An improved GGNMOS triggered SCR for high holding voltage ESD protection applications

Developing an electrostatic discharge(ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor(CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor(GGNMOS) transistor triggered silicon-controlled rectifier(SCR)structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.     

Dy3+对Tb3+激活硅酸盐氟氧闪烁玻璃发光性能的影响

采用高温熔融法制备了Dy3+或Tb3+单掺和Dy3+/Tb3+共掺硅酸盐氟氧闪烁玻璃。通过对傅里叶变换红外光谱、透射光谱、光致激发和发射光谱、X射线激发发射光谱及荧光衰减曲线的分析,研究Dy3+与Tb3+之间的能量传递关系以及Dy3+对Tb3+激活硅酸盐氟氧闪烁玻璃发光性能的影响。实验结果表明：Dy3+/Tb3+共掺硅酸盐氟氧闪烁玻璃具有较高的密度和良好的可见区透过率,玻璃的网络结构是由[SiO₄]四面体和[AlO₄]四面体连接构成。在紫外光激发时,Dy3+单掺玻璃的发光源于Dy3+的4F_9/2→6H_15/2(483 nm),6H_13/2(576 nm)的跃迁发射,而Tb3+单掺玻璃的发光则源于Tb3+的5D₄→7F₆(489 nm),7F₅(544 nm),7F₄(586 nm)和7F₆(623 nm)的跃迁发射。对于Dy3+/Tb3+共掺玻璃,发射光谱则主要由Tb3+的荧光发射组成。通过对不同波长紫外光激发的发射光谱分析发现,Dy3+/Tb3+共掺闪烁玻璃中存在多种形式的能量传递。在以Dy3+的特征激发452 nm为激发波长时,Tb3+单掺玻璃的发光很弱。但随着Dy3+的引入,通过4F_9/2(Dy3+)→5D₄(Tb3+)的能量传递,Tb3+发光得到敏化增强。Dy3+/Tb3+共掺玻璃的发光强度随着Dy₂O₃含量的增多而增强,Dy₂O₃含量为1 mol%时达到最大,更高Dy₂O₃含量的样品由于Dy3+的浓度猝灭,减少了向Tb3+的能量传递,发光强度减弱。当激发波长减小到350 nm时,Dy3+和Tb3+均被激发到更高的能级6P_7/2(Dy3+)和5L₉(Tb3+),此时除了4F_9/2(Dy3+)→5D₄(Tb3+)的能量传递外,还出现了5D₄(Tb3+)→4F_9/2(Dy3+)的能量回传。Dy3+掺杂浓度较低时,Dy3+→Tb3+能量传递作用较强,Tb3+发光得到敏化增强。随着Dy₂O₃含量的增多,Tb3+→Dy3+能量传递作用增强。当Dy₂O₃含量超过0.4 mol%时,Tb3+→Dy3+能量传递强于Dy3+→Tb3+能量传递,减少了Tb3+的辐射跃迁发光,因此Dy3+/Tb3+共掺玻璃的发光强度开始减弱。由于Gd3+向Dy3+或Tb3+均可进行有效的能量传递,因此在以Gd3+的特征激发274 nm为激发光时,Dy3+/Tb3+共掺玻璃中出现了Dy3+和Tb3+对Gd3+传递能量的竞争。随着Dy₂O₃含量的增多,Tb3+所获得的能量不断减少,同时伴随着Tb3+→Dy3+能量回传和Dy3+之间的无辐射交叉弛豫作用,Dy3+/Tb3+共掺玻璃的发光强度不断减弱。对Dy3+/Tb3+共掺闪烁玻璃中Tb3+的5D₄→7F₅荧光衰减曲线分析还发现,随着Dy₂O₃含量的增多,Tb3+的荧光寿命从2.24 ms缩短到1.15 ms,曲线从单指数形式变为双指数形式,进一步证明玻璃中存在5D₄(Tb3+)→4F_9/2(Dy3+)的能量回传。X射线激发发射光谱显示,Dy3+的引入对Tb3+激活闪烁玻璃的辐射发光具有很强的负面影响,而这种负面影响不足以通过Dy3+→Tb3+能量传递来弥补,因此Dy3+/Tb3+共掺玻璃的辐射发光强度随着Dy₂O₃含量的增多而不断减弱。由此可见,在Tb3+激活硅酸盐氟氧闪烁玻璃中,不宜将Dy3+作为敏化剂,用于增强Tb3+的发光。     

