Bolometric effect in a waveguide-integrated graphene photodetector

Graphene is an alternative material for photodetectors owing to its unique properties.These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes.Unfortunately,due to the low absorption of light,the photoresponsivity of graphene-based photodetectors is usually low,only a few milliamps per watt.In this letter,we fabricate a waveguide-integrated graphene photodetector.A photoresponsivity exceeding0.11 A·W ~(-1) is obtained which enables most optoelectronic applications.The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect.Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A·W ~(-1).The absorption coefficient of the device is estimated to be 0.27 dB·μm ~(-1).     

光栅局域调控二维光电探测器

近年来,二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注.特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质,使其在下一代光电子器件领域具有广阔的应用前景.本文将主要介绍二维材料在光电探测领域上的应用优势,概述光电探测器的基本原理和参数指标,重点探讨光栅效应与传统光电导效应的区别,...     

Photoconductive ultraviolet detectors based on ZnO films

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant τ obtained from the curve fitting represents the time accumulation during the process. The neutralization of photogenerated holes by negatively charged oxygen ions plays a key role in the photoconductive characteristics of ZnO polycrystalline films.     

Graphene-based heterojunction for enhanced photodetectors

Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.     

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

Highly performance photodetector requires a wide range of responses of the incident photons and converts them to electrical signals efficiently. Here, a photodetector based on formamidinium lead halide perovskite quantum dots (e.g., FAPbBr₃ QDs)–graphene hybrid, aiming to take the both advantages of the two constituents. The FAPbBr₃ QD–graphene layer not only benefits from the high mobility and wide spectral absorption of the graphene material but also from the long charge carrier lifetime and low dark carrier concentration of the FAPbBr₃ QDs. The photodetector based on FAPbBr₃ QD–graphene hybrid exhibits a broad spectral photoresponse ranging from 405 to 980 nm. A photoresponsivity of 1.15 × 10⁵AW⁻¹ and an external quantum efficiency as high as 3.42 × 10⁷% are obtained under an illumination power of 3 µW at 520 nm wavelength. In detail, a high responsivity is achieved in 405–538 nm, while a relatively low but fast response is observed in 538–980 nm. The photoelectric conversion mechanism of this hybrid photodetector is investigated in the view of built‐in electric field from the QD–graphene contact which improves the photoconductive gain.     

Phonon dispersion of quasi-freestanding graphene on Pt(111)

High-resolution electron energy loss spectroscopy has been used to probe phonon dispersion in quasi-freestanding graphene epitaxially grown on Pt(111). Loss spectra clearly show different dispersing features related to both acoustic and optical phonons. The present results have been compared with graphene systems which strongly interact with the substrate, i.e. the nearly-flat monolayer graphene (MLG)/Ni(111) and the corrugated MLG/Ru(0001). We found that the phonon dispersion of graphene/Pt(111) reproduces well the behavior of pristine graphite. This could be taken as an indication of the negligible interaction between the graphene sheet and the underlying Pt substrate. The softening of out-of-plane modes observed for interacting graphene/metal interfaces does not occur for the nearly-free-standing graphene/Pt(111).     

Solution-processed Au@rGO/GaN nanorods hybrid-structure for self-powered UV,visible photodetector and CO gas sensors

Although metal nanoparticles (NPs) have been widely reported, Au NPs functionalized reduced graphene oxide (rGO)/GaN nanorods (NRs) for multi-functional applications are rarely discussed. The rGO is a well known transparent electrode and has been considering an alternative electrode to ITO in the current optoelectronic community. In this work, Au NPs functionalized rGO (Au@rGO)/GaN NRs hybrid structure probed for photodetector and CO gas sensing applications. The hybrid structure was characterized by scanning electron microscopy, transmission electron microscope, current-voltage characteristics, photo conductivity, and gas sensor measurements. The Au@rGO/GaN NRs showed higher photoresponsivity (λ = 382 nm, 516 nm) compared to rGO/GaN NRs at room temperature. The rising and falling times of Au@rGO/GaN NRs are faster than that of rGO/GaN NRs. The hybrid structure Au@rGO/GaN NRs exhibited high CO gas response compared to rGO/GaN NRs at room temperature (∼38% to the 20 ppm). Au NPs played an important role in terms of electronic and chemical changes in the hybrid structure for improving both photodetectors the CO gas response. Such a multi-functional hybrid device is an interest of various room temperature applications.     

载能氢原子与石墨(001)面碰撞过程中的能量传递行为的分子动力学研究

本文采用分子动力学方法研究了单一载能氢原子与石墨碰撞时氢原子被石墨反射、 吸附和石墨被氢原子穿透的发生系数以及碰撞中的能量传递机理. 研究发现: 与单层石墨相比, 多层石墨之间的长程相互作用增加了氢原子发生反射的能量范围, 尤其当入射能量大于20.0 eV时, 对反射过程的影响很明显; 当氢原子的入射能量大于25.0 eV时, 有一定的概率穿透四层石墨; 当氢原子入射能量高于28.0 eV时, 载能氢原子的能量传递给第二层石墨烯的比传递给第一层石墨烯的多. 这些结果对理解聚变反应中, 碳基材料的化学腐蚀及氚滞留有重要意义.     

超二代像增强器多碱阴极光电发射特性研究

通过测量超二代像增强器多碱阴极的光谱反射率和透射率,根据能量守恒定律计算得到了多碱阴极的光谱吸收率.结果表明,只有当光子的能量大于1.333 eV以后,多碱阴极的吸收率才开始快速增大.这说明多碱阴极的光谱吸收存在一个1.333 eV的长波吸收限,入射光的光子能量如果小于该吸收限,多碱阴极将不吸收.在多碱阴极的表面电子亲合势进一步降低的情况下,多碱阴极光电发射的长波理论阈值由长波吸收限所决定.多碱阴极在吸收光子之后的电子跃迁过程中,跃迁电子的能量增加小于所吸收入射光子的能量,即存在一个"能量损失".光子的能量越高,所激发的跃迁电子所处的能级越高,能量损失越大.同时光子的能量越高,跃迁电子所处的能级越高,电子跃迁的几率越低.多碱阴极的量子效率由吸收率、跃迁几率和跃迁能级、扩散过程中的能量损失等因素共同决定,因此多碱阴极的量子效率存在长波阈的同时也存在短波阈.多碱阴极的量子效率在2.11 eV达到最大值之后,随着光子能量的增加而单调减小,在3.6 eV时,量子效率减小到零.多碱阴极在3.6 eV时的吸收系数仍然很高,但由于电子跃迁的几率低,同时电子扩散过程中的能量损失大,导致尽管多碱阴极对短波具有较高的吸收系数,但量子效率仍然较低.因此对多碱阴极所吸收的光子能量中,转换成为光电导、晶格热振动等其他非光电发射形式能量的比例而言,短波较长波高,对光电发射的贡献率而言,短波较长波低.     

Dual-wavelength ultraviolet photodetector based on vertical(Al,Ga)N nanowires and graphene

Due to the wide application of UV-A(320 nm–400 nm) and UV-C(200 nm–280 nm) photodetectors, dual-wavelength(UV-A/UV-C) photodetectors are promising for future markets. A dual-wavelength UV photodetector based on vertical(Al,Ga)N nanowires and graphene has been demonstrated successfully, in which graphene is used as a transparent electrode.Both UV-A and UV-C responses can be clearly detected by the device, and the rejection ratio(R254 nm/R450 nm) exceeds35 times at an applied bias of-2 V. The short response time of the device is less than 20 ms. Furthermore, the underlying mechanism of double ultraviolet responses has also been analyzed systematically. The dual-wavelength detections could mainly result from the appropriate ratio of the thicknesses and the enough energy band difference of(Al,Ga)N and Ga N sections.     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

GaN紫外光探测器

评述了近年来在ＧａＮ紫外光探测器方面的研究进展。介绍了ＧａＮ光电导探测器、ｐ－ｎ结二极管探测器、肖特基势垒探测器以及ＭＳＭ结构探测器的制备方法、光电参数及研究现状。     

石墨烯量子点的磁性及激发态性质

利用密度泛函理论在B3LYP/6-31G(d)基组水平上研究了具有zigzag边界的石墨烯量子点,结果表明不同大小的石墨烯量子点的基态都是具有磁性的自旋三重态.其磁性一方面来源于zigzag边界上占有凸出位置的碳原子,另一方面来源于带有孤对电子的碳原子.从整体上看,除6b结构外,其他结构的能隙随着苯环数量的增加逐渐减小,而附加电荷却使体系能隙明显减小.用含时密度泛函理论(TD-DFT)对能隙为3.83 eV的由六个苯环排列成的三角形结构进行了激发态的计算,发现第十七激发态强度最大,能量为3.93 eV,对 关键词： 石墨烯量子点 磁性 能隙 激发态     

Br掺杂对石墨烯带隙影响的实验研究

石墨烯独特的结构和性能使其在纳米电子、半导体器件等领域成为研究的热点,但其零带隙的特性严重限制了其应用.采用化学气化沉积法制备了多层石墨烯,并使用溴蒸汽对制备的多层石墨烯进行掺杂,分析研究了溴蒸汽化学掺杂对石墨烯带隙的影响.为了对比溴蒸汽掺杂对石墨烯带隙的影响,使用633 nm He-Ne光分别测量了石墨烯掺杂前和掺杂后的拉曼光谱,根据拉曼光谱计算了石墨烯费米能级移动与掺杂溴蒸汽之间的关系.实验结果表明:溴蒸汽掺杂对石墨烯拉曼光谱G带产生影响;随着掺杂溴蒸汽体积的增加,拉曼光谱G带向高频移动并逐渐趋于稳定;G带和2D带强度比也迅速增加,并最终趋于稳定.费米能级的移动与G峰位置成线性关系,利用G峰峰值位置与费米能级实验关系式计算了溴掺杂后石墨烯的费米能级,分析了化学掺杂对石墨烯带隙的影响.     

石墨烯在Al_2O_3(0001)表面生长的模拟研究

基于密度泛函理论的广义梯度近似法,对用化学气相沉积法在蓝宝石(α-Al_2O_3)(0001)表面上生长石墨烯进行理论研究.研究结果表明:CH_4在α-Al_2O_3(0001)表面上的分解是吸热过程,由CH_4完全分解出C需要较高能量及反应能垒,这些因素不利于C在衬底表面的存在.在α-Al_2O_3(0001)表面,石墨烯形核的活跃因子并不是通常认为的C原子,而是CH基团.通过CH基团在α-Al_2O_3(0001)表面上的迁移聚集首先形成能量较低的(CH)_x结构.模拟研究(CH)_x对揭示后续石墨烯的形核生长机理具有重要意义.     

Characterization of a hybrid Li-ion anode system from pulsed laser deposited silicon on CVD-grown multilayer graphene

A hybrid anode system for lithium (Li) ion battery applications based on pulsed laser deposited silicon films on chemical vapor deposited multilayer graphene (MLG) layers on a nickel foam substrate was electrochemically characterized. The as-grown material was directly fabricated into an anode without a binder, and tested in a half-cell configuration. There is evidence of the participation of both the multilayer graphene and the Si in the transport of Li ions. Even when cycled under stressful voltage limits that accelerate degradation, the MLG–Si films displayed higher stability than Si-only anodes, especially at higher cycling rates. Unlike the Si cells that display capacity fade even within the first few cycles, the MLG–Si cells show a very narrow spread in capacity, indicative of the role of the graphene layers in improving adhesion of the Si and acting as a compliant buffer for its volume expansion. Stable average specific capacities of ~1,200 mAh/g per total weight of MLG + Si, over 80 cycles at C/5 rate, were obtained for the MLG–Si anode. Pre- and post-cycling characterization of the anode materials revealed the differences between the two systems.     

Density functional theory study on the adsorption of alkali metal ions with pristine and defected graphene sheet

The graphene-based materials along with the adsorption of alkali metal ions are suitable for energy conversion and storage applications. Hence in the present work, we have investigated the structural and electronic properties of pristine and defected graphene sheet upon the adsorption of alkali metal ions (Li⁺, Na⁺, and K⁺) using density functional theory (DFT) calculations. The presence of vacancies or vacancy defects enhances the adsorption of alkali ions than the pristine sheet. From the obtained results, it is found that the adsorption energy of Li⁺ on the vacancies defected graphene sheet is higher (3.05?eV) than the pristine (2.41?eV) and Stone–Wales (2.50?eV) defected sheets. Moreover, the pore radius of the pristine and defected graphene sheets are less affected by metal ions adsorption. The increase in energy gap upon the adsorption of metal ions is found to be high in the vacancy defected graphene than that of other sheets. The metal ions adsorption in the defective vacancy sheets has high charge transfer from metal ions to the graphene sheet. The bonding characteristic between the metal ions and graphene sheet are analysed using QTAIM analysis. The influence of alkali ions on the electronic properties of the graphene sheet is examined from the Total Density of States (TDOS) and Partial Density of States (PDOS).     

Novel BeZnO Based Self‐Powered Dual‐Color UV Photodetector Realized via a One‐Step Fabrication Method

In this work, we fabricated a novel BeZnO based dual‐color UV photodetector through a one‐step electron beam evaporation of asymmetric Ti/Au pair. A dual‐phase BeZnO alloy film with dual bandgap of ∼3.5 eV (∼355 nm) and ∼4.6 eV(∼270 nm) was artfully utilized as active layer to realize dual‐color response. This photodetector shows a noticeable photovoltaic characteristic and can be utilized as an excellent self‐powered device. The device exhibits two cut‐off response wavelengths at ∼275 nm and ∼360 nm under zero bias, which are corresponding to UVA and UVC region, respectively. According to the dynamic response spectra under UV radiation, the device presents excellent stability and reproducibility without external power supply. In addition, the device has an ultrafast response speed, with a rise time of ∼35 μs and a decay time of ∼880 μs. Finally, a physical model based on energy band theory is proposed to demonstrate that the self‐powered behavior is attributed to the asymmetric Schottky barrier heights caused by the hole‐trapping process occurred in electrode/BeZnO interface. To the best of our knowledge, this is the first report on BeZnO based self‐powered UV photodetector. Our findings demonstrate a novel and facile route to realize high performance self‐powered UV photodetectors for multipurposes.     

1.55-mum and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum , 10-mW laser diode. The corresponding quantum efficiency is 14.4%.     

Manipulation of inherent characteristics of graphene through N and Mg atom co-doping; a DFT study

First-principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of nitrogen (N) and magnesium (Mg) atom co-doped graphene systems. We observed that, N and Mg atom co-doping in graphene, introduces half-metallic properties in the electronic structure of graphene, introduces ferromagnetism behavior along with new trends in optical properties of graphene. Doping site and concentration of N and Mg atoms in graphene was changed and resulting effects of these changes on aforementioned properties were investigated. Through density of states plots we observed that, Mg atom sp orbitals mainly induced magnetic moments in graphene. It was revealed that, N/Mg atoms substitution in graphene introduces a red shift in absorption spectrum towards visible range and a finite absorption coefficient quantity value in 0 to 3 eV and 7 to 11 eV energy intervals is also produced, that is unavailable for absorption spectrum of intrinsic graphene. Moreover, N/Mg atoms co-doping produces increment in the reflectivity parameter of graphene in low lying energy region, while producing diminishing behavior in the higher energy range. These results offer a possibility to tune electronic, magnetic and optical characteristics of graphene sufficiently for utilization in graphene based spintronic and optoelectronic devices.