Domain dynamics in (210)-oriented single-crystal (Bi,Y,Lu,Pr)<Subscript>3</Subscript>(Fe,Ga)<Subscript>5</Subscript>O<Subscript>12</Subscript> films

Using high-speed photography, dynamic magnetic structures are studied in Bi-containing (210)-oriented single-crystal films of (Bi,Y,Lu,Pr)₃(Fe,Ga)₅O₁₂ grown through liquid-phase epitaxy from an overcooled solution in the melt on (Gd,Ga)₃(Mg,Zr,Ga)₅O₁₂ substrates. At various temperatures, the ranges of pulsed magnetic fields are determined in which unidirectional anisotropy of domain wall velocity and spatial distortions of moving domain walls are observed.     

Ferroelastic domain freezing and low-frequency elastic behaviour of [Formula: see text] (ALHS)

In this work elastic measurements on [Formula: see text] (ALHS) which were carried out in the low-frequency range between 1 and 50 Hz are presented. The temperature dependence of the inverse elastic compliance [Formula: see text] has been determined between 90 K and 420 K. Distinct anomalies have been found in the temperature dependence of [Formula: see text], which are connected to the motion of domain walls in the ferroelastic phase below [Formula: see text]. Around [Formula: see text] a (partial) ferroelastic `domain freezing' phenomenon has been observed. To the knowledge of the authors this is the first time that pure ferroelastic domain freezing has been reported. However, below [Formula: see text] the domain walls seem to retain a certain vibrational degree of freedom which could be responsible for an additional anomaly of the loss modulus which was observed. The elastic behaviour of a crystal of ALHS is dependent on the `history' of the given sample. During temperature cycling [Formula: see text] shows differences between the first run of heating and cooling and later runs. Finally, some basic insights concerning the domain wall motion were obtained; it was found that the domain wall mobility decreases by three orders of magnitude in the temperature region 170 - 230 K.     

Magnetization reversal in (0 0 1)Fe thin films studied by combining domain images and MOKE hysteresis loops

The magnetization reversal of epitaxial single-crystal Fe films has been studied by combining domain images and hysteresis loops. The reversal is quantitatively described by combining the coherent rotation model and the domain wall displacement model. The pinning energy exerted on the domain walls and the domain wall angle at the switching fields are obtained by fitting this model to experimental hysteresis loops. The field-dependent pinning energy and the domain wall angle in the reversal process, and the contributions of second-order magneto-optic effect to hysteresis loops, are revealed to be two important features of single-crystal Fe films.     

Transient domain wall displacement under spin-polarized current pulses

This paper investigates the non steady-state displacement of magnetic domain walls in a nanostrip submitted to a time-dependent spin-polarized current flowing along the nanostrip. First, numerical micromagnetic simulations show that a domain wall can move under application of a current pulse, and that the displacement resulting from a conversion of the domain wall structure is quantized. The numerical findings are subsequently explained in the framework of simplified analytic models, namely the 1D model and the point-core vortex model. We then introduce the concept of an angle linked to the magnetization of a general domain wall, and show that it allows understanding the transient phenomena quite generally. Simple analytic formulas are derived and compared to experiments. For this, charts are given for the key parameters of the domain wall mechanics, as obtained from numerical micromagnetic simulations. We finally discuss the limitations of this work, by looking at the influence of temperature elevation under current, presence of a non-adiabatic term, and of disorder.     

Disorientation angles and compatible walls for phase transition hexagonal to monoclinic phase

Orientation of compatible domain walls and magnitude of disorientation angle of a ferroelastic domain twin resulting from phase transition hexagonal to monoclinic phases is expressed in crystallographic unit-cell parameters of the low-symmetry phase. These two characteristics, the orientation of the compatible wall and the disorientation angle, depend on the spontaneous strain in two single-domain states R ₁, R ₂ from which the domain twin is formed. They have been determined for all classes of the compatible domain walls as a function of the strain-tensor components [A. Authier, International Tables for Crystallography, in Physical Properties of Crystals, Chapter 3.4, Vol. D, A. Authier, ed., Kluwer Academic Publishers, Dordrecht, 2003, pp. 449–505]. If relative changes of crystal lattice are small, then the second rank symmetrical strain tensor u can be calculated from the crystallographic unit-cell parameters before and after the deformation [J.L. Schlenker, G.V. Gibbs, and M.B. Boisen Jr, Strain-tensor components expressed in terms of lattice parameters, Acta. Cryst. A 34 (1978), pp. 52–54; L. Jian and C.M. Wayman, Domain boundary and domain switching in a ceramic rare-earth Orthoniobate LaNbO_{4 ,} J. Am. Ceram. Soc. 79 (1996), pp. 1642–1648]. An alternative approach expresses the disorientation angle and orientation of the compatible domain wall [J. P?ívratská, Disorientation angle expressed in terms of lattice parameters, Ferroelectrics 291 (2003), pp. 197–204] in terms of the crystallographic unit-cell parameters of the low-symmetry phase.     

