Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现,完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带,边缘空位缺陷的存在使得纳米带能隙变小,且缺陷浓度越大,能隙越小,并发生了半导体-金属转变. 利用这些研究结果,将有助于在能带工程中实现其电子结构裁剪. 关键词： 石墨纳米带 空位缺陷 电子结构 输运性质     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现，完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带，边缘空位缺陷的存在使得纳米带能隙变小，且缺陷浓度越大，能隙越小，并发生了半导体-金属转变. 利用这些研究结果，将有助于在能带工程中实现其电子结构裁剪.     

Zigzag型边界石墨烯纳米带的电子态

在紧束缚近似下, 提出有限系统的Bloch定理方法, 解析计算了Zigzag型石墨烯纳米带的电子态和能带.研究发现, 其电子态有两类, 分别是驻波态和边缘态; 驻波态的波矢为实数, 波函数是正弦函数形式; 边缘态的波矢主要是虚数, 实数部分为零或者π/2, 波函数是双曲正弦函数形式. Zigzag型石墨烯纳米带的能带由驻波态能量和边缘态能量组成, 我们推导了边缘态的关于无限长方向波矢和能量的精确取值范围. 讨论了边缘态和驻波态的过渡点, 发现两种电子态通过不同的方式在受限波矢趋于零时关于格点位置逼近线性关系. 当受限方向也变成无限长时, 可以得到与无限大石墨烯相同的能带关系. 关键词： 紧束缚模型 Zigzag型石墨烯纳米带 边缘态     

Floquet bands and photon-induced topological edge states of graphene nanoribbons

Floquet theorem is widely used in the light-driven systems. But many 2 D-materials models under the radiation are investigated with the high-frequency approximation, which may not be suitable for the practical experiment. In this work,we employ the non-perturbative Floquet method to strictly investigate the photo-induced topological phase transitions and edge states properties of graphene nanoribbons under the light irradiation of different frequencies(including both low and high frequencies). By analyzing the Floquet energy bands of ribbon and bulk graphene, we find the cause of the phase transitions and its relation with edge states. Besides, we also find the size effect of the graphene nanoribbon on the band gap and edge states in the presence of the light.     

Band structure and edge states of star-like zigzag graphene nanoribbons

Connecting three zigzag graphene nanoribbons(ZGNRs) together through the sp~3 hybrid bonds forms a star-like ZGNR(S-ZGNR). Its band structure shows that there are four edge states at k = 0.5, in which the three electrons distribute at three outside edge sites, and the last electron is shared equally(50%) by two sites near the central site. The lowest conductance step in the valley is 2, two times higher than that of monolayer ZGNR(M-ZGNR). Furthermore, in one quasithree-dimensional hexagonal lattice built, both of the Dirac points and the zero-energy states appear in the band structure along the z-axis for the fixed zero k-point in the x-y plane. In addition, it is an insulator in the x-y plane due to band gap 4 eV, however, for any k-point in the x-y plane the zero-energy states always exist at k_z = 0.5.     

金掺杂锯齿型石墨烯纳米带的电磁学特性研究

本文采用基于密度泛函理论的第一性原理计算了金原子填充锯齿型石墨烯纳米带 (ZGNRs)中双空位结构的电磁学特性. 计算结果表明: 边缘位置是金原子的最稳定掺杂位置, 杂质原子的引入导致掺杂边缘的磁性被抑制, 不过掺杂率足够大时, 掺杂边缘的磁性反而恢复了. 金掺杂纳米带的能带结构对掺杂率敏感: 随着掺杂率的增大, 掺杂纳米带分别表现半导体特性、半金属特性以及金属特性. 本文的计算表明金原子掺杂可以调制ZGNR的磁性以及能带特性, 为后续实验起指导作用, 有利于推动石墨烯材料在自旋电子学方面的应用.     

Modulating magnetism of nitrogen-doped zigzag graphene nanoribbons

We present a study of electronic properties of zigzag graphene nanoribbons （ZGNRs） substitutionally doped with nitrogen atoms at a single edge by first principle calculations. We find that the two edge states near the Fermi level sepa- rate due to the asymmetric nitrogen-doping. The ground states of these systems become ferromagnetic because the local magnetic moments along the undoped edges remain and those along the doped edges are suppressed. By controlling the charge-doping level, the magnetic moments of the whole ribbons are modulated. Proper charge doping leads to interest- ing half-metallic and single-edge conducting ribbons which would be helpful for designing graphene-nanoribbon-based spintronic devices in the future.     