Energy distributions of ions produced by electron-stimulated desorption

We have measured the initial kinetic energy distributions of ions produced by electron bombardment of various oxides and halides. The instrument used allows ions directly ejected from the sample surface to be distinguished from ions formed by electron impact in the gas phase. Singly and multiply charged positive ions of species present in the matrix as anions and cations were desorbed by high energy ( 11 keV) electron impact. Directly desorbed positive halogen ions show a narrow, low energy peak, consistent with conventional models of electron stimulated desorption (ESD). In addition, some of the cation species exhibited similar narrow energy spectra. Charge states up to +6 were observed for the halides; with the exception of F²⁺ and Cl²⁺, multiple charge states were due to electron impact ionization of desorbed neutrals. Charge states up to +4 were seen for silicon from electron-bombarded SiO₂; energy distributions of Si⁺, Si²⁺ and Si³⁺ showed that these species were desorbed directly from the surface. The energy distributions of O⁺ and O²⁺ ions ejected from SiO₂ are relatively wide, compared to the energy distribution of Si⁺ ions. In contrast, O⁺ ions ejected from TiO₂ have a much narrower energy distribution, like those observed for the halogen ions.     

ScF3，NaScF4，(NH4)2NaScF6的可控合成与上转换发光性能的研究

钪基氟化物化学性质稳定、声子能量低、无辐射弛豫概率较低,是一种新型高效的基质材料,并且Sc3+半径较小,能与多种氨羧络合剂形成稳定的螯合物,因而具有更加奇特的物理和化学性质,近年来,成为许多科学家研究的热点。以聚乙烯二胺(PEI)作为表面活性剂,采用水热法在反应温度为200 ℃时成功制备了ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+,(NH₄)₂NaScF₆∶Yb3+/Er3+纳米上转换发光材料。通过X射线衍射仪(XRD)、透射电镜(TEM)、扫描电镜(SEM)和荧光光谱仪对所制备样品的晶相、形貌和发光特性进行了研究,结果显示：通过改变反应物NH₄F和Ln3+的比例(NH₄F/Ln3+=1∶1,2∶1,2.5∶1,3∶1,4∶1,6∶1,10∶1,20∶1,30∶1,40∶1,50∶1)实现了对样品产物、晶相、形貌的控制。当NH₄F/Ln3+为2.5∶1时,生成了纯立方相的ScF₃;在NH₄F/Ln3+为4∶1时,生成了六角相的NaScF₄;在NH₄F/Ln3+为40∶1时,生成了一种纯立方相的新型基质材料(NH₄)₂NaScF₆,样品结晶度高,形貌均一,有正方形片状和足球状多面体;在980 nm红外激光的激发下,不同NH₄F/Ln3+比例生成的样品发光呈现桔黄→桔红→绿→黄绿等多种颜色的变化。实验表明仅改变NH₄F一种原料的用量,就可以生成ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+和(NH₄)₂NaScF₆∶Yb3+/Er3+ 三种不同的产物,说明NH₄F的用量对产物的生成有决定性的作用,对晶相的转换、颜色的调控亦有重要影响。     

Stimulated desorption from CO chemisorbed on Cr(110)

Electron stimulated desorption (ESD) experiments using a time-of-flight pulse counting method are reported for molecular CO chemisorbed on the Cr(110) surface at 90 K. Consistent with previous qualitative observations, negligible CO⁺ and O⁺ desorption signals were measured from the ₁CO overlayer which saturates at 1/4 monolayer. For θ_CO > 0.25, a terminally-bonded (₂CO) binding mode is populated in addition to the existing ∝₁CO binding mode and the ion yield increases sharply. For ₂CO, both O⁺ and CO⁺ ions are observed; the CO⁺ ions desorb with characteristically lower kinetic energies than O⁺ ions. Near saturation coverages of CO(ads), an observed decrease in the O⁺ yield is attributed to adsorbate-adsorbate interactions which reduce the ion desorption probability, as seen in ESD studies of terminally-bonded CO on other metals. These results are considered in the context of two possible models proposed for the ₁CO binding state and related ESD observations for CO chemisorbed on Fe(001) and potassium-promoted Ru(001).     

Real-time monitoring of SiO2/Si(1 1 1) interlayer etching by Brewster-angle reflectometry

A transitory etching regime after SiO₂ dissolution and before bulk Si(1 1 1) etching in neutral NH₄F solutions was monitored by in situ Brewster-angle reflectometry (BAR). An observed intermediate increase of the BAR reflectance signal is attributed to a fast dissolution of a stressed/strained interlayer beneath the SiO₂/Si(1 1 1) interface. Similar effects were observed on thin thermal oxides (18.2 nm), grown on float zone silicon, as well as on ultra-thin native oxides (1.2 nm) on Czochralsky silicon. Native oxide covered samples showed an increased surface roughness in the course of interlayer dissolution while the surface is progressively covered with compounds of fluorinated silicon. The etch rate, determined by atomic force microscopy (AFM) and compared to the etch rate of bulk silicon, is increased by a factor of four. In the limit of extended etching, the known low etch rates for silicon in 40% NH₄F are observed. Structural and chemical properties of the interfacial layer were analyzed by synchrotron radiation photoelectron spectroscopy (SRPES) which confirmed the presence of Si^3+/4+ valence states throughout the interlayer and by near open-circuit potential (N-OCP) dark current measurements. As a result, oxide etch rates in NH₄F in the pH-range 7–8 as well as the silicon interlayer depth can be assessed by in situ BAR.     

Fe:Mg:LiNbO3晶体电子结构和吸收光谱的第一性原理研究

基于密度泛函理论的第一性原理, 研究了LiNbO₃晶体以及不同Mg浓度的Fe:Mg:LiNbO₃晶体的电子结构和吸收光谱. 研究结果显示: 掺铁铌酸锂晶体的杂质能级由Fe 的3d轨道和O的2p轨道贡献, 禁带宽度为2.845 eV; 对于Mg, Fe共掺样品, Mg的浓度小于或等于阈值时, 禁带宽度分别为2.901 和2.805 eV; 掺铁铌酸锂晶体的吸收谱在2.3和2.6 eV处分别存在一个吸收峰, 其强度因Mg的浓度不同而发生变化. 研究结果还表明, 不同浓度的Mg对晶体内Fe²⁺和Fe³⁺的浓度以及占位产生了不同的影响. 还提出了光电子的形成不应单独考虑铁的轨道电子态, 而应同时考虑与铁成键的氧的轨道电子态的观点.     

A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

A novel 4H-SiC merged P-I-N Schottky (MPS) with floating back-to-back diode (FBD), named FBD-MPS, is proposed and investigated by the Sentaurus technology computer-aided design (TCAD) and analytical model. The FBD features a trench oxide and floating P-shield, which is inserted between the P+/N-(PN) junction and Schottky junction to eliminate the shorted anode effect. The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently. The FBD reduces not only the V_turn to suppress the snapback effect but also the V_on at bipolar operation. The results show that the snapback can be completely eliminated, and the maximum electric field (E_max) is shifted from the Schottky junction to the FBD in the breakdown state.     

Active long pulse shaping technique of pulsed CO2 laser using multi-pulse discharge control

We describe the pulse forming of pulsed CO₂ laser using multi-pulse superposition technique. Various pulse shapes, high duty cycle pulse forming network (PFN) are constructed by time sequence. This study shows a technology that makes it possible to make various long pulse shapes by activating SCRs of three PFN modules consecutively at a desirable delay time with the aid of a PIC one-chip microprocessor. The power supply for this experiment consists of three PFN modules. Each PFN module uses a capacitor, a pulse forming inductor, a SCR, a high voltage pulse transformer, and a bridge rectifier on each transformer secondary. The PFN modules operate at low voltage by driving the primary of HV pulse transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence.We investigated various long pulse shapes as different trigger time intervals of SCRs among three PFN modules. As a result, we could obtain laser beam with various pulse shapes and durations from about 250 to 1000 μs.     

