Characteristics of surface acoustic waves in (11$$\bar 2$$ 0)ZnO film/ R-sapphire substrate structures

(11\(\bar 2\)0)ZnO film/R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity (v _p), electromechanical coupling coefficient (k ²), temperature coefficient of frequency (TCF) and reflection coefficient (r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k ² of 4.95% in (90°, 90°, 0°) (11\(\bar 2\)0)ZnO film/R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\(\bar 2\)0)ZnO film/R-sapphire substrate has a maximum k ² of 3.86% associated with a phase velocity of 3400 m/s. And (11\(\bar 2\)0)ZnO film/R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.     

ZnO纳米薄膜及其声表面波传感器的制备与特性研究

结合RF磁控溅射和水热合成法制备ZnO纳米结构薄膜,利用XRD及SEM分析ZnO薄膜的晶体结构和形貌、XPS分析薄膜的化学组分。结果表明,在适当的条件下,所制备的ZnO薄膜为具有良好c轴取向的纳米棒状结构,且ZnO纳米棒薄膜表面吸附的氧原子及晶格的氧空位缺陷增多。利用所制备ZnO纳米棒薄膜的上述特性,将其作为气体敏感材料。分别沉积于128°YX-LiNbO₃和36°YX-LiTaO₃基片,研制多层结构的声表面波(Rayleigh波和Love波)氢气传感器,并进行室温条件下氢气的实时传感检测,结果显示所研制的Love波传感器具有更高的灵敏度,性能更优化。     

An investigation of the dependence of ZnO film on the sensitivity of Love mode sensor in ZnO/quartz structure

Love mode acoustic devices are very promising as biosensors in liquid environments because of their high sensitivity. An experimental study of Love mode sensors based on ZnO/90 degrees rotated ST-cut quartz structure with different sputtering conditions to deposit ZnO films is presented. In order to achieve sensor with higher sensitivity, the effects of sputtering substrate temperatures to deposit ZnO films on the sensitivity of viscosity and conductivity were investigated. Phase velocity, sensitivity and temperature coefficient of frequency (TCF) of Love wave devices have been studied. The Love wave sensor has higher sensitivity as sputtering ZnO films on the unheated substrate than that of on the heated substrate. The maximum sensitivity up to -18.77 x 10(-8) m(2) s kg(-1) of ZnO film with thickness of 1.8 microm for a wavelength of 40 microm is much bigger than SiO(2)/quartz structure. In this research, we report ZnO/90 degrees rotated ST-cut quartz structure of Love wave sensors with high sensitivity of viscosity and conductivity in liquid circumstance and TCF of quartz is compensated by ZnO film.     

钽酸镓镧与石英声表面波传播特性对比研究

钽酸镓镧(LGT)是近年研制出的新型压电材料。计算了这种材料在不同切向和传播方向的声表面波传播特性,并和石英晶体上相应切向和传播方向的声表面波传播特性进行了对比分析。计算结果表明这种材料的声表面波传播速度一般比石英低1000 m/s左右,和石英一样,具有零温度切向和纯模方向,但它的机电耦合系数K²却远高于石英。还对目前报道的LGT的不同材料常数进行了对比计算,计算结果表明不同材料常数的声表面波传播特性有明显的差异,其中以频率温度系数差异最大。     

MOCVD法生长SAWF用ZnO/Diamond/Si多层结构

使用等离子体辅助MOCVD系统在金刚石,硅衬底上成功地制备了氧化锌多层薄膜材料,通过两步生长法对薄膜质量进行了优化。XRD测试显示优化后的样品具有c轴的择优取向生长,PL谱测试表明样品经优化后不仅深能级发射峰消失,同时紫外发射峰增强。对优化后的样品的表面测试显示出较低的表面粗糙度。比较氧化锌多层薄膜结构的声表面波频散曲线,ZnO薄膜声表面滤波器受膜厚和衬底材料的影响较大。当ZnO薄膜较薄时,在它上面的传播速度将与衬底上的传播速度接近,与其他衬底上生长的薄膜相比,以金刚石这种快声速材料为衬底的ZnO多层薄膜结构,声表面波滤波器的中心频率将提高1倍左右。     

衬底温度对ZnO薄膜的结构和光学特性的影响

利用等离子体辅助分子束外延(P-MBE)设备在蓝宝石衬底上通过改变生长温度,制备了不同的ZnO样品.研究了衬底温度对ZnO的结构、光学和电学性质的影响.样品的晶体结构利用X射线衍射谱进行表征.X射线衍射谱表明,所有的ZnO样品都是(002)取向的六角纤锌矿结构.随着生长温度的升高,X射线的(002)衍射峰的半峰全宽逐渐...     

