Magnetic two-dimensional van der Waals materials forspintronic devices

Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.     

动力学压缩真空中的Van der Waals力

基于参数动力学过程产生的压缩效应,利用Millonni源理论方法研究了 动力学压缩真空中Van der Waals力的性质及其与真空压缩的关系。所得结果表明：Van der Waals力的性质依赖于真空压缩的程度;在一定的临界条件下,Van der Waals力由通常的 吸引性作用转化为排斥性作用。当压缩系数为零时,所得结果与通常文献完全一致。     

二维材料的转移方法

二维材料及其异质结在电子学、光电子学等领域具有潜在应用,是延续摩尔定律的候选电子材料.二维材料的转移对于物性测量与器件构筑至关重要.本文综述了一些具有代表性的转移方法,详细介绍了各个方法的操作步骤,并基于转移后样品表面清洁程度、转移所需时间以及操作难易等方面对各个转移方法进行了对比归纳.经典干、湿法转移技术是进行物理堆...     

Infrared photodetectors based on graphene van der Waals heterostructures

We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.     

Ultrafast interlayer photocarrier transfer in graphene–MoSe_2 van der Waals heterostructure

We report the fabrication and photocarrier dynamics in graphene–MoSe_2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe_2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe_2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe_2. These results illustrate the potential applications of this material in optoelectronic devices.     

二维平面和范德瓦耳斯异质结的可控制备与光电应用

自石墨烯被发现以来,二维材料因其优异的特性获得了持续且深入的探索与发展,以石墨烯、六方氮化硼、过渡金属硫化物、黑磷等为代表的二维材料相关研究层出不穷.随着二维新材料制备与应用探索的不断发展,单一材料性能的不足逐渐凸显,研究者们开始考虑采用平面拼接和层间堆垛所产生的协同效应来弥补单一材料的不足,甚至获得一些新的性能.利用二维材料晶格结构的匹配构建异质结,实现特定的功能化,或利用范德瓦耳斯力进行堆垛,将不同二维材料排列组合,从而在体系里引入新的自由度,为二维材料的性质研究和实际应用打开了新的窗口.本文从原子制造角度,介绍了二维平面和范德瓦耳斯异质结材料的可控制备和光电应用.首先简要介绍了应用于异质结制备的常见二维材料的分类及异质结的相关概念,然后从原理上分类列举了常用的表征方法,随后介绍了平面和垂直异质结的制备方法,并对其光电性质及器件应用做了简要介绍.最后,对领域内存在的问题进行了讨论,对未来发展方向做出了展望.     

从二维材料到范德瓦尔斯异质结

二维材料领域经过了十三年的蓬勃发展,涌现出一大批新材料和新技术。文章将介绍二维材料领域的发展历史,一系列具有代表性的二维材料的重要性质,以及由其衍生的范德瓦尔斯异质结的相关研究工作。     

范德华尔斯材料在转角光学中的研究进展

极化激元是光与不同极化子相互作用形成的半光半物质的准粒子,可用于亚波长尺度的光场调控,在光学成像、非线性效应增强及新型超构材料设计等领域扮演着举足重轻的角色.近年来,随着人们对转角范德华尔斯材料体系的制备工艺和物性研究的不断深入,其中许多新奇的极化激元现象也被揭示.本文综述了近年来转角范德华尔斯材料在光学领域的研究进展...     

重力场中的范德瓦耳斯气体

将地球大气近似为重力场中的范德瓦耳斯气体,在绝热过程近似下导出了大气温度、压强随高度的分布,并与理想气体近似结果进行了比较分析.     

二维材料的新奇物理及异质结的能带调控

以石墨烯为代表的层状材料具备显著区别于三维材料的新奇物理特性。更为重要的是,原子级平整的二维材料使得科学家们可以将不同的二维材料通过堆垛或者把相同的二维材料通过堆垛加扭转构成范德瓦耳斯异质结。通过层间耦合作用,可对异质结的能带结构和物理性质进行有效调控,从而衍生出单个二维材料所不具备的新奇物性。范德瓦耳斯异质结的能带调控极大地拓宽了二维材料的科学研究和应用前景。     

Strain drived band aligment transition of the ferromagnetic VS_2/C_3N van der Waals heterostructure

Exploring two-dimensional(2 D) magnetic heterostructures is essential for future spintronic and optoelectronic devices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS_2/C_3 N van der Waals(vdW) heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS_2 and C_3 N monolayers,our results indicate that a direct band gap with type-Ⅱ band alignment and p-doping characters are realized in the spin-up channel of the VS_2/C_3 N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱ and type-Ⅲ band alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.     