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied.The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping.Remarkably,by tuning the edge hydrogenation,it is found that the spin filter efficiency can be varied from 30%to 58%.Moreover,it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction.These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.     

掺杂三角形硼氮片的锯齿型石墨烯纳米带的磁电子学性质

利用基于密度泛函理论的第一性原理方法,研究了三角形BN片掺杂的锯齿型石墨烯纳米带(ZGNR)的磁电子学特性.研究表明:当处于无磁态时,不同位置掺杂的ZGNR都为金属;当处于铁磁态时,随着杂质位置由纳米带的一边移向另一边时,依次可以实现自旋金属-自旋半金属-自旋半导体的变化过程,且只要不在纳米带的边缘掺杂,掺杂的ZGNR就为自旋半金属;当处于反铁磁态时,在中间区域掺杂的ZGNR都为自旋金属,而在两边缘掺杂的ZGNR没有反铁磁态.掺杂ZGNR的结构稳定,在中间区域掺杂时反铁磁态是基态,而在边缘掺杂时铁磁态为基态.研究结果对于发展基于石墨烯的纳米电子器件具有重要意义.     

锯齿型石墨纳米带叠层复合结的电子输运

基于紧束缚格林函数方法,研究了两半无限长锯齿型石墨纳米带叠层复合结的电子输运性质.结果表明,层间次近邻相互作用、叠层区长度及门电压对复合结的电子透射谱有重要调制作用.层间次近邻相互作用导致复合结的透射谱关于费米能呈现非对称性,与实验结果很好相符.低于费米能第一子能区内周期性出现透射系数为0和1的台阶,呈现全反射与透射现象.随散射结长度增加,透射系数在1内周期性振荡,呈现明显的量子干涉效应.在门电压调控下,低于费米能的透射系数出现了从1到0的转变,类似于开关效应.相关结果对基于石墨烯器件的设计与应用有指导意义.     

Electronic and magnetic properties of zigzag edge graphene nanoribbons with Stone-Wales defects

The electronic and magnetic properties of zigzag graphene nanoribbons (ZGNRs) with Stone-Wales defects are studied by extensive first-principles calculations. It is shown that the asymmetry distribution of the Stone-Wales defects can induce finite magnetic moment in the defective ZGNRs. As the defect near one of the ribbon edges moving to the centre region, the magnetic moment of the defective ZGNRs gradually decreases to zero, following a transition from metal to semi-half-metal and eventually to semiconductor. In addition, by symmetrically placing an additional defect at the opposite side of the defective ZGNRs, the finite magnetic moment vanishes, and the electronic properties depend on the distance between the defect and the closer ribbon edge. These findings are robust within a wide range of defect concentration.     

N掺杂对zigzag型石墨烯纳米带的能带结构和输运性质的影响

用第一性原理研究了N掺杂zigzag型石墨烯纳米带(z-GNRs)的能带结构、透射谱和电流电压特性,研究结果表明N掺杂将使得z-GNRs的能带结构中出现能隙,材料从金属转变为半导体;随着杂质浓度的增大,相同偏压下电流明显减小,同时体系费米面附近的透射率逐渐减小;z-GNRs的长度、宽度以及N原子的替代掺杂位置均会对输运性质产生影响,在宽度较小的情况下,掺杂浓度和掺杂位置两种因素共同影响体系的输运性质. 关键词： 石墨烯纳米带 N掺杂 能带结构 输运性质     

Electronic properties of phosphorene and graphene nanoribbons with edge vacancies in magnetic field

The graphene and phosphorene nanostructures have a big potential application in a large area of today's research in physics. However, their methods of synthesis still don't allow the production of perfect materials with an intact molecular structure. In this paper, the occurrence of atomic vacancies was considered in the edge structure of the zigzag phosphorene and graphene nanoribbons. For different concentrations of these edge vacancies, their influence on the metallic properties was investigated. The calculations were performed for different sizes of the unit cell. Furthermore, for a smaller size, the influence of a uniform magnetic field was added.     

Electronic transport properties on V-shaped-notched zigzag graphene nanoribbons junctions

Using nonequilibrium Green?s functions in combination with the density functional theory, the spin-dependent electronic transport properties on V-shaped notched zigzag-edged graphene nanoribbons junctions have been calculated. The results show that the electronic transport properties are strongly depending on the type of notch and the symmetry of ribbon. The spin-filter phenomenon and negative differential resistance behaviors can be observed. A physical analysis of these results is given.     

