溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件

采用旋涂法用浓度分别为0.05,0.10和0.25 mol·L^-1的氧化锌前躯体溶液制备了氧化锌薄膜,并且制备了基于氧化锌多层膜的顶栅极晶体管器件,其中以利用光刻工艺刻蚀的氧化铟锡为源漏电极。通过原子力显微镜(AFM)和X-射线衍射(XRD)分别表征了薄膜的形貌以及结晶情况,并且讨论了前躯体的浓度顺序对氧化锌多层膜的影响。按照浓度从大到小的顺序依次旋涂前躯体溶液制备的氧化锌薄膜表现出了较高的载流子迁移率(7.1×10^-3 cm²·V^-1·s^-1),而按照浓度从小到大的顺序依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率为5.2×10^-3 cm²·V^-1·s^-1。文中通过对两种多层薄膜的形貌和结晶性能的分析表明影响顶栅极薄膜晶体管性能的主要因素是薄膜的粗糙度。平整的薄膜有利于形成较好的半导体层/绝缘层接触界面,从而有利于提高器件的载流子迁移率。     

有机半导体薄膜空间电荷分布对晶体管性能影响的研究进展

有机场效应晶体管(OFETs)是下一代柔性电子产业的基础元件,具有可弯曲、透明、低成本、可溶液加工等优良特性,并逐渐开始应用于生物传感器、柔性显示等领域。 然而,OFETs仍存在如工作电流小、跨导小、开关比低、空气稳定性差等问题,限制了其进一步的发展。 OFETs器件的性能主要受到导电沟道中电荷和电流分布的影响,若能通过外加手段,调控沟道中的电荷和电流分布,可能获得具有更高性能或新机理的器件。 本文结合课题组内的工作,对国内外该领域的最新进展进行综述和展望。     

n-型有机半导体插入层提高p-型并五苯薄膜晶体管性能

在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2 nm厚的N,N-bis（2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl） -1,4,5,8-naphthalenetetracarboxylic diimide（NTCDI^-C8F）和N,N’-dioctyl-3,4,9,10-perylenedicarboximide （PTCDI^-C8）层后,器件的阈值电压由-19.4 V显著降低到-1.8和-8.7 V、迁移率提高了约2倍、电流开关比保持在10⁵~10⁶。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。     

n-型有机半导体插入层提高p-型并五苯薄膜晶体管性能(英文)

在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2nm厚的N,N-bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl)-1,4,5,8-naphthalenetetracarboxylicdiimide(NTCDI-C8F)和N,N′-dioctyl-3,4,9,10-perylenedicarboximide(PTCDI-C8)层后,器件的阈值电压由-19.4V显著降低到-1.8和-8.7V、迁移率提高了约2倍、电流开关比保持在105~106。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。     

Fine-tuning the molecular energy levels by incorporating thiophene units onto the π-backbone of core-expanded naphthalene diimides

A series of core-expanded naphthalene diimides (NDI-DTYM) and thiophene-based derivatives (1a-c) were designed and synthesized to investigate the relationship between molecular structures and the highest occupied molecular orbital (HOMO) energy levels but has little impact on the lowest unoccupied molecular orbital (LUMO) energy levels. The results demonstrated that increasing the number of thiophene units can gradually elevate the HOMO energy levels but had little impact on the LUMO energy levels. The n-channel organic field-effect transistors (OFETs) based on 1b and 1c have demonstrated that these almost unchanged LUMO energy levels are proper to transport electrons.     

Influence of SAM Quality on the Organic Semiconductor Thin Film Gas Sensors

Gas sensors based on organic semiconductors receive tremendous attentions owing to their advantages on high selectivity and room temperature operation. However, until now, most organic semiconductor based sensors still suffered from problems, such as low sensitivity, slow response/recovery speed and poor stability. In addition, a clear correlation between the sensing performance and the film property is still absent. Herein, we report the investigation on sensing performance of a series of organic films with various morphologies. By simply adjusting the quality of self-assembled monolayer(SAM) on the silicon wafer surface, we obtain organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) films with varied morphologies and different charge transport abilities. The film with a small grain size and a continuous morphology presents the highest sensing performance to NO₂, with a sensitivity up to 730%/ppm(ppm=parts per million, vo-lume ratio). We thus reveal that the high sensitivity of the organic film is evident related with the charge transport ability and initial conductivity of the films, as well as the morphologies of both modification layer and the active films.     

