Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

In order to accurately predict the single event upsets(SEU) rate of on-orbit proton, the influence of the proton energy distribution, incident angle, supply voltage, and test pattern on the height, width, and position of SEU peak of low energy protons(LEP) in 65 nm static random access memory(SRAM) are quantitatively evaluated and analyzed based on LEP testing data and Monte Carlo simulation. The results show that different initial proton energies used to degrade the beam energy will bring about the difference in the energy distribution of average proton energy at the surface and sensitive region of the device under test(DUT), which further leads to significant differences including the height of SEU peak and the threshold energy of SEU. Using the lowest initial proton energy is extremely important for SEU testing with low energy protons. The proton energy corresponding to the SEU peak shifts to higher average proton energies with the increase of the tilt angle, and the SEU peaks also increase significantly. The reduction of supply voltage lowers the critical charge of SEU, leading to the increase of LEP SEU cross section. For standard 6-transitor SRAM with bit-interleaving technology,SEU peak does not show clear dependence on three test patterns of logical checkerboard 55 H, all "1", and all "0". It should be noted that all the SEUs in 65 nm SRAM are single cell upset in LEP testing due to proton's low linear energy transfer(LET) value.     

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 Monte Carlo simulation results of the single event upset(SEU) induced by protons with energy ranging from0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3 D) die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3 D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU) ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3 D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the onorbit upset rate for the 3 D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3 D die-stacked device.     

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

The impact of ionizing radiation effect on single event upset(SEU) sensitivity of ferroelectric random access memory(FRAM) is studied in this work. The test specimens were firstly subjected to ~(60)Co γ-ray and then the SEU evaluation was conducted using ~(209)Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.     

Reliability of Neutron Yield Cross Sections on 12 C– 127 I Isotopes in Proton-Induced Reactions Evaluated Using GEANT4 Package for Proton Therapy Applications

The work is aimed at studying the reliability of proton-induced neutron yield cross sections on 12C–127I biological tissue isotopes using the GEANT4 Monte Carlo simulation package, which is commonly applied for dosimetry calculations in proton therapy. Because of the lack of experimental results on the neutron yield for most of the isotopes considered, the simulated cross sections are first compared with theoretical data acquired using the TALYS nuclear reaction package, and the partial reaction cross sections calculated in TALYS are in turn analyzed in comparison with available experimental results. The mismatch between theory and experiment allows one to suggest a significant uncertainty in the calculation of the neutron doses associated with the isotopes under consideration.     

重离子核反应对单粒子翻转的影响（英文）

LET作为一个传统的工程参量,并不能完全满足单粒子翻转数据表征的需要,而且也不能直接地反映核反应的一些特性(包括核反应概率与次级粒子),因此研究了重离子与器件作用过程中核反应对单粒子翻转的影响。基于蒙特卡罗模拟与深入的分析,本研究对比了在直接电离与考虑核反应两种模式下的模拟结果。在模拟中,利用不同的重离子表征了核反应在单粒子翻转发生中所起的作用。结果显示,核反应对单粒子翻转截面的贡献依赖于离子的能量,并呈现非单调的变化关系。基于模拟的结果,建议用重离子核反应引起单粒子翻转的最恶劣情况来预估空间单粒子翻转率。     