Geometric and electronic structures of sulfur-edge-terminated zigzag edge graphene nanoribbons

The stable geometric and electronic structures of the fully and half sulfur-edge-functionalized ZGNRs at their widths of four zigzag carbon chains (S-4-ZGNRs) have been studied by using the ab initio density-functional method. It is found from our calculations that (1) under the periodic boundary condition, the two-dimensional plane structures are the most stable ground states in all the possible isomers of the S-4-ZGNRs at both 100% and 50% terminations, which are all metallic. (2) A much delocalized characteristic S-px lone-pair electron's band crossing its Fermi level appears in the case of fully S-edge-termination, which is more extended in a large energy range of over 8.0 eV, in contrast to the corresponding oxygen-px (O-px) band of the O-4-ZGNR, covering only a small energy range of 3.2 eV. In the case of half S-edge-termination, however, the S-px band is found to be much more localized, which forms two almost flat bands at about+3.0 eV above its Fermi level. (3) More interestingly, at 50% S-edge-termination, a flat portion of the π-electron edge states is found to lie a little bit below its Fermi level, making its unpolarized ground state unstable. And thus the spin-polarized antiferromagnetic (AFM) state is found to be the real ground state of the half S-4-ZGNR, which is a semiconductor with an indirect energy gap of about 0.16 eV. In the AFM ground state, there exists magnetic moments of about 0.2μ_B on each edge carbon atom, which is FM coupling along the same edge, but AFM coupling between its two edges.     

Structural, electronic, and magnetic properties of pristine and oxygen-adsorbed graphene nanoribbons

The structural, electronic and magnetic properties of pristine and oxygen-adsorbed (3,0) zigzag and (6,1) armchair graphene nanoribbons have been investigated theoretically, by employing the ab initio pseudopotential method within the density functional scheme. The zigzag nanoribbon is more stable with antiferromagnetically coupled edges, and is semiconducting. The armchair nanoribbon does not show any preference for magnetic ordering and is semiconducting. The oxygen molecule in its triplet state is adsorbed most stably at the edge of the zigzag nanoribbon. The Stoner metallic behaviour of the ferromagnetic nanoribbons and the Slater insulating (ground state) behaviour of the antiferromagnetic nanoribbons remain intact upon oxygen adsorption. However, the local magnetic moment of the edge carbon atom of the ferromagnetic zigzag ribbon is drastically reduced, due to the formation of a spin-paired C-O bond.     

Tunable thermoelectric properties in bended graphene nanoribbons

The ballistic thermoelectric properties in bended graphene nanoribbons(GNRs) are systematically investigated by using atomistic simulation of electron and phonon transport. We find that the electron resonant tunneling effect occurs in the metallic–semiconducting linked ZZ-GNRs(the bended GNRs with zigzag edge leads). The electron-wave quantum interference effect occurs in the metallic–metallic linked AA-GNRs(the bended GNRs with armchair edge leads).These different physical mechanisms lead to the large Seebeck coefficient S and high electron conductance in bended ZZGNRs/AA-GNRs. Combined with the reduced lattice thermal conduction, the significant enhancement of the figure of merit ZT is predicted. Moreover, we find that the ZTmax(the maximum peak of ZT) is sensitive to the structural parameters. It can be conveniently tuned by changing the interbend length of bended GNRs. The magnitude of ZT ranges from the 0.15 to 0.72. Geometry-controlled ballistic thermoelectric effect offers an effective way to design thermoelectric devices such as thermocouples based on graphene.     

BN链掺杂的石墨烯纳米带的电学及磁学特性

基于密度泛函理论第一性原理系统研究了BN链掺杂石墨烯纳米带(GNRs)的电学及磁学特性, 对锯齿型石墨烯纳米带(ZGNRs)分非磁态(NM)、反铁磁态(AFM)及铁磁性(FM)三种情况分别进行考虑. 重点研究了单个BN链掺杂的位置效应. 计算发现: BN链掺杂扶手椅型石墨烯纳米带(AGNRs) 能使带隙增加, 不同位置的掺杂, 能使其成为带隙丰富的半导体. BN链掺杂非磁态ZGNR的不同位置, 其金属性均降低, 并能出现准金属的情况; BN链掺杂反铁磁态ZGNR, 能使其从半导体变为金属或半金属(half-metal), 这取决于掺杂的位置; BN链掺杂铁磁态ZGNR, 其金属性保持不变, 与掺杂位置无关. 这些结果表明: BN链掺杂能有效调控石墨烯纳米带的电子结构, 并形成丰富的电学及磁学特性, 这对于发展各种类型的石墨烯基纳米电子器件有重要意义. 关键词： 石墨烯纳米带 BN链掺杂 输运性质 自旋极化     

Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons

Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS₂) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS₂ nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena.