受主掺杂BaPbO3陶瓷的缺陷结构

采用高温平衡电导法测定高温平衡电导率随氧分压(10^－12～10⁵ Pa)的变化曲线, 阐明了受主掺杂BaPbO₃的缺陷结构, 解释了材料的导电机理. 高氧分压下, Pb离子空位缺陷占主导, 电荷补偿缺陷为空穴; 随着氧分压的下降, 材料由本征缺陷占主导向杂质缺陷占主导转变, 受主杂质成为主导缺陷, 电荷补偿缺陷为空穴; 在低氧分压下, 电荷补偿缺陷由空穴转变为氧离子空位. 受主掺杂浓度的下降, 导致高温电导率下降, 并引起本征缺陷占主导向非本征缺陷占主导的转变点向低氧分压方向移动, 同时低氧分压区域的电荷补偿缺陷由空穴转变为氧离子空位的转变点也向更低的氧分压方向移动.     

La0.8Sr0.2Ga0.8Mg0.2O3与La0.8Sr0.2Ga0.8Mg0.15Co0.05O3电导的对比

采用固相合成法制备了La0.8Sr0.2Ga0.8Mg0.2O3(LSGM8282)和La0.8Sr0.2Ga0.8Mg0.15Co0.05O3 (LSGMC5), 利用四电极交流阻抗法和Hebb-Wagner 极化法对比研究了两种材料的总电导率和电子电导率. 实验结果表明, LSGM8282 的总电导率与氧分压无明显依赖关系, 而LSGMC5 的总电导率在高氧分压区随氧分压降低而增加,在中等氧分压区域基本保持不变. 在973-1173 K的温度范围内, LSGM8282的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和1/4.在1073-1173 K的温度范围内, LSGMC5的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和约为1/8, 表明LSGMC5的空穴产生机制可能与LSGM8282不同. LSGM8282 的氧离子电导率与氧分压无关, 而LSGMC5 的氧离子电导率在高氧分压区随氧分压的减小而增加.     

BaCe_(0.8)Zr_(0.1)La_(0.1)O_(3-α)陶瓷的制备和电性能研究

以高温固相反应法制备了BaCe0.8Zr0.1La0.1O3-α陶瓷,用粉末X-射线衍射(XRD)和扫描电镜(SEM)对其晶体结构和断面形貌进行了表征。以陶瓷材料为固体电解质、多孔性铂为电极,用交流阻抗谱技术测定了材料在500～900℃下不同气体气氛中的电导率;用气体浓差电池方法测定了材料在干燥空气和湿润空气中的离子迁移数;研究了材料的离子导电特性。结果表明,该陶瓷材料为单一钙钛矿型BaCeO3斜方晶结构。在500～900℃下,干燥和湿润的氧气、空气和氮气中,材料的电导率随着温度升高和氧分压增大而增大。在干燥的空气中,材料的氧离子迁移数为0.06～0.17,表现为氧离子与电子空穴的混合导电性,其中,电子空穴导电为主导。在湿润的空气中,材料的质子迁移数为0.52～0.01,氧离子迁移数为0.14～0.27,表现为质子、氧离子和电子空穴的混合导电性,其中,在500～550℃下,质子导电为主导;高于550℃,电子空穴导电为主导。     

La0.8Sr0.2MnO3／YSZ高温电极交流阻抗研究

用交流阻抗方法研究了Ｌａ０．８Ｓｒ０．２ＭｎＯ３电极上进行的氧化电化学还原反应。实验表明反应速度控制步骤随反应温度，氧分压及过电位发生显著变化，近平衡下反应的ｒｄｓ为氧的解离吸附过程。强阳极极化下，电解质表面产生大量电子空穴；强阴极极化下，ＬＳＭ电极表面形成大量氧空位，二者的结果均使界面电导增加，电化学反应区扩展。     