有机半导体图案化成膜中的马兰戈尼与咖啡环效应协同作用

有机场效应晶体管在柔性传感和显示驱动应用中展示出极大的潜力,但在大面积制备高性能有机薄膜及有机场效应晶体管方面仍面临大的挑战。本文介绍了一种利用等离子处理和马兰戈尼-咖啡环效应协同作用来图案化生长有机半导体薄膜的方法。经过对等离子体处理时间、混合溶剂的比例及溶液浓度等生长条件优化,在5 cm×5 cm的基片上得到了覆盖性较为完整的2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)薄膜阵列。基于此薄膜构筑了底栅顶接触晶体管阵列,器件的平均迁移率达到7.9 cm~2·V~(-1)·s~(-1),阈值电压均小于-2 V,开关电流比大于10~4。本工作对未来大面积制备高性能有机半导体薄膜及晶体管具有一定的借鉴意义。     

酞菁锂薄膜的光电流极性研究

利用旋转涂膜法和真空镀膜法制备了以酞菁锂薄膜为工作层的有机光电器件, 结构为氧化铟锡/聚二氧乙基噻吩: 聚对苯乙烯磺酸/酞菁锂/聚偏氟乙稀/铝(ITO/PEDOT: PSS/LiPc/PVDF/Al). 在可见光和近红外脉冲激光照射下, 研究了器件的光电流极性. 在532 nm脉冲激光照射下, 器件的外电路光电流方向从ITO流向铝; 但在1064 nm脉冲激光照射下, 其外电路光电流极性发生反向, 即从铝流向ITO. 酞菁锂薄膜的吸收光谱和X射线衍射谱图显示, 其对可见和近红外光有非常广的吸收, 且为x晶型. 酞菁锂自由基的双极性特性可随入射光波长的变化而改变.     

Molecular design of n-type organic semiconductors for high-performance thin film transistors

This digest aims to provide organic chemists with an overview of recent progress on n-type organic semiconductors for application in organic thin film transistors (OTFTs) with an emphasis on molecular design. Herein, we survey n-type organic semiconductors with field effect mobility of 1 cm²/Vs or higher in OTFTs after a brief introduction to the structure and operation of OTFTs and discussion of two key factors (frontier molecular orbitals and molecular packing) of organic semiconductors. On the basis of this survey, we finally reach conclusions on the current status of n-type organic semiconductors for OTFTs and provide an outlook for molecular design.     

Recent Progresses on the High Performance Organic Electrochemical Transistors

Organic electrochemical transistor(OECT) with bulk current modulation capability based on the ion penetration into the organic semiconducting channel exhibits unique features, including high transconductance, low voltage and large capacitance. The high current at a low voltage, together with the compatibility with aqueous environment, makes OECT particularly suitable for bioelectronic applications, such as biological interfacing, printed logic circuitry and neuromorphic devices. However, the operation mechanism and structure-performance relationship of OECT are rather complicated and remain unclear to date. One of the critical issues is the ion penetration and transportation process. This review focuses on the research progresses of how to improve the OECT performance specifically through materials design, interfacing and morphology modulation. Different strategies of promoting the ion doping process are compared and discussed in order to optimize the device performance so that a deep understanding of the OECT operation principle could be gained.     

Electron transport in solution-grown TIPS-pentacene single crystals: Effects of gate dielectrics and polar impurities

The n-channel behavior has been occasionally reported in the organic field-effect transistors (OFETs) that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene), a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis (benzocyclobutene) (BCB) dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TIPS-pentacene single crystals on five polymer gate dielectrics including polystyrene (PS), poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP), poly(vinyl alcohol) (PVA) and poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)). In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA (40 nm) and a bilayer dielectric of PMMA on P(VDF-TrFE-CFE), while does not on PVP and thin PVA (2 nm). The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups (in PVP and PVA) and reduced injection barrier by Na⁺ ions (as impurity in PVA). The highest electron mobility of 0.48 cm² V^-1 s^-1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.     

