引入阱结构改善有机发光器件的效率

利用阱结构作为发光层,阱由8-羟基喹啉铝和 4,4′-N,N′–dicarbazole-biphenyl交替蒸发长成,改善了器件的效率,这归因于增加空穴和电子在薄发光层的堆积,形成的激子有效地被限制在薄的发光层中发光.器件的最大电流效率在外加电压8V时达到4.1cd/A,与一般异质结器件相比效率提高了2倍多.这说明在适当阱数时用简单办法可提高器件的效率.     

Improving the current efficiency of organic light-emitting device utilizing the well structure

We have demonstrated efficient organic electroluminescent (EL) devices with well Structure as the emitting layer. The well structure fabricated by alternating deposition of constituent tris-(8-hydroxyquinoline) aluminum (Alq₃) and 4,4-N,N-dicarbazole-biphenyl (CBP) layers improved the current efficiency. The enhanced efficiency can be attributed to the strong accumulation of electrons and holes in the thin Alq₃ layer, which leads to an increase of the exciton formation and exciton recombination probability. The single well device exhibits the highest current efficiency of 4.1 cd/A,which is more than twice than that of the conventional heterostructure device. It is an effective and simple way to improve the efficiency of EL devices by utilizing well structure as the emitting layer with proper well number.     

掺杂PVK光电特性研究

将磷光材料三-（2-苯基吡啶）-铱[Ir（ppy）3]掺杂在聚乙烯基咔唑（PVK）中作为发光层,制作了多层有机电致发光器件。采用常规的光电测量方法,研究其光致发光及电致发光特性,得到了激子形成截面随电压的变换关系。     

Change of the dominant luminescent mechanism with increasing current density in molecularly doped organic light-emitting devices

We have fabricated and measured a series of electroluminescent devices with the structure of ITO/TPD/Eu(TTA)₃phen (x):CBP/BCP/ALQ/LiF/Al, where x is the weight percentage of Eu(TTA)₃phen (from 0% to 6%). At very low current density, carrier trapping is the dominant luminescent mechanism and the 4% doped device shows the highest electroluminescence (EL) efficiency among all these devices. With increasing current density, Förster energy transfer participates in EL process. At the current density of 10.0 and 80.0 mA/cm², 2% and 3% doped devices show the highest EL efficiency, respectively. From analysis of the EL spectra and the EL efficiency-current density characteristics, we found that the EL efficiency is manipulated by Förster energy transfer efficiency at high current density. So we suggest that the dominant luminescent mechanism changes gradually from carrier trapping to Förster energy transfer with increasing current density. Moreover, the conversion of dominant EL mechanism was suspected to be partly responsible for the EL efficiency roll-off because of the lower EL quantum efficiency of Förster energy transfer compared with carrier trapping.     

荧光染料和磷光染料激子形成截面的比较

为了比较单线态激子与三线态激子形成截面的大小,作者将荧光染料4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) 和磷光材料factris-(2-phenylpyridine) iridium [Ir(ppy)₃]共掺杂在N-vinylcarbazole (PVK)中作为发光层,制作了多层有机电致发光器件。通过对其光致发光及电致发光特性的研究,计算出Ir(ppy)₃激子的形成截面比DCJTB激子的形成截面大得多。     

发光层厚度变化的高效红色有机电致磷光器件

以铱配合物红色磷光体为掺杂剂，制备了基于TPBi材料的红色电致磷光器件,其结构为ITO/CuPc/NPB/TPBi:Btp₂Ir(acac)/ TPBi/Alq/LiF/Al.取得了在x=0.62，y=0.35的色度下，效率最高达2.43cd/A；电流密度为20mA/cm²时，亮度431cd/m²；电流密度为400mA/cm²时，亮度4798 cd/m²的结果.讨论了不同的发光层厚度影响器件色度和 关键词： 三线态 红光掺杂剂 有机电致磷光 T-T湮没     

Efficiency improvement of red organic light-emitting diodes using a blue phosphorescent exciton blocking layer

Quantum efficiency of red organic light-emitting diodes was improved using a blue phosphorescent emitting layer as an exciton blocking layer. Compared with 8.1% quantum efficiency of standard devices without an exciton blocking layer, high quantum efficiency of 14.1% was obtained using a blue phosphorescent emitting layer between the hole transport layer and the red emitting layer.     

电场诱导聚合物分子取向对单线态和三线态激子形成截面的影响

通过对聚乙烯咔唑(PVK) 掺杂三(2-苯基吡啶)铱(Ir(ppy)₃)和4-二氰亚甲基-2-叔丁基-6-(1,1,7,7-四甲基久咯呢定基-9-烯基)-4H-吡喃(DCJTB)，PVK 掺杂DCJTB和PVK掺杂Ir(ppy)₃聚合物在成膜时高压电场作用下分子取向变化对单线态和三线态激子形成截面的研究，发现，随着成膜时电场的增强，单线态激子的形成截面在增加，而三线态激子的形成截面却减小. 关键词： 分子取向 激子形成截面 三线态 单线态     

ZnS薄膜参数对有机/无机复合发光器件特性的影响

半导体量子点(QDs)具有发光效率高和发光波长可调等特点。采用胶体CdSe QDs作电致发光器件的有源材料,TPD(N,N′-biphenyl-N,N′-bis-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine)作空穴传输层,ZnS作电子传输层,研究了有机/无机复合发光器件ITO/TPD/CdSe QDs/ZnS/Ag的电致发光特性。TPD和CdSe QDs薄膜采用旋涂方法、ZnS薄膜采用磁控溅射方法沉积,器件表面平整。CdSe QDs的光致发光和电致发光谱峰位波长均位于～580 nm,属于量子点的带边激子发光。我们与以前的ITO/ZnS/CdSe QDs/ZnS/Ag发光器件结构进行了对比,发现新的器件结构的电致发光谱没有观察到QDs表面态的发光,而且新器件的发光强度是ITO/ZnS/CdSe QDs/ZnS/Ag结构的～10倍。发光效率的提高归因于碰撞激发与载流子注入两种发光机制并存的结果：一方面电子经过ZnS 层加速后,碰撞激发CdSe QDs发光;另一方面,空穴从TPD层注入CdSe QDs 与QDs中激发的电子复合发光。我们进一步研究了ZnS电子加速层厚度对发光特性的影响,选择ZnS薄膜的厚度分别是80,120 和160 nm,发现随着ZnS层厚度增大,器件启亮电压升高,EL强度增大,但是击穿电压降低。EL峰位随着ZnS厚度的减小发生明显蓝移,对上述实验现象进行了机理解释。     

铜配合物的光物理与电致发光性能

以中心原子为铜的磷光材料Cu4(C≡Cph)4L2[L=1，8-bis(diphenylphosphino)-3，6-dioxaoctane](简称Cu4)作为掺杂材料，选用空穴传输材料聚乙烯基咔唑(PVK)为母体材料，制作结构为ITO／Cu4PVK／TAZ／Mg：Ag／Ag的双层器件。其发光颜色随掺杂的变化而改变，在较高掺杂浓度的条件下，可观察到单纯Cu4的发光，即实现了单重态到三重态的能量转移。着重讨论了主客体材料间的能量转移过程，并研究了影响器件效率的外界因素如氧气的猝灭对Cu4发光强度的影响。     

Characteristics of Organic Photo- and Electro-Luminescent Devices with Double Mirrors

The luminescent characteristics of organic thin films sandwiched between two mirrors were measured. The optical length between the two mirrors was set according to the scale of the luminescent wavelength in order to compose a microcavity structure. Photoluminescence (PL) and electroluminescence (EL) from tris(8-hydroxyquinoline)aluminum (ALQ) were enhanced at distinct resonating wavelengths, and suppressed in other regions. Then, narrow and enhanced luminescent peaks were observed from the devices with the microcavity structure. Based on their injection current dependence, the primary cause of these spectra was speculated to be spontaneous emission. An EL sample with the microcavity structure for multicolor emissions was fabricated.     

一种新型铕配合物的有机电致发光性能

研究了一种新型的稀土金属铕配合物EuL₁L₂的光致发光和电致发光特性。将这种铕配合物掺杂到PVK:PBD中,制备成结构为ITO/PVK:PBD:EuL₁L₂/PBD/Alq₃/Mg:Ag/Ag的器件,对其电致发光性能进行研究,发现Eu³⁺离子和Alq₃的相对发光强度随PVK:PBD:EuL₁L₂和Alq₃之间的激子阻挡层PBD的厚度变化而变化,通过调节PBD的厚度,得到了色纯度较高的红色电致发光器件,其光谱具有显著的Eu³⁺离子的光谱特征。     

Magnetic-field dependence of the electroluminescence of organic light-emitting diodes: a competition between exciton formation and spin mixing

We explore the magnetoelectroluminescence (MEL) of organic light-emitting diodes by evaluating the magnetic-field dependent fraction of singlet excitons formed. We use two- and multisite polaron-hopping models with spin mixing by hyperfine fields and different singlet and triplet exciton formation rates k(S) and k(T). A huge MEL is predicted when exciton formation is in competition with spin mixing and when k(T) is significantly larger than k(S). This competition also leads to a low-field structure in the MEL that is in agreement with recent experiments.     

同时掺杂磷光和荧光染料的白色有机电致发光器件性能研究

以磷光染料Ir(piq)₂(acac)作为发光掺杂剂,掺入空穴传输性主体材料NPB中得到红色发光层,荧光材料TBP掺入到主体CBP中作为蓝色发光层,制备了结构为ITO/NPB/NPB：Ir(piq)₂(acac)/CBP/CBP：TBPe/BCP/ALq/Mg：Ag的双发光层白色有机电致发光器件.其中ALq₃、未掺杂的NPB和CBP及BCP层分别作为电子传输层、空穴传输层和激子阻挡层.实验中通过调节发光层厚度及Ir(piq)_{2关键词： 磷光 激子阻挡层 有机电致发光}     

Novel Field Emission Organic Light Emitting Diodes with Dynode

This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.     

Non-doped phosphorescent white organic light-emitting devices with a quadruple-quantum-well structure

Non-doped white organic light-emitting devices (WOLEDs) with a quadruple-quantum-well structure were fabricated. An alternate layer of ultrathin blue and yellow iridium complexes was employed as the potential well layer, while potential barrier layers (PBLs) were chosen to be 2,2',2''-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) or N,N'-dicarbazolyl-3,5-benzene (mCP) combined TPBi. On adjusting the PBLs for device performance comparison, the results showed that the device with all-TPBi PBLs exhibited a yellow emission with the color coordinates of (0.50,0.47) at a luminance of 1000 cd/m², while stable white emission with the color coordinates of (0.36,0.44) was observed in the device using mCP combined TPBi as the PBLs. Meanwhile, for the WOLED, with a reduced efficiency roll-off, a maximum luminance, luminous efficiency, and external quantum efficiency of 12,610 cd/m², 10.2 cd/A, and 4.4%, respectively, were achieved. The performance improvement by the introduction of mCP PBL was ascribed to the well confined exciton and the reduced exciton quenching effect in the multiple emission regions.     

多层结构的阴极修饰层对有机电致发光器件的性能改善

为提高有机电致发光器件（OLEDs）的阴极电子注入效率,我们设计了新型的阴极杂化修饰层,其结构为Bphen∶LiF/Al/MoO₃,将其应用到器件ITO/NPB/Alq₃/Al中,参考器件的电子注入层选用传统材料LiF。实验研究表明,与传统的阴极修饰层LiF相比,基于这种杂化结构的阴极修饰层非常有效。测试了器件的电致发光光谱（EL谱）,其峰值位于534 nm,发光来自于Alq₃,实验中我们可以观察到明亮的绿色发光。将其与传统参考器件的EL谱进行对比,在电流密度40 mA·cm-2下,两个器件的电致发光光谱是一致的。在0～100 mA·cm-2范围内,对器件的EL谱进行了测试。实验结果表明,随着电流密度的增加,器件的发光增强,但是EL谱的形状和谱峰的位置是固定不变的。与参考器件对比,基于杂化修饰层的器件的发光性能更好。研究表明,杂化修饰层的最佳参数为Bphen∶LiF(5 nm; 6%)/Al(1 nm)/MoO₃(5 nm),在测试范围内,器件的最大电流效率和最大功率效率分别为4.28 cd·A-1和2.19 lm·W-1,相比参考器件提高了25.5%和23.7%。器件的电流密度-电压特性曲线表明阴极杂化修饰层可以增强电子的注入,使器件中的载流子更加平衡,从而提高了器件的发光性能。从两个角度对器件效率的增强进行了理论方面的论证。一方面利用阴极杂化修饰层的作用机制来解释。在HML中,LiF能填充Bphen的电子陷阱,增强电流的注入,同时HML也能限制空穴的传输,减小空穴电流。另一方面从电荷平衡因子的角度,HML增强了电子的注入,使得器件的电荷平衡因子增大,空穴和电子的平衡性更好。实验研究表明,阴极杂化修饰层很好地增强了器件的效率。     

Oscillator strength of type-II light-hole exciton in InxGa1−xAs/GaAs strained single quantum wells

We have investigated the excitonic properties of In_0.15Ga_0.85As/GaAs strained single quantum wells by using photoreflectance spectroscopy and a variational calculation method. We clearly detected the photoreflectance signal of the type-II light-hole exciton, which consists of an electron confined in the InGaAs layer and a light hole located in the thick GaAs layer, in addition to the type-I heavy-hole exciton confined in the InGaAs layer. The calculated results of the overlap integral of the envelope function in the type-II light-hole exciton predict that the oscillator strength is remarkably enhanced with decreasing the InGaAs-layer thickness. This is demonstrated by the layer-thickness dependence of the photoreflectance intensity of the type-II light-hole exciton.     

Exciplex emission in the blend of two blue luminescent materials

Organic light-emitting diodes (OLEDs) based on the blend of two blue luminescent materials N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine (NPB) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) were fabricated. The electroluminescence (EL) spectra of this device showed a new emission that is different from their intrinsic exciton emission. Compared with the photoluminescence (PL) spectra of single layer NPB and PBD, respectively, there was an apparent red shift in that of their blend. Thus the exciplex formation in the blend can be concluded due to the similar emission in both PL and EL spectra. The exciplex formation process and the effect of applied voltage were analyzed by Gaussian fitting.     

插入电荷控制层对蓝色OLED发光性能的提高

用蓝色有机荧光材料N⁶,N⁶,N¹²,N¹²-tetrap-tolylchrysene-6,12-diamine （DNCA）作为发光层,在发光层中间以及发光层与电子传输层之间插入2-methyl-9,10-di（2-napthyl）anthracene （MADN） 和9,10-di（2-naphthyl）anthracene （ADN） 作为电荷控制层,制备了结构为ITO/NPB（40 nm）/DNCA（15 nm）/MADN（3 nm）/DNCA（15 nm）/ADN（3 nm）/Bphen（30 nm）/LiF（0.8 nm）/Al（120 nm）的蓝色有机电致发光器件（OLED）。该器件的最大电流效率和最大亮度分别为5.6 cd/A和23 310 cd/m²。与传统的单发光层器件相比,最大电流效率和最大亮度分别提高了70%和87%。器件发光性能的提高可归结于两个电荷控制层在整个器件中的协同作用。第一电荷控制层MADN的作用主要是将发光层区域分成两个部分,从而扩大了激子在发光层中的复合区域;第二电荷控制层ADN可以有效地将空穴限制在发光层中,避免了激子在电子传输层中形成的无辐射跃迁从而提高了器件的发光性能。