Electrical properties of PbxSn1‐xS thin films prepared by hot wall deposition method

The Pb_xSn_1‐xS (x = 0 – 0.25) thin films were prepared on glass substrates by hot wall vacuum deposition. The films were polycrystalline monophase in nature and had orthorhombic crystal structure. The thickness of the films was about 2‐3 μm. The temperature dependences of the conductivity were measured in the temperature range from 150 to 420 K. The films revealed p‐type of conductivity. The Seebeck coefficient and conductivity values of the films was in the range of α = 6 – 360 μV/K and σ = 4.8×10^‐5 – 1.5×10^‐2 Ω^‐1·cm^‐1, respectively, at room temperature depending on concentration of the lead in the films. The lead atoms created the substitution defects Pb_Sn in the crystal lattice of the Pb_xSn_1‐xS. These defects formed the donor energy levels in the band gap. The activation energy of the films increased in the range ΔE_a = 0.121 – 0.283 eV with increasing of the lead concentration. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and improved electrochemical performance of LiCo1‐xSnxO2 (x= 0 to 0.1) powders

Layered intercalation compounds LiCo_1‐xSn_xO₂ (x= 0 to 0.1) have been prepared using a simple combustion route method. X‐ray diffraction patterns and Laser Raman spectrum suggest that the synthesized materials had the R‐3m structure. Scanning electron images show that particles are well‐crystallized with a size distribution in the range of 50‐100 nm. The room temperature electrical conductivity of the sample increased with Sn content. For LiCo_1‐xSn_xO₂(x = 0, 0.01, 0.03, 0.05 and 0.1), the first discharge capacity increased with increase in Sn content. Among these samples, LiCo_0.95Sn_0.05O₂had produced the best performance of all others with a stable reversible capacity of 186 mAhg^‐1 after 30 cycles. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Doping of PbTe and Pb1−xSnxTe with gallium and indium

Precipitations in Indium and Gallium-doped PbTe, SnTe and Pb_1−xSn_xTe are investigated. The compositions of the precipitated phases are PbGa₆Te₁₀ SnGa₆Te₁₀ and PbIn₆Te₁₀ for binary compounds. For Pb_1−xSn_xTe the precipitated phase composition corresponds to the continuous solid solutions Pb_1−zSn_zGa₆Te₁₀. Basic properties of the new compounds are determined. Their resistivity being of 5 ÷ 6 orders higher than that for Pb(Sn)Te, the anomalous transfer phenomena, observed in highly Ga(In)-doped samples can be explained on the basis of the barrier model.     

Substitution effects on ferroelectric,leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Bi_4‐xSb_xTi₃O₁₂ (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by sol‐gel method. The effects of various Sb³⁺ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi_4‐xSb_xTi₃O₁₂ (x≠0) thin films prefer (117) orientation. The substitution Sb³⁺ for Bi³⁺ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi_4‐xSb_xTi₃O₁₂ films display exciting electric properties. Especially when x = 0.04, the film Bi_3.96Sb_0.04Ti₃O₁₂ has achieved the max 2Pr value of 87μC/cm². This film also has a better anti‐fatigue characteristic, which can be up to 10¹⁰ switching cycles without fatigue. The leakage current density improved with J = 8×10⁻⁸ A/cm².     

Phase Formation,Crystal Structure and Electrical Properties of La212 Type Compound Substituted by Silver or Praseodymium

The La212 type compounds substituted by silver or praseodymium are prepared by solid state reaction method. It is found that compounds La_2‐xSr_xCa_0.5Pr_0.5Cu₂O₆, La_1.6Pr_0.4Ca_1‐xSr_xCu₂O₆ and La_2‐xPr_xCa_0.5Sr_0.5Cu₂O₆ can be formed for x=0.4‐1.1, 0‐0.5 and 0‐1.5, respectively. A new member of La212 type compounds, La_2‐xAg_xCaCu₂O₆ is also prepared. Their structures are verified by Rietveld structure refinement to belong to the structure type of La212 cuprate oxide with space group I4/mmm. Their electrical properties are investigated. La_1.65Ag_0.35CaCu₂O₆ displays metal‐like behavior and its resistivity decreases with the decrease of temperature from 300K to 4.2K.     

Contributions to the surface preparation of semiconductor materials of low hardness

Starting from the general demands made upon semiconductor surfaces (measuring samples, substrates) and the critical material properties, the boundary conditions for the surface preparation of substances of low hardness are stated and technological variants for Bi_1−xSb_x, Pb_1−xSn_xTe, and PbS_1−xSe_x are presented. The results show that almost defectfree surfaces of a high quality can be produced in a repeatable way. The depths of significant and detectable damages are determined depending on the technique in question.     

