Specific features of structural, dielectric, and optical properties of CdTiO3

The optical and dielectric properties and the structure of crystalline and ceramic perovskite CdTiO₃ modifications have been investigated. The multiplication of the unit cell along three perovskite axes is found. The new possible space groups of symmetry D _2h ¹⁸ and D _2h ²¹ are determined. It is elucidated how small radiation doses affect the structure and properties of crystalline and ceramic perovskite modifications. Analysis of the intensities of diffraction reflections demonstrate that the defect formation leads to an increase in the antiparallel displacements of Cd atoms in the unit cell.     

Role of Ge incorporation in the physical and dielectric properties of Se<Subscript>75</Subscript>Te<Subscript>25</Subscript> and Se<Subscript>85</Subscript>Te<Subscript>15</Subscript> glassy alloys

The effect of Ge additive on the physical and dielectric properties of Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has been investigated. It is inferred that on adding Ge, the physical properties i.e., average coordination number, average number of constraints and average heat of atomization increase but lone pair electrons, fraction of floppy modes, electronegativity, degree of crosslinking and deviation of stoichiometry (R) decrease. The effect of Ge doping on the dielectric properties of the bulk Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has also been studied in the temperature range 300–350 K for different frequencies (1 kHz–5 MHz). It is found that, with doping, the dielectric constant ε^′ and dielectric loss ε^″ increase with increase in temperature and decrease with increase in frequency. The role of the third element Ge, as an impurity in the two pure binary Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has been discussed in terms of the nature of covalent bonding and electronegativity difference between the elements used in making the aforesaid glassy systems.     

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y₂O₃ as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm²/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 °C in N₂ containing 5% H₂ ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 10⁴. It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y₂O₃ is observed in the range between 5.1 and 5.4 measured on various devices.     

Modification of the dielectric properties of copper-doped CdIn2S4 single crystal

The study of the dielectric properties of a CdIn₂S₄〈3 mol % Cu〉 single crystal in alternating-current (ac) electric fields with frequencies f = 5 × 10⁴?3.5 × 10⁷ Hz has revealed the origin of dielectric loss (relaxation loss that is changed by the through current loss at high frequencies). It has been found that CdIn₂S₄〈Cu〉 has permittivity increment Δ?′ = 123, relaxation frequency f _r = 2.3 × 10⁴ Hz, and relaxation time τ = 43 μs. The doping of CdIn₂S₄ single crystal with copper (3 mol %) is established to substantially increase the permittivity (?′), dielectric loss tangent (tanδ), and ac conductivity (σ_ac). In this case, the frequency dispersion of ?′ and tanδ increases and that of σ_ac decreases.     

FLAPW-GGA calculations of the influence of Mn, Fe, and Co impurities on the electronic and magnetic properties of layered oxychalcogenides LaCuSO and LaCuSeO

The electronic and magnetic properties of oxychalcogenides LaCuSO and LaCuSeO with a layered ZrCuSiAs-type structure doped with impurity atoms M = Mn, Fe, and Co have been predicted using the first-principles FLAPW-GGA method. It has been shown that a partial substitution of 3d ^{n < 9} metal atoms for copper atoms in the structure of the initial matrix leads to the transition of the oxychalcogenides (nonmagnetic semiconductors) to the state of a magnetic half-metal with 100% spin polarization of near-Fermi electrons. In this case, the magnetic and conducting properties of the LaCu_{1 ? x} M _x S(Se)O systems are determined by the states of the [Cu₂(S,Se)₂] blocks with magnetic impurities separated by nonmagnetic semiconducting [La₂O₂] blocks.     

Effects of yttrium substitution on structural and electrical properties of barium zirconate titanate ferroelectric ceramics

In the present study, structural, dielectric and ferroelectric properties of Ba_1?3x/2Y_x Zr_0.025Ti_0.975O₃ ferroelectric ceramics have been investigated. The compound was synthesized using solid state reaction technique. The effect of yttrium substitution on structural, dielectric and ferroelectric properties was studied using X-ray diffractometer, scanning electron microscopy (SEM), LCR meter and P–E loops. Phase analysis shows the formation of secondary phase YTi₂O₆ for Y ≥ 2.5 mol% substitution. The microstructural investigation shows that Y substitution significantly reduces the grain size. An increase in Y content up to 2.5 mol% increases the Curie temperature (T_c) initially but decreases subsequently. The maximum dielectric constant at T_c has been observed for 2 mol% Y substitution and with further increase in Y content the dielectric constant decreases considerably. The solubility limit is found to be 2.5 mol% of Y and after that some of the yttrium atoms enter B-sites and leading to the formation of the secondary phase. The P–E loop studies show that there is an increase in the coercive field with increasing Y content.     

