一个分数阶忆阻器模型及其简单串联电路的特性

忆阻器是具有时间记忆特性的非线性电阻. 经典HP TiO₂忆阻器模型的忆阻值为此前通过忆阻器电流的时间积分, 即记忆没有损失. 而最近研究证实HP TiO₂ 线性忆阻器掺杂层厚度不能等于零或者器件整体厚度, 导致器件的记忆有损失. 基于此发现, 本文首先提出了一个阶数介于0 与1间的分数阶HP TiO₂ 线性忆阻器模型, 研究了当受到周期外激励时, 分数阶导数的阶数对其忆阻值动态范围和输出电压动态幅值的影响规律, 推导出了磁滞旁瓣面积的计算公式. 结果表明, 分数阶导数阶数对磁滞回线的形状及所围成区域面积有重要影响. 特别地, 在外激频率大于1时, 分数阶忆阻器的记忆强度达到最大. 然后讨论了此分数阶忆阻器与电容或电感串联组成的单口网络的伏安特性. 结果表明, 在周期激励驱动时, 随着分数阶导数阶数的变化, 此分数阶忆阻器与电容的串联电路呈现出纯电容电路与忆阻电路的转换, 而它与电感的串联电路则呈现出纯电感电路与忆阻电路的转换.     

Stochastic resonance in a gain--noise model of a single-mode laser driven by pump noise and quantum noise with cross-correlation between real and imaginary parts under direct signal modulation

Stochastic resonance (SR) is studied in a gain--noise model of a single-mode laser driven by a coloured pump noise and a quantum noise with cross-correlation between real and imaginary parts under a direct signal modulation. By using a linear approximation method, we find that the SR appears during the variation of signal-to-noise ratio (SNR) separately with the pump noise self-correlation time \tau , the noise correlation coefficient between the real part and the imaginary part of the quantum noise \lambda_q , the attenuation coefficient \gamma and the deterministic steady-state intensity I_0 . In addition, it is found that the SR can be characterized not only by the dependence of SNR on the noise variables of \tau and \lambda_q, but also by the dependence of SNR on the laser system variables of \gamma and I₀. Thus our investigation extends the characteristic quantity of SR proposed before.