Transparent ZnO/glass surface acoustic wave based high performance ultraviolet light sensors

Surface acoustic wave(SAW) resonators are a type of ultraviolet(UV) light sensors with high sensitivity, and they have been extensively studied. Transparent SAW devices are very useful and can be developed into various sensors and microfluidics for sensing/monitoring and lab-on-chip applications. We report the fabrication of high sensitivity SAW UV sensors based on piezoelectric(PE) ZnO thin films deposited on glass substrates. The sensors were fabricated and their performances against the post-deposition annealing condition were investigated. It was found that the UV-light sensitivity is improved by more than one order of magnitude after annealing. The frequency response increases significantly and the response becomes much faster. The optimized devices also show a small temperature coefficient of frequency and excellent repeatability and stability, demonstrating its potential for UV-light sensing application.     

Y旋转切割石英基片上的准纵漏表面声波

在理论和实验上对Y旋转切割石英基片上的准纵漏表面声波(快速声表面波)的传播特性作了比较全面的研究。准纵漏表面声波的相速度可以达到6200m/s~7100m/s,是常规声表面波相速度的两倍,接近纵波速度。理论计算和实验结果均表明:在Y旋转切割石英基片的某些传播方向上,准纵漏表面声波的束偏向角和延迟温度系数均较小。例如,沿欧拉角(0°,155.25°,42°)方向的准纵漏表面声波的相速度和延迟温度系数的实验测量值分别为6201m/s和12.9 ppm/℃。实验还表明,放置于基片表面的液体对准纵漏表面声波的吸收不大,说明此种声波质点振动集中在传播方向(沿表面方向),具有纵波的性质。     

The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure

Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO₃ substrates by reactive rf magnetron sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly c-axis AlN films on z-cut LiNbO₃ substrates, were investigated. The phase velocity (V_P) was significantly increased by the increase of h/λ, where h is the thickness of AlN film and λ is the wavelength. However, the insertion loss (IL) of SAW filters was also increased by the increase of h/λ. Experimental results on the temperature characteristics of SAW devices are also presented.     

High frequency SAW devices based on third harmonic generation

We demonstrate the third harmonic generation in a ZnO/Si layered structure to obtain high frequency SAW devices. This configuration eliminates the need of high lithography resolution and allows easy integration of such devices and electronics on the same wafer. A theoretical study was carried out for the determination of the phase velocity and the electromechanical coupling coefficient (K²) dispersion curves of the surface acoustic waves. These results are also in agreement with those measured on a SAW filter designed for the third harmonic generation and the operating frequency is up to 2468 MHz.     

过渡金属与F共掺杂ZnO薄膜结构及磁、光特性

采用溶胶-凝胶法在玻璃衬底上制备了过渡金属元素与F共掺杂Zn_0.98-xTM_xF_0.02O (TM_x=Cu_0.02, Ni_0.01, Mn_0.05, Fe_0.02, Co_0.05)薄膜, 进而利用X射线衍射仪、扫描电子显微镜、紫外-可见透过谱、光致发光及振动样品磁强计等研究了薄膜的表面形貌、微结构、禁带宽度及光致发光(PL)和室温磁学特性. 研究表明: 掺杂离子都以替位的方式进入了ZnO晶格, 掺杂不会破坏ZnO的纤锌矿结构. 其中Zn_0.93Co_0.05F_0.02O薄膜样品的颗粒尺寸最大, 薄膜的结晶度最好且c轴择优取向明显; Zn_0.93Mn_0.05F_0.02O薄膜样品的颗粒尺寸最小, 薄膜结晶度最差且无明显的c轴择优取; Cu, Ni, Fe与F共掺杂样品的颗粒尺寸大小几乎相同. TM掺杂样品均表现出很高的透过率, 同时掺杂后的薄膜样品的禁带宽度都有不同程度的红移. PL谱观察到Zn_0.98-xTM_xF_0.02O薄膜的发射峰主要由较强的紫外发射峰和较弱的蓝光发射峰组成. Zn_0.93Mn_0.05F_0.02O薄膜样品的紫外发光峰最弱, 蓝光发射最强, 饱和磁化强度最大; 与之相反的是Zn_0.96Cu_0.02F_0.02O薄膜, 其紫外发光峰最强, 蓝光发射最弱, 饱和磁化强度最小. 结合微结构和光学性质对Zn_0.98-xTM_xF_0.02O薄膜的磁学性质进行了讨论.     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

ZnO薄膜/金刚石在不同激励条件下声表面波特性的计算与分析

本文首先以刚度矩阵法为基础, 给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式. 然后以此为工具, 分别计算了多晶ZnO(002) 薄膜/多晶金刚石和单晶ZnO(002) 薄膜/多晶金刚石的声表面波特性, 并根据计算结果及设计制作声表面波器件的要求, 对ZnO膜厚的选择进行了详细地分析. 最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求. 关键词： 声表面波 压电多层结构 有效介电常数 刚度矩阵法     

Hypersound waves at the surface of CdZnTe crystals: The role of surface orientation and scattering at twin boundaries

The patterns of propagation of gigahertz surface acoustic waves (SAWs) are obtained for cuts of CdZnTe single crystals with different crystallographic orientations. By comparing the experimental patterns with the calculated ones, the existence of at least two SAW modes, one of which is a Rayleigh mode, is demonstrated. It is shown that the anisotropy of propagation of different SAW modes makes it possible to determine the local crystallographic orientation of the CdZnTe surface and detect local imperfections of the crystal structure. Strong anisotropic scattering of the Rayleigh wave by coherent twin boundaries is found.     

