Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles

Nano-crystalline indium oxide (In₂O₃) particles have been synthesized by sol–gel and hydro-thermal techniques. A simple hydro-alcoholic solution consisting indium nitrate hydrate and citric acid (in sol–gel method) and 1, 4-butandiol (in hydro-thermal method) have been utilized. The structural properties of indium oxide nano-powders annealed at 450 °C (for both methods) have been characterized by the X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and specific surface area (SSA) analysis. Structural analysis of the samples shows cubic phase in sol–gel and cubic-hexagonal phase mixture in hydro-thermally prepared particles. The nano-particles prepared by sol–gel method have nearly spherical shape, whereas hydro-thermally-made ones display wire- and needle-like shape in addition to the spherical shape. The obtained In₂O₃ nano-particles surface areas were 23.2 and 55.3 in sol–gel and hydro-thermal methods, respectively. The optical direct band gap of In₂O₃ nano-particles were determined to be 4.32 and 4.24 eV for sol–gel and hydro-thermal methods, respectively. These values exhibit 0.5 eV blue shift from that the bulk In₂O₃ (3.75 eV), which is related to the particle size reduction and approaching the quantum confinement limit of nano-particles.     

Low-temperature photoluminescence spectra of CdO–In2O3 thin films prepared by sol–gel

(CdO)_1?x–(InO_3/2)_x thin films were deposited on glass substrates by the sol–gel method. The precursor solutions for the mixed oxide films were obtained from the mixture of the precursor solutions for CdO and In₂O₃ prepared separately. The investigated In atomic concentrations in the solution, x, were 0.0, 0.16, 0.33, 0.50, 0.67, 0.84, and 1. X-ray diffraction measurements showed that the films were mainly constituted of CdO, In₂O₃, and CdIn₂O₄. CdO and In₂O₃ were obtained for x=0 and 1, respectively. For x=0.67, which is the stoichiometric composition of the CdIn₂O₄ compound, only this oxide was formed. CdO and CdIn₂O₄ crystals were obtained in the Cd-rich region, whereas In₂O₃ and CdIn₂O₄ crystals were formed in the In-rich region. The PL spectra at 15 K for CdO showed the presence of two main emission bands at energies close to 2.2 and 3.0 eV. A blue-shift of these bands took place for increasing In concentration, which is related to the increase in the band gap energy of the mixed system in going from CdO, with a band gap energy of 2.46 eV, to CdIn₂O₄, with 3.2 eV, to In₂O₃, with 3.6 eV.     

Sr and Ga substituted Ba2In2O5: Linking ionic conductivity and the potential energy surface

We study in detail the potential energy surface of Ga and Sr substituted Ba₂In₂O₅ by considering the changes in the relative energies of the local structures of Ba₂In₂O₅ when replacing 1 / 8th of the indium atoms with gallium or 1 / 8th of the barium atoms with strontium. The calculations are subsequently used to interpret the increase in ionic conductivity of cubic Ba₂In₂O₅ when strontium is substituted for barium and the decrease in ionic conductivity when gallium is substituted for indium. The effects of replacing 1 / 8th of the indium atoms with gallium or 1 / 8th of the barium atoms with strontium are significant and affect considerably the relative stability of the different low energy local structures present for Ba₂In₂O₅. While a higher density of low energy structures is observed for Ba_1.75Sr_0.25In₂O₅ than for Ba₂In₂O₅, the opposite occurs for Ba₂In_1.75Ga_0.25O₅. This observation supports our main hypothesis: a high density of low energy local structures is a prerequisite for high ionic conductivity.     

Annealing temperature dependent on structural,optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method

In the present work the influence of annealing temperature on the structural and optical properties of the In₂O₃ films deposited by electron beam evaporation technique in the presence of oxygen was studied. The deposited films were annealed from 350 to 550 °C in air. The chemical compositions of In₂O₃ films were carried out by X-ray photoelectron spectroscopy (XPS). The film structure and surface morphologies were investigated as a function of annealing temperature by X-ray diffraction (XRD) and atomic force microscopy (AFM). The structural studies by XRD reveal that films exhibit preferential orientation along (2 2 2) plane. The refractive index (n), packing density and porosity (%) of films were arrived from transmittance spectral data obtained in the range 250–1000 nm by UV–vis-spectrometer. The optical band gap of In₂O₃ film was observed and found to be varying from 3.67 to 3.85 eV with the annealing temperature.     