中国散裂中子源在大气中子单粒子效应研究中的应用评估

由于缺少可用的散裂中子源,多年来我国在大气中子单粒子效应方面主要依靠模拟仿真和单能中子试验的方式开展研究.随着中国散裂中子源(CSNS)通过国家验收,基于CSNS开展大气中子单粒子效应研究成为可能.本文利用CSNS反角白光中子源开展多款静态随机存取存储器器件的中子单粒子效应试验,并与早期开展的高原大气试验结果进行对比,对CSNS在大气中子单粒子效应研究中的应用进行评估.结果表明,相同器件在CSNS反角白光中子源测得的单粒子翻转截面小于大气试验的结果,且不同器件的翻转截面与特征尺寸没有明显的单调关系.分析得到前者由于CSNS反角白光中子谱偏软;后者由于特征尺寸降低导致的临界电荷变小和灵敏体积变小对截面的贡献是竞争关系.针对截面偏小的问题,根据能谱差异分析了中子能量阈值对器件翻转截面的影响,发现能量阈值取12MeV进行计算时,器件在CSNS反角白光中子源和高原大气中子环境中能够得到较一致的截面.研究结果表明CSNS反角白光中子源能够用于加速大气中子单粒子效应试验.考虑到CSNS的运行功率正在逐步提高,且多条规划中的白光中子束线与大气中子能谱更为接近,预期未来CSNS将能更好地应用于大气中子单粒子效应研究.     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

纳米DDR SRAM器件重离子单粒子效应试验研究

针对90 nm和65 nm DDR（双倍数率）SRAM器件,开展与纳米尺度SRAM单粒子效应相关性的试验研究。分析了特征尺寸、测试图形、离子入射角度、工作电压等不同试验条件对单粒子翻转（SEU）的影响和效应规律,并对现有试验方法的可行性进行了分析。研究表明:特征尺寸减小导致翻转截面降低,测试图形和工作电压对器件单粒子翻转截面影响不大;随着入射角度增加,多位翻转的增加导致器件SEU截面有所增大;余弦倾角的试验方法对于纳米器件的适用性与离子种类和线性能量转移（LET）值相关,具有很大的局限性。     

Calculation and analysis of cross-sections for p+~(184)W reactions up to 200 MeV

A set of optimal proton optical potential parameters for p+184W reactions are obtained at incident proton energy up to 250 MeV.Based on these parameters,the reaction cross-sections,elastic scattering angular distributions,energy spectra and double differential cross sections of proton-induced reactions on184W are calculated and analyzed by using theoretical models which integrate the optical model,distorted Born wave approximation theory,intranuclear cascade model,exciton model,Hauser-Feshbach theory and evaporation model.The calculated results are compared with existing experimental data and good agreement is achieved.     

Single event upsets of spacecraft microelectronics exposed to solar cosmic rays

The technique for evaluating the SEU rate induced by solar particle incidence on spacecraft microelectronics is described, including the contributions from the primary (heavy ion-induced) and secondary (proton-induced) SEU mechanisms. The technique is based on original computational models for solar particle energy spectra and for SEU occurrence in electronics. The technique was used to analyze the data of the TDRS-1 Fairchild 93L422 IC exposed to protons and ions during the solar cosmic ray event of September–October 1989. The analysis included the distribution of the microcircuit shielding. A strong dependence of solar proton-to-ion ratio on the shielding thickness was indicated by the calculations.     

Geant4模拟δ电子对单粒子翻转的影响

利用Geant4蒙特卡洛程序包, 基于RPP (Rectangular ParallelePiped Volume)模型构建SRAM器件单元的灵敏体积, 编写了重离子在器件材料中的输运程序和单粒子翻转截面计算方法, 得到了简化器件结构的单粒子翻转截面σ与线性能量转移LET的关系曲线, 计算得到的翻转LET阈值和饱和截面与实验结果基本一致。模拟获得了LET值为99.69 MeV/(cm-2·mg)的Bi离子及LET值为69 MeV/(cm-2·mg)的Bi离子和Xe离子在器件材料中产生的δ电子分布图像,讨论了δ电子分布对翻转截面的影响。 计算了灵敏体积中能量沉积与δ电子分布的关系,认为δ电子分布对单粒子效应的影响随着器件的特征尺寸减小将更加严重。In this paper, the sensitive volume of SRAMs was constructed based on RPP(Rectangular ParallelePiped Volume) model using the Monte-Carlo code Geant4. The interactions of heavy ion with materials and the SEU(Single Event Upset) cross section calculation method were presented in the program. The SEU cross section curves with the linear energy deposition ware obtained. The SEU threshold value and saturation cross section were consistent with the testing data with heavy ions beam. The δ electrons distribution were different in the device material, which were generated by Bi ion with LETs of 99.67 MeV/(cm2·mg) and Bi ion, Xe ion with LETs of 69 MeV/(cm-2·mg). These results indicate δ electrons distribution impacts on the SEU cross section. According to the relation of energy deposition in the sensitive volume, the δ electrons distribution have more and more important effect on the Single Event Effect with reducing the feature size of semiconductor devices.     