TiO2薄膜的Ag改性及光催化活性

 用光化学沉积法对纳米TiO2薄膜进行了Ag改性,用漫反射紫外-可见光谱、扫描电子显微镜和X射线光电子能谱分析了Ag-TiO2薄膜的光谱特征、表面形貌和表面组成. 以苯酚为模拟污染物,在不同波长光源及有氧和无氧条件下考察了Ag-TiO2薄膜的光催化活性. 结果表明,当银沉积量大于 0.0150 mg/cm2时, Ag-TiO2薄膜对紫外光的吸收发生了明显的蓝移,同时在346 nm附近出现了小的吸收峰且该峰随着银沉积量的增加逐渐向长波方向移动. 沉积在TiO2薄膜表面的银颗粒大小不均匀,主要以单质银的形式存在,也生成了部分Ag2O; 相对于TiO2薄膜, Ag-TiO2薄膜表面吸附氧的含量明显增大. Ag-TiO2薄膜的光吸收特性对其催化活性影响较大. 在低压汞灯及有氧参与的条件下,银沉积量为0.0523 mg/cm2的Ag-TiO2薄膜的催化活性最高, 其反应速率常数是TiO2薄膜的1.16倍. Ag+更易沉积在较大n值的Ag簇上,其颗粒大小不可能完全均匀. Ag-TiO2薄膜的光吸收特性、 Ag簇的大小以及Ag对O2的吸附作用是决定Ag-TiO2薄膜催化活性的主要因素.     

AFM,ellipsometry, XPS and TEM on ultra-thin oxide/polymer nanocomposite layers in organic thin film transistors

Here we report on the fabrication and characterization of ultra-thin nanocomposite layers used as gate dielectric in low-voltage and high-performance flexible organic thin film transistors (oTFTs). Reactive sputtered zirconia layers were deposited with low thermal exposure of the substrate and the resulting porous oxide films with high leakage currents were spin-coated with an additional layer of poly-α-methylstyrene (PαMS). After this treatment a strong improvement of the oTFT performance could be observed; leakage currents could be eliminated almost completely. In ellipsometric studies a higher refractive index of the ZrO₂/PαMS layers compared to the “as sputtered” zirconia films could be detected without a significant enhancement of the film thickness. Atomic force microscopy (AFM) measurements of the surface topography clearly showed a surface smoothing after the PαMS coating. Further studies with X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) also indicated that the polymer definitely did not form an extra layer. The polymer chains rather (self-)assemble in the nano-scaled interspaces of the porous oxide film giving an oxide–polymer “nanocomposite” with a high oxide filling grade resulting in high dielectric constants larger than 15. The dielectric strength of more than 1 MV cm⁻¹ is in good accordance with the polymer-filled interspaces.     

Enhancing performance of nonvolatile transistor memories via electron‐accepting composition in triphenylamine‐based random copolymers

With the rapid advances in organic memory, organic field‐effect transistor (OFET) memory has been recognition of the value over the past few years. Although the functional polymer with the Donor‐Acceptor (D‐A) structure has been widely investigated, little research has been carried out to clarify the relationships among D‐A structure of the polymer, capability of charge‐transfer, and memory performance. Here, we report the nonvolatile memory characteristics of pentacene‐based OFET memory using random copolyimides, poly[4,4′‐diaminotriphenylamine‐hexafluoroisopropylidenediphthalimide‐co‐4‐(N,N‐bis(p‐aminophenyl)amino)‐4′‐nitroazobenzene‐hexafluoroisopropylidenediphthalimide) (PI(TPA‐6FDA‐DACx)), with feeding ratios of DAC to TPA set as x (where x = 0,10, 30,50,70,100). The OFET memory performance based on the molar ratio of DAC to TPA equal to 30:70 represents the best results with the proper charge mobility, on/off current ratio, and memory window. Intriguingly, the memory performance can be enhanced by introducing more D‐A monomer in polymer electrets, yet the concomitant inferior growth of pentacene decreases the charge mobility, attributed to the intrinsically destructive arrangement of polymer backbone. Our conclusion points out the importance of polymer arrangement and capability of charge‐transfer to the OFET performance and memory characteristics. The comparable results can also be applied for advanced OFET memory devices. © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2019 , 57, 1113–1121     

铁酸镧纳米晶薄膜制备及其在MOS场效应晶体管气敏元件上的应用

纳米晶固体材料是由粒径小于100nm的微晶颗粒聚集而成的块状或薄膜人工固体,它具有特殊性能。本文采用sol-gel法制备了LaFeO_3纳米晶薄膜,并与集成电路平面工艺相结合,首次研制出了用纳米晶薄膜作为栅控制极的MOS场效应晶体管乙醇敏感元件。     