InGaZnO薄膜晶体管背板的栅极驱动电路静电释放失效研究

本文通过解析阵列基板栅极驱动(gate driver on array, GOA)电路中发生静电释放(electro-static discharge,ESD)的InGaZnO薄膜晶体管(InGaZnO thin-film transistor, IGZO TFT)器件发现:栅极Cu金属扩散进入了SiN_x/SiO_2栅极绝缘层;源漏极金属层成膜前就发生了ESD破坏;距离ESD破坏区域越近的IGZO TFT,电流开关比越小,直到源漏极与栅极完全短路.本文综合IGZO TFT器件工艺、GOA区与显示区金属密度比、栅极金属层与绝缘层厚度非均匀性分布等因素,采用ESD器件级分析与系统级分析相结合的方法,提出栅极Cu:SiN_x/SiO_2界面缺陷以及这三层薄膜的厚度非均匀分布是导致GOA电路中沟道宽长比大的IGZO TFT发生ESD失效的关键因素,并针对性地提出了改善方案.     

Cu,Fe掺杂LiNbO_3晶体电子结构和光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理对Cu,Fe单掺及共掺LiNbO_3晶体的电子结构和光学性质进行了计算.结果显示:Cu,Fe单掺杂LiNbO_3晶体禁带内均产生了杂质能级,主要由Cu3d,Fe3d轨道及O 2p轨道贡献;共掺LiNbO_3晶体禁带内出现了双能级结构,深能级由Cu3d和O2p轨道贡献,浅能级由Fe3d和O2p轨道贡献.Cu,Fe单掺和共掺LiNbO_3晶体带隙依次缩小,在可见光区的光吸收明显增强.共掺LiNbO_3在445和630nm左右分别表现出一个宽吸收峰,比单掺LiNbO_3晶体表现出更好的光吸收性质.研究表明,Fe占Nb位比Fe占Li位的双掺样品在双光存储应用中更有优势;同时,浓度比[Fe2+]/[Fe3+]值的适当降低有助于这种优势的形成.     

TiO_2薄膜的硼掺杂对TiO_2/p~+-Si异质结器件电致发光的增强

利用磁控溅射在重掺硼硅(p+-Si)衬底上分别沉积TiO2薄膜和掺硼的TiO2(Ti O2∶B)薄膜,并经过氧气氛下600℃热处理,由此形成相应的TiO2/p+-Si和TiO2∶B/p+-Si异质结。与Ti O2/p+-Si异质结器件相比,TiO2∶B/p+-Si异质结器件的电致发光有明显的增强。分析认为:TiO2∶B薄膜经过热处理后,B原子进入TiO2晶格的间隙位,引入了额外的氧空位,而氧空位是TiO2/p+-Si异质结器件电致发光的发光中心,所以上述由B掺杂引起的氧空位浓度的增加是TiO2∶B/p+-Si异质结器件电致发光增强的原因。     

Formation of luminescent (NH4)2SiF6 phase from vapour etching-based porous silicon

In this paper we describe the formation of a luminescent (NH₄)₂SiF₆ via porous silicon (PS) obtained from HNO₃/HF vapour etching (VE) silicon (Si) substrates. It was found that at specific conditions, PS transforms in a luminescent thick white powder (WP) layer. Scanning electron microscopy (SEM) revealed that the WP has a coral-like structure. It was also found that PS persists as an intermediate layer between the Si substrate and the WP, and seems to be the seed that transforms into the WP. SEM microanalysis show that the WP is essentially composed of silicon (Si), nitrogen (N) and fluorine (F). Fourier transform infrared (FTIR) spectroscopy investigations show that this WP contains SiF₆²⁻ and NH₄⁺ ions and N---H chemical bonds. X-ray diffraction (XRD) patterns of the WP confirm that a (NH₄)₂SiF₆ cubic phase is concerned. SEM microanalyses show an excess of Si in the WP matrix. FTIR spectroscopy and XRD analysis reveal the presence of crystalline Si particles and SiO_x, both originating from the excess of Si. The (NH₄)₂SiF₆ WP phase emits an intense photoluminescence (PL) band, shifted towards higher energies as compared to the starting PS layer. The possible origin and mechanism of the luminescence emission was discussed taking into account the ability of small SiO_x-surrounded Si particles to emit PL at rather high energy. The wide range variation of the thickness of the (NH₄)₂SiF₆ WP may be easily used for the grooving of Si wafers.     