离子掺杂氧化锌光催化纳米功能材料的制备及其应用

氧化锌是一种氧化还原电位高、激子结合能大（~60 meV）、物理和化学稳定性较好、廉价且无毒的半导体光催化剂。本文综述了掺杂氧化锌光催化剂的掺杂离子类型、制备方法、光催化效果及其作用机理。掺杂氧化锌的离子类型主要包括非金属离子单掺杂、金属离子（包括过渡金属离子和稀土金属离子）单掺杂和双离子共掺杂。离子掺杂后可在氧化锌晶格中引入更多的氧空穴或缺陷,为光致氧化反应提供更多的活性位点;或者引入杂质能级,扩大光吸收范围,增强可见光吸收能力。同时,掺杂的离子也可作为电子捕获中心,阻止光生电子-空穴对的复合,从而提高氧化锌光催化剂的性能。此外,文中还对掺杂氧化锌光催化剂在有机污染物降解、抗菌和光催化制氢等方面的应用进行了系统概述,并对其发展趋势作了展望。     

第一性原理和热力学计算预测a-Al_2O_3中缺陷的稳定性

基于第一性原理中的密度泛函理论(DFT)和热力学计算方法,利用VASP软件包和GULP程序,计算了a-Al_2O_3晶体的能带结构,并考虑振动熵对晶体中本征点缺陷的形成能的贡献,预测了不同温度和氧分压条件下a-Al_2O_3晶体中点缺陷的稳定性.缺陷热力学跃迁能级的计算表明,Al_i是浅施主能级,V_(Al)(除2-/3-之外)都是浅受主能级,这些浅热力学跃迁能级在价态的转换上比较容易.通过分析振动熵随温度变化情况,考虑振动熵对缺陷形成能的贡献是必要的,它使铝填隙和氧填隙的缺陷形成能增大,氧空位和铝空位的缺陷形成能减小(尤其在高温条件下).本文讨论了以费米(Fermi)能级、温度和氧分压为函数变化的最稳定点缺陷三维分布图,以便更清晰、直观地掌握晶体中稳定点缺陷随Fermi能级、温度和氧分压变化的分布关系.     

源于铋玻璃的富氧空位BiOCl光催化材料的原位合成及性能

氧空位对光催化材料的可见光吸收范围与电子-空穴分离效率都具有重要影响,铋玻璃内含有丰富的氧空位缺陷.采用盐酸腐蚀铋玻璃原位合成BiOCl光催化材料,研究了玻璃网络外体对氧空位浓度的影响规律,并利用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)以及电子顺磁共振(EPR)对合成的BiOCl材料的结...     

Ba0.9La0.1Ce0.7Zr0.2Nd0.1O3-α陶瓷的化学稳定性和离子导电性

用高温固相反应法制备了Ba0.9La0.1Ce0.7Zr0.2Nd0.1O3-α陶瓷。粉末X-射线衍射(XRD)结果表明,该材料为单一钙钛矿型BaCeO3斜方晶结构,在高温下、CO2或水蒸气气氛中具有较高的稳定性。在500～900℃温度范围内,分别用交流阻抗谱技术和气体浓差电池方法研究了材料在不同气体气氛中的离子导电特性,并与Ba0.9Ca0.1Ce0.9Nd0.1O3-α材料的导电特性进行了比较。结果表明,在500～900℃温度范围内,干燥和湿润的氢气、氮气、空气和氧气气氛中,材料的电导率均随着温度升高和氧分压增加而增加,且材料在湿润气氛中的电导率稍高于相应的干燥气氛中的电导率(氢气气氛中则相反)。在湿润氢气中,材料的质子迁移数为1,是一个纯的质子导体;在干燥空气中,材料的氧离子迁移数为0.087～0.155,是一个氧离子与电子空穴的混合导体;在湿润空气中,材料的质子迁移数为0.001～0.004,氧离子迁移数为0.160～0.198,是一个质子、氧离子和电子空穴的混合导体。材料在干燥和湿润空气中的氧离子电导率均高于相同条件下Ba0.9Ca0.1Ce0.9Nd0.1O3-α材料的氧离子电导率。     