Synthesis, magnetic and dielectric properties of Er-Ni doped Sr-hexaferrite nanomaterials for applications in High density recording media and microwave devices

A sol-gel combustion method has been successfully employed for the synthesis of Sr-hexaferrite nanomaterials doped with Er³⁺ and Ni²⁺ at strontium and iron sites, respectively. The X-ray diffraction analysis confirmed the single magnetoplumbite phase and the crystallite size was found to be in the range of 14-16 nm, suitable for obtaining signal-to-noise ratio in the high density recording media. The magnetic properties such as saturation magnetization (M_s), remanence (M_r) and coercivity (H_c) were calculated from hysteresis loops. M_s, M_r and H_c are observed to increase with the Er-Ni content. The dielectric constant (ε´) and dielectric loss (tan δ) is found to decrease with the increase in frequency and is explained on the basis of Maxwell-Wagner and Koops theory. The decrease in dielectric constant and dielectric loss but increase in saturation magnetization and remanence with Er-Ni content suggests that the materials are suitable for applications in microwave devices and high density recording media .     

Magnetic-field-induced phase transition in Tb0.95Bi0.05MnO3+δ multiferroic

The effect of a magnetic field on the dielectric properties of Tb_0.95Bi_0.05MnO_3+δ single crystals has been analyzed. It has been shown that the state of the crystal for temperatures of 5–440 K is inhomogeneous and restricted domains of polar and spin correlations are exhibited in it. A phase transition in which the inhomogeneous state of the crystal changes substantially has been observed at a temperature of T ? 180 and 225 K (in the absence and presence of a magnetic field, respectively). The high-temperature phase contains large dielectric domains with a high dielectric constant (ε ～ 10⁵) and thin conducting layers at the boundaries of these domains. The magnetic field significantly affects the state of both low-and high-temperature phases of the crystal, shifting the temperature of the phase transition between them, and induces an additional phase transition at T ? 441 K.     

XANES study of interatomic interactions in (CoFeZr)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (SiO<Subscript>2</Subscript>)<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript> nanocomposites

Analysis of the X-ray absorption near-edge structure of (Co₄₅Fe₄₅Zr₁₀)x(SiO₂)_1–x nanocomposites has shown the presence of interaction between atoms of the metallic and dielectric components in the nanocomposite. In this process, d-metal ions (Fe³⁺, Fe²⁺, Co²⁺) play the most active role. They interact with oxygen ions of the dielectric component and form not only Fe₂O₃ × CoO nanoferrites but also silicates of d metals.     

Structural phase transitions in Fe3+ -doped ferroelectric TlGaSe2 crystal

This paper presents the results of dielectric constant and Electron Paramagnetic Resonance (EPR) investigations of Fe³⁺-doped TlGaSe₂ single crystals in the temperature range of 15–300 K. The influence of Fe impurities on dielectric properties and phase transitions of TlGaSe₂ crystal has been studied. The results were considered in comparison with earlier observed results from pure TlGaSe₂ compounds. We observed the considerable decrease of the dielectric constant as well as the change of the shape of the temperature dependence of the dielectric constant in doped crystals. Some certain significant changes of EPR spectra, which are associated with a strong splitting and appearance of additional resonance lines, were observed at the temperatures below 110 K. Such transformations are considered as the result of non-equivalent displacements of different groups of Tl atoms during the structural phase transitions.     

Investigation of dielectric and electrical behavior of Mn doped YCrO3 nanoparticles synthesized by the sol gel method

In the present work Mn doped YCrO₃ nanoparticles are synthesized by the sol–gel method. Samples have been characterized by the X-ray diffraction (XRD), transmission electron microscopy (TEM) and UV–vis absorption spectroscopy. The optical band gap of Mn doped YCrO₃ nanoparticles increases with increase of doping concentration. The dc resistivity of the prepared samples decreases with increasing temperature. The variation of ac conductivity with frequency has been explained by the Correlated Barrier Hoping (CBH) conduction mechanism. Dielectric permittivity of the samples was studied and it follows the power law ε^/(f)∝Tⁿ, where the temperature exponent n is found to be frequency dependent. The dielectric properties of the samples have been discussed in terms of electric modulus vector. Both activation energies due to dc resistance and dielectric response have been measured for the different samples and it is observed that it increases with the Mn content.     

High-k Mg-doped ZST for microwave applications

The (Zr_0.8Sn_0.2)TiO₄ material (ZST), has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1260-1320 °C for 2 h. The effects of sintering parameters like sintering temperature (T_s) and MgO addition (0.2 wt.%) on structural and dielectric properties were investigated. Bulk density increases from 4900 to 5050 kg/m³ with the increase of sintering temperature. The effect of MgO addition is to lower the sintering temperature in order to obtain well sintered samples with high value of bulk density. The material exhibits a dielectric constant ?_r ∼ 37 and high values of the Q × f product, greater than 45,000, at microwave frequencies. The dielectric properties make the ZST material very attractive for microwave applications such as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc.     

Decrease of loss in dielectric properties of TbMnO3 by adding TiO2

Low-frequency (10²-10⁵ Hz) dielectric properties of TbMnO₃+xTiO₂ (x=0.33, 1, 3) ceramic composites, which were fabricated by conventional solid-state reaction, were investigated from 360 to 77 K. Very high dielectric constants and interesting temperature dependence of the dielectric properties were observed in the present composite ceramics. When compared to the high dielectric loss of the polycrystalline TbMnO₃, the loss of TbMnO₃+xTiO₂ (x=0.33, 1, 3) decreased with the increasing TiO₂. Especially for TbMnO₃+1TiO₂, the dielectric loss decreased remarkably, while the dielectric constant was still very high, which are more favorable for practical applications.     

Magnetic and dielectric study of Bi2CuO4

Magnetic and dielectric properties have been investigated for Bi₂CuO₄, which has the same chemical formula as that of the parent materials of cuprate superconductors R₂CuO₄ (R: rare earths). Magnetization measurements show the antiferromagnetic transition of the Cu²⁺ spins at ～42 K, as reported previously. Dielectric measurements for the frequencies of 1 kHz to 1 MHz show that the dielectric constants are 100–500 at room temperature. The dielectric dispersion reveals that the dielectric response lacks spatial coherence, a property which indicates the possible existence of phase separation as suggested for La₂CuO₄. The imaginary part of dielectric response gives the activation energy of 0.22 eV, suggesting that the dielectric response is governed by the electron hopping between the Cu ions.     

Study of (Bi2O3)(BaxMo1−xO3) polycrystalline ceramic as relaxor ferroelectric

Solid solutions of bismuth layered (Bi₂O₃)(Ba_xMo_1−xO₃) (0.2≤x≤0.8, x is in step of 0.2) ceramics were prepared by conventional solid-state reaction of the constitutive oxides at optimized temperatures with a view to study its electrical properties. Powder X-ray diffraction has been employed for physical characterization and an average grain size of ∼16 to 22 nm was obtained. XRD study reveals the single phase structure of the samples. Dielectric properties such as dielectric constant (ε′), dielectric loss (tanδ) and ac electrical conductivity (σ_ac) of the prepared ceramics sintered at various temperatures in the frequency range 10¹–10⁷ Hz have been studied. A strong dispersion observed in the dielectric properties shows the relaxor type behavior of the ceramic. The presence of maxima in the dielectric permittivity spectra indicates the ferroelectric behavior of the samples. Impedance plots (Cole–Cole plots) at different frequencies and temperatures were used to analyze the electric behavior. The value of grain resistance increases with the increase in Ba ion concentration. The conductivity mechanism shows a frequency dependence, which can be ascribed to the space charge mainly due to the oxygen vacancies. The relaxation observed for the M″ (ω) or Z″ (ω) curves is correlated to both localized and long range conduction. A single ‘master curve’ for the normalized plots of all the modulus isotherms observed for a given composition indicates that the conductivity relaxation is temperature independent.     

Frequency dependence of ionic conductivity and dielectric relaxation studies in Na3H(SO4)2 single crystal

Electrical impedance measurements of Na₃H(SO₄)₂ were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO₄ tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na⁺ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ω^s. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition.     

Depolarizing collision anisotropy and collision echo in ytterbium vapor

A photon echo induced exclusively by collisions of ytterbium atoms with buffer gas atoms has been observed at a 0 ? 1-type¹ S ₀(6s ²)-³ P ₁(6s6p) ¹⁷⁴Yb transition. The polarization properties of a collision echo and the buffer gas density dependence of its intensity agree with theoretical predictions of a model of depolarizing collisions that takes into account the dependence of a relaxation matrix on the velocity of active particles. Thus, direct experimental evidence of the relaxation anisotropy due to depolarizing collisions has been obtained.     

Effect of magnesium substitution on dielectric and magnetic properties of Ni-Zn ferrite

The dielectric and magnetic properties of Mg incorporated Ni-Zn spinel ferrites have been investigated. Ni_0.5−xZn_0.5Mg_xFe₂O₄ ferrites have been prepared by sol-gel auto-combustion technique. The as prepared ferrites were annealed at 673, 873 and 1073 K. The X-ray diffraction studies reveal the spinel structure of annealed ferrites. The TEM results are in agreement with XRD results. FTIR study has also been carried out to get insight into the structure of these ferrites. The dielectric measurements show that the dielectric constant (ε′), dielectric loss (tan δ) and conductivity (σ_ac) increase on incorporation of Mg in the Ni-Zn ferrite. ε′, tan δ and σ_ac also show dependence on temperature, frequency of external applied electric field and microstructure of the samples. The magnetic moment measurements reveal that the saturation magnetization (M_s) increases and coercivity (H_c) decreases with the increase in concentration of Mg²⁺ ions. M_s and H_c also show dependence on the annealing temperature.     

Finite size effect and influence of temperature on electrical properties of nanocrystalline Ni–Cd ferrites

Electrical conductivity and dielectric measurements have been investigated for four different average grain sizes ranging from 3 to 7 nm of nanocrystalline Ni_0.2Cd_0.3Fe_2.5−xAl_xO₄ (0.0 ⩽ x ⩽ 0.5) ferrites. The impedance spectroscopy technique has been used to study the effect of grain and grain boundary on the electrical properties of the Al doped Ni–Cd ferrites. The analysis of data shows only one semi-circle corresponding to the grain boundary volume suggesting that the conduction mechanism takes place predominantly through grain boundary volume in the studied samples. The variation of impedance properties with temperature and composition has been studied in the frequency range of 120 Hz–5 MHz between the temperatures 300–473 K. The hopping of electrons between Fe³⁺ and Fe²⁺ as well as hole hopping between Ni³⁺ and Ni²⁺ ions at octahedral sites are found to be responsible for conduction mechanism. The dielectric constant and loss tangent (tan δ) are found to decrease with increasing frequency, whereas they increase with increasing temperature. The dielectric constant shows an anomalous behavior at selected frequencies, while the temperature increases, which is expected due to the generation of more electrons and holes as the temperature increases. The behavior has been explained in the light of Rezlescu model.     

Structure, electric and dielectric studies of indium-substituted magnesium copper manganese ferrites

The structure, electric and dielectric properties of In-substituted Mg-Cu-Mn ferrites having the general formula of Mg_0.9Cu_0.1Mn_0.1In_xFe_1.9−xO₄ with 0.0≤x≤0.4 have been studied. X-ray diffraction (XRD) patterns of the samples indicated the formation of single-phase cubic spinel structure up to 0.2 and mixed phase (cubic and tetragonal phase) for samples x≥0.3. The relation of conductivity with temperature revealed a semiconductor to semimetal behavior as In⁺³ concentration increases. Variation in the universal exponent s with temperature indicates the presence of two hopping conduction mechanisms: the correlated barrier hopping (CHB) at low In⁺³ content x≤0.1 and small-polaron (SP) hopping at In⁺³ content x≥0.2. The variation in dielectric permittivity (ε′, ε″) with temperature at different frequencies shows a normal behavior for the studied compounds, while the variation in dielectric loss tangent with frequency at different temperatures shows abnormal behavior with more than relaxation peak. The conduction mechanism used in the present study has been discussed in the light of electron exchange between Fe³⁺ and Fe²⁺ ions and hole hopping between Mn²⁺ and Mn³⁺ ions at the octahedral B-sites.