre-machined onto the tin liner's inner surface was diagnosed by x-radiography. The spike amplitudes were derived from x-ray frames and were compared with linear theory.An analytical model containing material strength effect was derived and matched well to the experimental results. This sensibility of the disturbance evolution to material strength property shines light to the application of Richtmyer–Meshkov instability to infer material strength.     

Equivalent circuit model including magnetic and thermo sources for the thermo–magneto–electric coupling effect in magnetoelectric laminates

The nonlinear thermo–magneto–mechanical magnetostrictive constitutive and the linear thermo–mechanical-electric piezoelectric constitutive are adopted in this paper. The bias magnetic field and ambient temperature are equivalent to a magnetic source and a thermo source, respectively. An equivalent circuit, which contains a magnetic source and a thermo source at the input, for the thermo–magneto–electric coupling effect in magnetoelectric(ME) laminates, is established. The theoretical models of the output voltage and static ME coefficient for ME laminates can be derived from this equivalent circuit model. The predicted static ME coefficient versus temperature curves are in excellent agreement with the experimental data available both qualitatively and quantitatively. It confirms the validity of the proposed model. Then the models are adopted to predict variations in the output voltages and ME coefficients in the laminates under different ambient temperatures, bias magnetic fields, and the volume ratios of magnetostrictive phases. This shows that the output voltage increases with both increasing temperature and increasing volume ratio of magnetostrictive phases; the ME coefficient decreases with increasing temperature; the ME coefficient shows an initial sharp increase and then decreases slowly with the increase in the bias magnetic field, and there is an optimum volume ratio of magnetostrictive phases that maximize the ME coefficient.This paper can not only provide a new idea for the study of the thermo–magneto–electric coupling characteristics of ME laminates, but also provide a theoretical basis for the design and application of ME laminates, operating under different sensors.     

铁电存储器中高能质子引发的单粒子功能中断效应实验研究

利用中国原子能科学研究院的中高能质子实验平台,针对两款商用铁电存储器开展了中高能质子单粒子效应实验研究,发现其中一款器件在质子辐照下发生了单粒子翻转和单粒子功能中断.本文主要针对单粒子功能中断效应展开了后续实验研究.首先通过改变质子能量对器件进行辐照,发现单粒子功能中断截面随质子能量的提高而增加.为进一步研究器件发生单粒子功能中断的机理,利用激光微束平台开展了辅助实验,对铁电存储器的单粒子功能中断效应的敏感区域进行了定位,最后发现铁电存储器单粒子功能中断是由器件外围电路发生的微锁定导致的.     

单粒子翻转脉冲激光模拟的能量阈值的计算

 根据光的吸收机理,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点,探讨了脉冲激光单粒子效应的Monte Carlo计算模拟途径。在只考虑光电效应的简化下,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。     

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up(SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset(MCU) is the parasitic bipolar amplification,it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse.Finally, we use the electric static discharge(ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.     

稳态、瞬态X射线辐照引起的互补性金属-氧化物-半导体器件剂量增强效应研究

重点开展了稳态、瞬态X射线辐照引起的金属氧化物半导体(CMOS)器件剂量增强效应relative dose enhancement effect(RDEF)研究.通过实验给出辐照敏感参数随总剂量的变化关系,旨在建立CMOS器件相同累积剂量时Χ射线辐照和γ射线辐照的总剂量效应损伤等效关系.在脉冲X射线源dense plasma focus(DPF)装置上,采用双层膜结构开展瞬态翻转增强效应研究,获得了瞬态翻转剂量增强因子.这些方法为器件抗X射线辐照加固技术研究提供了实验技术手段. 关键词： X射线 剂量增强因子 总剂量效应 剂量率效应     

电磁脉冲对CMOS与非门的干扰和损伤效应与机理

利用Sentaurus-TCAD建立了CMOS与非门电路的二维电热模型,仿真研究了在电磁脉冲注入下,CMOS与非门电路产生的扰乱和损伤效应及其机理。结果表明,在EMP注入下,电路输出电压、内部的峰值温度呈周期性的“下降-上升”,当注入功率较大时,EMP撤销后输出电压停留在异常值,PMOS源极电流增加,温度不断上升,最终烧毁在PMOS源极,这是因为器件内部产生了闩锁效应。随着脉宽的增加, 损伤功率阈值减小而损伤能量阈值增大,通过数据拟合得到脉宽与损伤功率阈值和损伤能量阈值的关系。该结果可对EMP损伤效应进行评估并对器件级EMP抗毁伤加固设计具有指导作用。     