Observation of magnetoresistance in CrI3/graphene van der Waals heterostructures

Two-dimensional ferromagnetic van der Waals (2D vdW) heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials, and for manipulating spin degree of freedom at the limit of few atomic layers, which empower next-generation spintronic and memory devices. However, to date, the electronic properties of 2D ferromagnetic heterostructures still remain elusive. Here, we report an unambiguous magnetoresistance behavior in CrI₃/graphene heterostructures, with a maximum magnetoresistance ratio of 2.8%. The magnetoresistance increases with increasing magnetic field, which leads to decreasing carrier densities through Lorentz force, and decreases with the increase of the bias voltage. This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.     

van der Waals PtO2/MoS2 heterostructure verified from first principles

First-principles calculations are used to study the structure and optoelectronic properties of a van der Waals (vdW) heterostructure formed by transition metal dichalcogenide and dioxide monolayers, namely PtO₂/MoS₂. The calculations suggest that a two-dimensional PtO₂ monolayer can be produced by exfoliation from the layered bulk α-PtO₂ and may even survive at high temperature. The PtO₂ monolayer is very closely matched with MoS₂ to form the vdW heterostructure. With its valence-band maximum and conduction-band minimum separated in different layers, this PtO₂/MoS₂ heterostructure is proposed as a type-II heterostructure with strong adsorption of visible light. Consequently, it may be widely applicable in photocatalysis and photovoltaics.     

二维范德瓦尔斯异质结构的制备与物性研究

二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果.     

二维范德瓦尔斯异质结构的制备与物性研究

二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果.     

Increase in Axial Compressibility in a Spinning Van der Waals Gas

We investigated the adiabatic compression along the axial direction of a spinning Van der Waals gas by applying theoretical analysis and molecular dynamics (MD) simulations. Based on the analytical results, the rotation-induced compressibility increase effect is significant in a Van der Waals gas, while the attraction term in the Van der Waals equation of states (EOS) contributes significantly to the compressibility increase in a spinning system. We conducted MD simulations to the axial compression of a spinning gas, whose state is far from the ideal gas state, and further demonstrated that the rotation-induced compressibility increase effect in a dense state is robust, implying that such a phenomenon can be detected in experiments under high-energy-density conditions.     

范德瓦耳斯和他的状态方程

在物理学发展史上，范德瓦耳斯对气—液流体系统做了开创性的研究工作，建立了人类历史上第一个既能反映气、液各相性质，又能描述相交和临界现象的状态方程。范德瓦耳斯的理论成就和研究方法对热力学、统计力学和低温物理学的发展产生了重要而深远的影响。文章系统探讨了范德瓦耳斯方程产生的历史背景、科学意义和局限性，讨论了范德瓦耳斯的理论和方法对当代物理学的启发意义。     

范德瓦尔斯方程的分子平均场理论推导

利用气体分子动理论和分子平均场理论,导出了真实气体物态方程--范德瓦尔斯方程,并与统计力学严格的理论推导结果作比较,得到了反映真实气体分子作用域大小的一个较为具体的参考值.     

The rise of two-dimensional tellurium for next-generation electronics and optoelectronics

Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.     

Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept,device model,and characteristics

We propose the concept of the infrared detection and photon energy up-conversion in the devices using the integration of the graphene layer infrared detectors (GLIPs) and the light emitting diodes (LEDs) based on van der Waals (vdW) heterostructures. Using the developed device model of the GLIP-LEDs, we calculate their characteristics. The GLIP-LED devices can operate as the detectors of far- and mid infrared radiation (FIR and MIR) with an electrical output or with near-infrared radiation (NIR) or visible radiation (VIR) output. In the latter case, GLIP-LED devices function as the photon energy up-converters of FIR and MIR to NIR or VIR. The operation of GLIP-LED devices is associated with the injection of the electron photocurrent produced due to the interband absorption of the FIR/MIR photons in the GLIP part into the LED emitting NIR/VIR photons. We calculate the GLIP-LED responsivity and up-conversion efficiency as functions the structure parameters and the energies of the incident FIR/MIR photons and the output NIR/VIR photons. The advantages of the GLs in the vdW heterostructures (relatively high photoexcitation rate from and low capture efficiency into GLs) combined with the reabsorption of a fraction of the NIR/FIR photon flux in the GLIP (which can enable an effective photonic feedback) result in the elevated GLIP-LED device responsivity and up-conversion efficiency. The positive optical feedback from the LED section of the device lead to increasing current injection enabling the appearance of the S-type current-voltage characteristic with a greatly enhanced responsivity near the switching point and current filamentation.