磁性随机存储器的研究进展

通过分析磁性随机存储器(MRAM)的基本原理,及其与现有的静态存储器(SRAM)、动态存储器(DRAM)和快闪存储器(Flash)的性能比较,探讨了MRAM作为下一代新型存储器的应用前景.     

磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

在基于磁性隧道结(Magnetic Tunneling Junction，MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory，MRAM)中利用通过MTJ的垂直电流，实现信息写入的新方法，同时给出了基于此新方法的一种新的MRAM结构和驱动原理图，并分析了它的读和写操作的可行性具体过程. 关键词： 垂直电流 磁性隧道结 磁随机存储器     

Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.     

不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法

基于建立的不同工艺尺寸的CMOS器件模型,利用TCAD器件模拟的方法,针对不同工艺CMOS器件,开展了不同工艺尺寸CMOS器件单粒子闩锁效应(SEL)的研究。研究表明,器件工艺尺寸越大,SEL效应越敏感。结合单粒子闩锁效应触发机制,提出了保护带、保护环两种器件级抗SEL加固设计方法,并通过TCAD仿真和重离子试验验证防护效果,得出最优的加固防护设计。结果表明,90nm和0.13μm CMOS器件尽量选用保护带抗SEL结构,0.18μm或更大工艺尺寸CMOS器件建议选取保护环抗SEL结构。     

双等离子体团相互作用的磁流体力学模拟

利用商用磁流体力学模拟程序USIM对双等离子体团相互作用过程进行了数值模拟,分别考察和比较了双对流等离子体团在外加磁场和无外加磁场情况下,相互作用的物理过程.发现在外加磁场情况下等离子体团相互作用会伴随着磁重联(反向磁场)、磁排斥(同向磁场)以及一些不稳定过程.针对激光产生等离子体团错位相互作用实验,进行了标度模拟,发现外加磁场起着重要作用,进一步表明激光等离子体的磁化特征.研究结果为下一步在神光Ⅱ激光装置进行强磁环境下等离子体实验提供理论指导.     

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor(DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.     

Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation

The cathodoluminescence (CL) spectra of AlGaN/GaN heterostructures grown on sapphire substrate were studied before and after gamma irradiation treatment. The CL spectroscopy results reveal strong yellow and blue luminescence transformation under gamma radiation treatment. The changes in CL spectra are compared with changes in the electrical characteristics of two-dimensional gas in AlGaN/GaN heterostructures. The origins of the observed improvement in properties of AlGaN/GaN heterostructures after gamma radiation treatment with 1 × 10⁶ rad are discussed on the basis of compensation and structural ordering of native defects.     

Comparative analysis of influence of gamma radiation on programmable memory characteristics

The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 – B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.     

超深亚微米互补金属氧化物半导体器件的剂量率效应

对0.18 μm互补金属氧化物半导体(CMOS)工艺的N型金属氧化物半导体场效应晶体管(NMOSFET)及静态随机存储器(SRAM)开展了不同剂量率下的电离总剂量辐照试验研究. 结果表明: 在相同累积剂量, SRAM的低剂量率辐照损伤要略大于高剂量率辐照的损伤, 并且低剂量率辐照损伤要远大于高剂量率辐照加与低剂量率辐照时间相同的室温退火后的损伤. 虽然NMOSFET 低剂量率辐照损伤略小于高剂量率辐照损伤, 但室温退火后, 高剂量率辐照损伤同样要远小于低剂量率辐照损伤. 研究结果表明0.18 μm CMOS工艺器件的辐射损伤不是时间相关效应. 利用数值模拟的方法提出了解释CMOS器件剂量率效应的理论模型.     

0.18 μm窄沟NMOS晶体管总剂量效应研究

为明确深亚微米NMOS器件抗辐照能力以及研究其加固措施, 本文对0.18 μm窄沟NMOS晶体管进行了⁶⁰Coγ总剂量辐射效应研究. 结果表明: 和宽沟器件不同, 阈值电压、跨导、漏源电导对总剂量辐照敏感, 此现象被称之为辐射感生窄沟道效应; 相比较栅氧化层, 器件隔离氧化层对总剂量辐照更敏感; 窄沟道NMOS器件阈值电压不仅和沟道耗尽区电荷有关, 寄生晶体管耗尽区电荷对其影响也不可忽略, 而辐照引起源漏之间寄生晶体管开启, 形成漏电通道, 正是导致漏电流、亚阈斜率等参数变化的原因. 关键词： 0.18μmm 窄沟NMOS晶体管 60Coγ辐照')" href="#">⁶⁰Coγ辐照 辐射感生窄沟道效应     

Microstructure, magnetic and magnetoimpedance properties in electrodeposited NiFe/Cu and CoNiFe/Cu wire with thiourea additive in plating bath

Magnetic thin films of NiFe and CoNiFe alloys were electrodeposited from three different deposition baths onto copper wires of 100-μm diameter. The magnetic and magnetoimpedance (MI) properties of the samples along with their microstructure were investigated as a function of thiourea additive concentrations (C_T) in the plating bath. For all intermediate frequencies, the MI ratio increased with thiourea concentration in plating bath up to a critical concentration of 80 mg/l and then decreased considerably. The change in MI with thiourea concentration in electrodeposition bath was attributed to the grain size reducing action of thiourea, which in turn enhances the soft magnetic properties of the films. At higher concentration of thiourea, the sulfur inclusion increased the magnetic softness and MI value enhanced considerably. The origin of MI lies in the combined effect of domain wall motion and spin rotation, which contributes to permeability. Inductance spectroscopy (IS) was used to evaluate the magnetic characteristic of the samples by modeling coated wires in terms of equivalent electrical circuit; namely parallel LR (inductance and resistance) circuit in series with series LR circuit. The domain wall motion was found to be greatly affected by thiourea addition in the bath, which was revealed through the study of variation of these circuit parameters. The domain wall motion thereby affects the magnetic softness of samples, which is reflected in the MI enhancement.     

Nanomagnet logic: progress toward system-level integration

Quoting the International Technology Roadmap for Semiconductors (ITRS) 2009 Emerging Research Devices section, 'Nanomagnetic logic (NML) has potential advantages relative to CMOS of being non-volatile, dense, low-power, and radiation-hard. Such magnetic elements are compatible with MRAM technology, which can provide input–output interfaces. Compatibility with MRAM also promises a natural integration of memory and logic. Nanomagnetic logic also appears to be scalable to the ultimate limit of using individual atomic spins.' This article reviews progress toward complete and reliable NML systems. More specifically, we (i) review experimental progress toward fundamental characteristics a device must possess if it is to be used in a digital system, (ii) consider how the NML design space may impact the system-level energy (especially when considering the clock needed to drive a computation), (iii) explain--using both the NML design space and a discussion of clocking as context—how reliable circuit operation may be achieved, (iv) highlight experimental efforts regarding CMOS friendly clock structures for NML systems, (v) explain how electrical I/O could be achieved, and (vi) conclude with a brief discussion of suitable architectures for this technology. Throughout the article, we attempt to identify important areas for future work.     

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by mono-energetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (P_max) of silicon solar cells is presented and correlated using the displacement damage dose (D_d) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for P_max degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (V_oc) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The “modified circuit” is capable of modeling the “radiation damage” in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.     

10位CMOS数模转换器在中子和γ混合环境下的综合辐射效应

研究了在反应堆中子和γ射线综合辐照环境下CMOS工艺10位数模转换器(DAC)的辐射效应。通过对DAC在γ辐射环境、中子辐射环境、中子和γ混合辐射环境以及中子预辐照后进行γ射线辐照下的效应对比发现,在中子和γ混合辐射环境下会产生电离总剂量效应加剧现象,即一定混合程度的中子和γ同时辐照会增强CMOS器件的辐射效应。     

Total ionizing dose effects of domestic Si Ge HBTs under different dose rates

The total ionizing radiation(TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors(Si Ge HBTs) produced domestically are investigated under dose rates of 800 m Gy(Si)/s and 1.3 m Gy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect(TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity(ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.     

Influence of gamma radiation and magnetic resonance imaging radiation on micro-structure,hardness and electrochemical corrosion behavior of Co‒Cr-based dental alloy

The effects of therapeutic gamma radiation at 10, 20 and 30 kGy and magnetic resonance imaging radiation from a 1.5 T MR scanner on the micro-structure, electrochemical corrosion behavior and micro-hardness of commercial dental Magnum H50 (Co=64%, Cr=29%, Mo=6.5%) alloy have been investigated. The corrosion rate, corrosion resistance, corrosion potential and corrosion current density values of the alloy treated with 0.5 M HCl vary due to gamma and magnetic resonance imaging radiation. At 30 kGy, the corrosion resistance of Magnum H50 reaches a minimum value and the corrosion rate obtains a maximum value. The Vickers hardness value of the Magnum H50 alloy decreases after both gamma and magnetic resonance imaging radiation.     

Feasibility of radiation sterilization and dosimetric features of ampicillin: an electron spin resonance study

In the present work, it was aimed to identify radical species produced by gamma irradiation (3–34?kGy) of solid ampicillin, to determine its spectroscopic, dosimetric, stability and kinetic behavior, and to investigate feasibility of the radiation sterilization feature of ampicillin by using electron spin resonance (ESR) spectroscopy. ESR experiments were performed at low and high temperatures (130–400?K) to examine the characteristic properties of the radical intermediates that are produced in ampicillin by gamma radiation treatment. Unirradiated ampicillin presented no ESR signal but irradiated samples exhibited ESR spectra with four resonance peaks spread over a magnetic field range of 8?mT. The spectral parameters of the central resonance line of the spectrum are g?=?2.0044 and ΔH_pp?=?0.08?mT. An exponential growth function of the applied dose was found to describe best the experimental dose–response data and it was found that ampicillin did not exhibit the feature of a good dosimetric material as its ESR intensity was relatively weak even for the samples irradiated at high level of doses. G_mean value of gamma-irradiated ampicillin was found to be 4.6?±?0.9?×?10^?9?mol/J, which is very small compared to irradiated alanine solid sample. However, the discrimination of irradiated ampicillin from unirradiated one was possible even ～3 months after storage at normal conditions. The simulation calculations indicated that gamma irradiation created two different radical species in solid ampicillin. Decay activation energy of the radical species which is mostly responsible from central intense resonance line is calculated to be 55.6?±?3.2?kJ/mol by using the signal intensity decay data derived from annealing studies. It was concluded that ampicillin could be sterilized by gamma radiation and ESR spectroscopy can be used as a potential technique to monitor its radiosterilization process.     

掺铥光纤γ射线辐照效应实验研究

面向2μm掺铥光纤激光器的空间应用,本文针对典型商用掺铥光纤(TDF)开展了γ射线辐照效应实验研究。利用~(60)Co源放射的γ射线,对由5段同批次Nufern公司SM-TDF-10P/130-HE型TDF样品搭建的2μm光纤激光器进行总剂量为9.0 krad(Si)、剂量率为0.5~3.0 rad/s的辐照效应在线测试。结果表明,TDF的出光性能在辐照过程中出现了显著衰减,衰减幅度随着剂量率的上升而增大。通过对TDF样品在辐照前和辐照后的吸收光谱进行对比测试,观察到在经过总剂量9 krad(Si)的γ射线辐照后,TDF对793 nm泵浦光的吸收峰接近消失。对前述经历γ辐照之后的TDF样品进行2 h的793 nm泵浦光漂白实验测试,未见其出现性能恢复现象。可见,面向空间应用的该典型掺铥光纤需大力提高耐空间辐射性能。     

Investigation of the effect of gamma rays on electrical properties of chlorinated poly (vinyl chloride)

Dielectric constant, dielectric loss and AC conductivity were measured, in the frequency range 100 Hz to 5 MHz in chlorinated poly (vinyl chloride) (CPVC) before and after exposure to gamma irradiation at doses between 5.0 KGy and 50.0 KGy. The frequency dependencies of ε′, ε″ and σ_AC at 30 °C were investigated. A relaxation peak in the dielectric loss and a corresponding step in the dielectric constant have been observed, in the frequency ranges 10³ Hz to 10⁴ Hz. The dielectric constant ε′, dielectric loss ε″ and AC conductivity σ_AC are also found to increase at heating up to 100 °C. In addition the effect of gamma irradiation on the frequency dependencies of ε′, ε″ and σ_AC was measured at room temperature. The gamma irradiation leads to an increase in the efficiency of soft segments. Furthermore, the DC electrical conductivity of both the irradiated and non-irradiated samples was investigated. The induced electrical conductivity and the activation energy were measured, at various temperatures, as a function of gamma dose. It was found that the gamma radiation has a definite effect on the DC conductivity of the CPVC polymer.     

Gamma radiation effects on mechanical properties and morphology of a polyurethane derivate from castor oil

In this study, an adhesive of a polyurethane derivate from castor oil was irradiated with gamma radiation from a ⁶⁰Co source, at doses from 0.2 to 25 kGy. This adhesive polyurethane is considered for use in hospital furniture because it does not liberate dangerous solvents. Hardness and elastic modulus were measured by instrumented indentation with a pyramidal Berkovich indenter, using loads from 0.08–40 mN with a nanoindenter XP. The instrumented indentation hardness was 110 MPa for an untreated sample, increasing to 124 MPa after irradiation with 25 kGy, at penetration depths of about 5 μm. The increases in elastic modulus induced by radiation were less pronounced. This polyurethane is naturally cross-linked and the relative modifications in the hardness are attributed to an additional cross-linking process induced by radiation. X-ray diffraction indicates a slight increase in crystallinity. The roughness measured by atomic force microscopy increases after gamma irradiation.