Effect of Fe3+ doping on structural,optical and electrical properties δ-Bi2O3 thin films

Fe³⁺ doped δ-Bi₂O₃ thin films were prepared by sol–gel method on quartz glass substrate at room temperature and annealed at 800 °C. The thin films were then characterized for structural, surface morphological, optical and electrical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption measurements and d.c. two-probe, respectively. The XRD analyses revealed the formation δ-Bi₂O₃ followed by a mixture of Bi₂₅FeO₄₀ and Bi₂Fe₄O₉. SEM images showed reduction in grain sizes after doping and the optical studies showed a direct band gap which reduced from 2.39 eV for pure δ-Bi₂O₃ to 1.9 eV for 10% Fe³⁺ doped δ-Bi₂O₃ thin film. The electrical conductivity measurement showed the films are semiconductors.     

Fabrication of Fe-doped TiO2 nanoparticles and investigation of photocatalytic decolorization of reactive red 198 under visible light irradiation

In this research, Fe-doped TiO₂ nanoparticles with various Fe concentrations (0. 0.1, 1, 5 and 10 wt%) were prepared by a sol–gel method. Then, nanoparticles were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray analysis (EDX), BET surface area, photoluminescence (PL) spectroscopy and UV–vis diffuse reflectance spectroscopy (DRS). The photocatalytic activity of the nano-particles was evaluated through degradation of reactive red 198 (RR 198) under UV and visible light irradiations. XRD results revealed that all samples contained only anatase phase. DRS showed that the Fe doping in the titania induced a significant red shift of the absorption edge and then the band gap energy decreased from 3 to 2.1 eV. Photocatalytic results indicated that TiO₂ had a highest photocatalytic decolorization of the RR 198 under UV irradiation whereas photocatalytic decolorization of the RR 198 under visible irradiation increased in the presence of Fe-doped TiO₂ nanoparticles. Among the samples, Fe-1 wt% doped TiO₂ nanoparticles showed the highest photocatalytic decolorization of RR198 under visible light irradiation.     

Electronic core levels of hydroxyls at the surface of chromia related to their XPS O 1s signature: A DFT + U study

The Cr 2p and O 1s binding energy (BE) levels have been calculated by first principles methods for different models of hydroxylated (0001)-Cr₂O₃ surfaces. Several surface terminations have been considered. The calculations allow us to reproduce the O 1s shifts between O in oxide and OH groups. It is found that two main effects account for the OH binding energy shifts. On the one hand, the increased covalency of the O–H bond with respect to the Cr–O bond, lowers the electronic O (1s and 2p) energy, and in consequence the BE of the core levels (O 1s) are higher. On the other hand, the lower the OH coordination number, the higher the valence and core levels energy, and the lower the BE. Consequently, mono-coordinated hydroxyls have a binding energy near that of O^2? in the oxide (ΔBE_OH–O = ? 0.2–0.0 eV). Two-fold coordinated hydroxyls have a slightly higher BE (ΔBE_OH–O = + 0.3 eV). Three-fold coordinated OH groups have a higher binding energy (ΔBE_OH–O = + 0.6?0.7 eV), corresponding to that experimentally measured for OH groups. Finally, water adsorbed above OH groups exhibits a still higher BE (ΔBE_HOH–O = + 0.9–1.0 eV). The ΔBE are slightly under-estimated under the initial state approximation, and overestimated under the final state (Z + 1) approximation.     

Synthesis,characterization and magnetic properties of lightly doped La2−xSrxCuO4 (x = 0.04) nanoparticles

Lightly doped La_2−xSr_xCuO₄ (x = 0.04) nanoparticles with different particle sizes have been successfully prepared by a sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared transmission (IR) spectra and superconducting quantum interference device (SQUID) magnetometer. All samples are single phase and have an orthorhombic unit cell. As the particle size reduces, it is found that the IR band at around 685 cm⁻¹ corresponding to the in-plane Cu–O asymmetrical stretching mode shifts to higher frequency and the magnetization exhibits a large enhancement at low temperature. The magnetic susceptibility of all samples follows a modulated Curie law between ∼20 K and ∼100 K and the Curie constant displays a strong dependence on the particle size. It is suggested that as the particle size decreases surface effects should play an important role in the magnetic properties of the nanoparticles.     

The comparison of Ag–As33S67 films prepared by thermal evaporation (TE), spin-coating (SC) and a pulsed laser deposition (PLD)

Chalcogenide thin films could be prepared by many experimental methods resulting in some differences in structure and physicochemical properties of prepared films. In this work, the As₃₃S₆₇ amorphous films were prepared by three different preparation techniques: vacuum thermal evaporation (TE), pulsed laser deposition (PLD) and spin-coating (SC). A silver film was deposited on the top of the As₃₃S₆₇ films and photodoped.The X-ray diffraction analysis showed significant differences in arrangement between bulk glass and thin films and also among films themselves. The Raman spectroscopy showed that the Raman spectra of PLD film and bulk glass are almost similar. On the other hand, TE films contain higher amount of homopolar bonds As–As and S–S. The value of refractive index of As₃₃S₆₇ bulk glass was 2.31. All prepared films have lower index of refraction contrary to bulk glass, i.e. TE∼2.27, PLD∼2.20 and SC∼1.90. The increase of refractive index with silver concentration is shown either. The optical bandgap of undoped As–S prepared films was different: TE∼2.42 eV, PLD∼2.45 eV and SC∼2.54 eV.     

