基于离子注入隔离的微缩化发光二极管阵列性能

基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 ke V单次注入器件, 50/100 ke V两次注入器件具有更好的光电性能,器件反向漏电降低8.4倍,光输出功率密度提升1.3倍.同时,在不同的发光孔径(6, 8, 10μm)条件下,器件反向漏电流均为3.4×10–8 A,但正向工作电压随孔径增大而减小,分别为3.3, 3.1, 2.9 V.此外,器件不同发光孔径的有效发光面积比(实际发光面积与器件面积之比)分别为85%, 87%, 92%.与传统台面刻蚀micro-LED器件相比,离子注入隔离技术实现的micro-LED器件具有较低反的向漏电流密度、较高的光输出密度及有效发光面积比.     

紧凑型宽谱高功率微波辐射器仿真设计

为了提高宽谱高功率微波辐射源的辐射因子,提出采用双路同步输出的宽谱谐振器驱动2×2宽带高功率贴片天线阵的技术思路。设计了一种双路同步输出的宽谱高功率脉冲谐振器,由两个同轴谐振腔尾尾相连,并共用一个环形对地开关,实现两路宽谱脉冲的同步产生与输出,通过对"T"形充电结构进行优化,使输出宽谱脉冲幅值达到充电电压的0.89倍。2×2宽带高功率单层贴片天线阵采用气体基底和单层贴片结构以降低重量,单层贴片设计为E形以拓展工作带宽,通过对天线阵几何参数进行全局优化,优化后的天线阵百分比带宽为47%(驻波比VSWR小于2),中心频率300 MHz的增益为11.8dB。对天线阵工作过程中的电场强度分析表明,在天线罩内填充105 Pa的SF6气体时,理论功率容量可达到7.4GW。对整个辐射系统的电性能进行了仿真分析,系统的理论辐射因子可达谐振器充电电压的2.8倍。     

氮化镓基蓝光发光二极管伽马辐照的1/f噪声表征

通过电离辐照对氮化镓基蓝光发光二极管器件有源区光/暗电流产生机制的研究, 建立了电离辐照减小发光二极管有效输出功率电学模型.通过电离辐照对氮化镓基蓝光发光 二极管器件有源区1/f噪声影响机制的研究, 建立了电离辐照增大发光二极管1/f噪声的相关性模型.在I < 1 μA 的小注入区,空间电荷区的复合电流随辐照剂量的增加而增加. 同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大. 在 I> 1 mA 的大注入条件下, 由于串联电阻的影响占主导地位,表面复合速率和电流随辐照剂量的增加而增加.同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大.根据辐照前后电流电压试验结果噪声测试结论, 证实了实验结论与理论推导结果的一致性. 在1 μA < I < 5×10^-5 A 的中值电流情况下, 由于高能载流子散射相关的迁移率涨落与辐照新增缺陷引起的载流子数涨落竞争机制, 随着辐照剂量增大, 1/f噪声在频域变化没有明显规律. 但是, 通过1/f噪声时域多尺度熵复杂度分析方法, 得出随着辐照剂量增大, 1/f噪声时域多尺度熵复杂度的结果. 最终证实1/f噪声幅度可以敏感地反映小注入和大注入情况下氮化镓基蓝光发光二极管电离辐照的可靠性. 噪声幅值越大, 则说明辐照感应N_it越高, 暗电流相关的复合电流越大, 光电流相关的扩散电流比例减少, 使得器件发光效率、光输出功率等性能参数下降, 继而影响器件可靠性, 造成失效率显著增大. 1/f噪声时域多尺度熵复杂度可以敏感地反映中值电流情况下氮 化镓基蓝光发光二极管的电离辐照可靠性.多尺度熵复杂度越大, 则说明辐照感应越多, 复合电流越大,器件可靠性越差.本文结论提供了一种基于 1/f噪声的氮化镓基蓝光发光二极管电离辐照可靠性表征方法. 关键词： f噪声')" href="#">1/f噪声 电离辐照 氮化镓基蓝光发光二极管     