Influence of ferroelectric domain walls on the Raman scattering process in lithium tantalate and niobate

We report changes in the Raman spectra at ferroelectric domain walls in near-stoichiometric LiNbO3 and stoichiometric LiTaO3. We find a decrease of intensity for the regular bulk Raman peaks along with increases of intensity in spectral regions that correspond to phonons, which propagate at an angle with respect to the incident light. In the backscattering geometry, such modes are not supported in the bulk crystal due to momentum conservation. We confirm that these changes are due to the domain wall itself and are independent of intrinsic defects or charging effects.     

Domain and wall structures in films with helical magnetization profile

We study soft magnetic bilayers having orthogonal, in-plane easy axes. The layers are thicker than the Bloch wall width linked to the anisotropy, so that a helical magnetization with a large angle exists across the sample thickness. The magnetic domains structure has been investigated at both sample surfaces, using magneto-optical microscopy. The domain structure is found to be similar to that of double films with biquadratic coupling. Two kinds of domain walls are identified, namely with a 90° and 180° rotation of the average magnetization. The detailed structure and energy of these walls are studied by micromagnetic calculations.     

Monte Carlo study of one-dimensional confined fluids with Gay-Berne intermolecular potential

The thermodynamic quantities of a one dimensional system of particles with Gay-Berne model potential confined between walls have been obtained by means of Monte Carlo computer simulations. For a number of temperatures, the systems were considered and their density profiles, order parameter, pressure, configurational temperature and average potential energy per particle are reported. The results show that by decreasing the temperature, the soft particles become more ordered and they align to the walls and also they don’t show any tendency to be near the walls at very low temperatures. We have also changed the structure of the walls by embedding soft ellipses in them, this change increases the total density near the wall whereas, increasing or decreasing the order parameter depend on the angle of embedded ellipses.     

Dynamics of domain walls in ultrathin magnetic films

The domain walls in ultrathin ferromagnetic films with uniaxial magnetic anisotropy are investigated theoretically. It is shown that taking account of the magnetodipole and magnetoelastic interactions leads to the appearance of an effective anisotropy with respect to the direction of the normal to the plane of the wall. The existence of a new type of domain walls—“corner” walls, at which the magnetization vector is rotated in the plane making a certain angle, which depends on the film parameters, with the plane of the domain wall and the static and dynamic properties of these walls are investigated. The dependence of the limiting velocity of the domain walls on the film thickness is found. Zh. éksp. Teor. Fiz. 112, 1476–1489 (October 1997)     

On one mechanism of magnetization reversal in crystals with combined anisotropy

The effect of a magnetic field on the stability of null domain walls is considered in terms of a variational model. The walls are localized near defects in a (001)-oriented plate. The critical fields at which the inhomogeneities exist are found, and their role in magnetization processes taking place in the crystals under study is considered.     

Orientation dependent size effects in thermal buckling and post-buckling of nanoplates with cubic anisotropy

In this work, a continuum model is presented for size and orientation dependent thermal buckling and post-buckling of anisotropic nanoplates considering surface and bulk residual stresses. The model with von-Karman nonlinear strains and material cubic anisotropy of single crystals contains two parameters that reflect the orientation effects. Using Ritz method, closed form solutions are given for buckling temperature and post-buckling deflections. Regarding self-instability states of nanoplates and their recovering at higher temperatures, an experiment is discussed based on low pressurized membranes to verify the predictions. For simply supported nanoplates, the size effects are lowest when they are aligned in [100] direction. When the edges get clamped, the orientation dependence is ignorable and the behavior becomes symmetric about [510] axis. The surface residual stress makes drastic increase in buckling temperature of thinner nanoplates for which a minimum thickness is pointed to stay far from material softening at higher temperatures. Deflection of [100]-oriented buckled nanoplates is higher than [110] ones but this reverses at higher temperatures. The results for long nanoplates show that the buckling mode numbers are changed by orientation which is verified by FEM.     