Determination of the critical indium composition corresponding to the metal–insulator transition in InxGa1−xN (0.06 ⩽ x ⩽ 0.135) layers

The low-temperature conductivity of In_xGa_1−xN alloys (0.06 ⩽ x ⩽ 0.135) is analyzed as a function of indium composition (x). Although our In_xGa_1−xN alloys were on the metallic side of the metal–insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the In_xGa_1−xN alloys. In addition, all of the In_xGa_1−xN alloys took place below the Ioeffe–Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal–insulator transition, the critical indium composition is obtained as x_c = 0.0543 for In_xGa_1−xN alloys.     

Magnetic properties of BaFe11.6–2xCoxTixO19 particles produced by sol–gel and spray-drying

Ba-ferrite powders of composition BaFe_11.6−2xCo_xTi_xO₁₉ (with x varying from 0 to 1.1) were prepared by the sol–gel and spray-drying techniques. Green powders showed an amorphous structure. They were heat-treated from 850°C to 1000°C to promote crystallisation and to study the dependence of the magnetic properties on the annealing temperature. Unlike the evaporation-dried powders, the spray-dried samples showed a highly homogeneous structure, which consisted of spherical particles with sizes ranging from 0.1 to ∼0.3 μm. As for the magnetic properties, the saturation magnetisation and remanence remained practically constant up to x=0.8 for all heating temperatures, whereas the coercivity fell uniformly as x increased from ∼5.5 to ∼0.1 kOe.     

Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In₂O₃ lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25–36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In₂O₃ sample. The highest remanence magnetization moment (6.624 × 10⁻⁴ emu/g) is reached in the sample with x = 0.03.     

Improved short-circuit photocurrent densities in dye-sensitized solar cells based on ordered arrays of titania nanotubule electrodes

We report on the synthesis of highly ordered arrays of titania nanotubules and their applications in enhanced photoelectrochemical cells. Ordered arrays of titania nanotubules of ∼120 nm external diameter, ∼100 nm internal diameter, and ∼5 μm length were fabricated on transparent conductive oxide (TCO) glass substrates by sol–gel processes using in-house prepared anodic alumina templates. After thermal bonding and template removal, the resultant nanotubule structures were applied in dye-sensitized solar cells (DSCs). Overall photoconversion efficiency of nearly 4.8% was achieved with Ru-bipyridine dye, N719, and iodolyte liquid electrolyte. This remarkable performance, for electrodes only ∼5 μm thick, is attributed to an unexpectedly high short-circuit photocurrent density of 16 mA/cm² for masked cells and up to 17 mA/cm² for unmasked cells. The enhanced short-circuit photocurrent (J_sc) is attributed to the high surface area (roughness factor ca. 1207) of the nanotubules and thus improved dye adsorption to the electrodes. The improved J_sc is also attributed to the parallel and vertical orientation of the nanostructures and thus to a well-defined electron diffusion path.     

Synthesis of CoFe2O4 nanoparticles embedded in a silica matrix by the citrate precursor technique

A metals–citrate–silica gel was prepared from metallic salts, citric acid and tetraethylorthosilicate by sol–gel method (citrate precursor technique) and it was further used to prepare magnetic nanocomposites. The gel was dried at 100 °C and then calcined at temperatures between 600 and 1000 °C to obtain powder samples. The nanocomposites were characterized by XRD, IR, VSM and TEM techniques. The diffraction patterns show the formation of a single magnetic phase identified as CoFe₂O₄. Magnetic nanoparticles with average size less than 50 nm were obtained which are well dispersed in the silica matrix. The combination of different metals concentrations and calcining temperatures allowed obtaining samples with magnetization ranging from 3.6 to 25.3 emu/g.     