磁悬浮式电磁-摩擦复合生物机械能量采集器

能量采集技术已经成为智能终端领域的一项关键技术,关于人体机械能采集方式也有大量的研究.针对人体机械能采集的应用需求,本文提出一种基于磁悬浮结构的电磁-摩擦复合式能量采集器.该能量采集器以磁悬浮结构作为核心部件,具有结构简单、感应灵敏、输出功率高的优点.在10 MΩ的外接负载时,两组摩擦发电单元输出功率分别为0.12 mW和0.13 mW;在1kΩ外接负载时,两组电磁发电单元的输出功率分别为36 mW和38 mW.复合能量采集器通过电容储能后,电容器可以输出8 V电压,且输出信号为持续的直流信号,可以为计步器提供持续的能量供给,支撑计步器正常工作.设计的复合能量采集器对于可穿戴电子设备自供电工作模式的实现具有重要意义.     

1 W of blue 465-nm radiation generated by frequency doubling of the output of a high-power diode laser in critically phase-matched LiB3O5

Blue 465-nm radiation is generated by frequency doubling of the output of an InGaAs diode-laser oscillator-amplifier system in critically phase-matched LiB(3)O(5) (LBO). The diode-laser system emitted 4 W of single-frequency 930-nm radiation in a near-diffraction-limited beam (M(2)<1.2) . The laser power is enhanced to values of up to 150 W in a resonant external ring cavity. The LBO crystal is placed at a resonator internal focus. The frequency doubling in the LBO crystal generates blue radiation at 465 nm with a power of 1 W. The spectral width of the blue radiation is less than 3 MHz, and the value of the M(2) beam parameter is less than 1.2.     

Low driving voltage in white organic light-emitting diodes using an interfacial energy barrier free multilayer emitting structure

The driving voltage of white organic light-emitting diodes (WOLEDs) with blue fluorescent and red phosphorescent emitting materials was lowered by using a device architecture with little energy barrier between emitting layers. A mixed layer of hole and electron transport materials was used as a host material and an interlayer, reducing the driving voltage of WOLEDs. The driving voltage of WOLEDs was reduced by more than 4 V and power efficiency of WOLEDs was improved by more than 40% due to little energy barrier for holes and electrons injection in light-emitting layer. In addition, there was little change of electroluminescence spectra from 100 to 10,000 cd/m².     

Modeling a novel energy harvester working in Lame mode

A new square shaped piezoelectric bimorph structure for energy scavenging purposes has been proposed and simulated. It is derived from theoretical analysis that the output power of the structure is proportional to the value of the resonant frequency. The device working in Lame mode has a much higher resonant frequency of 2.39 MHz than devices working in ordinary bending modes, which is expected to significantly increase the energy output of radioisotope power generators (RPGs). The results of static analysis and dynamic response show that output voltage is linear with the applied load; the output power is quadratic with the applied load.     

Efficiency improvement and spectral shift of an organic light-emitting device with a square-based microlens array

In this paper, we present and analyze the influences of the fill factor and the height ratio of square-based microlens arrays on the optical characteristics of an organic light-emitting device (OLED). These properties include spectral shift, CIE coordinates, viewing-angle dependence, luminous current efficiency and luminous power efficiency. Both the luminous current efficiency and luminous power efficiency of the OLED were found to increase linearly with increasing the fill factor of microlenses. It is also found that the full width at half maximum (FWHM) of the OLED spectra and CIE coordinate decreased linearly with increasing the fill factor of the microlenses. Besides, the efficiency improvement of the OLED increased with the height ratio of attached microlenses. Compared to the OLED, the luminous current efficiency and luminous power efficiency of the device can be enhanced by 42% and 47%, respectively, by attaching the microlens array having a fill factor of 90% and a height ratio of 0.57. We also observed blue shifts at different viewing angles when microlens arrays were attached to the OLED, which is the evidence that the waveguiding modes are being extracted. In our planar OLED, the peak wavelength blue shifted and the FWHM decreased with increasing the viewing angles due to the microcavity effect.     

条形几何尺寸对光通信用GaAs-GaAlAs边发光管性能的影响

本文阐述了条形几何尺寸对GaAs-GaAlAs边发光管性能的影响.计算了不同条宽的侧向电流分布和光场分布情况.计算与实验结果很好相符.通过合理的折衷,在100mA的低注入电流下获得了性能良好的边发光二极管,其标准尾纤的输出功率大于100μW,光带宽超过120MHz.是三次群光通信较为理想的光源器件.     

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA.     

TBVB用作蓝光发光层的非掺杂有机电致蓝光和白光器件

利用一种来源于PPV的发蓝光的齐聚物材料2,5,2',5'-tetra(4'-biphenylenevinyl)-biphenyl(TBVB)制作非掺杂的有机电致蓝光和白光器件。蓝光器件的结构为ITO/NPB/TBVB/Alq₃/LiF/Al,其中TBVB用作发光层;白光器件的结构为ITO/NPB/TBVB/rubrene/Alq₃/LiF/Al,其中TBVB与超薄层(平均“厚度”0.05~0.20nm)的Rubrene相结合用作发光层,二者分别发蓝光和黄光。在蓝光器件中,当TBVB的厚度为30nm时,器件发出色坐标为(0.20,0.26)的蓝光,其最大亮度和效率分别达到2154cd/m²和1.62cd/A。在白光器件中,可通过调节TBVB和Rubrene的厚度实现对器件发光色度的调节。当TBVB和Rubrene的厚度分别为10,0.15nm时,器件在亮度为4000cd/m²时发光色坐标为(0.33,0.34),非常接近白光等能点,且随着电压的变化始终处于白光区。当电压为16V时该器件达到最高亮度4025cd/m²;当电压为6V时器件有最高的效率3.2cd/A。     

Sum frequency generation of continuously tunable blue pulses from a two-branch femtosecond fiber source

We report on the generation of femtosecond blue pulses from a two-branch mode-locked erbium-doped fiber source. This is achieved by sum-frequency mixing in β-barium borate between the frequency doubled laser radiation at 770 nm and a tunable near-infrared component generated inside a highly nonlinear fiber. Small angle tuning of the nonlinear crystal leads to a continuously variable output wavelength in the visible band between 460 nm and 500 nm. Average power levels exceeding 1.5 mW were collected throughout the entire tuning range of our device, which delivered sub-300-fs pulses at a repetition rate of 98 MHz. These values indicate that the input near-infrared radiation is up-converted with a photon efficiency of 20%.     

Exciplex elimination in an organic light-emitting diode based on a fluorene derivative by inserting 4,4’-N,N’-dicarbazole-biphenyl into donor/acceptor interface

Organic light-emitting diodes (OLEDs) composed of a novel fluorene derivative of 2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)-6,7-difluoroquinoxaline (F2Py) were fabricated, and exciplex emission was observed in the device. To depress the exciplex in an OLED for pure colour light emission, 4, 4'-N,N'-dicarbazole-biphenyl (CBP) was inserted as a separator at the donor/acceptor interface. It was found that the device without the CBP layer emitted a green light peaking at 542~nm from the exciplex and a shoulder peak about 430~nm from F2Py. In contrast, the OLED with CBP layer emitted only a blue light peak at about 432~nm from F2Py. Device efficiencies were calculated by a simulative mode in an injection controlled type mechanism, and the results showed that exciplexes yield much lower quantum efficiency than excitons. The device with CBP has a higher power efficiency as no exciplex was present.     

全固态多波长飞秒脉冲激光系统

利用棱镜对引进频谱空间啁啾来补偿飞秒脉冲激光二次谐波产生中的相位失配,提高了倍频效率建立了一套全固态、多波长(1065nm, 532nm,823.1nm, 402nm)飞秒脉冲激光系统自制的Nd:YVO4激光器输出532nm绿光激光,最高平均功率可达5.6W当用2.5W绿光激光泵浦时,从自制的钛宝石激光器及经BBO倍频可分别输出中心波长为823.1nm和402nm,平均功率300mW和73mW,谱宽32.3nm和5.1nm,脉宽22fs和33.3fs、重复率108MHz的近红外和蓝光激光整个系统具有结构紧凑、倍频效率高、运行稳定的特点.     