TiO2薄膜光电极能带结构和催化活性的初探

以阳极氧化法制得的TiO₂薄膜光电极为工作电极,铂环为对电极,饱和甘汞电极为参比电极,组成光电催化降解苯酚体系.运用电化学阻抗图谱(EIS),测得光电催化过程中TiO₂薄膜光电极的空间电荷层电容,计算出半导体能带结构参数——空间电荷层宽度W.结果证明:当空间电荷层宽度W随阳极偏压增加而增大时,TiO₂薄膜电极光催化活性提高;当其等于薄膜厚度时,光催化活性最好,此时出现最佳偏压值;继续增加偏压,活性反而有所下降.     

Improved Electrochemical Performance of Mg-doped ZnO Thin Film as Anode Material for Lithium Ion Batteries

Zn1-xMgxO （x = 0, 0.18） thin films were fabricated on the copper substrates by radiofrequency magnetron sputtering using the high pure argon as a sputtering gas. The Zn1-xMgxO films were characterized by X-ray powder diffraction （XRD）, scanning electron microscope （SEM） and galvanostatic tests. The electrochemical test showed an improved electrochemical performance of Zn0.82EMg0.18O thin film as an anode material for lithium ion batteries.     

ITO/TiO2表面电沉积CdS纳米粒子及其薄膜的光电性能

采用阴极恒电位沉积方法, 在TiO2表面沉积制备出CdS纳米粒子. XRD和SEM测试结果表明, CdS粒子的结构以六方晶相为主, 粒径分布均匀, 表面形貌呈菜花状. 通过调节沉积电位和沉积时间等因素在一定程度上可以控制CdS纳米粒子的生长. 随着沉积电位变负, CdS粒子的粒径逐渐减小. 沉积时间越短, 粒子粒径越小. 紫外-可见吸收光谱测试结果表明, 不同条件下制备出来的CdS粒子表现出一定的量子尺寸效应. 此外, 沉积条件也会影响ITO/TiO2/CdS复合半导体薄膜的光电性能.     

氮化铝薄膜的组成分析

Al N是一种无机非铁性压电材料 ,具有宽的带隙、高的电阻率、高的抗击穿电压、高的声传播速率和低的传输损耗 ,在微电子器件中有着广泛的应用前景 [1] .由于 Al N薄膜的声速在整个无机非铁性材料中最高 ,因而成为 GHz级声表面波器件的首选材料 [2 ] .要实现 Al N薄膜的表面声波器件应用 ,不但结构重要 [1] ,组成也很重要 [3] ,因为薄膜的组成对其性质影响很大 .Al N压电薄膜要求整个膜层的 Al/N比一致 .富 Al会使薄膜介电性能变差 ,富 N会使薄膜结构致密度变差 .因而对其组成研究是非常重要的 .Penza等 [3] 采用X射线光电子能谱 ( X…     

不同结构的氧化钛纳米金复合薄膜的光伏特性

具有表面等离子体共振效应的金属和氧化物复合纳米结构被应用在染料敏化太阳能电池（DSSC）中以提高电池的光电转换效率,金属纳米粒子和氧化物薄膜的复合结构对于等离子体共振器件在电池上的效果有巨大的影响. 我们研究了不同氧化钛薄膜和纳米金复合体系（纳米金分别修饰在氧化钛薄膜的表面和下表面）的光电转换效果,其中当纳米金修饰在氧化钛薄膜表面时薄膜的紫外可见吸收增加最大. 然而,经过染料敏化之后,该体系的光电转换效率比未修饰的薄膜有所降低,而纳米金修饰在氧化钛薄膜下表面时,光电转换效率比未修饰时提高了37%,同时入射单色光子-电子转化效率（IPCE）也有相应提高. 为了进一步研究纳米金在复合薄膜中的作用,我们引入了TiO₂-Au-TiO₂的三明治体系,该体系的光电转换效率比未修饰的参比氧化钛薄膜仍有所提高. 上述研究结果表明等离子体共振器件的结构设计对于染料敏化太阳能电池的改善具有重要意义. 同时,我们对于纳米金的等离子体共振效应做了离散偶极子近似（Dipole Discrete Approximation）模拟计算,其结果支持了实验数据. 该研究对于未来太阳能电池中表面等离子体共振器件的设计具有一定指导意义.