多孔硅的时间延迟光谱

利用时间延迟光谱技术测量了多孔硅的发光光谱. 实验结果表明,多孔硅的发光是复杂的动力学发光弛豫过程,时间延迟光谱测量技术在研究复杂动力学发光过程方面比稳态光谱测量方法更有效.     

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

The photoluminescence(PL) and electrical properties of Al GaN/GaN high electron mobility transistors(HEMTs) with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an Fe_(Ga)~(3+/2+) acceptor level. This results in a decrease in the yellow luminescence(YL) emission intensity accompanied by the appearance of an infrared(IR) emission, and a decrease in the off-state buffer leakage current(BLC). However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.     

Polarized Raman and photoluminescence studies of a sub‐micron sized hexagonal AlGaN crystallite for structural and optical properties

The polarized Raman spectroscopy is capable of giving confirmation regarding the crystalline phase as well as the crystallographic orientation of the sample. In this context, apart from crystallographic X‐ray and electron diffraction tools, polarized Raman spectroscopy and corresponding spectral imaging can be a promising crystallographic tool for determining both crystalline phase and orientation. Sub‐micron sized hexagonal AlGaN crystallites are grown by a simple atmospheric pressure chemical vapor deposition technique using the self catalytic vapor–solid process under N‐rich condition. The crystallites are used for the polarized Raman spectra in different crystalline orientations along with spectral imaging studies. The results obtained from the polarized Raman spectral studies show single crystalline nature of sub‐micron sized hexagonal AlGaN crystallites. Optical properties of the crystallites for different crystalline orientations are also studied using polarized photoluminescence measurements. The influence of internal crystal field to the photoluminescence spectra is proposed to explain the distinctive observation of splitting of emission intensity reported, for the first time, in case of c‐plane oriented single crystalline AlGaN crystallite as compared with that of m‐plane oriented crystallite. Copyright © 2016 John Wiley & Sons, Ltd.     

水溶性CdTe量子点的稳态和纳秒时间分辨光致发光光谱

报道了以飞秒脉冲激光为激发光源的水溶性CdTe量子点(QDs)的稳态荧光光谱和纳秒时间分辨荧光光谱.实验发现CdTe量子点的荧光光谱峰值位置随激发波长变化发生明显移动，激发脉冲波长越长，荧光峰位红移越大.荧光动力学实验数据显示，在400nm和800nm脉冲激光激发下，水溶性CdTe量子点的荧光光谱中均含有激子态和诱捕态两个衰减成分，两者的发射峰相距很近，诱捕态的发射峰波长较长.在800nm脉冲激光激发下的诱捕态成分占总荧光强度的比重比400nm激发下的约高3倍，其相对强度的这种变化导致了稳态荧光发射峰位的红移. 关键词： CdTe 量子点 时间分辨 荧光光谱 上转换荧光     

Temperature‐dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP‐MOCVD have been studied by means of deep ultraviolet time‐integrated photoluminescence (PL) and time‐resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV‐AlGaN/AlGaN MQWs PL emission (E_p) exhibits a similarly anti‐S‐shaped behavior (blueshift – accelerated redshift – decelerated redshift): E_p increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E_p redshift tends towards zero. This temperature‐induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra

The photoexcited carrier dynamics and photoluminescence of the undoped InP and Fe implanted InP was studied by time-resolved reflection and photoluminescence spectra. The decay times of reflection recovery and the radiative recombination for Fe implanted InP are shorter than those of undoped InP. Considering the surface recombination, a model was developed to simulate the reflection recovery dynamics, it agrees with the experimental results very well. Moreover, we obtained the ambipolar diffusion coefficient and the surface recombination velocity by using the model. For Fe-doped InP, the surface recombination velocity is much larger than that for the undoped InP, which is probably due to Fe^2+/3+ trapping centers and the large surface band bending. The PL decay time for Fe implanted InP is shorter than that for undoped InP, which is ascribed to the capture centers introduced by metallic precipitates.     

Optical properties of conjugated polymer-ZnSe nanocrystal nanocomposites

Nanocomposites of poly[(2-methoxy,5-octoxy)1,4-phenylenevinylene]-zinc selenide (MOPPV-ZnSe) are synthesized by mixing the polymerization of 1,4-bis (chloromethyl)-2-methoxy-5-octoxy-benzene in the presence of ZnSe quantum dots. The resulting MOPPV-ZnSe nanocomposites possess a well-defined interfacial contact, thus significantly promoting the dispersion of ZnSe within the MOPPV matrix and facilitating the electronic interaction between these two components. Raman and UV--visible absorption spectra are influenced by the incorporation of ZnSe nanocrystals. High-resolution transmission electron microscopic and tapping-mode atomic force microscopic results show clearly the evidence for phase-segregated networks of ZnSe nanocrystals, which provide a large area of interface for charge separation to occur. Steady-state spectra of MOPPV-ZnSe nanocomposites are markedly quenched by the introduction of intimate polymer/ZnSe junctions. Time-resolved photoluminescence measurements show that the lifetime decays quickly, which further confirms the occurrence of charge transfer in MOPPV-ZnSe nanocomposites.     

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow nanoholes and injected with Ag/SiO₂ or Al nanoparticles. A 1.8 times increase in the photoluminescence and microcathodoluminescence signal from the GaN active region was observed for 100 nm diameter Al nanoparticles, the efficiency decreased compared to the reference planar samples for small Al nanoparticles of 30–40 nm diameter, and a moderate increase of 1.2 times was detected for Ag/SiO₂ nanoparticles. The observed phenomena are explained by the GaN emitter coupling with localized surface plasmons produced by metallic nanoparticles. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

ZnS中Te等电子中心的时间分辨光谱研究

用时间分辨光谱研究了很大的Te组分范围内的ZnS_1-xTe_x（x=00 05—085）合金的发光动力学特性，结果表明：不同形态的Te等电子中心具有不同的辐射复 合寿命，从几个ns到几十个ns的范围内变化，当x＝015左右时，寿命达到最大值（约 40ns）.其物理机理源于不同的Te等电子中心具有不同的局域化特性.当Te组分较小时，等 电子中心从Te₁逐渐演变到Te₂，Te₃或Te₄ 时，相应发光寿命增加，表现出不断增强 的激子发光局域化特性；而当Te组分较大时，Te原子团变得较大，其局域势与基体原子势的 相互作用增强，等电子中心的局域化特性减弱，而基体价带扩展态特征变得明显起来，相应 发光寿命逐渐减小.还研究了激子束缚能随Te组分的变化以及发光强度随温度的变化关系， 所得结果进一步支持了时间分辨光谱研究所得到的结论. 关键词： ZnS 等电子中心 时间分辨光谱 局域态     

Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

激光诱导时间分辨固体表面荧光光谱系统

采用斜射式激发样品光路结构,设计了应用于测试时间分辨固体表面荧光光谱系统。利用该系统研究了氧化锌薄膜在355 nm激光脉冲激发下的时间分辨固体表面荧光光谱。结果表明,该系统能够实现测量时间分辨固体表面荧光光谱,并由此测量了样品的固体表面荧光寿命。该系统结构简单可靠,灵敏度高,响应速度快。     

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al_0.07Ga_0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the “S-shape” dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition.     

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence(PL) peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.     

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.     

碘分子离子对态的时间分辨谱

本文用激光脉冲多光子激发的技术获得了碘分子高激发态Ｆ＇（０＾＋ｕ）（Ｔｅ＝５１７０６．７ｃｍ＾－１）的布居，并对该态１０个荧光辐射（３１０ｎｍ带）的时间分辨谱进行了测量。采用二步三光子的非线性激发模型对荧光时间分辨谱的数据进行处理，得到了离子对态Ｆ＇（０＾＋ｕ）的３１０ｎｍ荧光带的辐射寿命。     

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance--voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al_0.3Ga_0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schr?dinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to --3~V, the value of the relative permittivity decreases from 7.184 to 7.093.     

Linear and nonlinear characteristics of time-resolved photoluminescence modulation by terahertz pulse

The linear and nonlinear characteristics of time-resolved photoluminescence(PL) of n-type bulk semiconductor Ga As modulated with terahertz(THz) pulse are studied by using an ensemble Monte Carlo(EMC) method. In this paper the center energy valley(Γ valley) electron concentration changes with the pulse delay time, sampling time and the outfield are mainly discussed. The results show that the sampling time and the THz field should exceed certain thresholds to effectively excite photoluminescence quenching(PLQ). Adopting a direct current(DC) field makes the sampling time threshold shortened and the linear range of THz field-modulation PL expanded. Moreover, controlling the sampling time and the outfield intensity can improve the linear quality: with forward time, the larger outfield is used; with backward time, the smaller outfield is used. This study can provide a theoretical basis of THz field linear modulation in a larger range for new light emitting devices.     

Characterization of in-situ time-resolved optical spectra during excimer-laser crystallization

A real-time in-situ time-resolved (~1 ns) optical reflectivity and transmission (TRORT) measurement system combining two He–Ne probe lasers, a digital oscilloscope, and three fast photodiodes is developed to investigate the rapid phase-change processes of Si thin films during the excimer-laser crystallization (ELC). The changes in both reflectivity and transmission of Si thin films during ELC are recorded by the TRORT measurement system. Melting and resolidification behaviors of Si thin films during ELC are interpreted. The fall time of liquid Si is reduced with increase in the excimer-laser energy density, while the rise time of liquid Si remains approximately constant at 5 ns. The first small peak in the reflectivity spectrum is proved to be not a phenomenon of explosive crystallization.     

Comparison between photoluminescence spectroscopy and photoreflectance spectroscopy in CuGaSe2 epilayer

Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.