Complex alloying effect on thermoelectric transport properties of Cu_2Ge(Se_(1-x)Te_x)_3

To enhance the thermoelectric performance of Cu_2GeSe_3, a series of Te-alloyed samples Cu_2Ge(Se_(1-x)Te_x)_3 are synthesized and investigated in this work. It is found that the lattice thermal conductivity is reduced drastically for x = 0.1 sample, which may be attributed to the point defects introduced by alloying. However, for samples with x ≥ 0.2, the lattice thermal conductivity increases with increasing x, which is related to a less distorted structure. The structure evolution,together with the change in carrier concentration, also leads to a systemically change in electrical properties. Finally, a z T of 0.55@750 K is obtained for the sample with x = 0.3, about 62% higher than that for the pristine sample.     

Sn-based type-VIII single-crystal clathrates with a large figure of merit

Single-crystal samples of type-VIII Ba 8 Ga 16 x Cu x Sn 30 (x=0,0.03,0.06,0.15) clathrates were prepared using the Sn-flux method.At room temperature the carrier density,n,is 3.5-5×10～(19)cm～3 for all the samples,the carrier mobility,μ H,increases to more than twice that of Ba 8 Ga 16 Sn 30 for all the Cu doping samples,and consequently the electrical conductivity is enhanced distinctly from 1.90×10～4 S/m to 4.40×10～4 S/m,with the Cu composition increasing from x=0 to x=0.15.The Seebeck coefficient,α,decreases slightly with the increases in Cu composition.The κ values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x=0 and x=0.03.The lattice thermal conductivity,κ L,decreases from 0.59 W/mK for x=0 to 0.50 W/mK for x=0.03 at 300 K.The figure of merit for x=0.03 reaches 1.35 at 540 K.     

Thermoelectric properties of lower concentration K-doped Ca_3Co_4O_9 ceramics

The tuning of electron and phonon by ion doping is an effective method of improving the performances of thermoelectric materials. A series of lower concentration K-doped Ca_(3-x)K_xCo_4O_9(x = 0, 0.05, 0.10, 0.15) polycrystalline ceramic samples are prepared by combining citrate acid sol-gel method with cold-pressing sintering method. The single-phase compositions and plate-like grain morphologies of all samples are confirmed by x-ray diffraction and field emission scanning electron microscope. The effects of lower concentration K doping on the thermoelectric properties of the material are evaluated systematically at high temperatures(300–1026 K). Low concentration K doping causes electrical conductivity to increase up to 23% with little effect on the Seebeck coefficient. Simultaneously, the thermal conductivity of K-doped sample is lower than that of the undoped sample, and the total thermal conductivity reaches a minimum value of approximately1.30 W·m~(-1)·K~(-1), which may be suppressed mainly by the phonon thermal conduction confinement. The dimensionless figure-of-merit ZT of Ca_(2.95)K_(0.05)Co_4O_9 is close to 0.22 at 1026 K, representing an improvement of about 36% compared with that of Ca_3Co_4O_9, suggesting that lower concentration K-doped Ca_3Co_4O_9 series materials are promising thermoelectric oxides for high-temperature applications.     

Synthesis and thermoelectric properties of Mn-doped AgSbTe₂ compounds

Polycrystalline p-type Ag 0.9 Sb 1.1 x Mn x Te 2.05(x = 0.05,0.10,and 0.20) compounds have been prepared by a combined process of melt-quenching and spark plasma sintering.The sample composition of Ag 0.9 Sb 1.1 x Mn x Te 2.05 has been specially designed in order to achieve the doping effect by replacing part of Sb with Mn and to present the uniformly dispersed Ag 2 Te phase in the matrix by adding insufficient Te,which is beneficial for optimizing the electrical transport properties and enhancing the phonon scattering effect.All the samples have the NaCl-type structure according to our X-ray powder diffraction analysis.After the treatment of spark plasma sintering,only the sample with x = 0.20 has a small amount of MnTe 2 impurities.The thermal analysis indicates that a tiny amount of Ag 2 Te phase exists in all these samples.The presence of the MnTe 2 impurity with high resistance and high thermal conductivity leads to the deteriorative thermoelectric performance of the sample with x = 0.20 due to the decreased electrical transport properties and the increased thermal conductivity.In contrast,the sample with x = 0.10 exhibits enhanced thermoeletric properties due to the Mn-doping effect.A dimensionless thermoelectric figure of merit of 1.2 is attained for the sample with x = 0.10 at 573 K,showing promising thermoelectric properties in the medium temperature range.     

