基于Berreman矩阵的双折射薄膜光谱响应特性计算

采用Berreman特征矩阵方法,通过数值计算研究了双折射薄膜的反射、透射等光谱响应特性。依据电磁场理论的电场分量、磁场分量的界面连续条件,推导了光波在各向异性双轴薄膜中的Berreman转移矩阵,用以分析含有各向异性介质层的复杂薄膜系统的光学性质。这些矩阵递推关系包含了界面处的多点反射,适用于一般的各向异性的多层膜系统,包括入射媒质或基底为各向异性的情况。在文中给出了各向同性入射媒质双轴各向异性膜层一各向同性基底薄膜系统的计算结果,验证了该计算方法的可行性,以此作为进一步研究各向异性薄膜和相关光学薄膜器件设计的理论基础。     

A phenomenological theory of the thermal conductivity of thin films

A phenomenological theory is presented for the lattice thermal conductivity of thin plates (or films) in a contact with another material (e.g. a thin plate covered by an oxide film, a thin film evaporated on a substrate, etc.). In such heterogeneous systems, it is necessary to consider — besides reflections — the exchange of phonons between the phases of which the system is composed. Boundary conditions are formulated for the phonon distribution functions. It is shown that the surrounding material (or the substrate) can exert considerable influence upon the effective thermal conductivity of the plate (film).In conclusion, the authors express their sincere gratitude to . Bárta for valuable discussions on the subject of this paper.     

Investigation of interface roughness cross-correlation properties of optical thin films from total scattering losses

The interface roughness and interface roughness cross-correlation properties affect the scattering losses of high-quality optical thin films. In this paper, the theoretical models of light scattering induced by surface and interface roughness of optical thin films are concisely presented. Furthermore, influence of interface roughness cross-correlation properties to light scattering is analyzed by total scattering losses. Moreover, single-layer TiO₂ thin film thickness, substrate roughness of K9 glass and ion beam assisted deposition (IBAD) technique effect on interface roughness cross-correlation properties are studied by experiments, respectively. A 17-layer dielectric quarter-wave high reflection multilayer is analyzed by total scattering losses. The results show that the interface roughness cross-correlation properties depend on TiO₂ thin film thickness, substrate roughness and deposition technique. The interface roughness cross-correlation properties decrease with the increase of film thickness or the decrease of substrates roughness. Furthermore, ion beam assisted deposition technique can increase the interface roughness cross-correlation properties of optical thin films. The measured total scattering losses of 17-layer dielectric quarter-wave high reflection multilayer deposited with IBAD indicate that completely correlated interface model can be observed, when substrate roughness is about 2.84 nm.     

Effects of thickness on the infrared optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films

Using infrared spectroscopic ellipsometry (IRSE), the optical properties of the Ba_0.9Sr_0.1TiO₃ (BST) ferroelectric thin films with different film thicknesses on Pt/Ti/SiO₂/Si substrates prepared by a modified sol-gel method have been investigated in the 2.5–12.6 m wavelength range. By fitting the measured ellipsometric parameter ( and ) data with a three-phase model (Air/BST/Pt) and the classical dispersion relation for the BST thin films, the optical constants and thicknesses of the thin films have been obtained. The average thickness of the single layer decreases with increasing film thickness. The refractive index of the BST films decreases with increasing thickness in the wavelength range 2.5–11 m, and increases with increasing thickness in the wavelength range 11–12.6 m. However, the extinction coefficient of the BST films monotonously decreases with increasing thickness. It is closely associated with the crystallinity of the thin films, the crystalline size effect and the influence of the interface layer. The absorption coefficient of the BST films with different thicknesses decreases with increasing thickness. PACS 77.55.+f; 78.20.Ci; 78.30.Am; 81.70.Fy; 81.40.Tv     

The surface polariton splitting due to thin surface film LO vibrations

The influence of thin dielectric (LiF) films on the sapphire and rutile surface polaritons has been investigated by the attenuated total reflection technique. It is shown that the LO oscillation of the 100 Å LiF film causes a splitting in the minimum of the surface polariton ATR reflectivity. This splitting is the larger, the larger the film thickness is.     

The determination of the refractive index and the thickness of thin films of aluminium oxide on aluminium by the polarimetric method

Formulas for the reflection of light from glass (i. e. a dielectric) coated with a thin non-metallic film are generalized for the case of the reflection of light from a metal coated with a thin non-metallic film, e. g. a film of aluminium oxide on aluminium. It is shown how the refractive index and the thickness of the aluminium oxide film on an aluminium mirror can be determined by measurements in polarized light. In conclusion the results of Drude's classical theory of thin non-metallic films on metallic mirrors are compared with the results obtained by the author on the basis of the interference of light in thin films.     

Photoelectrochemical Characteristics Of α-Fe2O3 Nanocrystalline Semiconductor Thin Film

-Fe₂O₃ single crystal thin films have been prepared from 45nm diameter colloid. These thin nanocrystalline films exhibit a typical behavior of n-type semiconductor material because of the anodic photocurrent generation. The anodic photocurrent response upon illumination and the reversal spike of cathodic current upon the light switched off suggests that the electrons can flow in both directions and no space charge layer exists at the thin film/electrolyte interface. The decreased photocurrent responses of thicker films can be explained by the electric resistance effect and recombination effect. Moreover, the thicker film will lead to a poor photocurrent response for short wavelength light. Considering the use of sunlight, the thin film thickness should be controlled to an optimal value.     

Generalized ellipsometry and the 4 × 4 matrix formalism

The 4 × 4 matrix formalism described by Berreman and others provides a method of determining the reflection and transmission properties of general stratified anisotropic materials. This formalism, when combined with the work of Azzam and Bashara and others on generalized ellipsometry, can be used to predict the extinction settings of a nulling ellipsometer for reflection of light from virtually any type of film covered surface provided that the surface is flat and that any films are uniform. In the present work the 4 × 4 matrix formalism is reviewed and combined with the equations necessary to predict the null settings of an ellipsometer. Examples of the application of these calculations to an optically active surface and a biaxial surface are also presented.     

Enhanced ionic conductivity at the interface between sapphire and solid lithium iodide

We have studied the enhanced ionic conductivity of thin films of LiI evaporated onto a planar sapphire surface carrying interdigital Au-electrodes. The interface conductivity parallel to the surface was measured in situ for increasing film thickness, up to 3,000 Å. The specific conductivity of LiI in the first 300 Å — adjacent to the sapphire — was found to exceed the bulk conductivity of LiI by nearly one order of magnitude. From our observations we conclude that the specific conductivity of LiI decreases exponentially with distance from the sapphire surface reaching the bulk LiI-value only at a distance of 3,000 Å. The conductivity of a 350 Å thick film varies with temperature (25°CT120°C) in accordance with an activation energy of 0.40±0.04 eV. This is in good agreement with the activation energy of bulk LiI in the extrinsic region.     

Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.     

The physics of pyroelectric infrared devices

The absorption of radiation with pyroelectric detectors and the thermal properties of these devices are discussed using a simple physical picture — the physics of waves. Considered are the reflection, transmission and interference of electromagnetic and of thermal waves within the pyroelectric sensor arrangement. In particular, thin metal films, quarter wavelength structures, and anti-reflection coatings on metal films as absorber structures are discussed. The effect of the substrate on the pyroelectric response is treated and new figures of merit are introduced for the comparison of sensor materials which are mounted on a heat sink.     

Immersion transmission ellipsometry (ITE) for the determination of orientation gradients in photoalignment layers

The capability of the method of immersion transmission ellipsometry (ITE) (Jung et al. Int Patent WO, 2004/109260) to not only determine three-dimensional refractive indices in anisotropic thin films (which was already possible in the past), but even their gradients along the z-direction (perpendicular to the film plane) is investigated in this paper. It is shown that the determination of orientation gradients in deep-sub-μm films becomes possible by applying ITE in combination with reflection ellipsometry. The technique is supplemented by atomic force microscopy for measuring the film thickness. For a photo-oriented thin film, no gradient was found, as expected. For a photo-oriented film, which was subsequently annealed in a nematic liquid crystalline phase, an order was found similar to the one applied in vertically aligned nematic displays, with a tilt angle varying along the z-direction. For fresh films, gradients were only detected for the refractive index perpendicular to the film plane, as expected.     

The protective properties of ultra-thin diamond like carbon films for high density magnetic storage devices

With the increase of magnetic storage density, the thickness of the protective diamond like carbon (DLC) film on the surfaces of head and disk is required as thin as possible. In this paper, the structure, mechanical properties and corrosion and oxidation resistance of ultra-thin DLC films are investigated. The ultra-thin DLC films were deposited by using filtered cathodic vacuum arc (FCVA) technique. The exact thickness of the ultra-thin DLC film was determined by high resolution transmission electron microscope (HRTEM). Raman analysis indicates that the ultra-thin DLC film presents ta-C structure with high sp³ fraction. In the wear test, a diamond tip was used to simulate a single-asperity contact with the film surface and the wear marks were produced on the film surface. The wear depths decrease with film thickness increasing. If the film thickness was 1.4 nm or above, the wear depth was much lower than that of Si substrate. This indicates that the ultra-thin DLC film with thickness of 1.4 nm shows excellent wear resistance. Corrosion tests in water and oxidation tests in air were carried out to investigate the diffusion barrier effect of the ultra-thin DLC films. The results show that the DLC film with thickness of 1.4 nm provides adequate coverage on the substrate and has good corrosion and oxidation resistance.     

Nanometer-microscopy of the electron transmission through an ultrathin (3–22 nm) Au film and of the Au-Si schottky barrier height

Direct imaging with nanometer scale resolution of the Schottky barrier height and of the ballistic transmission of electrons through an ultrathin metal film is demonstrated for the first time. The images are obtained by applying a new pixel-by-pixel evaluation method to the ballistic electron emission spectroscopy (BEES). We find a laterally uniform Schottky barrier height _B=0.88 eV for ultrathin (3–22 nm) Au films evaporated on Si. The transmission coefficient is strongly correlated with the island structure of the Au film. A transmission decay length =14 nm is determined by a statistical analysis of the transmission coefficient with variation of the film thickness.     

A remark on the reflection of light from a metal with a thin interfering non-metallic film

A number of results following from the author's theory of the reflection of light from a metal with a thin interfering non-metallic film are given. From the dependence of the azimuth and the phase difference on the thickness d ₁ of a thin film of Al₂O₃ with an index of refraction n ₁==1.635on aluminium it follows that the older Drude-Tronstad theory only holds for the thinnest films, at the most up to thicknesses around 100 Å.The course of the curves calculated according to the author's theory agree with the curves measured by Tronstad and Höverstad23 years ago for the depositing of films of Al₂O₃ on aluminium, in a solution of HNO₃.     

Rapid growth of ultra thin SiO2 films by a large-area electron beam

Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 31 (O₂/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Ų/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm² and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.     

Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

Optical properties of nickel(II)-azo complexes thin films for potential application as high-density recordable optical recording media

Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nm wavelength region were measured. Optical constants (complex refractive index ) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants , absorption coefficients α as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nm or less.     

Calculation of the electron-transfer parameters of thin polycrystalline films of metals

Electron transfer parametrs (scattering coefficient R, crystal-boundary transmission coefficient r, film-surface reflection coefficient) are calculated at temperatues t_msm=120, 293, and 573 K using Sc and Re films as an example. The conditions L d and L < d are satisfied, respectively, for these films (L is the mean diameter of the crystals and d is the thickness of the specimens). The films were obtained in a vacuum of 10^–6-5·10^–7 Pa. In the thickness ranges d200–500 Å (Re) and 300–800 Å (Sc), the films had a mean crystallite size of 250 and 600 Å, respectively. Experimental data on the dimensional effect of the temperature coefficient of resistance was analyzed within the framework of the Mayadas-Shatzkes (MS) theory, the model of isotropic carrier scattering, and the three-dimensional Tellier-Tosser-Pichard (TTP) model. It was concluded that the electrophysical properties of Sc films are satisfactorily described by the TTP model, while the MS theory yields exaggerated values of the coefficients r and p. In the case of films of Re, use was made of the isotropic scattering model and an approximation of the three-dimensional model for polycrystalline films. It was found that the coefficients r and R are independent of temperature.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 42–47, June, 1988.We thank V. B. Lobode and L. G. Kulemzina for their assistance in conducting the investigation.     

Enhancement of Secondary Radiation of Chromophores Adsorbed on the Rough Surface of Thin Silver Films under Conditions of Resonance Excitation

The spectra of giant Raman scattering of light and surfaceenhanced fluorescence of certain chromophores absorbing light in the visible spectrum region are investigated. The factors that have an effect on the enhancement of secondary radiation of chromophores adsorbed on the surface of rough silver films under conditions of resonance excitation are determined. The spectra of mirror reflection of light by the substrates used are considered. The coefficients of diffuse and mirror reflection, absorption, and transmission of light by thin silver films at wavelengths of 488 and 633 nm are determined. The scheme of an experimental system for observation of the spectra of giant Raman scattering and surfaceenhanced fluorescence on the source side of a transparent substrate is proposed. Conclusions on the predominant contribution of the resonance excitation of surface plasmons to the enhancement of the signal of the giant Raman scattering and surfaceenhanced fluorescence of molecules adsorbed on the rough metal surface are drawn.