BaCe0.9Y0.1O3-α固体电解质的离子导电性

用交流复阴抗谱法测定了混合离子(质子+氧离子)导电性固体电解质BaCe0.9Y0.1O3-α在600～1000℃下不同气氛(干燥空气、湿润空气及湿润氢气)中的电导率;通过测定总电导率(离子电导率+电子电导率)随气氛中氧分压po2变化,求得离子电导率和离子迁移数;用氢浓差电池方法测得氢气中的质子迁移数。结果表明,BaCe0.9Y0.1O3-α固体电解质在氧分压<10Pa的气氛(如氢气)中几乎为纯离子导体,而在氧分压为10～10^5Pa的气氛(如空气)中为离子和电子空穴混合导体;样品在各气氛中的离子电导率均高于10^-2S·cm^-1。     

La1-xSrxYO3-α陶瓷的合成及电性能研究

本文采用高温固相法合成了La1-xSrxYO3-α(x=0.00,0.05,0.10,0.15)系列陶瓷样品,用XRD、SEM对样品进行了表征,并用交流阻抗谱、氢泵、氢浓差电池、氧浓差电池等系统地研究了该系列样品的电性能.结果表明,该系列陶瓷样品均为钙钛矿型单斜晶相结构:样品的氢浓差电池电动势的实测值和理论值吻合得很好,表明样品在氢气气氛中为纯离子导体;氢泵测试结果证实了样品在氢气气氛中基本上是质子导体;氧分压与电导率的关系表明样品在高氧分压气氛中是离子(质子+氧离子)和空穴的混合导体.在低氧分压气氛中是离子(质子+氧离子)导体;氧浓差电池测试结果表明样品在干燥的氧化性气氛中是氧离子和空穴的混合导体.     

BaPbO_3－Nd_2O_3系陶瓷导电性研究

研究了ＢａＰｂＯ３－Ｎｄ２Ｏ３系陶瓷的导电性，研究表明，此系统陶瓷的导电载流子是氧缺位中存在的施主电子；添加适量的Ｎｄ２Ｏ３，可以改善ＢａＰｂＯ３陶瓷的导电性和ＰＴＣ特性     

溶剂热合成可调控氧空位的Bi2MoO6纳米晶及其光催化氧化制喹啉和抗生素降解

近年来,半导体光催化在环境净化和有机合成领域的研究引起了广泛的重视.其中,在有机合成领域中,光催化技术已经应用在醇类、环己烷以及芳香族化合物的选择性氧化研究.而另一类具有特殊结构的有机物——N-杂环芳烃,在药物化学和材料科学中具有重要意义.而传统用于合成N-杂化芳烃的脱氢催化氧化反应通常需要高温高压的苛刻环境,传统方法通常还需要使用贵金属催化剂,这也增加了N-杂化芳烃的合成成本;另外,如果合成是均相催化过程,则催化剂难以实现回收利用.因此,开发室温常压条件下的非贵金属多相光催化技术具有巨大的应用前景.本文以能够被可见光驱动的钼酸铋半导体为催化剂,利用氧缺陷策略来提升钼酸铋的光催化氧化性能.不同于传统氧缺陷制备方法(氢气还原热处理、离子掺杂等),本文采用一种低成本的乙二醛辅助溶剂热的方法合成具有可调控的含氧空位Bi₂MoO₆催化剂(OVBMO).通过X射线粉末衍射(XRD)、扫描电镜、透射电镜、紫外可见漫反射吸收光谱、氮气物理吸附脱附、X射线光电子能谱(XPS)、电子自旋共振光谱、光致发光光谱及电化学测试等技术对制备的OVBMO材料进行了物理化学性质及能带研究.XPS,XRD,Raman和FT-IR结果表明,氧空位存在于[Bi₂O₂]²⁺和MoO₆八面体的层间.紫外可见漫反射结果表明,随着氧空位的引入,Bi₂MoO₆的光吸收范围扩大,带隙变窄.结合莫特肖特基和VBXPS分析获得OVBMO的能带位置,发现氧空位的存在不仅会导致禁带中出现缺陷带能级,还会导致价带顶位置上移,促进光生空穴的迁移.PL和电化学结果表明,氧空位的存在使得载流子浓度、载流子的分离能力与界面电荷迁移能力都有较大提升,这是因为氧空位引入的缺陷能级可以浅势捕获电子,抑制光催化剂中的电子与空穴的复合,改变化学反应的速率.同时,氧空位有助于捕获分子氧,分子氧与捕获的光生电子发生反应,产生更多的超氧自由基(·O₂)和空穴(h⁺),从而极大地提升光催化剂的氧化性能.因此,OVBMO在1,2,3,4-四氢喹啉脱氢氧化产生喹啉及系列抗生素(环丙沙星、四环素、盐酸土霉素)的降解反应中,表现出较好的光催化氧化性能.结合多种表征分析,本文还进一步阐明了OVBMO催化剂将1,2,3,4-四氢喹啉脱氢氧化为喹啉的自由基参与的多相催化反应机理.     