开关激励宽谱电磁脉冲谐振器频域响应特性

开关激励的同轴/4谐振器是产生宽谱高功率电磁脉冲的主要方式之一,采用冲击脉冲方法分析了带耦合器输出的宽带脉冲谐振器频域响应特性。首先推导了频域响应特性与耦合器耦合系数之间的关系,并得到了产生脉冲的带宽表达式,利用Taguchi算法优化设计了宽带耦合器,使其在200~500 MHz的耦合系数S21接近0.6,之后利用轴对称的柱坐标2D-FDTD对带耦合器的宽带脉冲谐振器工作过程进行了模拟,对于不同的谐振长度,可产生200~500 MHz中心频率的宽带脉冲,其频谱和带宽与理论结果吻合较好。     

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.     

高功率宽带射频调制连续激光源

射频强度调制激光作为激光雷达系统的载波可以有效提高系统的抗干扰和抗散射能力,高功率宽带射频强度调制光源是实现高分辨率远距离探测的关键.本文采用在Nd:YAG激光器的耦合腔中插入一对四分之一波片的方法实现了频差调谐范围为30 MHz—1.5 GHz的双频激光输出,结合光纤振荡功率放大技术,将双频信号光功率放大为50 W.耦合腔双频种子源具有良好的功率和频率稳定性,输出功率为9.5 mW时,功率标准差为0.145 mW,稳定性为1.52%,输出双频激光的频差为250 MHz时,拍频的标准差为1.6144 MHz.种子光进行三级光纤功率放大,得到50 W双频激光输出.放大后的双频激光功率波动范围小于0.1 W,双频拍频的标准差为1.777 MHz,很好地保持了放大之前的功率稳定性和双频频差稳定性.     

Continuous wave Nd:YAG-BiBO blue laser under direct 869 nm pumping

We report a blue laser at 473 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 946 nm Nd:YAG laser under in-band diode pumping at 869 nm. An BiBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 8.6 W, as high as 721 mW of CW output power at 473 nm is achieved. The optical-to-optical conversion efficiency is up to 8.4%, and the fluctuation of the blue output power was better than 3.5% in the given 30 min.     

Generation of 740 mW of blue light by intracavity frequency doubling with a first-order quasi-phase-matched KTiOPO(4) crystal

We report on efficient intracavity frequency doubling of a cw diode-pumped Nd:YAG laser on the (4)F(3/2)?(4)I(9/2) laser transition at 946 nm. The nonlinear crystal used in the experiments was a first-order quasi-phase-matched flux-grown KTiOPO(4) crystal (period, 6.09mum ; thickness, 1 mm; length, 9 mm). The fluctuations in the generated second-harmonic wave were lower than 3% at output powers of as much as 500 mW. The overall optical-to-optical efficiency was 5.7%. A maximum output power of 740 mW of blue light was generated, which was stable for only 0.5 min. The decrease the output power at this power level was attributed to heating and thermal lensing in the periodically poled KTiOPO(4) crystal. The short-term behavior of the second-harmonic wave exhibited switching between a cw mode and chaotic intensity fluctuations.     

一种基于蓝色荧光与磷光敏化技术的高显色指数白光有机电致发光器件的制备

通过采用4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl (BCzVBi)为蓝色荧光发光单元,绿色磷光材料fac tris(2-phenylpyridine) iridium 敏化红色荧光材料4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB)为混合黄色发光单元,制备了一组白光有机电致发光器件。通过对染料掺杂浓度的优化,以及引入适当厚度的4,4-N,N-dicarbazole-biphenyl (CBP)作为中间层,获得了高效率、高显色指数的白光有机电致发光器件。器件在100 cd/m²亮度下的最高显色指数达到了90,此时的色坐标为(0.32,0.32), 非常接近白光等能点。该组器件的最大电流效率达到了11.00 cd/A,相应器件的最大亮度为13 330 cd/m²。