Synthesis and crystal growth of sillenite phases in the Bi2O3 ‐ TiO2 ‐ Nb2O5 system

The synthesis of Bi₂O₃‐Nb₂O₅ sillenite phase (BNbO) and the solubility of this phase with Bi₁₂TiO₂₀ was investigated by solid‐state reaction synthesis and niobium doped Bi₁₂TiO₂₀ (BTO:Nb) crystals were grown by the Top Seeded Solution Growth (TSSG) technique. The structures of polycrystalline compounds were checked by X‐ray powder diffraction method at room temperature. The correct composition of the sillenite phase stabilized with niobium was determined as Bi₁₂[Nb_0.17Bi_0.83]O_19.7 (BNbO) with unit cell parameter a = 10.261(2) Å. The system BTO‐BNbO is poorly soluble, but niobium doped BTO crystals were grown from the liquid composition 10Bi₂O₃ : xTiO₂ : (1‐x)/2 Nb₂O₅, with x = 0.95 and 0.90. A niobium concentration limit in the liquid phase is established in order to grow BTO:Nb with good crystalline quality. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of pure and lithium doped L‐alanine single crystals for NLO devices

Single crystals of pure and lithium substituted L‐alanine are successfully grown by slow evaporation method at constant temperature of 32°C. The effect of lithium dopant on crystal properties has been studied. Powder and single crystal XRD analysis confirms the structure and change in lattice parameter values for the doped crystals. The crystals were characterized by solubility studies, density, melting point measurements, FTIR and UV‐Vis‐NIR techniques. Thermal and mechanical stability of crystals were tested by TGA/DTA and micro hardness analysis. NLO activity of the crystals is found to be increased in the presence of lithium ions. The dielectric constant and dielectric loss of the crystals were studied as a function of frequency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of photorefractive Bi12TiO20 single crystals

Photorefractive Bi₁₂TiO₂₀ single crystals of high optical quality were grown in a resistive heating furnace from high temperature nonstoichiometric (10:1) solutions of Bi₂O₃ and TiO₂ at pulling rates 0.3–0.8 mm/h at rotation 20–30 rpm along the <001> and <011> axis. Powder X-ray analysis, Laue method, and electron-probe microanalysis were used for characterization. BTO crystals have the bcc structure of sillenite type with a₀ = 10.178(8) Å. The chemical composition of the crystals can be written down as Bi_{12.1 ± 0.2}Tio_{0.96 ± 0.09}O_20.1. Natural optical activity ρ of BTO crystals is 6.3 ± 0.2 deg/mm at λ = 0.633 μm and 11.9 ± 0.2 deg/mm at λ = 0.5145 μm, optical absorption coefficient α = 0.42 ± 0.04 cm⁻¹ at λ = 0.633 μm and linear electro-optic coefficient r₄₁ = r₅₂ = r₆₃ = 5.3 pm/V. Fanning effect in the “fiber-like” BTO sample was studied and double phase conjugation with conversion efficiency up to 8% was observed in a wide range of incidence angles of the pump at λ = 0.633 μm for 2 × 3 mW input light power.     

Flux growth and characterization of Ti‐ and Ni‐doped forsterite single crystals

Forsterite monocrystals doped with Ti and Ni were grown by the flux growth technique. A suitable mixture of flux (MoO₃, V₂O₅, Li₂CO₃) and nutrient was slowly cooled down to 750 °C from 1250 °C or 1350 °C. The crystals were then characterized by powder and single‐crystal X‐ray diffraction, scanning electron microscopy and differential scanning calorimetry (DSC). Variations observed in crystal size were attributed by both the varying experimental conditions in which they had been obtained, and to the amount of Ni substituted for Mg in the structure. High abundances of doped forsterite required a cooling rate of 1.8 K h^‐1. These synthetic, well‐characterized Ti and Ni doped forsterite crystals may have potential for exploitation in industrial fields. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermoelectric properties of Tl‐doped Bi2Se3 single crystals

The single crystals of the ternary system based on Bi_2‐xTl_xSe₃ (nominaly x = 0.0‐0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ_⊥c , Hall coefficient R_H (B∥c), and Seebeck coefficient S (ΔT ⊥c). The measurements indicate that by incorporating Tl in Bi₂Se₃ one lowers the concentration of free electrons and enhances their mobility. This effect is explained in terms of the point defects in the crystal lattice – formation of substitutional defects thallium on the site of bismuth Tl_Bi and the decrease of concentration of selenium vacancies V_Se⁺². We also discuss the temperature dependence of the power factor σS² of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to the parental Bi₂Se₃. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of pure and doped nonlinear optical l‐arginine acetate single crystals

