Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

The various advantages of extended-source(ES), broken gate(BG), and hetero-gate-dielectric(HGD) technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance. The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction, and then, the on-state current for the ESBG TFET increases. The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail. The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013, large transconductance of 1200 μS/μm, high cut-off frequency of 72.8 GHz, and high gain bandwidth product of 14.3 GHz. Apart from these parameters, the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second-and third-order voltage intercept points, the third-order input interception point, and the third-order intermodulation distortion. Therefore, the ESBG TFET greatly promotes the application potential of conventional TFETs.     

DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (I_on), on/off current ratio (I_on/I_off), subthreshold swing (SS) transconductance (g_m), cut-off frequency (f_T) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on (9.98×10 ^{- 4} A/μm), high I_on/I_off (～ 10¹¹), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.     

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

A novel vertical graded source tunnel field-effect transistor(VGS-TFET) is proposed to improve device performance.By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional Ga As TFETs without sacrificing the subthreshold swing(SS) due to the improved band-toband tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 m V/dec. Furthermore, the minimum SS about 20 m V/dec indicates its promising potential for further ultralow power applications.     

Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. Compared with the conventional physical doping TFET devices, the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively, which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping. Besides, due to the hetero T-shaped gate, the improvement of the on-state performance can be achieved in the proposed device. The simulations of the device proposed here in this work show I_ON of 4.45×10^-5 A/μm, I_ON/I_OFF ratio of 10¹³, and SS_avg of 7.5 mV/dec in InN-Hetero-TG-TFET, which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET) and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET). These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.     

Temperature and set field dependence of exchange bias training effects in Co/NiO/[Co/Pt] heterostructures with orthogonal easy axes

Training effects in a new class of exchange biased ferromagnet/antiferromagnet/ferromagnet trilayers (Co/NiO/[Co/Pt]₃) with mutually orthogonal easy axes have been measured and successfully modeled. Previous experiments have demonstrated an enhanced blocking temperature as well as the ability to isothermally field tune the magnitude of the room temperature in-plane exchange bias. These effects have been attributed to the presence of the [Co/Pt] multilayer with perpendicular magnetic anisotropy, which variably pins the backside NiO domains. Here we show that the tuning of the exchange bias and the blocking temperature enhancement are highly dependent on both the temperature and the in-plane remanence of the normally out-of-plane [Co/Pt] multilayer, achieved using modest in-plane set fields. Training effects and their dependence on temperature and in-plane remanence are modeled using a thermodynamic approach. The in-plane remanence of the [Co/Pt] acts only to set the equilibrium exchange bias value and sets the scale for the blocking temperature; it has no effect on the training. We conclude that training effects occur only at the Co/NiO interface and that the relaxation towards equilibrium is confined to this interface. The field enhanced blocking temperature and isothermal tuning of exchange bias in these magnetic heterostructures with mutually orthogonal easy axes could play a role in the enhancement of exchange bias effects in future spin-valve devices. A thorough knowledge of the training effects is essential to account for the fundamental relaxation mechanisms that occur with repeated field cycling.     

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors

In this study, we examined the influence of using hetero-gate dielectrics (HGDs) on the short-channel effects (SCEs) in scaled tunnel field-effect transistors (TFETs). For bulk TFETs, the short-channel performance is not influenced by the HGD engineering because the SCEs are caused by the tunneling at the region with negligible gate control. However, the use of the HGD increases the SCEs in double-gate TFETs because the HGD reduces the gate control on the channel. When the HGD optimized in term of on-current is used, the channel of HGD-TFETs is about 10-nm longer than that of uniform-gate dielectric TFETs to obtain similar SCEs. The SCEs in HGD-TFETs can be improved by locating the drain-side heterojunction toward the drain and/or increasing the ratio of low- and high-k equivalent oxide thicknesses. Due to the trend of scaling transistors, an appropriate design of HGD to minimize the SCEs in scaled HGD-TFETs is also crucial.     

Spin transport properties in Fe-doped graphene/hexagonal boron-nitride nanoribbons heterostructures

By combining non-equilibrium Green's function (NEGF) with density functional theory (DFT), we systematically study the spin-related transport properties of the heterostructures composed of graphene and hexagonal boron-nitride (h-BN) when the metal Fe is doped different positions of the heterostructures interface. The results show that the heterostructures exhibit obvious spin-filtering effect (SFE) and negative differential resistance (NDR) due to the different absorbing positions of the metal Fe. And the spin filtering ratio can reach more than 90% in a specific bias voltage range. Moreover, spin-rectifying behaviors are detected in the heterostructures. Whether it is for the design of multifunctional devices or the synthesis of spintronic devices, these findings will have some reference value.     

Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (I_on), off-current (I_off), current ratio (I_on/I_off), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (f_T) and maximum oscillation frequency (f_max) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and I_on of 35 μA/μm were obtained. For this device, f_T and f_max were 80 GHz and 800 GHz, respectively.     

含羟基化合物的17O-NMR化学位移研究

在系统地归纳总结前人对含羟基化合物¹⁷O-NMR化学位移研究成果的基础上，按伯、仲、叔醇，i-R-OH型化合物(i-R表示与羟基直接相连的原子为非链状烷烃碳原子的取代基)及苯酚类等五大类，提出了计算含羟基化合物¹⁷O-NMR化学位移的公式：δ_cal=δ₀+∑a_iΔδ_i，并通过 线性回归法结合最小二乘法得到15种计算醇和羧酸中羟基¹⁷O-NMR化学位移时采用的取代基参数和23种计算 酚羟基¹⁷O-NMR化学位移时采用的取代基参数，计算结果分别以伯、仲、叔醇、i-R-OH型化合物四类140种化合物和60种酚类在化合物为样本点作回归检验，置信度均为99.5% ，计算误差Δδ小于5(相对误差小于0.5%)的¹⁷O-NMR化学位移计算值均在90 %以上.      

MoS2/Si tunnel diodes based on comprehensive transfer technique

Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current (I_OFF), high on-state current (I_ON) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS₂/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS₂ film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS₂/Si heterojunction. The bilayer MoS₂/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.     

Sensitivity enhancement in optical waveguide sensors using metamaterials

In this paper, we show negative differential resistance (NDR) in CdSe quantum dot/MEH-PPV based nanocomposite multi-layer heterostructures at room temperature. The four-layer structure exhibited a maximum peak-to-valley ratio of current of 1190 at room temperature, while two-layer structures show a value of 4. Two-, three- and four-layer structures are studied. Each device configuration exhibits different kind of negative differential resistance. The possible mechanism is explained on the basis of tunneling phenomena.     

Characteristics of cylindrical surrounding-gate GaAs_xSb_(1-x)/In_yGa_(1-y)As heterojunction tunneling field-effect transistors

A Ⅲ-Ⅴ heterojunction tunneling field-effect transistor(TFET) can enhance the on-state current effectively,and GaAs_xSb_1_x/In_yGa_1_yAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition.In this paper,the performance of the cylindrical surrounding-gate GaAs_xSb_1_x/In_yGa_1_yAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation.We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing(SS),while increasing source doping concentration and adjusting the composition of GaAs_xSb_1_xIn_yGa_1_yAs can improve the on-state current.In addition,the resonant TFET based on GaAs_xSb_1_x/In_yGa_1_yAs is also studied,and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current,respectively,and is much superior to the conventional TFET.     

Symmetric tunnel field-effect transistor (S-TFET)

A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET (i.e., asymmetric TFET). With a band-to-band tunneling process between the germanium source/drain region and the silicon channel region, the theoretical limit of the subthreshold slope (SS) can be overcome (i.e., SS ∼ 45 mV/decade). The bidirectional current flow in the S-TFET is implemented with a p-n-p structure. And better performance in the S-TFET is achieved with a thin silicon-pad layer below the source/drain regions. The effects of source/drain/channel doping concentration and thickness on the performance of the device are investigated in order to create an S-TFET design guideline. In the future, the S-TFET will be one of the promising device structures for ultra-low-power applications, especially in integrated circuits that operate with a half-volt power supply voltage.     

链状脂肪醚的17O-NMR化学位移研究

按甲基醚、乙基醚、正丙基醚、异丙基醚和叔丁基醚等五大类,提出了计算链状脂肪醚¹⁷O-NMR化学位移的公式：δcal =δ0n+Δα+ Δβ+Δγ,并通过线性回归法结合最小二乘法得到29种取代基的参数,计算结果用以上五大类147种化合物的147个¹⁷ O-NMR化学位移数据为样本点作回归检验,置信度为99.5%,计算误差Δδ小于5.0（相对误差小于0.5%）的¹⁷O-NMR化学位移计算值约占90%.     

超宽禁带半导体β-Ga_2O_3及深紫外透明电极、日盲探测器的研究进展

β-Ga_2O_3是一种新型的超宽禁带氧化物半导体,禁带宽度约为4.9 eV,对应日盲区,对波长大于253 nm的深紫外一可见光具有高的透过率,是天然的日盲紫外探测及深紫外透明电极材料.本文介绍了Ga_20_3材料的晶体结构、基本物性与器件应用,并综述了β-Ga_2O_3在深紫外透明导电电极和日盲紫外探测器中的最新研究进展.Sn掺杂的Ga_2O_3薄膜电导率可达到32.3 S/cm,透过率大于88%,但离商业化的透明导电电极还存在较大差距.在日盲紫外探测器应用方面,基于异质结结构的器件展现出更高的光响应度和更快的响应速度,ZnO/Ga_2O_3核/壳微米线的探测器综合性能最佳,在-6 V偏压下其对254 nm深紫外光的光响应度达1.3×10~3A/W,响应时间为20μs.     

β-环糊精包合物的1H NMR研究

用¹H NMR研究外消旋和光学纯的色氨酸(Try) 分子与β-环糊精(β-CD)形成的包埋复合物,通过主-客体分子的化学位移的变化说明这种主-客体包埋系统的手性识别过程.     

CeFe_(2-x)In_x合金磁性研究与CeFe_(1.95)In_(0.05)合金磁相变临界参数分析

通过等温磁化曲线和等磁场变温曲线测量与标度理论,系统研究了CeFe_(2-x)In_x合金的磁性和CeFe_(1.95)In_(0.05)合金的磁相变临界参数.结果表明:用2.5 at.%的铟替代CeFe_2合金中的铁并不能使合金中的反铁磁态在低温下完全稳定,低场下在2—80 K均能观察到反铁磁相振荡; CeFe_2与CeFe_(1.95)In_(0.05)合金的顺磁-铁磁二级相变居里温度均在230 K附近;在0—5 T磁场范围内, CeFe_(1.95)In_(0.05)合金居里温度处的最大磁熵变为3.13 J/(kg·K),相对制冷量为151.3 J/kg.通过不同方法得到的具有高度自洽性的磁相变标度临界参数均表明CeFe_(1.95)In_(0.05)合金的磁相互作用可以用基于短程相互作用的3D-Ising模型来描述.     

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (I_on), off-current (I_off), subthreshold swing (S), and I_on/I_off ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (f_T) and maximum oscillation frequency (f_max) on gate–drain capacitance (C_gd) with the underlapping were investigated as the gate length (L_gate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.     

Electric field assisted annealing effects on microstructure and ionic conductivity in ceria/YSZ oxide heterostructures

The effect of electric field assisted annealing on the microstructure, composition and ionic conductivity properties in CeO₂/YSZ oxide heterostructures have been investigated using molecular dynamics simulations. Amorphization–recrystallization steps were performed with and without external electric field of strength 10?MV/cm along three different orientations: in-plane (YZ), normal (X) and 45° resultant (XY) with respect to the oxide heterointerfaces. The microstructural and compositional differences at the interfaces and in the interior of the oxide heterolayers were evaluated and were found to show a clear correlation with the orientations of the applied field. In particular, the XY configuration displayed a compressive lattice strain of ～9% along with a reduced oxygen vacancy concentration when compared to the others. Ionic density profiles suggest pronounced segregation (～60% higher compared to the average value in the interior) of yttrium ions closer to the YSZ/CeO₂ interface for the XY configuration. Other configurations exhibit minimal to no such variations. These microstructural differences are found to affect the number of mobile charge carriers and the activation barriers associated with ionic migration through the oxide lattice and consequently, influence the ionic conductivity.     

Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems

Magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed.