Study on the structure dependent ultrafast third-order optical nonlinearity of GeS2–In2S3 chalcogenide glasses

The results of the femtosecond time-resolved optical Kerr at 820 nm in GeS₂–In₂S₃ chalcogenide glasses indicate that the response time in GeS₂–In₂S₃ glasses is subpicosecond, which is predominantly due to the distortion of the electron cloud. The value of χ⁽³⁾ in 0.95GeS₂–0.05In₂S₃ glass is also as large as 2.7 × 10⁻¹³ esu, and it reduces with the addition of In₂S₃, which may be ascribed to the microstructure evolution of GeS₂–In₂S₃ glasses. It is deduced that the intrinsic [Ge(In)S₄] tetrahedral structure units that possess the high hyperpolarizability may do great contribution to the enhancement of third-order optical nonlinearity while [S₃Ge–GeS₃] ethane-like molecular units make no considerable contribution to that in femtosecond time scale. These GeS₂–In₂S₃ and GeS₂–In₂S₃-based chalcogenide glasses would be expected to be the promising materials for all-optical switching devices.     

20GeS2·80Sb2S3硫系玻璃的析晶行为及动力学机理研究

实现玻璃微晶化过程控制的基础是要充分认识其析晶行为及动力学机理. 利用示差扫描量热法和析晶热处理等手段, 研究发现 20GeS₂·80Sb₂S₃硫系玻璃属于表面析晶, 在268℃(T_g+30℃)下热处理60 h, 可以获得表面约40 μm的Sb₂S₃晶层复合玻璃陶瓷样品. 在此基础上, 利用非等温法从理论上分析该玻璃的析晶动力学机理. 计算得到其析晶活化能E_c为(223.6±24.1)kJ·mol^-1, 在热处理温度(268℃)下的析晶速率常数K为1.23×10^-4 s^-1, 属于较难析晶的玻璃组成; 玻璃的晶体生长指数m和晶体生长维数n均为2, 表明其Sb₂S₃相的析晶行为是二维生长过程, 与析晶实验结果完全相符. 由此可知, 对于Sb₂S₃晶体复合的硫系玻璃陶瓷样品可通过玻璃粉末压片烧结、带铸法或丝网印刷法制备获得, 为今后功能硫系玻璃的开发提供实验依据和理论指导. 关键词： 硫系玻璃 微晶化 析晶动力学 析晶行为     

Ge-As-S硫系玻璃的结构与性能调控

制备了系列具有不同化学配比特征的Ge-As-S硫系玻璃,并研究了玻璃的结构、折射率和光学带隙(Eg).Ge-As-S玻璃具有以[Ge S_4]四面体和[As S_3]三角锥为骨架结构单元相互交联形成的连续网络结构,当S过量时,结构中出现S链或S_8环;当S不足时,结构中形成As_4S_4/As_4S_3分子,甚至出现大量AsAs/Ge-Ge同极键.玻璃的组成元素在2—10μm波段的摩尔折射度分别为R_(Ge)=9.83—10.42 cm~3/mol,RAs=11.72—11.87 cm~3/mol和R_S=7.78—7.86 cm3/mol.Ge-As-S玻璃的折射率与密度和组成元素的摩尔折射度之间存在较好的定量关系,可根据该定量关系在1%偏差内对玻璃的折射率进行预测或调控.提出了采用玻璃粉末的漫反射光谱确定可靠Eg的方法,通过该方法可获得玻璃的强吸收数据用于确定Eg.Ge-As-S玻璃的Eg与玻璃的平均键能之间存在较好的关联,S含量较高的玻璃更倾向于具有较大的平均键能,因此具有较大的Eg.     

Structure determination, magnetic and optical properties of a new chromium(II) thioantimonate, [Cr((NH2CH2CH2)3N)]Sb4S7

The chromium(II) antimony(III) sulphide, [Cr((NH₂CH₂CH₂)₃N)]Sb₄S₇, was synthesised under solvothermal conditions from the reaction of Sb₂S₃, Cr and S dissolved in tris(2-aminoethyl)amine (tren) at 438 K. The products were characterised by single-crystal X-ray diffraction, elemental analysis, SQUID magnetometry and diffuse reflectance spectroscopy. The compound crystallises in the monoclinic space group P2₁/n with a=7.9756(7), b=10.5191(9), c=25.880(2) Å and β=90.864(5)°. Alternating SbS₃³⁻ trigonal pyramids and Sb₃S₆³⁻ semi-cubes generate Sb₄S₇²⁻ chains which are directly bonded to Cr(tren)²⁺ pendant units. The effective magnetic moment of 4.94(6)μ_B shows a negligible orbital contribution, in agreement with expectations for Cr(II):d⁴ in a ⁵A ground state. The measured band gap of 2.14(3) eV is consistent with a correlation between optical band gap and framework density that is established from analysis of a wide range of antimony sulphides.     

GeS2-In2S3硫系玻璃的物化性质与晶化行为研究

认识玻璃组成-性能-结构之间关系是玻璃科学中经久不衰的研究课题之一. 在制得(100-x) GeS₂-xIn₂S₃ (x=10, 15, 20, 25或30 mol%) 系列玻璃和玻璃陶瓷样品的基础上, 利用可见-近红外透过光谱, DSC, XRD和Raman光谱等测试技术表征了随组份变化的光学带隙, 玻璃转变温度以及晶化行为等, 并结合GeS₂-Ga₂S₃玻璃研究结果探讨了Ga, In 元素及其形成的网络结构对玻璃性质的影响.研究发现, 在硫系玻璃中In比Ga对光学带隙和玻璃转变温度等性质的影响要大. 它们所形成玻璃的晶化行为也截然不同, 但与其各自的材料相图有着密切的联系. 利用偏振拉曼光谱获得玻璃网络中的基本结构单元信息.最后, 结合材料相图, 玻璃随组成变化的物化性质和晶化行为以及基本网络结构单元的认识, 探讨了玻璃的化学拓扑与网络拓扑之间的联系, 为今后研究提供一种新的研究思路.     

Nonlinear refractive index measurements in antimony–sulfide glass films using a single beam nonlinear image technique

The nonlinear refractive index, n₂, of films based on the new glass system Sb₂O₃–Sb₂S₃ was measured at 1064 nm with laser pulses of 15 ps, using a single-beam nonlinear image technique in presence of a phase object. The films were prepared from bulk glasses by RF-sputtering. A large value of n₂ = 3 × 10⁻¹⁵ m²/W, which is three orders of magnitude larger than for CS₂, was determined. The result shows the strong potential of antimony–sulfide glass films for integrated nonlinear optics.     

新型硒化锑材料及其光伏器件研究进展

硒化锑(Sb₂Se₃)是一种二元单相化合物, 原料储量大、毒性低、价格便宜; 同时其禁带宽度合适(～1.15 eV), 吸光系数大(>10⁵ cm^-1), 长晶温度低, 非常适合制作新型低成本低毒的薄膜太阳能电池, 理论光电转换效率可达30%以上. 目前文献报道的Sb₂Se₃薄膜太阳能电池效率已达3.7%, 初步证明了Sb₂Se₃材料在薄膜太阳能电池应用方面的巨大潜力. 本文综述了近年来Sb₂Se₃太阳能电池的研究进展, 着重介绍了Sb₂Se₃的材料特性和薄膜制备及相关理论研究, 阐述了不同结构电池器件的研究进展, 并对其发展趋势进行了展望.     

First-principles calculations of nitrogen-doped antimony triselenide: A prospective material for solar cells and infrared optoelectronic devices

This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb₂Se₃ crystal. When one and two N atoms are introduced into the Sb₂Se₃ lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb₂Se₃ from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants ε1(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb₂Se₃is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.     

Material design of new lithium ionic conductor, thio-LISICON, in the Li2S–P2S5 system

A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li₂S–P₂S₅ system; the new solid solution with the composition range 0.0≤x≤0.27 in Li_3+5xP_1−xS₄ was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li_3+5xP_1−xS₄ showed the highest conductivity value of 1.5×10⁻⁴ S cm⁻¹ at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol⁻¹ which is characteristic of high ionic conduction state. The extra lithium ions in Li₃PS₄ created by partial substitution of P⁵⁺ for Li⁺ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li₃PS₄ (x=0.0 in Li_3+5xP_1−xS₄) and Li₄P_0.8S₄ (x=0.2 in Li_3+5xP_1−xS₄); this conductivity behavior is similar to other thio-LISICON family with the general formula, Li_xM_1−yM_y′S₄ (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.     

些V/S,V/Fe/S和Mn/O簇合物溶液化学行为的NMR研究

报道我们对某些V/S,V/Fe/S和Mn/O簇合物溶液化学的核磁研究.(Et₄N)[V₄S₄(C₄H₈NCS₂)₆](1)的¹H NMR谱包含三个宽峰,δ4.77,5.17和7.57,分别归属为端基与桥基配体的α-H.游离配体信号的出现表明了溶液中发生配体与溶剂分子的交换反应.对一系列[VFe₃S₄(R₂ NCS₂)₄]^-簇合物(R₂=OC₄H₈(2),Et₂(3))进行了¹H NMR表征.钒与三个铁中心的配体氢谱被分别归属.对NMR谱的时间跟踪发现位于δ19.6(2)以及δ34.2(3)的信号逐渐增长,这意味着新物种形成.合成反应的动态NMR跟踪指认了新物种为Fe₄S₄(R₂ NCS₂)₄.提出了溶液中簇骼金属原子交换机理.包含H₂O和NO₃配体的单核锰bpy配合物(4)的氢谱指示出这些单齿配体的可交换性.它促使配合物4成为含有两个单核Mn分子的包容化合物.     

四元硫化物Cu2Zn(Ti,Zr, Hf)S4:一类新颖光伏材料

采用第一性原理电子结构方法研究了四价过渡金属Ti, Zr和Hf替代Cu₂ZnSnS₄(CZTS)中Sn原子以及Se替代S原子所得到的四元硫族化合物的电子结构、光学性质和晶体结构的稳定性. 实验上用Se替代CZTS中部分S得到的Cu₂ZnSnS_4-xSe_x(CZTSSe)作为光吸收材料, 可以进一步提高光伏效率. 我们计算表明用Se替代S后, CZTSe的价带顶明显下移, 并接近Cu(In, Ga) Se₂ (CIGS)价带顶位置. 与CZTSe的电子结构特征一样, Cu₂Zn(Ti, Zr, Hf)S₄四元硫化物的价带顶与母体材料CZTS相比也向低能移动, 并接近CIGS价带顶位置. 由于高光伏效率要求窗口材料ZnO、缓冲层材料和光吸收材料的价带顶和带隙满足一定的渐进的变化关系, 因此可以预见用Cu₂Zn(Ti, Zr, Hf)S₄作光吸收材料可以有效地提高甚至接近CIGS的光伏效率. 通过计算弹性常数和声子谱, 以及有限温度下第一性原理分子动力学模拟, 发现Cu₂Zn(Ti, Zr, Hf)S₄的结构稳定性与CZTS相近. 进一步计算Cu₂Zn(Ti, Zr, Hf)S₄与不同缓冲层间和窗口材料与缓冲层间的反射系数, 并讨论了ZnSe, In₂S₃, ZnS作为缓冲层材料和TiO₂作为窗口材料对光伏效率可能的影响.     

硒化锑薄膜太阳电池的模拟与结构优化研究

采用wx-AMPS模拟软件对硒化锑(Sb_2Se_3)薄膜太阳电池进行建模仿真,将CdS, ZnO和Sn02的模型应用到Sb_2Se_3太阳电池的电子传输层中.结果显示,应用CdS和ZnO都能实现较高的器件性能,并发现电子传输层电子亲和势(Xe-ETL)的变化能够调节Sb_2Se_3太阳电池内部的电场分布,是影响器件性能的关键参数之一.过高或者过低的Xe-ETL都会使电池的填充因子降低,导致电池性能劣化.当Xe-ETL为4.2eV时,厚度为0.6μm的Sb_2Se_3太阳电池取得了最优的7.87%的转换效率.应用优化好的器件模型,在不考虑Sb_2Se_3层缺陷态的理想情况下,厚度为3μm的Sb_2Se_3太阳电池的转换效率可以达到16.55%(短路电流密度J_(SC)=34.88 mA/cm~2、开路电压V_(OC)=0.59 V、填充因子FF=80.40%).以上模拟结果表明,Sb_2Se_3薄膜太阳电池在简单的器件结构下就能够获得优异的光电性能,具有较高的应用潜力.     

Ultra-broadband modulation instability gain characteristics in As_2S_3 and As_2Se_3 chalcogenide glass photonic crystal fiber

Based on the designed As_2Se_3 and As_2S_3 chalcogenide glass photonic crystal fiber(PCF) and the scalar nonlinear Schrdinger equation,the effects of pump power and wavelength on modulation instability(MI) gain are comprehensively studied in the abnormal dispersion regime of chalcogenide glass PCF.Owing to high Raman effect and high nonlinearity,ultra-broadband MI gain is obtained in chalcogenide glass PCF.By choosing the appropriate pump parameter,the MI gain bandwidth reaches 2738 nm for the As_2Se_3 glass PCF in the abnormal-dispersion region,while it is 1961 nm for the As_2S_3 glass PCF.     

Rydberg原子nS1/2→(n+1)S1/2双光子激发EIT-AT光谱

主要研究了热原子蒸气池中铯Rydberg原子nS_1/2→(n+1)S_1/2微波耦合的双光子光谱.铯原子基态(6S_1/2)、第一激发态(6P_3/2)、Rydberg态(69S_1/2)形成阶梯型三能级系统,弱探测光作用于基态到激发态6S_1/2→6P_3/2的跃迁,强耦合光则作用于6P_3/2→69S_1/2的Rydberg跃迁形成电磁感应透明(EIT)效应,实现对Rydberg原子的光学探测.频率fMW=11.735 GHz的微波场耦合69S_1/2→70S_1/2的Rydberg跃迁,形成微波双光子光谱.利用EIT-AT分裂光谱研究微波电场强度对双光子光谱的影响.研究表明:在强微波场作用时,EIT-AT分裂与微波场功率成正比,而弱微波场时的EIT-AT分裂与微波场功率成非线性依赖关系,理论计算与实验测量结果相一致.本文的研究对微波电场的精密测量具有一定的指导意义.     

Bandgap narrowing in the layered oxysulfide semiconductor Ba_3Fe_2O_5Cu_2S_2: Role of FeO_2 layer

A new layered Cu-based oxychalcogenide Ba_3Fe_2O_5Cu_2S_2 has been synthesized and its magnetic and electronic properties were revealed. Ba_3Fe_2O_5Cu_2S_2 is built up by alternatively stacking [Cu_2S_2]~(2-) layers and iron perovskite oxide[(FeO_2)(BaO)(FeO_2)]~(2-)layers along the c axis that are separated by barium ions with Fe~(3+) fivefold coordinated by a square-pyramidal arrangement of oxygen. From the bond valence arguments, we inferred that in layered CuC h-based(Ch =S, Se, Te) compounds the +3 cation in perovskite oxide sheet prefers a square pyramidal site, while the lower valence cation prefers the square planar sites. The studies on susceptibility, transport, and optical reflectivity indicate that Ba_3Fe_2O_5Cu_2S_2 is an antiferromagnetic semiconductor with a Ne′el temperature of 121 K and an optical bandgap of 1.03 eV. The measurement of heat capacity from 10 K to room temperature shows no anomaly at 121 K. The Debye temperature is determined to be 113 K. Theoretical calculations indicate that the conduction band minimum is predominantly contributed by O 2p and 3 d states of Fe ions that antiferromagnetically arranged in FeO_2 layers. The Fe 3d states are located at lower energy and result in a narrow bandgap in comparison with that of the isostructural Sr_3Sc_2O_5Cu_2S_2.     

The thermal spreading of antimony oxides onto Fe2O3

The uniform antimony-rich surface layer on Fe₂O₃ was carried out via thermal spreading of Sb₂O₃ and Sb₂O₄. TG–DTA results indicate that the oxidation temperature of Sb₂O₃ was decreased ca. 100 K due to thermal spreading effect. Although Sb₂O₄ is almost catalytically inert for oxidation of isobutane and Fe₂O₃ is a typical non-selective catalyst for this reaction, the formation of antimony-rich layer suppresses the combustion reactions and favors the partial oxidation reactions. When Sb₂O₄ instead of Sb₂O₃ was used as antimony resource, the enrichment of antimony on Fe₂O₃ surface was much lower. However, the reaction atmosphere of isobutane oxidation enhances antimony spreading over Fe₂O₃ surface. According to Mars–Van Krevelen mechanism, some Sb₂O₄ in catalysts could be intermediately reduced into Sb₂O₃ during reaction of isobutene oxidation, which thermal spreading is much easier. As shown by Raman results, the Sb₂O₄ that has been spread on Fe₂O₃ surface is probably amorphous.     

分子动力学模拟钠硼硅酸盐玻璃电子辐照诱导的结构演化效应

钠硼硅酸盐玻璃作为高放射废物玻璃固化体的候选材料之一,已有大量实验对该类玻璃开展了电子或重离子的辐照效应研究.然而,在理论计算与模拟方面的工作却很少,目前主要集中于重离子的辐照效应,对电子的辐照效应的模拟尚未见报道.本文利用分子动力学工具提出一种新的方法,以实现对电子辐照诱导的玻璃结构演化进行模拟.该方法基于实验中玻璃的结构变化特点,即实验中的拉曼结果已经证实:在大剂量的电子辐照后的玻璃中存在分子氧的事实,由于这些分子氧不会与其他粒子发生相互作用,因而可以通过从体系中逐步地移除一定数量氧原子的方式,以达到模拟大剂量电子辐照的情形,进而得到电子辐照后的玻璃的结构信息.模拟结果显示:随着移除氧原子的数量增加,玻璃中的Si—O—Si平均键角逐渐减小;而且玻璃中的小环数量会因氧的逐渐减少而逐渐增加;玻璃中部分[BO4]结构会转变为[BO3]结构,最终这种转变会达到饱和;大量移除氧之后,玻璃中的钠元素也出现明显的相分离.这些模拟辐照的玻璃结构特性能较好地与实验中的硼硅酸盐玻璃电子辐照诱导的结构变化符合.因此,本文提出的方法有望为通过分子动力学模拟硼硅酸盐玻璃的电子辐照效应提供新思路.     

Rydberg原子nS1/2→(n+1)S1/2双光子激发EIT-AT光谱

主要研究了热原子蒸气池中铯Rydberg原子nS_1/2→(n+1)S_1/2微波耦合的双光子光谱.铯原子基态(6S_1/2)、第一激发态(6P_3/2)、Rydberg态(69S_1/2)形成阶梯型三能级系统,弱探测光作用于基态到激发态6S_1/2→6P_3/2的跃迁,强耦合光则作用于6P_3/2→69S_1/2的Rydberg跃迁形成电磁感应透明(EIT)效应,实现对Rydberg原子的光学探测.频率fMW=11.735 GHz的微波场耦合69S_1/2→70S_1/2的Rydberg跃迁,形成微波双光子光谱.利用EIT-AT分裂光谱研究微波电场强度对双光子光谱的影响.研究表明:在强微波场作用时,EIT-AT分裂与微波场功率成正比,而弱微波场时的EIT-AT分裂与微波场功率成非线性依赖关系,理论计算与实验测量结果相一致.本文的研究对微波电场的精密测量具有一定的指导意义.     

钼铁硫原子簇化合物的合成与结构化学Ⅲ*以Fe(SR)6为桥的双立方烷化合物的磁学研究

以Fe(SR)₆为桥的系列钼铁硫双立方烷化合物(Et₄N)₄[(MoFe₃S₄(SR)₃)₂Fe(SR)₆],R=ph,o-tol,m-tol和p-tol的磁极矩和¹H-NMR数据作了报导和分析,并与类似的化合物作比较,讨论了它们的电子结构和磁结构。在类立方烷单元[MoFe₃S₄]中未配对电子有明显的离域性,过渡金属原子之间有很强的反铁磁偶合作用。整个分子形成三个基本上相互独立的磁性中心。     

D,L-苯丙氨酸乙酯氯亚铂酸盐的晶体结构

在SYNTEX四圆衍射仪上收集到2788个独立的衍射点。晶体属单斜晶系,空间群为C_2h⁵-P2₁/a,a=12.006(2)?,b=8.398(2)?,c=14.261(5)?,β=93.98(2)°,Z=2。铂放在对称中心的特殊位置上,然后用差值Fourier法得到两套非氢原子坐标位置,这是由于铂参数特殊化所致。首先我们运用结构化学的键长、键角知识,选择了两个氯原子合理的坐标参数,而将其余成对的非氢原子坐标参数都输入,令其坐标参数固定,而将占有率各给0.5,并同各向同性热参数一起参与最小二乘修正,结果两套坐标的原子占有率明显分化,其中一套占有率上升接近于1,而另一套占有率下降,通过这一筛选,确定了结构的初始模型,用块矩阵最小二乘法修正,最后的R因子为0.038。结构测定表明铂采用dsp²杂化轨道成键,取四配位的正方形构型。在晶体中有机部分和[PtCl₄]^2-络离子是靠氮原子和氯原子之间形成氢键而联系起来的,因此此化合物是苯丙氨酸乙酯和四氯合铂离子的加合物。 关键词：