Synthesis and thermoelectric properties of Mn-doped AgSbTe2 compounds

Polycrystalline p-type Ag 0.9 Sb 1.1 x Mn x Te 2.05（x = 0.05,0.10,and 0.20） compounds have been prepared by a combined process of melt-quenching and spark plasma sintering.The sample composition of Ag 0.9 Sb 1.1 x Mn x Te 2.05 has been specially designed in order to achieve the doping effect by replacing part of Sb with Mn and to present the uniformly dispersed Ag 2 Te phase in the matrix by adding insufficient Te,which is beneficial for optimizing the electrical transport properties and enhancing the phonon scattering effect.All the samples have the NaCl-type structure according to our X-ray powder diffraction analysis.After the treatment of spark plasma sintering,only the sample with x = 0.20 has a small amount of MnTe 2 impurities.The thermal analysis indicates that a tiny amount of Ag 2 Te phase exists in all these samples.The presence of the MnTe 2 impurity with high resistance and high thermal conductivity leads to the deteriorative thermoelectric performance of the sample with x = 0.20 due to the decreased electrical transport properties and the increased thermal conductivity.In contrast,the sample with x = 0.10 exhibits enhanced thermoeletric properties due to the Mn-doping effect.A dimensionless thermoelectric figure of merit of 1.2 is attained for the sample with x = 0.10 at 573 K,showing promising thermoelectric properties in the medium temperature range.     

Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates(Eu/Ba)_8Ga_(16)Sn_(30) Prepared by Ga Flux Method

Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping.Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content,the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m~(-1)K~(-2) at 480 K, and the highest ZT achieved is 0.87 near the temperature of 483 K.     

Structural stabilities and electrical properties of Ba_8Ga_(16-x)Cu_xSn_(30) single crystals under high temperatures

Single crystalline samples of type-I and type-VIII Ba_8Ga_(16-x)Cu_xSn_(30)(x = 0,1) clathrates are prepared by the Snflux method.Effects of Cu-doping on stability and electrical properties of Ba8Ga16Sn30 single crystal are explored by first-principle and experiment.All samples are heated to different high temperatures and maintained at these temperatures for 120 min and then cooled to room temperature to explore their structural stabilities.Results from DTA and powder xray diffraction analysis indicate that type-I Ba_8Ga_(16)Sn_(30) structure is transformed into type-VIII phase after the sample has been heated to 185℃.Type-VIII BGS is stable during heating and cooling,but type-VIII Ba_8Ga_(15)CuSn_(30) decomposes into Sn and Ba(Ga/Sn)_4 during cooling.Meanwhile,the electrical properties of type-I samples are measured,their electrical conductivities are enhanced,and the Seebeck efficient is reduced with Cu substitution.The type-I samples after phase transformations show the electrical characteristics of type-VIII samples.     

Synthesis and thermoelectric properties of Nd-single filled p-type skutterudites

We report the synthesis of Nd-filled and Fe substituted p-type Ndx Fe_(3.2)Co_(0.8)Fe_(3.2)Co_(0.8)Sb_(12)(x=0.5,0.6,0.7,0.8,and 0.9)skutterudites by the solid-state reaction method.The influences of Nd filler on the electrical and thermal transport prop-erties are investigated in a temperature range from room temperature to 850 K.A lowest lattice thermal conductivity of 0.88 W·m~(-1)·K~(-1)is obtained in Nd0.8Fe_(3.2)Co_(0.8)Fe_(3.2)Co_(0.8)Sb_(12)at 673 K,which results from the localized vibration modes of fillers and the increase of grains boundaries.Meanwhile,the maximum power factor is 2.77 m W·m~(-1)·K~(-2)for the Nd_(0.9)Fe_(3.2)Co_(0.8)Fe_(3.2)Co_(0.8)Sb_(12)sample at 668 K.Overall,the highest dimensionless figure of merit z T=0.87 is achieved at 714 Kfor Nd_(0.9)Fe_(3.2)Co_(0.8)Fe_(3.2)Co_(0.8)Sb_(12).     

Significant role of nanoscale Bi-rich phase in optimizing thermoelectric performance of Mg_3Sb_2

Mg_3Sb_(1.5)Bi_(0.5)-based alloys have received much attention, and current reports on this system mainly focus on the modulation of doping. However, there lacks the explanation for the choice of Mg_3Sb_(1.5)Bi_(0.5) as matrix. Here in this work,the thermoelectric properties of Mg_3Sb_(2-x)Bi_x(0.4 ≤ x ≤ 0.55) compounds are systematically investigated by using the first principles calculation combined with experiment. The calculated results show that the band gap decreases after Bi has been substituted for Sb site, which makes the thermal activation easier. The maximum figure of merit(ZT) is 0.27 at 773 K,which is attributed to the ultra-low thermal conductivity 0.53 W·m~(-1)·K~(-1) for x = 0.5. The large mass difference between Bi and Sb atoms, the lattice distortion induced by substituting Bi for Sb, and the nanoscale Bi-rich particles distributed on the matrix are responsible for the reduction of thermal conductivity. The introduction of Bi into Mg_3Sb_2-based materials plays a vital role in regulating the transport performance of thermoelectric materials.     

Thermoelectric enhancement in triple-doped strontium titanate with multi-scale microstructure

Strontium titanate(SrTiO_3) is a thermoelectric material with large Seebeck coefficient that has potential applications in high-temperature power generators.To simultaneously achieve a low thermal conductivity and high electrical conductivity,polycrystalline SrTiO_3 with a multi-scale architecture was designed by the co-doping with lanthanum,cerium,and niobium.High-quality nano-powders were synthesized via a hydrothermal method.Nano-inclusions and a nano/microsized second phase precipitated during sintering to form mosaic crystal-like and epitaxial-like structures,which decreased the thermal conductivity.Substituting trivalent Ce and/or La with divalent Sr and substituting pentavalent Nb with tetravalent Ti enhanced the electrical conductivity without decreasing the Seebeck coefficient.By optimizing the dopant type and ratio,a low thermal conductivity of 2.77 W·m~(-1)·K~(-1) and high PF of 1.1 mW·m~(-1)·K~(-2) at 1000 K were obtained in the sample co-doped with 5-mol% La,5-mol% Ce,and 5-mol% Nb,which induced a large ZT of 0.38 at 1000 K.     

含硫宽禁带Ga2Te3基热电半导体的声电输运特性

目前对宽禁带半导体热电材料的研究开始升温, 原因是本征情况下宽禁带半导体往往具有低的热导率和高的Seebeck系数. Ga₂Te₃ 是一类带有缺陷的宽禁带半导体, 其在临界温度680± 10 K和757± 10 K处会参与共析转变和包晶反应, 因此会产生反应热. 本次工作采用少量的S元素等电子替换Ga₂Te₃中的Te元素, 观察到在临界温度附近热焓的变化, 但没有相变发生. 受热焓变化的影响这类材料在临界温度附近出现了较活跃的声电输运行为, 具体表现为热容和Seebeck系数(α)明显增大及热扩散系数(热导率)和电导率下降. 例, 对于x=0.05的材料, 其α值从596 K 时的376.3(μV·K^-1)迅速增大到695 K时的608.2(μV·K^-1), 然后又随温度升高到764 K时迅速降低到213.8(μV·K^-1). 在596 K到812 K范围, Seebeck系数和电导率几乎随温度均呈Z字形变化. 这些输运行为的变化揭示了在Ga₂Te₃基半导体中声子和载流子的临界散射特点, 这种临界散射特征对以后的继续研究具有重要的参考价值.     

Ga掺杂对Cu_3SbSe_4热电性能的影响

采用熔融-淬火方法制备了Cu_(2.95)Ga_xSb_(1-x)Se_4(x=0,0.01,0.02和0.04)样品,系统地研究了Ga在Sb位掺杂对Cu_3SbSe_4热电性能的影响.研究结果表明,少量的Ga掺杂(x=0.01)可以有效提高空穴浓度,抑制本征激发,改善样品的电输运性能.掺Ga样品在625 K时功率因子达到最大值10μW/cm·K~2,比未掺Ga的Cu_(2.95)SbSe_4样品提高了约一倍.但是随着Ga掺杂浓度的进一步提高,缺陷对载流子的散射增强,同时载流子有效质量增大,导致载流子迁移率急剧下降.因此Ga含量增加反而使样品的电性能恶化.在热输运方面,Ga掺杂可以有效降低双极扩散对热导率的贡献,同时掺杂引入的点缺陷对高频声子有较强的散射作用,因此高温区的热导率明显降低.最终该体系在664 K时获得最大ZT值0.53,比未掺Ga的样品提高了近50%.     

