Magnetoresistance in Co/AlOx/Co tunnel junction arrays

Lateral arrays of Co/AlO_x/Co junctions with dimensions down to 60 nm and inter-junction separations ∼60–100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe ∼10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.     

Tunneling magnetothermopower in magnetic tunnel junction nanopillars

We study tunneling magnetothermopower (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by an electric heater line. Thermopower voltages up to a few tens of μV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence the thermal gradient. The thermopower signal varies by up to 10 μV upon reversal of the relative magnetic configuration of the two CoFeB layers from parallel to antiparallel. This signal change corresponds to a large spin-dependent Seebeck coefficient of the order of 100 μV/K and a large TMTP change of the tunnel junction of up to 90%.     

Spin current through a tunnel junction

We derive an expression for the spin current through a tunnel barrier in terms of many-body Green’s functions. The spin current has two possible contributions. One is associated with angular momentum transfer due to spin-polarized charge current crossing the junction. If there are magnetic moments on both sides of the tunnel junction, due to spin accumulation or ferromagnetic ordering, then there is a second contribution related to the exchange coupling between the moments.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Magnetoresistance in silicon based ferrite magnetic tunnel junction

We report magnetoresistance for silicon based magnetic tunnel junction. We used cobalt ferrite & cobalt nickel ferrite as free layer and pinned layer. The magnetoresistance measured at room temperature through silicon by fabricating FM/Si/FM magnetic tunnel junction. Magnetoresistance shows a loop type behavior with 3.7%. We have successfully demonstrated spin tunneling through silicon with ferrite junction that opens the door for potential candidate for spintronics devices. The spin-filtering effect for this double spin-filter junction is also discussed.     

Quantum modulation effect in a graphene-based magnetic tunnel junction

The electronic (quantum) transport in a NG/F_B/FG tunnel junction (where NG, F_B and FG are a normal graphene layer, a ferromagnetic barrier connected to a gate and a ferromagnetic graphene layer, respectively) is investigated. The motions of the electrons in the graphene layers are taken to be governed by the Dirac Equation. Parallel (P) and antiparallel alignment (AP) of the magnetizations in the barrier and in the ferromagnetic graphene are considered. Our work focuses on the oscillation of the electrical conductance (Gq), of the spin conductance (Gs) and of the tunneling magneto resistance (TMR) of this magnetic tunnel junction. We find that, the quantum modulation due to the effect of the exchange field in F_B will be seen in the plots the conductance and of the TMR as functions of the thickness of ferromagnetic barrier (L). The period of two multiplied sinusoidal terms of the modulation are seen to be controlled by varying the gate potential and the exchange field of the F_B layer. The phenomenon, a quantum beating, is built up with two oscillating spin conductance components which have different periods of oscillation related to the splitting of Dirac's energies in the F_B region. The amplitudes of oscillations of Gq, Gs and TMR are not seen to decrease as the thickness increases. The decaying behaviors seen in the conventional transport through an insulator do not appear.     

Interfacial density of states in magnetic tunnel junctions

Large zero-bias resistance anomalies as well as a collapse of magnetoresistance were observed in Co/Al2O3/Co magnetic tunnel junctions with thin Cr interfacial layers. The tunnel magnetoresistance decays exponentially with nominal Cr interlayer thickness with a length scale of approximately 1 A more than twice as fast as for Cu interlayers. The strong suppression of magnetoresistance, as well as the zero-bias anomalies, can be understood by considering a strong spin-dependent modification of the density of states at Co/Cr interfaces. The role of the interfacial density of states is shown by the use of specially engineered structures. Similar effects are predicted and observed in junctions with Ru interfacial layers.     

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy(PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy(PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE–TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn–Ga, L10-ordered(Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.     

第一性原理研究Co2MnSi和Co2MnGe半金属与磁性的稳定性

基于广义梯度近似密度泛函和全势能线性缀加平面波方法,对Co2MnSi和Co2MnGe在晶格常数发生变化的情况下进行电子结构和磁矩的自旋极化计算,得到了它们的自旋态密度分布以及总磁矩和各原子磁矩。计算结果的分析表明：（1）Co2MnSi 和Co2MnGe具有半金属性质;（2）晶格常数的改变分别为-5%~ 4%和-6%~1%时,Co2MnSi 和 Co2MnGe仍保持稳定的半金属质性;（3）Co2MnSi 和Co2MnGe的总磁矩为5.00µB/formula。总磁矩主要来源于Mn和Co的原子磁矩,Si和Ge的原子磁矩对总磁矩的贡献极小而且为负值。（4）Co2MnSi 和 Co2MnGe的晶格常数变化分别为-6% ~ 6%和-7%~ 4%时,虽然各原子磁矩都发生了变化,但是它们总磁矩稳定于5.00µB/formula.     

第一性原理研究Co2MnSi和Co2MnGe半金属与磁性的稳定性

基于广义梯度近似密度泛函和全势能线性缀加平面波方法,对Co2MnSi和Co2MnGe在晶格常数发生变化的情况下进行电子结构和磁矩的自旋极化计算,得到了它们的自旋态密度分布以及总磁矩和各原子磁矩。计算结果的分析表明：（1）Co2MnSi 和Co2MnGe具有半金属性质;（2）晶格常数的改变分别为-5%~ 4%和-6%~1%时,Co2MnSi 和 Co2MnGe仍保持稳定的半金属质性;（3）Co2MnSi 和Co2MnGe的总磁矩为5.00µB/formula。总磁矩主要来源于Mn和Co的原子磁矩,Si和Ge的原子磁矩对总磁矩的贡献极小而且为负值。（4）Co2MnSi 和 Co2MnGe的晶格常数变化分别为-6% ~ 6%和-7%~ 4%时,虽然各原子磁矩都发生了变化,但是它们总磁矩稳定于5.00µB/formula.     

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co_2MnSi/graphene/n-Ge junction

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium(Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height(SBH) occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.     

Perpendicular magnetic anisotropy of Pd/Co2MnSi/NiFe2O4/Pd multilayers on F-mica substrates

Pd/Co₂MnSi(CMS)/NiFe₂O₄(NFO)/Pd multilayers were fabricated on F-mica substrate by magnetron sputtering.The best PMA performance of the multilayer structure Pd(3 nm)/CMS(5 nm)/NFO(0.8 nm)/Pd(3 nm)was obtained by adjusting the thickness of the CMS and NFO layers.F-mica substrate has a flatter surface than glass and Si/SiO₂ substrate.The magnetic anisotropy energy density(K_eff)of the sample deposited on F-mica substrates is 0.6711 Merg/cm³(1 erg=10^-7 J),which is about 30%higher than that of the multilayer films deposited on glass(0.475 Merg/cm³)and Si/SiO₂(0.511 Merg/cm³)substrates,and the R_Hall and H_C are also significantly increased.In this study,the NFO layer prepared by sputtering in the high purity Ar environment was exposed to the high purity O₂ atmosphere for 5 min,which can effectively eliminate the oxygen loss and oxygen vacancy in NFO,ensuring enough Co-O orbital hybridization at the interface of CMS/NFO,and thus effectively improve the sample PMA.     

Field-dependent evolution of magnetic states in Co ring arrays

We present a systematic study of field-dependent evolution in the magnetization reversal process of elongated Co ring arrays using in-situ field magnetic force microscopy. We observed that, the rings typically undergo a uniform→onion→vortex→reverse onion→reverse uniform spin-state transition as the field is swept along the major axis of the rings. However, the switching field distribution in the arrays generally leads to each transition occupying a wide range of fields, which results in the observation of coexistence of different magnetization states at lower field. The magnetization reversal sequence has also been verified by micromagnetic simulations, which show good agreement with our experimental data.     

Reproducibility of GABA measurements using 2D J-resolved magnetic resonance spectroscopy

We determined the reproducibility of GABA (gamma-aminobutyric acid) measurements using 2D J-resolved magnetic resonance spectroscopy (MRS) on a clinical 1.5-T MR imaging scanner. Two-dimensional J-resolved spectra were acquired in vitro across five GABA concentrations using a volume head coil and a 5-in. surface coil. Additional spectra using a sixth GABA phantom with a very low concentration and from a healthy volunteer were recorded in the 5-in. surface coil only. In each case, the 3.01-ppm GABA resonance was quantified; for comparison, the peak integrals of choline (3.2 ppm) and creatine (3.03 ppm) were recorded. At a physiological concentration (1.2 mM), in vitro GABA measurement was significantly more reproducible in the surface coil than in the volume coil (P=.005), with coefficients of variation (CVs) being less than 16% with the surface coil and up to 68% with the volume head coil. At the smallest concentration of in vivo GABA reported using other spectroscopy techniques (0.8 mM) and detected only using the surface coil, the CV for GABA was 23% and was less than 10% for choline and creatine, which compare favorably with results from published studies. In vivo, the CV for GABA measurement was 26%, suggesting that 2D J-resolved MRS would be suitable for detecting physiological changes in GABA, similar to those reported using other methods.     

Spin field emission and state switching in a magnetic tunnel junction

The phenomena of spin tunneling and spin torque transfer between magnetic layers of a tunnel spin-valve setup under weak and strong field emissions of spin-polarized electrons are considered. Bifurcational features of changes in the macrospin states under the impact of a tunnel current are discussed for varying directions of the spin-polarization vector.     

A simple model for maser action obtained through a magnetic tunnel junction placed inside a resonant cavity

Magnetic tunnel junctions are currently being used in magnetoresistive reading heads, magnetic field sensors and MRAMs, due to its giant magnetoresistance effect whose roots are linked to strong spin-dependent scattering mechanisms. The existence of spin-polarized currents in such devices posed us the question over the possibility to generate coherent microwave radiation in a spin inverted population medium, maintained through a spin-polarized current. In this paper we investigate the possibility of obtaining a maser effect considering a magnetic tunnel junction placed inside a resonant cavity. We put forward a simple model based on phenomenological rate equations, being the spin-polarized currents determined by the physics of the magnetic tunnel junction.     

Synthesis and magnetic states of cobalt in three-layer Co/Ge/Co films

The magnetic properties of three-layer Co-Ge magnetic films have been studied experimentally as a function of technological conditions of their deposition. It has been found that the films deposited at a high deposition rate have a granular structure, and the films obtained at a low deposition rate have an X-ray amorphous structure. Electron microscopy and nuclear magnetic resonance studies have demonstrated that, at the same cobalt layer thickness, the semiconductor granule sizes depend on the average semiconductor layer thickness and correlate with the formation of different cobalt phases (amorphous, cubic, and hexagonal). The thermomagnetic properties of the films have been investigated.