CO2 laser assisted removal of UO2 and ThO2 particulates from metal surface

Pulsed laser assisted removal of uranium dioxide and thorium dioxide particulates from stainless steel surface have been studied using a TEA CO₂ laser. Decontamination efficiency is measured as a function of laser fluence and number of pulses. Threshold fluence for the removal of UO₂ particulates has been found to be lower than that required for the removal ThO₂ particulates. Usage of a ZnSe substrate, that is transparent to the laser wavelength used here, enabled us to decouple the cleaning effect arising out of absorption in the particulates from that in the substrate and has contributed towards understanding the mechanism responsible for cleaning. The experimental observations are also corroborated by simple theoretical calculations.     

Some aspects of CO2 laser induced fluorescence in SF6−H2 mixtures

Measurements in SF₆?H₂ mixtures of HF¹ fluorescence at 2.8 μm induced by pulsed CO₂ laser radiation are reported. The dependence of fluorescence intensity on laser fluence is found to be strongly affected by the laser beam geometry in the interaction region. Our results show that the technique of HF¹ fluorescence intensity detection can be a sensitive and reliable single-shot measure of multiple-photon dissociation of SF₆ in a collisionless regime on condition that the laser fluence is uniform along the interaction region which is monitored.     

Patterning of amorphous and polycrystalline Ni78B14Si8 with a focused-ion-beam

The machining response of amorphous and crystalline Ni₇₈B₁₄Si₈ was investigated when structuring substrates using focused-ion-beam (FIB) milling. In particular, the sputtering yield as a function of the scan speed, and the effects of ion fluence and scan speed on the milled depth were studied. The ion fluence dependent evolution of the cross-sectional profiles of trenches was examined by atomic force microscopy (AFM). When milling amorphous Ni₇₈B₁₄Si₈, it was found that the sputtering yield first decreased with increasing the beam scan speed, then kept constant within the scan speed range, up to 710 nm/s, investigated in this work; it was also found that the milled depth was almost proportional to the ion beam fluence. The patterning of polycrystalline Ni₇₈B₁₄Si₈ resulted in anisotropic milling-rates due to the varying orientation of the grains in the material. The analysis of the profile evolution in both materials indicated that the surface finish of trenches was scan speed, ion beam fluence and scan strategy dependent. The study demonstrated that direct patterning by FIB could be used for producing masters in amorphous Ni-based alloys for injection moulding and hot embossing.     

Crystallization of amorphous Ge2Sb2Te5 films induced by a single femtosecond laser pulse

Crystallization is achieved in amorphous Ge₂Sb₂Te₅ films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the femtosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs.     

Soft vibrational mode in LiNbO3 and LiTaO3

The temperature dependence of the far-infrared reflectivity as obtained with a scanning interferometer for the A₁- and E-type modes of both LiNbO₃ and LiTaO₃ is reported in the ferroelectric phase. Results of a Kramers-Kronig analysis are compared with Raman and neutron scattering data which are controversial about the existence of a soft vibrational mode. For LiTaO₃, spectra are obtained 300 K above the Curie temperature, in the paraelectric phase. The lowest-frequency A₁ (TO) mode is unambiguously found as soft and becomes rapidly overdamped.     

Analyses of surface coloration on TiO2 film irradiated with excimer laser

TiO₂ film of around 850 nm in thickness was deposited on a soda-lime glass by PVD sputtering and irradiated using one pulse of krypton-fluorine (KrF) excimer laser (wavelength of 248 nm and pulse duration of 25 ns) with varying fluence. The color of the irradiated area became darker with increasing laser fluence. Irradiated surfaces were characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Surface undergoes thermal annealing at low laser fluence of 400 and 590 mJ/cm². Microcracks at medium laser fluence of 1000 mJ/cm² are attributed to surface melting and solidification. Hydrodynamic ablation is proposed to explain the formation of micropores and networks at higher laser fluence of 1100 and 1200 mJ/cm². The darkening effect is explained in terms of trapping of light in the surface defects formed rather than anatase to rutile phase transformation as reported by others. Controlled darkening of TiO₂ film might be used for adjustable filters.     

Damage performance of TiO2/SiO2 thin film components induced by a long-pulsed laser

In order to study the long-pulsed laser induced damage performance of optical thin films, damage experiments of TiO₂/SiO₂ films irradiated by a laser with 1 ms pulse duration and 1064 nm wavelength are performed. In the experiments, the damage threshold of the thin films is measured. The damages are observed to occur in isolated spots, which enlighten the inducement of the defects and impurities originated in the films. The threshold goes down when the laser spot size decreases. But there exists a minimum threshold, which cannot be further reduced by decreasing the laser spot size. Optical microscopy reveals a cone-shaped cavity in the film substrate. Changes of the damaged sizes in film components with laser fluence are also investigated. The results show that the damage efficiency increases with the laser fluence before the shielding effects start to act.     