Dielectrics for passivation of planar InP/InGaAs diodes

We have investigated dielectrics for passivating planar InP or InGaAs photodiodes: thermally evaporated Al₂O₃ and SiO, sputtered Si₃N₄ and SiO₂ and also SiO₂ using chemical vapour deposition. The measured bulk and field-effect properties of all dielectrics excluding sputtered SiO₂ were suitable for this application. In planar InGaAs diodes with Cd diffused or Mg implanted p⁺-region a disordered dielectric/semiconductor surface led to high reverse current densities above 1 mA/cm². In InP diodes with p⁺-diffusion and dielectrics exhibiting positive flatband voltages, e.g. Si₃N₄ and Al₂O₃, reverse current densities of 10 μA/cm² were measured probably caused by a slight inversion of the semiconductor surface. With a SiO or CVD-SiO₂ passivating layer on n-InP lowest leakage current densities (10 nA/cm²) were achieved. Very low dark-current planar photodiodes InP/InGaAsP/InGaAs have been fabricated using SiO passivation (30 nA/cm²).     

基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究

通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).     

Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (R_on,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N⁺-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N_d) and reshape the electric field distribution. The highly doped N⁺-layer under the high-K dielectric acts as a low resistance path to reduce the R_on,sp. The new device with the high breakdown voltage (BV), the low R_on,sp, and the excellent figure of merit (FOM=BV²/R_on,sp) is obtained. The BV of HKLR LDMOS is 534 V, R_on,sp is 70.6 mΩ·cm², and FOM is 4.039 MW·cm^-2.     

N2-Ar��Ƶ�ŵ���浪���ĵ�����������ģ��

N2-Ar射频放电等离子体广泛应用于微电子工业的刻蚀、氮化物薄膜的制备及金属表面氮化等技术领域。开发了N2-Ar混合气体容性耦合射频放电PIC/MC自洽模型,模型主要描述了e-,N2+,N+,Ar+等主要带电粒子的行为分布。等离子体的碰撞过程分别考虑了带电粒子(e-,N2+,N+,Ar+)与基态中性N2分子和Ar原子的21种碰撞反应过程。模拟结果表明,在纯N2及N2-Ar混合气体容性耦合射频放电中,各种带电粒子的数密度都在等离子体区达到最大值,且氮分子离子为主要粒子;在N2容性耦合射频放电中,加入10%氩气时,N+平均能量有所增加,在射频电极处两种氮离子(N2+,N+)高能粒子所占比例增加。本研究对认识N2-Ar射频放电等离子体过程微观机理具重要意义。     

Eu3+/Dy3+共掺Sr3Y2(BO3)4荧光粉的发光性质研究

稀土掺杂发光材料一直是科研领域研究的热点,被广泛应用于白光LED、温度传感、显示显像、新能源和激光等领域。基质的结构对于稀土离子光致发光特性有非常重要的影响,在众多发光基质材料中,硼酸盐具有透光范围宽、光学损伤阈值高、较好的热稳定性和化学稳定性等优点。碱土-稀土金属硼酸盐Sr₃Y₂(BO₃)₄具有出色的光学性能,对其发光性能的研究具有重要意义。稀土离子Eu³⁺具4f⁶电子层,是一种典型的下转换发光中心离子,常被选作红色发光材料的激活剂。Dy³⁺具4f⁹电子层,也是一种典型的下转换发光中心离子,在紫外光激发下,在蓝色光区和橙色光区有较强的荧光发射。采用高温固相法合成了Sr₃Y₂(BO₃)₄∶Eu³⁺/Dy³⁺荧光粉,通过XRD和SEM对样品的结构和形貌进行了表征,XRD结果表明,1 0...     