壁面材质和温度场对熔融硅润湿角的影响

本文建立了毛细模型, 采用微流动两相流水平集法计算了熔融态硅液与壁面的润湿角, 以人造金刚石作为壁面材料的计算结果与实验结果进行比较, 验证了该模型和计算方法的正确性. 在此基础上, 分别选用碳化硅、石墨和人造金刚石作为壁面材料, 探讨了不同壁面材料表面张力和壁面黏附力对润湿角的影响规律. 结果发现, 相同温度下的毛细力作用使得熔融硅液出现起伏上升现象; 润湿角均有不同程度的减小然后增大, 最终趋于稳定; 初始阶段, 由于气/熔融硅液表面张力与气/壁面表面张力之差变化较大, 液面起伏波动较大; 随后趋于稳定上升. 同时发现石墨作为壁面材料时, 以上变化更易趋于稳定. 该研究为熔体中生长晶体硅获得更稳定的生长环境提供了理论依据.     

Intrinsic coercive field in pseudobinary cubic intermetallic compounds. I: DyxY1−xAl2 and Dy1−δAl2

The thermal variation of the coercive field in pseudodobinary Laves phase compounds Dy_xY_1−xAl₂ (0.10 ⪯ x ⪯ 1.10) and Dy_1−δAl₂ (δ = 0.025 and 0.048) has been measured from 3.7 K up to the Curie temperatures. It turns out the coercive field has two contributions: one from the intrinsic pinning of narrow domain walls in the Peierls crystal potential wells of the anisotropy energy; this contribution dominates at low temperatures and decays exponentially with the narrow domain wall width. The other comes from the pinning of the domain walls by deflecs, being explained by the Kersten theory of critical domain wall bowing. The domain walls seem very narrow in these materials, the widths estimated from the coercive field being between two and three atomic spacings.     

Domain wall motion in nanowires

We investigated the motion of domain walls in ferromagnetic cylindrical nanowires by solving the Landau–Lifshitz–Gilbert equation numerically for a classical spin model in which energy contributions from exchange, crystalline anisotropy, dipole–dipole interactions, and a driving magnetic field are considered. Depending on the diameter, either transverse domain walls or vortex walls are found. A transverse domain wall is observed for diameters smaller than the exchange length of the given system. In this case, the system effectively behaves one dimensionally and the domain wall velocity agrees with the result of Slonczewski for one-dimensional walls. For larger diameters, a crossover to a vortex wall sets in which enhances the domain wall velocity drastically. For a vortex wall the domain wall velocity is described by the Walker formula.     

Domain wall resistance in perpendicular (Ga,Mn)As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.     

Altering the superconductor transition temperature by domain-wall arrangements in hybrid ferromagnet-superconductor structures

The [Co/Pt]n/Nb/[Co/Pt]n hybrids with perpendicular magnetic anisotropy reveal enhanced superconductivity with the presence, and the arrangements, of domain walls, where superconductivity persists. An in-plane field can manipulate the domain walls from labyrinth to stripe patterns and drive the hybrids from normal to superconducting. We observe anisotropic superconductivity in hybrids with stripe domains, along which enhanced superconductivity is realized.     

Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires

Single (Co/Pt)_{7} multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180 degrees domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of DeltaR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang [Phys. Rev. Lett. 79, 5110 (1997)10.1103/PhysRevLett.79.5110].     

Conduction of topologically protected charged ferroelectric domain walls

We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO(3) protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and Kelvin-probe force microscopy at low temperatures. In addition to previously observed Schottky-like rectification at low bias [Phys. Rev. Lett. 104, 217601 (2010)], conductance spectra reveal that negatively charged tail-to-tail walls exhibit enhanced conduction at high forward bias, while positively charged head-to-head walls exhibit suppressed conduction at high reverse bias. Our results pave the way for understanding the semiconducting properties of the domains and domain walls in small-gap ferroelectrics.     

Ferroelectric domain structure of the BiFeO3 film grown on different substrates

Domain structure of BiFeO₃ (BFO) films grown on different substrates, with a conductive La_0.7Sr_0.3MnO₃ underlayer, has been experimentally studied. Two oppositely orientated polarizations, along the long body diagonal to the perovskite unit cell of BFO, are detected in the BFO films on the (0 0 1)-oriented NdGaO₃. Electric pulses applied in the [0 0 1] direction produce a polarization switching, resulting in the domain structure characterized by the 109° domain walls. Contrary to the BFO films on NdGaO₃, the BFO films on SrTiO₃ (0 0 1) exhibit a much complex domain structure. Both 71° and 109° domain walls are possible with a uniform polarization component pointing to the bottom electrode.