Nonlinear dynamics of radio frequency plasma processing reactorspowered by multifrequency sources

The source frequency has a strong influence on plasma characteristics in RF discharges. Multiple sources at widely different frequencies are often simultaneously used to separately optimize the magnitude and energy of ion fluxes to the substrate. In doing so, the sources are relatively independent of each other. These sources can, however, nonlinearly interact if the frequencies are sufficiently close. The resulting plasma and electrical characteristics can then be significantly different from those due to the sum of the individual sources. In this paper, a plasma equipment model is used to investigate the interaction of multiple frequency sources in capacitively and inductively coupled RF excited plasmas. In capacitively coupled systems, we confirmed that the plasma density increases with increasing frequency but also found that the magnitude of the DC bias and DC sheath voltage decreases. To produce a capacitively coupled discharge having a high plasma density with a large DC bias, we combined low and high frequency sources. The plasma density did increase using the dual frequency system as compared to the single low frequency source. The sources, however, nonlinearly interacted at the grounded wall sheath, thereby shifting both the plasma potential and DC bias. In inductively coupled plasmas (ICP), the frequency of the capacitive substrate bias does not have a significant effect on electron temperature and density. The DC bias and DC sheath voltage at the substrate were, however, found to strongly depend on source frequency. By using additional RF sources at alternate locations in ICP reactors, it was found that the DC bias at the substrate was varied without significantly changing other plasma parameters, such as the substrate sheath potential     

硅烷低温等离子体阶跃响应的仿真(1)

了解含有负离子的低温等离子体的过渡特性，在等离子体控制过程中，尤其在选择性等离子 体腐蚀工艺和改善电荷堆积等现象中是十分重要的课题.对电源驱动频率为1356MHz，压力 为05Torr(05×10333Pa)状态下的硅烷（SiH₄）低温等离子体的阶跃响应 进行仿真. 当电源电压振幅从550V阶跃减小到350V时，硅烷低温等离子体表现出以数千RF周期为周期的振荡现象，等离子体中的带电粒子的运动变化决定了振荡现象的产生和振荡周期等特性. 关键词： 迁移率 扩散系数 阶跃响应 等离子体振荡     

电子回旋共振-射频双等离子体沉积氧化硅薄膜过程中的射频偏压效应

本文利用六甲基乙硅氧烷(HMDSO)和氧气(O2)为反应气体,利用微波电子回旋共振-射频双等离子体化学气相沉积法沉积氧化硅薄膜,并利用发射光谱对等离子体特性进行原位诊断.研究表明,RF偏压对氧化硅薄膜沉积速率和薄膜中的化学键结构产生有意义的影响.小的直流自偏压会略微提高沉积速率;但随着直流自偏压的增加,离子轰击效应及刻蚀作用加强,薄膜的沉积速率下降.在13.56MHz和400kHz两个不同射频频率条件下所沉积的薄膜中,O和Si的比例基本相同,均超过2∶1;但400kHz射频偏压下薄膜中的碳成分比例比13.56MHz条件下的要高得多.这可以归因为高的射频偏压的应用不仅可增强离子轰击效应,而且与体等离子体相互作用,使高活性的氧原子增多;而低频偏压的作用主要是增强离子轰击效应.     

ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

微晶硅薄膜沉积过程中的等离子体光学与电学特性研究

采用空间分辨光发射谱和傅里叶变换功率阻抗分析仪研究了衬底偏压和辉光功率对微晶硅薄膜沉积过程中的等离子体光学与电学特性的影响.研究表明：在交流偏压(AC)、悬浮(floating)、负直流加交流(-DC＋AC)偏压下,Hα发射强度空间分布规律相似,平均鞘层长度相等;正直流加交流(＋DC＋AC)偏压和接地(grounded)时Hα发射强度显著增强,并存在双峰(double layers)现象.增大功率,Hα发射强度也随着增大,并在17W与22W之间产生跳变.电学测试发现功率增大,等离子体电阻降低,电抗降低,电 关键词： 等离子体 光发射谱 衬底偏压 辉光功率     

Characteristics of anodic glow pulsed plasma

Using the triple Langmuir probe, the characteristics of the glowing plasma adjacent to a constricted anode is obtained. The glow discharge is generated by applying a train of high voltage pulses between the constricted anode and cylindrical cathode with a pulse frequency of 2 kHz at 50% duty cycle. The axial plasma characteristics along the central line of the anode shows crest and trough resembling a double layer. The bulk plasma showed uniform electron density outside the glow. The visual images show an enhancement in the volume of the glow consistent with the discharge current. The mechanism behind the particular double layer characteristics around the anode is being explained in detail.     