染料敏化太阳能电池Sm~(3+)掺杂TiO_2下转换光阳极的制备及性能

用溶胶-水热法制备了Sm3+掺杂的Ti O2粉体(Ti O2∶Sm3+),将其按不同质量分数掺杂到P25基体中,制备了具有下转换功能的光阳极,并将其用于染料敏化太阳能电池中,提高了电池的光电性能。荧光光谱显示,Ti O2∶Sm3+粉体可以将紫外光转换为570~700 nm的可见光。当下转换光阳极中Ti O2∶Sm3+粉体的掺杂质量分数为80%时,短路电流密度达到13.12 m A/cm2,与纯P25光阳极相比,提高了26.5%,转换效率也提高了23.5%。     

大气压空气纳秒脉冲阵列式线-线SDBD等离子体的电学及发射光谱特性研究

提出了一种阵列式线-线沿面介质阻挡放电结构,利用双极性高压纳秒脉冲电源,在大气压空气中激励产生了相对大面积的放电等离子体。其中,高压电极、地电极均为圆柱形金属,放电反应器由20组相间排列的阵列式线型高压电极和套有介质管的阵列式线型地电极组成。利用电压探头、电流探头、示波器等测量了放电电压和放电总电流,并计算得出了放电的实际电流。利用光纤、光栅光谱仪、CCD等测量了波长范围在300～440 nm和766～778 nm的发射光谱,即氮分子第二正带N₂ (C3Π_u→B3Π_g)包括Δν= +1, 0, -1, -2, -3、氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g),N₂ (B3Π_g→A3Σ+_u)和O (3p5P→3s5S₂)的发射光谱。比较了氮分子第二正带N₂ (C3Π_u→B3Π_g)的各个振动峰和各个活性物种的发射光谱强度,以及这些发射光谱强度随着脉冲峰值电压的变化。测量了N₂(C3Π_u→B3Π_g, 0-0)的二次、三次衍射光谱,与原始光谱在转动带、背景光谱等方面进行了比较,并计算了二次衍射和原始光谱之间的峰值比。利用氮分子第二正带N₂ (C3Π_u→B3Π_g, Δν=+1, 0, -1, -2)和氮分子离子第一负带N+₂ (B2Σ+_u→X2Σ+_g, 0-0)模拟了等离子体的转动温度和振动温度,对模拟结果进行了比较,并研究了脉冲峰值电压对等离子体振动温度和转动温度的影响。通过测量放电的电压和计算得到的放电电流发现,当脉冲峰值电压为22 kV,脉冲重复频率为150 Hz时,阵列式线-线沿面介质阻挡放电的放电电流在正脉冲、负脉冲两个方向上均可达75 A左右。通过诊断放电等离子体的发射光谱发现,在测量的波长范围内,放电产生的活性物种主要有氮分子第二正带N₂ (C3Π_u→B3Π_g)、氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g),N₂ (B3Π_g→A3Σ+_u)和O (3p5P→3s5S₂)。在脉冲峰值电压22～36 kV的变化范围内,氮分子第二正带N₂(C3Π_u→B3Π_g, 0-0)的发射光谱强度始终保持最强,N₂ (B3Π_g→A3Σ+_u)次之,而氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g)和O (3p5P→3s5S₂)的发射光谱强度较弱。同时,当脉冲峰值电压升高时,氮分子第二正带N₂ (C3Π_u→B3Π_g)的所有振动峰,以及氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g),N₂ (B3Π_g→A3Σ+_u)和O (3p5P→3s5S₂)的发射光谱强度均随之升高。通过比较氮分子第二正带N₂(C3Π_u→B3Π_g, 0-0)的原始、二次衍射、三次衍射光谱发现,二次、三次衍射光谱的转动带更清晰,但三次衍射光谱的背景更强,因此氮分子第二正带N₂(C3Π_u→B3Π_g)的二次衍射光谱更有利于模拟等离子体的转动温度。通过比较模拟得到的振动温度和转动温度发现,氮分子第二正带N₂ (C3Π_u→B3Π_g, Δν=-2)在N₂ (C3Π_u→B3Π_g)四个谱带Δν=+1, 0, -1, -2中最适于模拟等离子体振动温度,而利用氮分子离子第一负带N+₂ (B2Σ+_u→X2Σ+_g,0-0)模拟得到的等离子体转动温度要比N₂ (C3Π_u→B3Π_g, Δν=-2)的模拟结果高约10～15 K。同时,当脉冲峰值电压升高时,由N₂ (C3Π_u→B3Π_g, Δν=-2)和N+₂ (B2Σ+_u→X2Σ+_g, 0-0)模拟得到等离子体的转动温度均出现了略微上升的趋势,而利用N₂ (C3Π_u→B3Π_g, Δν=-2)模拟得出的振动温度则略微下降。