Calculations of double-differential triton emission cross sections at 62-MeV proton-induced reactions

Double-differential cross sections (d ² σ/dΩd?) have been calculated and analyzed for triton production in proton-induced reactions on ²⁷Al, ^54,56Fe, ¹⁹⁷Au, and ²⁰⁸Pb target nuclei at incident energy of 62 MeV. Calculations of double-differential cross sections have been performed using nuclear models implemented in the TALYS 1.2 code. The calculated results of the double-differential cross sections for triton emission have been compared with the existing experimental data.     

Inclusive (p, π) reactions at 201 and 180 MeV

Inclusive proton-induced charged pion production was studied on ¹²C, ⁸⁹Y and ^natPb at 201 and 180 MeV. A QQD spectrometer was used for forward angles and a plastic scintillator range spectrometer for backward angles. The angular dependence, variation with the pion energy, and total cross sections are deduced from doubly differential cross section measurements.     

高能质子单粒子翻转效应的模拟计算

在分析质子与硅反应的基础上,提出质子单粒子翻转截面理论计算模型,建立了模拟计算方法.计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量.指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量,产生电荷,导致单粒子效应,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系.并将计算得到的单粒子翻转截面与实验数据进行了比较.     

New approximations to the energy dependences of the total cross sections for the proton-induced fission of <Superscript>197</Superscript>Au, <Superscript>203</Superscript>Tl, <Superscript>nat</Superscript>Pb,and <Superscript>209</Superscript>Bi nuclei

The total cross sections for ¹⁹⁷Au and ²⁰³Tl fission induced by protons of energy varied from about 200 to 1000 MeV with a step of about 100 MeV are measured. New approximations to the energy dependences of the cross sections for the proton-induced fission of ¹⁹⁷Au, ²⁰³Tl, natPb, and ²⁰⁹Bi nuclei are presented and discussed. For all of these nuclei, exponential functions are used as approximations.     

Pattern dependence in synergistic effects of total dose on single-event upset hardness

The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.     

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis(MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset(SEU) effect, including the deposited energy,traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of209 Bi have a wider distribution of energy deposition than132 Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer(LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.     

中子引起单粒子翻转过程的Monte Carlo计算模拟

从中子与硅原子相互作用的物理机理出发,利用Monte Carlo方法编制了中子引起单粒子翻转的计算模拟程序,并对14 MeV中子环境下的16K位静态存储器硅片翻转过程中的物理量进行了计算,同时可为中子引起的单粒子翻转的研究提供截面和描述内部物理过程的参考数据。     

半导体器件单粒子效应的加速器模拟实验

 着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级，从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10^-7 cm²·bit^-11量级，单粒子翻转重离子LET阈值为4～8MeV·cm²/mg，重离子单粒子翻转饱和截面为10^-7 cm²·bit^-1量级。     

Mechanism of Proton-Induced Reactions on Targets ^16O, ^27Al, ^56Fe, ^112Cd, ^184W and ^208Pb At Ep = 800 MeV

We investigate the 800 MeV proton-induced spallation reactions on various targets by the improved quantum molecular dynamics （ImQMD05） model incorporated with a statistical decay model （SDM）. The influence of the nucleon-nucleon effective interaction on proton induced spallation reactions is studied by using different Skyrme interactions. It is found that the low energy part of the neutron double differential cross sections （DDCS）, which is mainly contributed from the decay of the excited residue, is influenced by the effective nucleon-nucleon interaction strongly., while the high energy part of neutron DDCS is influenced weakly. Among the Skyrme interactions used in the calculations, the calculation results with SkP give the best agreement with the experimental data.