Effect of liquid state on the crystallization of Zr65Al7.5Ni10Cu17.5 metallic glass

The correlation between the quenching temperature and the crystallization of the Zr₆₅Al_7.5Ni₁₀Cu_17.5 metallic glass was examined. The electrical resistivity and the thermal property were measured to monitor the structural change of the samples quenched at the temperature of 1473 K, 1573 K, 1673 K and 1773 K, respectively. The consistent results of DSC and d(ρ_(T)/ρ₀)/dT‐T curves indicated different crystallization behaviors of the samples. For the samples quenched from 1773 K, the increase in ΔT_x, T_rg and γ imply higher glass forming ability. Moreover, according to the XRD patterns of samples annealed at different temperatures, the melt temperature influences the formation of crystallized phases of amorphous Zr₆₅Al_7.5Ni₁₀Cu_17.5 alloy.     

Magneto‐transport properties of polycrystalline YBa2(Cu1‐xMx)3O7‐δ (M = B and Mn)

The magnetic and transport properties of polycrystalline YBa₂ (Cu_1‐xM_x)₃ O_7‐δ (M = B and Mn) superconductor was investigated. Samples of YBa₂(Cu_1‐xB_x)₃O_7‐δ doped with several concentrations of boron B(x = 0.05 and 0.1) were investigated using magnetization measurements. A YBa₂(Cu_1‐xMn_x)₃O_7‐δ sample doped with Mn with concentration of x = 0.02 was investigated using current‐voltage (I‐V) measurements. Our results on the YBa₂(Cu_1‐xB_x)₃O_7‐δ samples reveal a considerable increase in the hysterisis width of the magnetization, M versus the applied magnetic field H with increasing boron concentration. The lower critical field was also found to be enhanced by boron doping. The critical current density, J_c was found to be significantly enhanced in the Mn‐doped sample. The enhancement of J_c was found to be more significant at the lower temperatures for all applied magnetic fields used (0 Oe, 300 Oe, and 500 Oe). Thus, chemical doping is suggested to enhance the vortex pinning forces in the YBCO samples. From the resistivity (R‐T) measurements, chemical doping of the samples was found to have no significant effect on the critical temperature, T_c. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of Ag addition on the glass-forming ability of Mg–Cu–Y metallic glass alloys

The effect of Ag substitution for Cu on the glass forming ability was studied in Mg₆₅Cu_25−xAg_xY₁₀ (x=0,5,10,15,20,25) alloys by using thermal analysis and X-ray diffractometry (XRD). With increasing x from 0–25, the glass transition temperature, T_g, of melt spun Mg₆₅Cu_25−x Ag_xY₁₀ alloys increases slightly from 426 to 436 K, and the crystallization temperature, T_x, decreases from 494 to 459 K, resulting in a decrease in the supercooled liquid region. However, a partial substitution of Cu by Ag in Mg₆₅Cu₂₅Y₁₀ promotes the glass formation. The maximum diameter for amorphous phase formation by injection casting increases from 4 mm in Mg₆₅Cu₂₅Y₁₀ to 6 mm in Mg₆₅Cu₁₅Ag₁₀Y₁₀ alloy. Both amorphous Mg₆₅Cu₁₅Ag₁₀Y₁₀ alloys prepared by melt spinning and injection casting showed similar crystallization process during continuous heating in differential scanning calorimetry (DSC). The relationship between the critical diameter for the formation of an amorphous phase in injection casting and the parameters reflecting glass-forming ability was examined.     

The effect of Sn addition on the glass-forming ability of Cu-Ti-Zr-Ni-Si metallic glass alloys

The effect of Sn substitution for Ni on the glass-forming ability was studied in Cu₄₇Ti₃₃Zr₁₁Ni_8−xSn_xSi₁ (x=0,2,4,6,8) alloys by using thermal analysis and X-ray diffractometry. With increasing x from 0 to 8, the glass transition temperature, T_g, of melt-spun Cu₄₇Ti₃₃Zr₁₁Ni_8−xSn_xSi₁ alloys increased gradually from 720 to 737 K. On the other hand, the crystallization temperature, T_x, increased from 757 K at x=0 to 765 K at x=2, being nearly same with further increase of x. Partial substitution of Ni by Sn in Cu₄₇Ti₃₃Zr₁₁Ni₈Si₁ promotes the glass formation. Both amorphous Cu₄₇Ti₃₃Zr₁₁Ni_8−xSn_xSi₁ alloys prepared by melt spinning and injection casting showed similar crystallization process during continuous heating in DSC. Temperature range of undercooled liquid region exhibits good correlation with the critical diameter for the formation of an amorphous phase in injection casting.     

On the Bridgman growth of lead–tin selenide crystals with uniform tin distribution

The application of T–x–y phase diagram for the control of the crystal composition of alloy crystals during Bridgman growth is illustrated using (Pb_1−xSn_x)_1−δSe_1+δ solid solutions as an example. Within the framework of the proposed approach, the axial segregation can be minimised if the feed composition is chosen in the regions of phase diagram where the iso-mole-fraction lines are perpendicular to isotherms. For the system Pb–Sn–Se the component distribution in crystals grown from a melt with δ=0, a Se-rich melt (δ>0) and a metal-rich melt (δ<0) are discussed. Uniform crystals with x=(0.03–0.15)±0.01 can be obtained from Se-rich melt (Se enrichment is 12–5 at%Se, T=1280–1200 K). The use of metal-rich melt allows obtaining crystals with moderate segregation of 3–5 mol% SnSe for x=0.13–0.23 at 3–9 at% of metal enrichment and T=1270–1200 K and for x=0.35–0.45 at 25–35 at% of metal enrichment and T=1120–1050 K.     

Epitaxial Sn1‐xPbxS nanorods on iso‐compositional thin films

Based on SnS (Herzenbergite) – SnPbS₂ (Teallite) mixed crystals with orthorhombic layer structures, thin films and lawns of Sn_1‐xPb_xS nanorods were produced using hot wall vacuum deposition method (HWVD). The lawn was formed onto the surface of an underlying thin Sn_1‐xPb_xS film which is build by differently oriented blocks. The density of rods arranged like a lawn depends on the metal ratio and substrate temperature. X‐ray and TEM analysis of the epitaxial material showed preferential (001) orientation perpendicular to the surface of the glass substrate. The roughness of the films measured by atomic force microscopy was in the range of R_q = 49.5–86.3 nm depending on lead concentration The rods were about 500 nm high and 300 nm in diameter. As revealed by TEM‐EDX experiments the droplet at the tip of rods consists of tin. Therefore it is assumed the rods grew via a self‐consuming vapor–liquid–solid (VLS) mechanism. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films

The aim of this work is to study the influence of Ge addition on the optical and electrical properties in eutectic SbTe thin films (with the compositions: Sb₇₀Te₃₀, Ge₂Sb₇₀Te₂₈, Ge₅Sb₇₀Te₂₅ and Ge₁₀Sb₆₅Te₂₅) using visible optical reflectance, ellipsometry measurements, near infrared transmittance spectra, and four probe electrical resistivity measurements. From near infrared transmittance measurements the optical band gap was determined using Tauc’s expression for amorphous materials, a value of about 0.47 eV was obtained without any clear dependence on the Ge content. All amorphous films have approximately the same reflectance value, however the contrast ratio between the crystalline and amorphous phases decrease with increase of Ge. Using in situ four probe measurements versus temperature the dependence of the activation energy of conductance and the onset of the crystallization temperature have been determined for different materials. Four probe measurements have shown that the resistivity of amorphous films increases with increase of Ge. The results obtained have shown that optical and electrical properties of SbTe films with near eutectic composition change with the Ge content and depending on the application, in either optical or electrical memory devices, the most suitable composition needs to be determined.     

High‐strength bimodal ultrafine Ti‐based alloys with enhanced ductility

Bulk Ti₆₅Fe₃₅ and (Ti₆₅Fe₃₅)_96.15‐xSn_3.85Nb_x (x = 0, 3, 5 and 7 at.%) alloys were prepared by cold crucible levitation melting, and tested in compression at room temperature. The Sn and Nb modified hypereutectic Ti‐Fe alloys exhibited improved mechanical properties under compression. (Ti₆₅Fe₃₅)_93.15Sn_3.85Nb₃ alloy displayed an ultimate compressive strength of 2.7 GPa and a compressive plastic strain of 15%. Electron microscope observations revealed Ti‐Fe(Sn,Nb) alloys having a bimodal microstructure with micrometer‐scale primary TiFe dendrites distributed in an ultrafine eutectic (β‐Ti+TiFe) matrix. The orientation relationship of β‐Ti with TiFe phases is TiFe (011)[100] ∥ β‐Ti (011)[100]. The improved mechanical properties are attributed to the morphology of the phase constituents and the larger lattice mismatches between β‐Ti and TiFe phases due to the additions of Sn and Nb.     

Elastic properties of GeSbSe glasses

The results of the measurement of transverse and longitudinal sound velocities on eigth glass compositions of the GeSbSe system are reported and their elastic moduli evaluated. While the velocities, elastic moduli and Debye temperature show variation with composition for Ge_xSb₁₀Se_90?x glasses, they are essentially constant for the glasses with stoichiometric compositions. The dependence of bulk modulus on mean atomic volume has been analysed. Both the mean atomic volume and the type of bonding are found to be effective in determining the composition dependence of bulk modulus.     

Investigations for Sn diffusion in Pb1−xSnxTe and PbTe

By annealing Pb_1−xSn_xTe and PbTe isothermally in a quartz ampoule Sn diffused from Pb_1−xSn_xTe into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: D_PbSnTe = 1.5 · 10⁻¹ exp (−1.8 eV/kT) cm² s⁻¹ (0,14 < x < 0,18) D_PbTe = 5,5 · 10⁻⁴ exp (−1.5 eV/kT) cm² s⁻¹. N-type layers are observed at the surface of Pb_1−xSn_xTe specimens.     

Physical properties of Zn‐ 22 wt.% Al‐ x wt.% Ce melt spun eutectoid alloy

Zn‐ 22 wt.% Al (Zn ‐ 40 Al in atomic%) eutectoid alloys with different Cerium (Ce) contents of 0, 1, 2, and 6 (in wt.%), 0.35, 0.70 and 2.1 (in atomic%) were rapidly solidified by melt spun technique. The effects of high cooling rate and alloying element (Ce) on microstructure of the studied alloys were analyzed by X‐ray diffractometry (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. The results showed that the dendrites as well as grains size were refined by the additions of Ce. The main phases in melt spun alloys were α‐Al and η‐Zn, in addition to intermetallic CeZn₅ and Al₄Ce. Additional metastable intermetallic Al_0.71Zn_0.29 phase has been observed only for melt spun alloy of 6 wt.% Ce content. XRD peaks of melt spun alloys demonstrated a considerable broadening with percentage of Ce due to the grain refinement and lattice distortion. Moreover, increase of Ce content results in a decrease of Al lattice constant which could be related to formation of supersaturated solid solution of Zn and/or Ce in α‐Al. Crystallite size of all phases were in the range of nanometer scale which reflects the role of the high cooling rate and the existence of Ce as alloying element for producing nanocrystalline structure. Resistance measurements of melt spun alloys show that the relative resistance rate for the alloys of higher Ce content relaxed faster to lower value than that of lower Ce content. Electrical resistance and microstructure exhibit strongly Ce content dependence.     

The composition dependence of electrical switching behavior of Ge7Se93−xSbx glasses

Bulk Ge₇Se_93?xSb_x (21 ? x ? 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge₇Se_93?xSb_x glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current–voltage (I–V) characteristics. The observed threshold behavior of Ge₇Se_93?xSb_x glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further, the high switching voltages and fluctuations in the I–V characteristics of Ge–Se–Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge₇Se_93?xSb_x glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.     

Mechanical properties and ion irradiation of bulk amorphous Zr55Cu30Al10Ni5 alloy

The bulk amorphous Zr₅₅Cu₃₀Al₁₀Ni₅ alloy is one of the widely studied Zr-based alloys due to very attractive thermal and mechanical properties. Alloy ribbons and bulk samples were synthesized by Cu mould casting and characterized by SEM/EDS, DSC and XRD. Mechanical properties like Vicker’s hardness, nanohardness and elastic modulus etc. were measured. Ion irradiation of the samples was carried out to enhance the surface properties without altering the amorphous nature of the bulk material. Ion irradiation by singly charged Ar⁺ enhanced the hardness as well as elastic modulus considerably.     

Ni59Zr20Ti16Sn5 amorphous alloy obtained by melt spinning and mechanical alloying

Amorphous Ni₅₉Zr₂₀Ti₁₆Sn₅ alloys were fabricated by melt spinning and by mechanical alloying (MA) techniques. Additionally the melt spun ribbon was powdered by ball milling. Differential scanning calorimetry (DSC) measurements revealed two or three-steps crystallization of the amorphous alloys. MA powders exhibited the lowest crystallization temperature of the first DSC peak, the melt spun ribbon – the highest one. On the other side, the lowest value of activation energy of crystallization was calculated for ball milled ribbon. Further studies are needed to clarify the differences in thermal stability and crystallization behavior of the alloys.