A concerted migration mechanism of mixed oxide ion and electron conduction in reduced ceria studied by first-principles density functional theory

Ceria based oxides are regarded as key oxide materials for energy and environmental applications, such as solid oxide fuel cells, oxygen permeation membranes, fuel cell electrodes, oxygen storage, or heterogeneous catalysis. This great versatility in applications is rendered possible by the fact that rare earth-doped ceria is a pure oxygen ion conductor while undoped ceria, CeO(2-δ), is a mixed oxygen ion-electron conductor. To get deeper insight into the mixed conduction mechanism of oxygen ions and electrons from atomistic and electronic level viewpoints we have applied first-principles density functional theory (DFT + U method). The calculation results show that oxygen vacancies strongly attract localized electrons, forming associates between them. The migration energy of an oxygen vacancy in such an associate is substantially lowered compared to the unassociated case due to the simultaneous positional rearrangement of localized electrons during the ionic jump process. Accordingly, we propose a concerted migration mechanism of oxygen vacancies and localized electrons in reduced ceria; this mechanism results in an increased diffusivity of oxygen vacancies supported by localized electrons compared with that in pure oxide ion conductors.     

富表面氧空位Fe2O3/ZnO催化剂在光催化合成氨中的应用

光催化合成氨是一种绿色节能的合成氨技术,设计制造丰富的表面氧空位和异质结构是促进氮分子活化和抑制电子-空穴复合的重要方法。我们以乙二醇作为还原剂,采用溶剂热法制备合成了Fe2O3/ZnO光催化剂,利用X射线衍射(XRD)、透射电镜(TEM)、电子顺磁共振(EPR)、紫外-可见漫反射(UV-Vis DRS)、荧光光谱(PL)及光电流(PC)对Fe2O3/ZnO催化剂进行表征,并考察了Fe2O3/ZnO催化剂在常温、常压下的光催化合成氨的性能。4%Fe2O3/ZnO催化剂在无牺牲剂下用于光催化合成氨,有较好的光催化效率和稳定性,其合成氨效率达到2059μmol·L-1·g-1·h-1。其高催化效率归因于:可见光区域吸收的提高、氮分子在表面氧空位与Fe3+活性中心上的协同活化及光生电子与空穴的高分离效率。     

Identification and investigation of impurities in undoped Hg1−xCdxTe

The effect of impurities on electrical properties has been the most sought information for the well-known infrared sensing material mercury-cadmium telluride. The relationship between the excess holes (p-type) or excess electrons (n-type) of undoped mercury-cadmium tellurideHg_1?xCd_xTe(0.23 ? x ? 0.4)and the residual impurities in the crystals were investigated. The impurities in the undoped material were determined using emission spectrometry, atomic absorption, and spark sources mass spectrometry.Trace analysis indicates that impurities such as Cu and Ag consistently appear inp-type samples. Although these elements are not frequently observed inn-type substance, occasionally they are found in the material in a minute amount. Impurities such as Si, Cr, Pb, Li, Rb, Co, and Sn have been detected in bothp-type andn-type materials. The possible correlation of these impurities with thep-type orn-type behavior of the undoped material is discussed.     

