A cold thermionically emitting dusty air plasma formed by radiativeheating of graphite particulates

Formation of an atmospheric pressure dusty air plasma is explored experimentally in this paper. The plasma is created by seeding an air flow with graphite particles and irradiating the particulates with a focused CO₂ laser beam. The graphite particles are, thus, heated to thermionically emitting temperatures, and average particle temperatures and average particle number densities are measured. The presence of charges is inferred both from these measured quantities using a simple theoretical transient model, and experimentally by applying a dc bias across the irradiated region. It is found that an electron density of ~6.7 × 10⁵ cm^-3 (6.7 × 10¹¹ m^-3) can be produced at steady state in the presence of O₂. This value can be increased to 3.6 × 10⁷ cm^-3 (3.6 × 10¹³ m ^-1) in the ideal case where an electron attachment to O₂ is suppressed and where a lower work function particulate is used     

Flashboard plasma characterization using spectroscopy

The plasma produced by a 10 cm×6 cm planar flashboard has been investigated by emission spectroscopy. The plasma composition, density, and temperature have been determined with time and space resolution using measurement of the relative intensity of spontaneous emission in different atomic and ionic transitions together with calculations based on a collisional-radiative equilibrium model. The (1-2)×10¹³ cm^-3 and (3-4) eV plasma flows away from the flashboard surface at a speed of about 10 cm/μs. A 1.7 cm/μs transverse velocity has been obtained from the Doppler width of an emission line     

Experimental study of CF4 conical theta pinch plasmaexpanding into vacuum

Langmuir probe, photodiode, and optical multichannel analyzer (OMA) measurements have been made on a pulsed CF₄ conical theta-pinch plasma. A cloud of CF₄ was puffed into a conical theta-pinch coil, converted to plasma, and propelled into the vacuum region ahead of the expanding gas cloud. At a position 67 cm away from the conical theta-pinch coil, the plasma arrived in separate packets that were about 20 μs in duration. The average drift velocity of these packets corresponded to an energy of about 3 eV. The OMA measurements showed that the second packet contained neutral atomic fluorine as well as charged particles. The electron temperature and ion density in the second packet were 2.0 eV and 1.5×10¹³ cm^-3, respectively. The electron temperature and ion density in the wake plasma were 8.3 eV and 4×10¹¹ cm^-3 , respectively. This device can be used for plasma processing or as a laboratory test of numerical and analytical models of the expansion of plasma into vacuum     

Observation of Raman forward scattering and electron accelerationin the relativistic regime

Raman forward scattering (RFS) is observed in the interaction of a high intensity (>10¹⁸ W/cm²) short pulse (<1 ps) laser with an underdense plasma (n_e~10¹⁹ cm ^-3). Electrons are trapped and accelerated up to 44 MeV by the high-amplitude plasma wave produced by RFS. The laser spectrum is strongly modulated by the interaction, showing sidebands at the plasma frequency. Furthermore, as the quiver velocity of the electrons in the high electric field of the laser beam becomes relativistic, various effects are observed which can be attributed to the variation of electron mass with laser intensity     

Production of cold CN molecules by photodissociating ICN precursors in brute-force field

We theoretically investigate the production of cold CN molecules by photodissociating ICN precursors in a brute-force field. The energy shifts and adiabatic orientation of the rotational ICN precursors are first investigated as a function of the external field strength. The dynamical photofragmentation of ICN precursors is numerically simulated for cases with and without orienting field. The CN products are compared in terms of their velocity distributions. A small portion of the CN fragments are recoiled to near zero speed in the lab frame by appropriately selecting the photo energy for dissociation. With a precursor ICN molecular beam of ～ 1.5 K in rotational temperature, the production of low speed CN fragments can be improved by more than 5 times when an orienting electrical field of 100 k V/cm is present. The corresponding production rate for decelerated fragments with speeds ≤ 50 m/s is simulated to be about ～2.1×10~(-4) and CN number densities of 10~(8) –10~(10) cm~(-3) can be reached with precursor ICN densities of ～10~(12) –10~(14) cm~(-3) from supersonic expansion.     

Current filamentation of strongly preionized high pressure glowdischarges in Ne/Xe/HCl mixtures

The formation of intense current filaments, destroying the homogeneity of the active laser volume, limits the energy extraction from XeCl-lasers. Using time-resolved spectrally integrated pictures, the morphology and temporal development of such filaments are studied. The time scale of this process is found to be controlled by HCl depletion. With strong preionization (n_e>10⁹/cm ³) and a fast (10 ns) rising discharge voltage applied at the end of the preionizing X-ray pulse, the filaments originate from hotspots formed in the cathode layer. The shot by shot statistics of spot formation on freshly prepared cathodes reveal that hotspots are not caused by streamers developing in the high field region of strongly reduced electron density built up by electron diffusion during formation of the cathode sheath. Unexpectedly, a large number of weak diffuse filaments are found in spotless discharges (current density 300 A/cm²; duration 200 ns), in spite of the strong preionization     

Self-consistent current motion of electrons and ions inhigh-current plasma channel