Selective desorption from the binary coadsorbate C2H6CH3FNaCl by resonant vibrational excitation with laser infrared radiation

After measuring the linear infrared absorption spectrum of the coadsorbate, selective desorption of CH₃F from the binary coadsorbate C₂H₆CH₃FNaCl under ultrahigh vacuum conditions at 12o K stimulated by resonant CO₂ laser pulses of small fluence ～ 0.1 J·cm^t?2 has been carried out. No desorption of ethane, which is slightly more volatile, but has no significant infrared absorption at the laser frequency, was observed. The primary activation step is the resonant multiphoton excitation of the most intense internal CH₃FNaCl adsorbate vibration, the CF stretching mode ν₃. The substance separation seems to indicate high localisation of the activation in this desorption and could be of interest for applications.     

High-energy-neutron irradiation of A15 Mo0.4Tc0.6

High-energy-neutron (E #62; 1 MeV) irradiation of the A15 phase, Mo_0.4Tc_0.6, to a fluence of 1.9 × 10²⁰ neutrons/cm² resulted in only a slight decrease in the superconducting transition temperature (13.4 to 13.1 K). This is in sharp contrast to the results reported for comparable irradiations of high T_c, Nb-based A15 compounds. The results are discussed in terms of the nature of the B atom in the A₃B structure and related to the superconducting properties of an A2 type bcc phase of the same composition.     

Ar离子注入YBa2Cu3O7-x超导薄膜中微结构变化的透射电子显微镜研究

Ar离子注入YBa₂Cu₃O_7-x超导薄膜后,不仅会引起样品超导转变温度T_c和临界电流密度J_c的下降,还会使样品的正常态由金属型变为半导体型。透射电子显微镜观察发现在小剂量(<5×10¹²Ar/cm²)注入情况下,样品的晶格结构几乎不受影响。随着注入剂量的增加,晶格损伤越来越严重,最终变成非晶态。对实验结果的分析表明,Ar离子注入引起YBa_{2< 关键词：}     

Effect of fast neutron irradiation on magnetic properties of fullerene superconductor Rb3C60

Effects of fast neutron irradiation and post-annealing on magnetic properties of Rb₃C₆₀ were studied through the dc magnetization measurement. Rb₃C₆₀ powder samples were prepared in an evacuated quartz glass tube, and the temperature and the magnetic field dependences of dc magnetization were measured before and after irradiation and after post-annealing. The neutron fluences were 1.0, 1.8 and 3.3 × 10¹⁶ n/cm², and the post-annealing was made at a temperature of 473 K for 3 h. Magnetic hysteresis of the samples irradiated at the fluence of 1.8 and 3.3 × 10¹⁶ n/cm² disappeared, and the hysteresis curves hardly changed at the fluence of 1.0 × 10¹⁶ n/cm². As for the post-annealing effect, the hysteresis curves of the sample irradiated at the fluence of 1.8 × 10¹⁶ n/cm² were completely recovered after annealing, while those of the other samples, which had a magnetic background before irradiation, were not recovered. In this study, it was found that the loss of superconductivity in Rb₃C₆₀ powder is observed when the neutron irradiation fluence exceeds 1.0 × 10¹⁶ n/cm², and the lost superconductivity is completely recovered by the post-annealing at 473 K for 3 h.     

Stimulated emission from trapped excitons in SnO2 nanowires

The pump fluence dependent photoluminescence (PL) spectra of SnO₂ nanowires were investigated, which were synthesized with a high-temperature chemical reduction method. The integrated intensity of the narrower peak at 3.2 eV experiences a strong superlinear dependence on the pump fluence, and the narrowest width of the sharp peak is only 19 meV. Moreover, under high excitation fluence, an ultrafast decay time (less than 20 ps) appears in the time-resolved PL spectra. The emission of these SnO₂ nanowires shows strong apparent stimulated emission behaviors although the SnO₂ is a dipole forbidden direct gap semiconductor. The stimulated emission should relate to the localized islands on the surface of nanowire, which was observed through the high resolution transmission electron microscopy (HRTEM) image. The giant-oscillator-strength effect of bound exciton generated from the localized islands was considered to induce the stimulated emission of SnO₂ nanowires.     

F2 laser induced oxidation of inorganic material

Transparent SiO₂ thin films were selectively fabricated on Si wafer by 157 nm F₂ laser in N₂/O₂ gas atmosphere. The F₂ laser photochemically produced active O(¹D) atoms from O₂ molecules in the gas atmosphere; strong oxidation reaction could be induced to fabricate SiO₂ thin films only on the irradiated areas of Si wafer. The oxidation reaction was sensitive to the single pulse fluence of F₂ laser. The irradiated areas were swelled and the height was approximately 500-1000 nm at the 205-mJ/cm² single pulse fluence for 60 min laser irradiation. The fabricated thin films were analytically identified to be SiO₂ by the Fourier-transform IR spectroscopy. The SiO₂ thin films could be also removed by subsequent chemical etching to fabricate micro-holes 50 nm in depth on Si wafer for microfabrication.     

SrTiO3 homoepitaxy by the pulsed laser deposition method: island, layer-by-layer, and step-flow growth

SrTiO₃ homoepitaxy was investigated under various conditions using the pulsed laser deposition method. The growth mode was determined by in-situ reflection high-energy electron diffraction, and the surface of the films was characterized by ex-situ atomic force microscopy. At the laser fluence of 0.68 J/cm², island growth was observed below 500 °C substrate temperature, while the growth mode turned into layer-by-layer growth above 500 °C. On further raising the substrate temperature, the step-flow growth mode prevailed above 800 °C. We thus demonstrated that step-flow growth in SrTiO₃ homoepitaxy is possible at a temperature as low as 800 °C.     

Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

La_0.8Sr_0.2MnO₃ films were prepared on SrTiO₃ (STO) and LaAlO₃ (LAO) substrates using excimer laser-assisted metal organic deposition (ELAMOD). For the LAO substrate, no epitaxial La_0.8Sr_0.2MnO₃ film was obtained by laser irradiation in the fluence range from 60 to 110 mJ/cm² with heating at 500 °C. On the other hand, an epitaxial La_0.8Sr_0.2MnO₃ film on the STO substrate was formed by laser irradiation in the fluence range from 60 to 100 mJ/cm² with heating at 500 °C. To optimize the electrical properties for an IR sensor, the effects of the laser fluence, the irradiation time and the film thickness on the temperature dependence of the resistance and temperature coefficient of resistance (TCR: defined as 1/R·(dR/dT)) of the LSMO films were investigated. An LSMO film on the STO substrate that showed the maximum TCR of 3.9% at 265 K was obtained by the ELAMOD process using the KrF laser.     

Investigation on upconversion photoluminescence of Bi3TiNbO9:Er:Yb thin films

Bi₃TiNbO₉:Er³⁺:Yb³⁺ (BTNEY) thin films were fabricated on fused silica by pulsed laser deposition. It was demonstrated that different laser fluence and substrate temperature during growth of BTNEY upconversion photoluminescence (UC-PL) samples control the film’s grain size and hence influences the UC-PL properties. The average grain size of BTNEY thin films deposited on fused silica substrates with laser fluence 4, 5, 6, and 7 J/cm² are 30.8, 35.9, 40.6, and 43.4 nm, respectively. The 525 nm emission intensities increase with the deposition laser fluence and the emission intensities of BTNEY thin film deposited under 700 and 600 °C are almost 24 and 4 times, respectively, as strong as those of samples under 500 °C. The grain size of BTNEY thin film increases with the increasing temperature. UC-PL of BTNEY films is enhanced by increasing grain size of the films.     

Raman spectrum of α and β-Pb3(PO4)2

The Raman spectrum of Pb₃(PO₄)₂ exhibits a progressive modification from the α to the β phase spectrum. No discontinuities are observed at the transition point.One soft mode of A_g type due to a translation mode parallel to the binary axis appears in the α phase.A strong broadening of the Rayleigh line is also observed above and below the transition point.     

BaF2晶体的取向和入射束的剂量对溅射的影响

２７ｋｅＶ Ａｒ^＋离子束沿法向分别入射在ＢａＦ₂单晶（１１１），（１００）和（１１０）的晶面上，用捕获器方法和Ｒｕｔｈｅｒｆｏｒｄ背散射分析法测定了Ｂａ原子的溅射角分布和溅射产额。结果发现不同取向的晶体表面，它们的溅射产额有明显差异。当用剂量为５×１０¹⁷ｉｏｎ／ｃｍ²的Ａｒ^＋离子分别轰击这三种晶面时，其溅射产额的顺序Ｙ_１００＞ｙ_１１１＞ｙ_１１０．对已被上述剂量辐照过的晶面再作相同剂量轰击时，测得的溅射产额明显增大。这些结果被认为是由于在离子辐照过程中表面晶格受损逐步增大所致。 关键词：     

On the order parameter of RbH3(SeO3)2

Rubidium trihydrogen selenite RbH₃(SeO₃)₂ undergoes an improper ferro-electric phase transition due to the condensation of a doubly degenerate soft mode at the zone boundary. Superlattice reflections have been measured using neutron diffraction, and after taking domains into account, it is shown that the measured reflections scale onto the same curve as a function of temperature. The consequences of this scaling are explained in terms of the temperature dependence of the order parameter of the transition.     

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge₂Sb₂Te₅ films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm², respectively.