Effect of nitrogen ion irradiation treatment to the enhancement of ZnO photocatalytic performance

To overcome the drawbacks of fast charge recombination and the limited visible-light absorption of semiconductor photocatalysts, N ion irradiation is used to enhance photocatalytic performance of ZnO nanowires. Compared with as-grown ZnO nanowires, the photocatalytic performance of ZnO under dose of 5 × 10¹⁵ cm⁻² was efficiently improved because of the bandgap energy decreasing and the introduction of oxygen vacancies defects. On one hand, the reduced bandgap energy improves the easy transfer process of electrons and holes, thus improving the charge separation efficiency, and visible-light absorption. On the other hand, N ion irradiation increases oxygen vacancy defects and hinders the recombination of photo-excited electrons and holes. This study has certificated that ion irradiation is an efficient way and created a new insight on the enhancement of photocatalytic activity.     

Defective TiO2 hollow nanospheres as photo-electrocatalysts for photo-assisted Li-O2 batteries

The large overpotential for conventional Li-O₂ batteries is an enormous challenge, which impedes their practical application. Here, we prepare a defective TiO₂ (Ov-TiO₂) hollow nanosphere as photo-electrocatalyst for photo-assisted Li-O₂ batteries to reduce the overpotential. Under illumination, the oxygen vacancies as a charge separation center contribute to the separation of electrons and holes. The generated electrons could promote reducing O₂ to Li₂O₂ during oxygen reduction reaction (ORR) process, while the generated holes are beneficial to Li₂O₂ decomposition during oxygen evolution reaction (OER) process. Additionally, the proper concentration of oxygen vacancies will decrease the recombination rate between electrons and holes. The photo-assisted Li-O₂ batteries with Ov-TiO₂-650 exhibit advanced performances, such as the low overpotential (0.70 V), the fine rate capability, and the considerable reversibility accompanied with the formation/decomposition of Li₂O₂. We expect that these results could open a new mind to design of highly efficient photo-electrocatalysts for photo-assisted Li-O₂ battery.     

Transition levels of defect centers in ZnO by hybrid functionals and localized basis set approach

A hybrid density functional study based on a periodic approach with localized atomic orbital basis functions has been performed in order to compute the optical and thermodynamic transition levels between different charge states of defect impurities in bulk ZnO. The theoretical approach presented allows the accurate computation of transition levels starting from single particle Kohn-Sham eigenvalues. The results are compared to previous theoretical findings and with available experimental data for a variety of defects ranging from oxygen vacancies, zinc interstitials, and hydrogen and nitrogen impurities. We find that H and Zn impurities give rise to shallow levels; the oxygen vacancy is stable only in the neutral V(O) and doubly charged V(O) (2+) variants, while N-dopants act as deep acceptor levels.     

Inhibition of Electron-Hole Recombination in Substitutionally Doped Colloidal Semiconductor Crystallites

The subtitutional doping of 120-Å- sized TiO₂ Particles with Fe( III )ions has a profound effect on the charge carrier recombination time in this colloidal semiconductor. In undoped particles, the mean lifetime of an electronhole pair is ca. 30 ± 15 ns. Doping with 0.5% Fe( III ) drastically augments the charge-carrier lifetime which is extended to minutes or hours. The slow character of the recombination dynamics in Fe( III )-doped colloids was confirmed by laser photolysis using the characteristic optical of electrons in TiO₂ to monitor the time course of the reaction. EPR studies showed the Fe( III ) ions to enter the host lattice on Ti( IV ) sites, charge compensation taking place through the formation of oxygen vacancies. Valence-band holes produced under band-gap excitation react with these centers it the bulk forming Fe( IV ), the conduction band electrons being trapped by Ti( IV ) at the particle surface. Presumably, the spatial separation of the trapped electron and hole sites inhibits their recombination.