This paper analyses a self-consistent current motion of charged particles in high-current plasma channel. Application of the results obtained to real current channels is possible provided that pair collisions do not considerably affect the current motion of plasma charged particles and the depth of the current layer is small as compared to the channel radius. The approximation adopted in this paper can be considered to be true, for instance, in the case of hydrogen channels with millimeter radius and electron energy of the order of 10 keV provided that the plasma concentration in them is in the range of 10 ¹⁷ cm^-3e<10²⁰ cm^-3. In the present paper, advantage is taken of a kinetic plasma model with electrons and ions in the form of particle beams whose motion is governed by the resulting self-consistent electromagnetic field. It is shown that in a plasma with sufficiently high particle concentration, when the collisionless skin depth is small as compared to the channel radius, the ion motion results in the negative electron contribution to the total channel current. Moreover, the ion component of the current exceeds the total current. This is accompanied by high-speed plasma motion in the form of the electroneutral axial flux, whose direction coincides with that of the total channel current     

梯度掺杂对n型异质结太阳能电池性能的影响

通过仿真软件AFORS-HET对a-Si:H(p)/i-a-Si:H/c-Si(n)异质结太阳能电池的光伏特性进行分析及优化,主要对比了a-Si:H(p)层的均匀掺杂和表面掺杂浓度D₁=1×10²⁰ cm^-3>界面掺杂浓度D₂=4×10¹⁹ cm^-3的梯度掺杂情况时的光伏特性,实现了在梯度掺杂时22.32%的光电转换效率。与均匀梯度掺杂相比,发射层的梯度掺杂除了引入一个附加电场,还优化了能带结构、光谱响应、表面复合速率。结果表明,梯度掺杂可以有效地改善电池的光电转换性能。     

温稠密钛电导率计算

温稠密物质是惯性约束核聚变、重离子聚变、Z箍缩动作过程中物质发展和存在的重要阶段. 其热力学性质和辐射输运参数在聚变实验和内爆驱动力学模拟过程中有至关重要的作用. 本文通过建立非理想Saha方程, 结合线性混合规则的理论方法模拟了温稠密钛从10^-5-10 g·cm^-3, 10⁴ K到3×10⁴ K区间的粒子组分分布和电导率随温度密度的变化, 其中粒子组分分布由非理想Saha方程求解得到. 线性混合规则模型计算温稠密钛的电导率时考虑了包括电子、原子和离子之间的多种相互作用. 钛的电导率的计算结果与已有的爆炸丝实验数据相符. 通过电导率随温度密度变化趋势判断, 钛在整个温度区间, 密度0.56 g·cm^-3时发生非金属相到金属相相变. 对于简并系数和耦合系数的计算分析, 钛等离子体在整个温度和密度区间逐渐从弱耦合、非简并状态过渡到强耦合部分简并态.     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.     

Longevity of optically activated, high gain GaAs photoconductivesemiconductor switches

The longevity of high gain GaAs photoconductive semiconductor switches (PCSSs) has been extended to well over ten million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The latter was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. We reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of ~2 kV. At currents of ~70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents, new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort we recorded open shutter, infra-red images, and time-resolved Schlieren images of the current filaments, which form during high gain switching. We measured, under varying conditions, a carrier (electrons or holes) density that ranges from 3×10¹⁷ cm^-3 to 6×10¹⁸ cm^-3     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.     

On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon

Deuterium diffusion profiles in p-type silicon doped with boron (10¹⁷–10¹⁹ cm^-3) and aluminum (10¹⁸ cm^-3) are simulated with an improved version of a previously reported model. The new approach, based on the observation of experimental profiles, excludes H₂ molecule formation and leads to a reduced fit parameters model. The different diffusion coefficients and activation energies of H⁰ and H⁺ species are determined and discussed in the light of available data. The dissociation energies of BH and AlH complexes are also calculated and found to be in good agreement with the corresponding reported values in the literature.     

Simulation study of a capacitively coupled plasma torch array

Using capacitively coupled electrical discharges, an array of three plasma torches powered by a single 60-Hz source are lit up simultaneously to produce a dense plasma in the open air. The discharge voltage and current of each torch is measured for three cases of one to three torches being lit up in the array. The results determine the ν-i characteristic of the discharge which indicates that the torch is operating in a diffuse are mode. The torch array is modeled by an equivalent circuit for simulating its operation. The simulation results of the discharge voltage and current of a torch are shown to agree well with those from the experimental measurements for the three cases. The lump circuit model is then used to carry out numerical simulations of the discharge for a broad parameter space of plasma species. By fitting the simulation results, a function giving the parametric dependence of the consumed average power density 〈P〉 on the normalized average electron density 〈n_e〉 maintained in the plasma is determined to be 〈P〉 48 〈n_e〉 ^1.9α_^0.4(W/cm³), where 〈n_e〉 is normalized to 10¹³cm^-3 and α_, the electron-ion recombination coefficient normalized to 10^-7 cm³·s^-1, is used as a variable parameter in the simulation     

Structural characterization of Al_(0.55)Ga_(0.45)N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction(HRXRD)and transmission electron microscopy(TEM);the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map(RSM).According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm~(-2) and 1.8×10~(10) cm~(-2),which agree with the results observed from TEM.     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

激光辐照固体靶产生等离子体反冲研究

提出一种通过诊断等离子体反冲动量来计算激光加载产生冲击压强的方法. 当强激光辐照固体靶表面时, 所产生的高速喷射的等离子体对靶具有反冲作用, 通过诊断等离子体反冲动量的变化可以计算激光辐照固体靶产生的冲击压强变化. 本文利用辐射流体力学软件研究了这种诊断方法, 模拟采用的激光功率密度为5×10¹²-5×10¹³ W/cm², 激光脉宽选取纳秒量级. 模拟结果表明该方法是有效且可行的.