A time-resolved luminescence spectroscopy study of non-linear optical crystals K2Al2B2O7

We report the results of complex study of luminescence and dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals obtained using low-temperature luminescence-optical vacuum ultraviolet spectroscopy with sub-nanosecond time resolution under selective photoexcitation with synchrotron radiation. The paper discusses the decay kinetics of photoluminescence (PL), the time-resolved PL emission spectra (1.2–6.2 eV), the time-resolved PL excitation spectra and the reflection spectra (3.7–21 eV) measured at 7 K. On the basis of the obtained results three absorption peaks at 4.7, 5.8 and 6.5 eV were detected and assigned to charge-transfer absorption from O^2? to Fe³⁺ ions; the intrinsic PL band at 3.28 eV was revealed and attributed to radiative annihilation of self-trapped excitons, the defect luminescence bands at 2.68 and 3.54 eV were separated; the strong PL band at 1.72 eV was revealed and attributed to a radiative transition in Fe³⁺ ion.     

Effect of calcination temperature on phase transformation,structural and optical properties of sol–gel derived ZrO2 nanostructures

Zirconia (ZrO₂) nanostructures of various sizes have been synthesized using sol–gel method followed by calcination of the samples from 500 to 700 °C. The calcined ZrO₂ powder samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infra-red spectroscopy (FT-IR), UV–visible spectroscopy (UV–vis.), Raman spectroscopy (RS) and thermogravimetric analysis (TGA). The phase transformation from tetragonal (t) to monoclinic (m) was observed. The average diameter of the ZrO₂ nanostructures calcined at 500, 600 and 700 °C was calculated to be 8, 17 and 10 nm, respectively. The ZrO₂ sample calcined at 500 °C with tetragonal phase shows a direct optical band gap of 5.1 eV. The value of optical band gap is decreased to 4.3 eV for the ZrO₂ calcined at 600 °C, which contains both tetragonal (73%) and monoclinic (27%) phases. On further calcination at 700 °C, where the ZrO₂ nanostructures have 36% tetragonal and 64% monoclinic phases, the optical band gap is calculated to be 4.8 eV. The enhancement in optical band gap for ZrO₂ calcined at 700 °C may be due to the rod like shape of ZrO₂ nanostructures. The tetragonal to monoclinic phase transformation was also confirmed by analyzing Raman spectroscopic data. The TG analysis revealed that the ZrO₂ nanostructure with dominance of monoclinic phase is found to be more stable over the tetragonal phase. In order to confirm the phase stability of the two phases of ZrO₂, single point energy is calculated corresponding to its monoclinic and tetragonal structures using density functional theory (DFT) calculations. The results obtained by theoretical calculations are in good agreement with the experimental findings.     

Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

In₂S₃ thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In₂S₃ thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In₂S₃ phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.     

Superconducting characteristics and microstructure of polycrystalline Zn-doped In2O3 films

In order to investigate the relation among the superconducting transition T_c, carrier density n, resistivity ρ and the microstructure in the polycrystalline (In₂O₃)_1?x–(ZnO)_x films, we prepared specimen films by post annealing of amorphous films with x = 0.025 at various annealing temperature T_a and for annealing time t_a = 1 h and 4 h. As for microstructures, we have investigated the distribution of elements by scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). We have found followings: (1) The annealed films clearly show the superconductivity of which T_c depends on T_a, t_a and n. This indicates that the superconductivity is determined by the combination of crystallinity and carrier density. (2) The data on STEM–EELS spectra mapping of indium plasmon indicate that droplets of the pure indium phase exist inside a film, where the distribution of these droplets dispersed. Therefore, it seems that droplets do not form an electrical conducting path, that is, it is possible that observed superconductivity is due to intrinsic characteristic of polycrystalline (In₂O₃)_1?x–(ZnO)_x films.     

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

The structural and electronic properties of group III rich In_0.53Ga_0.47As(001) have been studied using scanning tunneling microscopy/spectroscopy (STM/STS). At room temperature (300 K), STM images show that the In_0.53Ga_0.47As(001)–(4 × 2) reconstruction is comprised of undimerized In/Ga atoms in the top layer. Quantitative comparison of the In_0.53Ga_0.47As(001)–(4 × 2) and InAs(001)–(4 × 2) shows the reconstructions are almost identical, but In_0.53Ga_0.47As(001)–(4 × 2) has at least a 4× higher surface defect density even on the best samples. At low temperature (77 K), STM images show that the most probable In_0.53Ga_0.47As(001) reconstruction is comprised of one In/Ga dimer and two undimerized In/Ga atoms in the top layer in a double (4 × 2) unit cell. Density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. DFT molecular dynamics (MD) show the row dimer formation and breaking is facilitated by the very large motions of tricoodinated row edge As atoms and z motion of In/Ga row atoms induced changes in As–In/Ga–As bond angles at elevated temperature. STS results show there is a surface dipole or the pinning states near the valence band (VB) for 300 K In_0.53Ga_0.47As(001)–(4 × 2) surface consistent with DFT calculations. DFT calculations of the band-decomposed charge density indicate that the strained unbuckled trough dimers being responsible for the surface pinning.