各向异性静态随机存储器中的多位翻转分析研究

重离子实验结果表明,具有高线性能量转移(LET)或大角度入射的快重离子导致静态随机存储器(SRAM)中的多位翻转(MBU)比例增大,甚至超过单位翻转比例。单个离子径迹中的电荷可以沿着径向扩散数个微米,被临近的灵敏区收集后引起MBU。器件灵敏区的各向异性空间布局与离子入射方向共同影响测试器件的MBU图形特征。位线接触点的纵向隔离导致横向型成为主要的两位翻转图形;"L"型和"田"型分别是主要的三位翻转和四位翻转图形。最后,对SRAM抗MBU加固设计和实验验证方法进行了讨论。     

Numerical solution to the Bloch equations:paramagnetic solutions under wideband continuous radio frequency irradiation in a pulsed magnetic field

A novel nuclear magnetic resonance(NMR) experimental scheme,called wideband continuous wave NMR(WB-CW-NMR),is presented in this article.This experimental scheme has promising applications in pulsed magnetic fields,and can dramatically improve the utilization of the pulsed field.The feasibility of WB-CW-NMR scheme is verified by numerically solving modified Bloch equations.In the numerical simulation,the applied magnetic field is a pulsed magnetic field up to 80 T,and the wideband continuous radio frequency(RF) excitation is a band-limited(0.68-3.40 GHz) white noise.Furthermore,the influences of some experimental parameters,such as relaxation time,applied magnetic field strength and wideband continuous RF power,on the WB-CW-NMR signal are analyzed briefly.Finally,a multi-channel system framework for transmitting and receiving ultra wideband signals is proposed,and the basic requirements of this experimental system are discussed.Meanwhile,the amplitude of the NMR signal,the level of noise and RF interference in WB-CW-NMR experiments are estimated,and a preliminary adaptive cancellation plan is given for detecting WB-CW-NMR signal from large background interference.     

卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析

为了分析单粒子事件对卫星光通信系统造成的影响,需要预估器件的单粒子翻转率。通过比较微分能谱方法和FOM方法,选取FOM方法估算了在不同高度和不同倾角下的单粒子翻转率。分析了质子单粒子翻转率与空间轨道的关系。提出了基于单粒子翻转率的器件可靠性指标。数值计算结果表明,在较低轨道高度和较小轨道倾角条件下,SRAM/MOS器件受单粒子翻转影响较小、可靠性较高。     

CMOS反相器内部瞬态闩锁效应的脉冲宽度效应理论模型

从基本半导体物理出发,通过求解载流子连续性方程,建立了能够定量描述引起CMOS反相器内部瞬态闩锁效应的微波脉冲功率阈值与脉冲宽度关系的解析理论模型。通过与仿真结果以及文献中实验数据的对比,验证了该理论模型的正确性。该理论模型表明,引起CMOS反相器内部瞬态闩锁效应的微波脉冲功率阈值首先随着脉冲宽度增加逐渐降低,但是存在一个明显拐点区域,当脉冲宽度超过该区域之后,引起闩锁效应的功率阈值变化不甚明显。     

基于蒙特卡洛和器件仿真的单粒子翻转计算方法

文章提出了一种基于蒙特卡洛和器件仿真的存储器单粒子翻转截面获取方法,可以准确计算存储器单粒子效应,并定位单粒子翻转的灵敏区域.基于该方法,计算了国产静态存储器和现场可编程门阵列(FPGA)存储区的单粒子效应的截面数据,仿真结果和重离子单粒子效应试验结果符合较好.仿真计算揭示了器件单粒子翻转敏感程度与器件n,p截止管区域面积相关的物理机理,并获得了不同线性能量转移(LET)值下单粒子翻转灵敏区域分布.采用蒙特卡洛方法计算了具有相同LET、不同能量的离子径迹分布,结果显示高能离子的电离径迹半径远大于低能离子,而低能离子径迹中心的能量密度却要高约两到三个数量级.随着器件特征尺寸的减小,这种差别的影响将会越来越明显,阈值LET和饱和截面将不能完全描述器件单粒子效应结果.