Determination of elastic properties of Si/Ge superlattices and Si1-xGex films from surface acoustic modes by Brillouin scattering

Surface acoustic waves (SAW) have been measured by means of Brillouin scattering (BS) both as a function of k×h and the direction of k in the sample plane (k is the wavevector of the surface acoustic mode and h the thickness of the film). The velocity of the Rayleigh wave on sufficiently thick films (h > 4000 Å) has been experimentally found to ve uneffected by the elastic properties of the substrate material. Thus the directional dependence of the hypersonic surface wave is completely determined by the elastic properties of the layer material alone and reflects its crystallographic symmetry. The SL's can be treated as media with effective elastic constants because the wavelength of the thermally excited Rayleigh wave is much longer than the SL period. Furthermore, the angular dispersion of the SAW can be used to calculate the elastic constants of each film separately.     

The characteristics of surface acoustic waves on AlN/LiNbO3 substrates

The characteristics of surface-acoustic-wave (SAW) devices on various substrates were measured by a network analyzer in the temperature range from 0 to 80 °C. Based on the structure of IDT/AlN/LiNbO₃, it was revealed that the magnitude of the temperature coefficient of frequency (TCF) of a SAW on a LiNbO₃ substrate was significantly decreased due to the thickness increase of AlN thin film deposited on the LiNbO₃ substrate. The TCF of a SAW on an AlN/LiNbO₃ device was measured to be about -51 ppm/°C at h/λ=0.1, where h is the thickness of the AlN film and λ is the wavelength of the SAW. This indicates that the deposition of an AlN film on a LiNbO₃ substrate could improve the temperature stability, as compared with that of a SAW on a LiNbO₃ substrate (-73 ppm/°C). The SAW device on the ST-X quartz is shown to have a positive TCF as the AlN thin film is deposited on the surface of the ST-X quartz. In addition, the phase velocity (V_p) of the SAW on an AlN/LiNbO₃ substrate was significantly increased by the increase of AlN thickness (h/λ). Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +886-7/525-4199, E-mail: ycc@ee.nsysu.edu.tw     

The morphology and structural properties of InP thin films deposited by spray pyrolysis method

InP film samples were prepared by spray pyrolysis technique using aqueous solutions of InCl₃ and Na₂HPO₄, which were atomized with compressed air as carrier gas onto glass substrates at 500 °C with different thicknesses of the films. The structural properties of the samples have been determined by using X-ray diffraction (XRD). It was found that the crystal structure of the InP films is polycrystalline hexagonal. The orientations for all the obtained films are along the c-axis perpendicular to the substrate. It is observed that the crystallite sizes of the films increase with the thickness of the film up to 616 nm. The changes observed in the morphology and structural phases related to the film thickness have been discussed in detail.     

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

ZnO film is attractive for high frequency surface acoustic wave device application when it is coupled with diamond. In order to get good performance and reduce insertion loss of the device, it demands the ZnO film possessing high electrical resistivity and piezoelectric coefficient d₃₃. Doping ZnO film with some elements may be a desirable method. In this paper, the ZnO films undoped and doped with Cu, Ni, Co and Fe, respectively (doping concentration is 2.0 at.%) are prepared by magnetron sputtering. The effect of different dopants on the microstructure, piezoelectric coefficient d₃₃, and electrical resistivity of the film are investigated. The results indicate that Cu dopant can enhance the c-axis orientation and piezoelectric coefficient d₃₃, the Cu and Ni dopant can increase electrical resistivity of the ZnO film up to 10⁹ Ω cm. It is promising to fabricate the ZnO films doped with Cu for SAW device applications.     

Optoelectronic properties of SnO_2 thin films sprayed at different deposition times

This article presents the elaboration of tin oxide(SnO_2) thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction(XRD), atomic force microscopy(AFM), ultravioletvisible(UV–Vis) transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction(XRD) patterns show that SnO_2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the(110) plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO_2 thin films are found to be in a range of 3.64 e V–3.94 e V. Figures of merit for SnO_2 thin films reveal that their maximum value is about 1.15 × 10-4-1?atλ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10-2?·cm.     

半无界分层介质表面任意面源激发的弹性波场

研究了半无界层状介质自由表面任意形状的面源产生的弹性波场。首先,我们将层状介质中的传递矩阵理论从二维推向三维空间,在频率域研究了任意面源激发的三维弹性波理论问题。然后,深入研究了Rayleigh波和Love波的激发与传播特性,发现Rayleigh波和Love波的传播速度在与自由表面平行的平面内与传播方位角θ无关,但其激发强度却强烈地依赖于传播方位角θ。最后,我们具体研究了矩形源、无穷长条形源和圆盘激励出的弹性波场,并通过数值计算给出了Rayleigh波和Love波的位移指向性分布图。