Single crystals of organic nonlinear optical material of pure, Cu²⁺ and Mg²⁺ doped L‐arginine acetate (LAA) were successfully grown by slow evaporation method at room temperature. The UV‐Vis‐NIR spectra of pure and doped LAA indicate that these crystals possess a wide optical transmission window from 240‐1600 nm. Non‐linear optical studies reveal that the SHG efficiency of LAA is nearly three times that of KDP. The dielectric response of the samples was studied in the frequency region 100 Hz to 2 MHz and the influence of Cu²⁺ and Mg²⁺ substitution on the dielectric behaviour had been investigated. Photoconductivity study proves that both pure and Cu²⁺ and Mg²⁺ doped LAA crystal exhibit positive photoconductivity. It is evident from the Vickers hardness study that the hardness of the crystal decreases with increasing load both for pure and doped samples. ESR studies confirmed the incorporation of Cu²⁺ into LAA and the value of g‐factor was found to be 2.1654. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and dissolution of equally‐sized insulin crystals

A protocol for growing sets of nearly uniform size crystals was devised and tested experimentally. The experiments were centered on insulin because of its medical significance however the method is applicable to other substances as well (C.N. Nanev, V.D. Tonchev, F.V. Hodzhaoglu, Protocol for growing insulin crystals of uniform size, J. Cryst. Growth 375 (2013)10–15). Now, both growth and dissolution of equally‐sized crystals are described quantitatively by a common analytical model. In our model the emphasis is put on the dissolution case when crystals number and/or size are sufficiently large to secure reaching solubility, while some non‐dissolved crystalline substance is still remaining. Quantitative results are obtained for the relations between dimensionless values of crystal size, solution concentration and time elapsed, the assumption simplifying our calculations being that the crystals retain their shape during the entire dissolution process.     

Growth of large doped Bi12SiO20 crystals

The conditions for growing Cr-, Mn-, Fe-, Co-, Ni-, and Cr + Al-doped BSO crystals from a stoichiometric melt by the Czochralski method have been the subject of research. A decrease of the absorption coefficient along the growth axis was observed in undoped crystals of 50 mm diameter and 150 mm long, which is indicative of melt stoichiometry change in the course of the growth run. The transmission and reflection spectra of different crystals were measured and the absorption coefficients was determined in the range 0.38–0.70 μm. When Fe dopant concentration exceeds a limit value, the absorption spectrum is blue-shifted relative to the undoped case and the absorption coefficient decreases. Co, Cr, Mn, and Cr + Al dopants produce a red shift and increase the absorption coefficient. Combined Cr + Al doping shift the absorption spectrum to the blue region as compared to Cr-only doping with the same Cr concentration.     

Growth and characterization of magneto‐optical YFeO3 crystals

The floating zone growth of magneto‐optical crystal YFeO₃ has been investigated. The polycrystalline feed rod was prepared by a pressure of 250MPa and sintering at about 1500°C. A crack‐ free YFeO₃ single crystal has been successfully grown. The crystal preferred to crystallize along <100> direction with about 10° deviation. The X‐ray rocking curve of the crystal has a FWHM of 24 arcsec, confirming the high crystal quality of the sample. The (100) plane was etched by hot phosphoric acid and the dislocation density was about 10⁴/cm². A thin outer layer with Y₂O₃‐rich composition was found at the periphery of as‐grown crystals, which was attributed to the Fe₂O₃ evaporation during growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of pure and Co2+‐doped Li2B4O7 single crystals

Pure and Co‐doped Li₂B₄O₇ (LBO) single crystals were grown by the Czochralski method. Starting concentrations of Co₂O₃ in the melt were: 0.5, 0.85 and 1 mol% relative to Li₂CO₃. Technological factors affecting the quality of both crystals were discussed. Optical absorption and EPR spectra were analyzed to define the oxidation states and lattice sites of cobalt ions. It was shown that Co²⁺ ions enter LBO crystal at octahedral Li⁺ site positions. Low‐temperature EPR measurements revealed that two types of Co²⁺ complexes can be distinguished in the Li₂B₄O₇:Co crystals. Additional absorption calculated for γ‐irradiated crystals showed V_k type defects suggesting the creation of cation vacancies during growth. The concentration of the defects decreases with an increase of intentional Co concentration. Introduction of cobalt ions to LBO crystal is limited probably by the formation of cobalt ion pairs or by the entrance of cobalt as Co⁺. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and electrical characterization of L‐arginine added KDP and ADP single crystals