Thermoelectric performance of XI2 (X = Ge,Sn, Pb) bilayers

We study the thermal and electronic transport properties as well as the thermoelectric (TE) performance of three two-dimensional (2D) XI₂ (X=Ge, Sn, Pb) bilayers using density functional theory and Boltzmann transport theory. We compared the lattice thermal conductivity, electrical conductivity, Seebeck coefficient, and dimensionless figure of merit (ZT) for the XI₂ monolayers and bilayers. Our results show that the lattice thermal conductivity at room temperature for the bilayers is as low as ~1.1 W·m^{-1·K-1-1.7 W}·m^{-1·K-1, which is about 1.6 times as large as the monolayers for all the three materials. Electronic structure calculations show that all the} XI₂ bilayers are indirect-gap semiconductors with the band gap values between 1.84 eV and 1.96 eV at PBE level, which is similar as the corresponding monolayers. The calculated results of ZT show that the bilayer structures display much less direction-dependent TE efficiency and have much larger n-type ZT values compared with the monolayers. The dramatic difference between the monolayer and bilayer indicates that the inter-layer interaction plays an important role in the TE performance of XI₂, which provides the tunability on their TE characteristics.     

Mg掺杂n型Sn基Ⅷ型单晶笼合物的结构及电传输特性

本文采用Sn自熔剂法,制备Mg掺杂Sn基单晶笼合物Ba₈Ga_16-XMg_XSn₃₀ （0 ≤ X ≤ 1.5）,并对其结构及电传输性能进行研究. 结果表明所制备化合物为具有空间群I43 m的Ⅷ型单晶笼合物,随Mg掺杂量的增加,对应化合物的熔点略有升高,晶格常数减小,掺杂样品中填充原子Ba的实际含量低于理想值8.0,其在十二面体空洞中的占有率约为0.93（Mg的名义含量X=1.5时）. 所有样品均表现为n型传导,Mg的掺入对材料的能带结构有一定影响,Mg掺杂后,样品的载流子浓度降低,Seebeck系数的绝对值、电阻率增加,Mg的名义含量X=1.5时,样品的功率因子在430 K附近取得最大值1.26×10^-3 W·m^-1·K^-2. 关键词： Ⅷ型笼合物 n型传导 单晶     

锐钛矿金红石的高温原位X射线衍射研究

对TiO₂粉末进行了空气和真空条件下从室温到1200℃的加热原位X射线衍射实验, 得到了空气和真空条件下微米级锐钛矿颗粒转变为金红石的起始温度分别为850℃ 和855℃; 分别修正了空气条件下锐钛矿在(27–850℃)范围和金红石在(900–1200℃) 范围内的晶胞参数和真空条件下锐钛矿在(27–850℃)范围和金红石在(950–1200℃) 范围的晶胞参数, 从而得到了晶胞参数随温度变化的关系, 得到了锐钛矿和金红石在空气中和真空中的热膨胀系数, 并总结了热膨胀系数随温度变化的规律. 室温下锐钛矿在空气条件下的热膨胀系数为 α_a=4.55063×10^-6/℃, α_c=7.7543×10^-6/℃, β=16.85836×10^-6/℃; 真空下为 α_a=4.69429×10^-6/℃, α_c=9.02850×10^-6/℃, β=18.69688×10^-6/℃. 室温下, 金红石在空气条件下的热膨胀系数为 α_a=6.81243×10^-6/℃, α_c=8.71644×10^-6/℃, β=22.22178×10^-6/℃; 真空条件下为 α_a=6.05834×10^-6/℃, α_c= 8.39280×10^-6/℃, β=20.52362×10^-6/℃. 关键词： 2')" href="#">TiO₂ 原位X射线衍射 相转变 热膨胀     