高压快速离化半导体开关及其脉冲压缩特性

 介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50 Ω负载下,将一输入脉冲幅度1.7 kV 、脉宽4 μs、重频2 kHz高压脉冲,通过FID压缩成脉冲幅度1 985 V、脉宽90 ns、重频2 kHz的高压脉冲。     

溅射工艺参数对硅薄膜微结构影响的Raman分析

为了解决碳化硅难以进行光学加工的问题,该文采用射频磁控溅射方法,在碳化硅反射镜坯体上沉积与碳化硅具有相近热膨胀系数且易于进行光学加工的硅薄膜。利用拉曼光谱(Raman)对衬底温度、射频功率、衬底偏压等溅射工艺条件对硅膜微结构的影响进行了分析。研究发现：随着衬底温度的升高,薄膜的晶化率先增大后减小;衬底偏压的增加不利于薄膜有序结构的形成;射频功率对薄膜微结构的影响比较复杂,随着功率的升高,薄膜晶粒尺寸减小,晶化率降低,当射频功率进一步升高时,薄膜中有序团簇尺寸和晶化率逐渐升高。但过高的射频功率反而不利于薄膜的晶化。     

大气压氖气介质阻挡放电脉冲等离子射流特性

采用自行研制的低造价、小体积、可产生幅值0~35 kV、重复频率1 kHz的高压s脉冲电源,设计了一套以大气压氖气为工作气体的介质阻挡放电（DBD）等离子体射流源,通过测量并计算放电过程中的电压-电流波形、拍摄放电图像、光谱分析等手段,对电压幅值、气体流速对氖气等离子体射流特性的影响进行了研究。结果表明:s脉冲电源激励下大气压氖气DBD能产生锥状的等离子射流且其等离子强度适中;s脉冲电源电压幅值的快速上升,可在放电空间瞬间施加高的过电压,能有效促进放电功率、电子密度、电子激发温度和射流长度的增加;工作气体流速的增加使得放电功率、电子激发温度和电子密度减小,而射流长度变化很小;一定条件下,能形成长距离的射流。     

重复频率脉冲功率系统触发器设计

根据重复频率脉冲功率系统中大功率开关器件氢闸流管的触发原理,针对选用的氢闸流管VE4147的触发要求,设计了直流偏压-150 V、空载电压2 000 V、脉冲电流10 A、脉冲宽度800 ns、重复频率10 kHz的触发器。设计中着重从增强抗干扰能力、降低功耗、改善散热等方面进行考虑,保证触发器以10 kHz的重复频率持续工作,已经应用于100 kV/2 kHz高压脉冲电源、70 kV/10 kHz氢闸流管老练平台、150 kV/1 kHz可调脉宽电晕等离子体驱动源等多个重复频率脉冲功率系统中。     

沿面放电中的辉光和赝辉光放电

利用沿面放电发生器装置，在流动氩气中实现了大气压辉光放电。放电电流波形表现为外加电压每半周期只有一个电流脉冲。驱动电压频率是60kHz时，放电电流脉冲持续时间大于1微秒。氩气中的辉光放电，功率消耗随着外加电压增加或者是气压减小而增大，这种关系可以用汤生击穿理论定性解释。与此对比，大气压空气中的放电电流波形为外加电压每半周期放电为许多脉冲，每个电流脉冲为高频阻尼振荡，这就是赝辉光放电。大气压空气中的赝辉光放电可能是由于气体的流光击穿造成的。     

射频等离子体鞘层动力学模型

在流体力学方程的基础上建立了一种自洽的无碰撞射频等离子体鞘层动力学模型.这种自洽性包含两个方面:一方面,由于考虑了瞬时鞘层电场对离子运动的影响,因此该模型适用于描述任意频率段的射频鞘层演化过程;另一方面,在模型中采用等效电路方法来自洽地确定极板上的瞬时电位与瞬时鞘层厚度之间的关系.采用数值方法模拟出鞘层的瞬时厚度及极板的瞬时电位变化、鞘层内离子密度和电场强度等物理量的时空变化.结果表明,当射频场的频率小于或等于离子等离子体频率时,离子流密度明显地随时间变化 关键词： 射频 离子 鞘层 流体力学     

脉冲放电射流辅助射频辉光放电研究

通过实验研究了脉冲放电射流辅助下大气压氦气射频辉光放电的电学和光学特性。采用组合电极结构,在射频放电前段增加脉冲电极,脉冲放电产生的射流以等离子体子弹形式注入射频放电区域,主要研究脉冲射流辅助射频放电的电流电压曲线、最低放电维持电压、放电强度和空间结构时空分布。研究结果表明:等离子体子弹经过射频放电区域后,由于等离子体子弹引入的活性粒子,会使射频放电区域等离子体强度增强;而射频放电最低维持电压也从0.93 kV降低至0.43 kV。     

Numerical study on discharge characteristics influenced by secondary electron emission in capacitive RF argon glow discharges by fluid modeling

A one-dimensional(1D) fluid model of capacitive RF argon glow discharges between two parallel-plate electrodes at low pressure is employed. The influence of the secondary electron emission on the plasma characteristics in the discharges is investigated numerically by the model. The results show that as the secondary electron emission coefficient increases,the cycle-averaged electric field has almost no change; the cycle-averaged electron temperature in the bulk plasma almost does not change, but it increases in the two sheath regions; the cycle-averaged ionization rate, electron density, electron current density, ion current density, and total current density all increase. Also, the cycle-averaged secondary electron fluxes on the surfaces of the electrodes increase as the secondary electron emission coefficient increases. The evolutions of the electron flux, the secondary electron flux and the ion flux on the powered electrode increase as the secondary electron emission coefficient increases. The cycle-averaged electron pressure heating, electron Ohmic heating, electron heating, and ion heating in the two sheath regions increase as the secondary electron emission coefficient increases. The cycle-averaged electron energy loss increases with increasing secondary electron emission coefficient.     

��������ƫ���о��Ǿ�̼��Ĥ�����Ϳ�ʴ����

利用在线椭偏仪对非晶碳氢膜进行了光学常数、沉积率和刻蚀率的测量。在无直流负偏压或偏压较小时,薄膜呈现聚合物结构,折射率和消光系数较小;当增加直流负偏压时,薄膜的折射率和消光系数显著提高,所成膜为硬质非晶碳氢膜。在以CH4作为气源进行沉积时,随着偏压的增加,沉积率先升高再降低,在偏压为-100V时,沉积率为最大。H2/N2(30%N2)的混合气体的刻蚀率要比单独用H2作为刻蚀气体的刻蚀率要大。对于CH4/N2(30%N2),在偏压从0V增加到300V过程中,在大约50V时,基底上的薄膜有一个从沉积到刻蚀的转化过程。     

Plasma doping dosimetry

Plasma immersion ion implantation (PIII) is a large-area doping technique that can provide very high implant current at very low implant energy. Multiple ion species, plasma conditions, and implanter current-voltage waveforms in PIII lead to an exponential implant profile which is different from conventional implant profiles. A methodology is developed for using in situ measurements of the implanter current (I) and implant voltage (V) to derive an energy spectrum for a single implant pulse. The advantage of this technique is that a per-pulse profile may be determined experimentally, even in the presence of substrate etching, without any need for an implant model. If the ion species concentrations in the plasma are known, the energy spectrum found from the ion current and voltage waveforms can be used to construct a per-pulse implant profile. If the ion species distribution is not known a priori for a multispecies plasma, secondary ion mass spectroscopy (SIMS) data from an implanted sample can be used to estimate the ion species distribution and calibrate the IV-generated profile within a factor of two. Data from 1-5 kV, 2.5-5 kHz BF₃ PIII implants are used to demonstrate the concept. The implant profile for a single pulse can then be used to project the final implant profile and total implanted dose as a function of implant time, Pm pulse frequency, and substrate etching. In this work, an estimated secondary electron yield function is used to separate the total implant current into ion and secondary electron current components. The 25% dose variation error introduced by this effective secondary electron yield function could be avoided in a system which can measure ion current directly     

级联型高压重复频率微秒脉冲源的研制

针对等离子体的应用,基于级联型电压叠加技术研制了一种最高输出电压为20 kV的高压微秒脉冲源,该电源由40个相同的电源模块组成,其单个模块电压等级为500 V,降低了对器件的绝缘耐压要求。电源的输出电压值在0~20 kV之间可调;重复频率在0~10 kHz之间、脉宽在0~30 μs之间可调;该电源的上升沿和下降沿均在1 μs以内。模块化的设计提高了电源的冗余容错能力。将该电源作为产生等离子体的激励源时,其输出的高压脉冲波形稳定,且根据负载对输出高压波形的要求不同,该电源可以方便地进行调节。     

大气压双频氦气放电等离子体特性的数值研究

用一维流体模型研究了大气压双频氦气放电等离子体的特性。数值模拟的结果表明,在单、双频放电中,随着应用电压的增加,电子密度和放电电流都增加。相对于单频放电,双频放电中低频源的耦合效应使得放电中的电流以及电子密度降低。随着低频源电压峰值的增加,电子密度降低,离子通量,电子损失能量以及电子吸收能量均降低;但电子温度和电势随着低频源电压峰值的增加而增加。在相同低频源电压下,随着高频源电压的增加离子流非线性增加。     

����ѹ˫Ƶ�����ŵ�����������Ե���ֵ�о�

Based on one dimensional fluid model, the characteristics of helium plasma discharge driven by dual frequency at atmospheric pressure were studied. The results show that the electron density and discharge current increase with power voltage both in single frequency discharge and dual frequency discharge. In comparison with single frequency discharge, the discharge current and electron density in dual frequency discharge are lowered due to the coupling of low frequency source. As the voltage of low frequency source increases, the electron density, ion flux, electron energy dissipation, as well as electron heating decrease, whereas electron temperature and potential increase. As the voltage of high frequency source increases, the ion flux nonlinearly increases at the same voltage of low frequency source.     

金刚石薄膜负偏压形核的边缘效应

 在微波等离子体化学气相沉积装置中，研究了金刚石薄膜在Si (100)面上的负偏压形核行为，结果表明，偏压大小对金刚石的形核均匀性有显著影响，而甲烷浓度主要影响形核时间，对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时，形核行为存在明显的边缘效应，即在偏压值低于-150 V时，硅片边缘金刚石核密度急剧降低，远低于硅片中央；在甲烷浓度比较低时，硅片边缘核密度要高于中间。研究表明，造成这种现象的主要原因是硅片下的钼支撑架发射电子所致，过量的原子H对金刚石的形核是不利的。