Potassium dihydrogen orthophosphate (KDP) and ammonium dihydrogen orthophosphate (ADP) single crystals added with L‐arginine have been grown by the solution methods. DC and AC electrical measurements were carried out at various temperatures along both a‐ and c‐ directions. Results indicate an increase of the electrical parameters with the increase of temperature which can be attributed mainly to the increase of thermally generated hydrogen bond vacancies (L. defects). Also, the present study indicates that L‐arginine addition leads to reduction of electrical parameters of KDP and ADP single crystals which can be attributed mainly to the decrease of L‐defects due to creation of additional hydrogen bonds by the impurity in random directions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and properties of Ba‐doped KDP crystals

KDP crystals were rapidly grown from solution doped with different Ba²⁺ concentrations. The effects of Ba²⁺ on the growth rate, morphology and quality of KDP crystals were discussed. Significant changes in shapes and volume of the grown crystals have been observed. During the growth process, defect region expands gradually with the increasing Ba²⁺ concentration. Samples were cut from different parts of the as‐grown crystals for investigating the optical quality, including transmission spectrum, scattering centers. Through comparison, it is found that the nonuniform distribution of Ba²⁺ ions causes remarkable difference in optical quality between prismatic and pyramidal sectors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Vertical Bridgman growth and optical properties of doped Bi12SiO20 crystals

The core-free BSO crystals with high optical quality, doped with NiO, Sb₂O₃, V₂O₅, Nb₂O₅, Ta₂O₅, and P₂O₅, have been grown by the vertical Bridgman (VB) method for the first time. The “interface” segregation coefficients of the above-mentioned dopants in BSO with values of 0.014, 0.162, 0.704, 0.039, 0.077, and 0.976, respectively, have been approximately evaluated according to the diffusive solute transport regime with the assumption of negligible natural convection in the melt. The transmission spectra of various doped BSO crystals have been measured in the range from 300 to 700 nm. A blue shift of the transmission edge in Ni-, Sb-, and P-doped BSO and a red shift in Nb- and V-doped BSO have been found as compared to undoped BSO. The modification in the absorption amplitude implies that the photorefractive performances of BSO crystals may be improved through doping.     

Synthesis,growth and characterization of single crystals of pure and thiourea doped L‐glutamic acid hydrochloride

L(+)Glutamic acid hydrochloride [HOOC (CH₂)₂CH(NH₂) COOH·HCl], a monoamino dicarboxylic acid salt of L‐Glutamic acid was synthesized and the synthesis was confirmed by FTIR analysis. Solubility of the material in water was determined. Pure and Thiourea doped L‐Glutamic acid hydrochloride crystals were grown by low temperature solution growth using solvent evaporation technique. XRD, UV‐Vis‐NIR analyses were carried out for both pure and thiourea doped crystals. The crystals were qualitatively analyzed by EDAX analysis and the presence of thiourea was confirmed. The cell parameters of L‐Glutamic acid hydrochloride have been determined as a = 5.151 Å, b = 11.79 Å, c = 13.35 Å by X‐ray diffraction analysis and it crystallizes in orthorhombic space group P2₁2₁2₁. UV‐Vis‐NIR spectra analysis showed good optical transmission in the entire visible region for both pure and doped crystals. Micro hardness of both pure and doped crystals has been determined using Vickers micro hardness tester. The SHG efficiencies of both pure and doped crystals were determined using Kurtz powder test and pure L‐Glutamic acid hydrochloride crystal was found to possess better efficiency than thiourea doped L‐Glutamic acid hydrochloride crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of L‐alanine doped KDP crystals

Potassium Dihydrogen Phosphate (KDP) is an excellent inorganic nonlinear optical (NLO) material with different device applications. Most of amino acids possess NLO property; therefore, it is of interest to dope them in KDP crystals. In the present study, amino acid L‐alanine doped KDP crystals were grown by slow aqueous solvent evaporation technique. The doping of L‐alanine was confirmed by the paper chromatography, the CHN analysis and the FT‐IR spectroscopy. The powder XRD was carried out to assess the single phase nature of the samples. The effect of doping on thermal stability of the crystals was studied by TGA and the kinetic and thermodynamic parameters of dehydration were evaluated. As the amount of doping increased the thermal stability of crystals decreased. However, the second harmonic generation (SHG) efficiency and the UV‐Vis spectroscopy studies indicated that as the L‐alanine doping increased the SHG efficiency and optical transmission percentage increased. The dielectric behavior of the samples has been studied. The variation of dielectric constant, dielectric loss (tanδ), a.c.resistivity and a.c.conductivity with frequency of applied field in the range from 100 Hz to 100 kHz was studied. The dielectric constant and dielectric loss decreased with increase the value of frequency of applied field. The dielectric constant and the dielectric loss values of L‐alanine doped KDP crystals were lower than the pure KDP crystals. The results are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of Struvite‐K crystals