红色长余辉材料Zn3(PO4)2：Mn2+,Ga3+的合成及光谱性质

采用高温固相法合成α、β和γ-Zn₃(PO₃)₂:Mn²⁺,Ga³⁺(ZPMG),XRD分析表明,高温合成过程中淬火条件有利于β相的形成,退火条件有利于γ相的形成。三种磷光粉的激发光谱分别位于246nm(α)、234nm(β和γ)的宽带谱。α相的发射光谱为位于508nm的锐线谱,β和γ相的发射光谱均存在两个谱带,分别位于508nm的绿色光谱区和616nm的红色光谱区。两种发射均归属为Mn²⁺的⁴T₁(⁴G)→⁶A_1g(⁶S)跃迁,但是由于Mn²⁺在Zn₃(PO₃)₂结构中的配位数不同,故发光颜色及强度均不同。对于余辉发射,只能观察到红色余辉光谱。     

Oxygen ion conductivity of La_(0.8)Sr_(0.2)Ga_(0.83)Mg_(0.17-x)Co_xO_(3-δ) synthesized by laser rapid solidification

Materials La0.8Sr0.2Ga0.83Mg0.17-xCoxO3-δ with x = 0, 0.05, 0.085, 0.10, and 0.15 are synthesized by laser rapid solidification. It is shown that the samples prepared by laser rapid solidification give rise to unique spear-like or leaf-like microstructures which are orderly arranged and densely packed. Their electrical properties each show a general dependence of the Co content and the total conductivities of La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3-δ prepared by laser rapid solidification are measured to be 0.067, 0.124, and 0.202 S·cm -1 at 600, 700, and 800℃, respectively, which are much higher than by conventional solid state reactions. Moreover, the electrical conductivities each as a function of the oxygen partial pressure are also measured. It is shown that the samples with the Co content values ≤ 8.5 mol% each exhibit basically ionic conduction while those for Co content values ≥ 10 mol % each show ionic mixed electronic conduction under oxygen partial pressures from 10 -16 atm (1 atm = 1.01325×10 5 Pa) to 0.98 atm. The improved ionic conductivity of La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3-δ prepared by laser rapid solidification compared with by solid state reactions is attributed to the unique microstructure of the sample generated during laser rapid solidification.     

超宽禁带半导体β-Ga_2O_3及深紫外透明电极、日盲探测器的研究进展

β-Ga_2O_3是一种新型的超宽禁带氧化物半导体,禁带宽度约为4.9 eV,对应日盲区,对波长大于253 nm的深紫外一可见光具有高的透过率,是天然的日盲紫外探测及深紫外透明电极材料.本文介绍了Ga_20_3材料的晶体结构、基本物性与器件应用,并综述了β-Ga_2O_3在深紫外透明导电电极和日盲紫外探测器中的最新研究进展.Sn掺杂的Ga_2O_3薄膜电导率可达到32.3 S/cm,透过率大于88%,但离商业化的透明导电电极还存在较大差距.在日盲紫外探测器应用方面,基于异质结结构的器件展现出更高的光响应度和更快的响应速度,ZnO/Ga_2O_3核/壳微米线的探测器综合性能最佳,在-6 V偏压下其对254 nm深紫外光的光响应度达1.3×10~3A/W,响应时间为20μs.     

Ca2+掺杂对CdO多晶热电性能的影响

以CaCO₃作为Ca²⁺源, 利用传统固相烧结法制备了Cd_1-xCa_xO (x=0, 0.01, 0.03, 0.05) 多晶块体样品并研究了Ca²⁺掺杂对CdO高温热电性能的影响. CaCO₃的掺入会导致CdO多晶载流子浓度降低, 使Cd_1-xCa_xO的电阻率ρ和塞贝克系数的绝对值|S|增大、电子热导率κ_e减小. 同时, 在CdO中掺入CaCO₃会引入点缺陷和气孔并可抑制CdO晶粒长大、晶界增多, 从而增加了对声子的散射, 使样品的声子热导率κ_p减小. 由于总热导率的大幅降低, Cd_0.99Ca_0.01O多晶样品在1000 K时的热电优值ZT可达0.42, 比本征CdO提高了约27%, 为迄今n型氧化物热电材料报道的最好结果之一.