Struvite‐K is the natural potassium equivalent to Struvite. Struvite‐K crystals were grown by single diffusion gel growth technique in silica hydro gel medium. Struvite‐K crystals with different morphologies having transparent to translucent diaphaneity were grown with different growth parameters. The phenomenon of Liesegang rings was also observed with some particular growth parameters. The crystals were characterized by powder XRD, FT‐IR, TGA and dielectric study. The powder XRD results of Struvite‐K confirmed the orthorhombic crystal structure. The FT‐IR spectrum proved the presence of water of hydration, metal – oxygen bond and P – O bond. The TGA, DSC and DTA were carried out simultaneously. It was found that crystals started dehydrating and decomposing from 75 °C and finally at 600 °C temperature it became 64.14% of the original weight and remained almost constant up to the end of analysis. From the thermo‐gravimetry, the numbers of the water molecules associated with the crystal were calculated and found to be 5. The kinetic and thermodynamic parameters of dehydration / decomposition process were calculated. The variation of dielectric constant with frequency of applied field was studied in the range from 400 Hz to 100 kHz, which exhibited the decreasing nature of the dielectric constant as frequency increased. The dielectric study showed that a.c. conductivity increased and consequently the a.c. resistivity decreased with the increase in frequency. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nitrogen‐doped zirconia single crystals

The aim of this work is the preparation of nitrogen‐doped single crystals of cation‐stabilized zirconia. Thin plates of these crystals were nitrided in a graphite heated resistance furnace with nitrogen as reaction gas. Several dwell times and reaction temperatures were tested and their effect on the amount of incorporated nitrogen is investigated. During nitridation at high temperatures a rock salt‐type ‘ZrN’ layer grows on the surface, leading to the destruction of the crystal. In contrast to the fluorite‐type bulk material, which can be described as a fast anion conductor, the surface layer shows electronic conductivity. For possible applications of the bulk material (solid electrolyte) the formation of the surface layer must be avoided. Therefore, the interface between surface epilayer and bulk material was investigated in detail by electron microscopy methods. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent‐thermal method

Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 °C and 800 °C using 8 MPa of N₂ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN₃ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30–0.67. The growth behavior differed according to the flux ratio. The quality of the bulk GaN single crystals was improved by increasing the flux ratio. The bulk GaN single crystals formed by spontaneous nucleation were deposited on the BN crucible wall and bottom during the first step of synthesis. The wurtzite structure of the GaN grown single crystal was confirmed by x‐ray diffration. The chemical composition was analyzed by electron probe microanalysis. The quality and optical properties of the GaN single crystal were examined by Raman spectroscopy and photoluminesence analysis. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of TGS and DTGS single crystals doped with Pt(II), Pt(IV) and L‐alanine

The single crystals of triglycine sulfate doped with bivalent and tetravalent Pt‐ions and with L‐alanine (LADTGS/Pt(II) and LATGS/Pt(IV)) were grown in the ferroelectric phase from low temperature solutions. Using stick seeds the full‐shaped crystals with many growth pyramids have been prepared. The growth rate along the axis c of the doped crystals is much higher than in an undoped one. Morphology, domain structure and P‐E hysteresis loops have been investigated. The effect of the dopant on the growth velocity is explained on the basis of catalytic action of supposed platinum complexes. The first series of the pyroelectric detectors have been prepared from these materials and their fundamental parameters are presented. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of 4‐(2‐hydroxyphenylamino)‐pent‐3‐en‐2‐one single crystals

4‐(2‐hydroxyphenylamino)‐pent‐3‐en‐2‐one (HPAP) was synthesized and single crystals were grown by the solution growth technique using methanol as a solvent. The crystals having orthorhombic symmetry were characterized by single crystal XRD, FTIR spectroscopy, NMR spectroscopy, TGA, DSC and dielectric studies. Very less variation in the value of dielectric constant is found for different frequencies of applied field. The crystals were exhibiting positive photoconductivity and poor NLO responses. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)