Magnetophonon resonance in a GaAs quantum well with AlAs/GaAs superlattice barriers at high filling factors

The magnetotransport of a high-mobility 2D electron gas in single GaAs quantum wells with AlAs/GaAs superlattice barriers is studied at high filling factors. For the selectively doped structures under study in the temperature range from 10 to 25 K, magnetoresistance oscillations periodic in the inverse magnetic field are observed with their frequency being proportional to the Fermi wave vector of the 2D electron gas. The experimental results are explained by the interaction of the 2D electron gas with leaky interface acoustic phonons.     

Magnetoresistance oscillations due to Zener tunneling and microwave radiation in a 2D electron gas in GaAs quantum well with AlAs/GaAs superlattices barriers

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces magnetoresistance oscillations periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the covered frequency range depends on the microwave radiation power.     

Electron spin resonance on a two-dimensional electron gas in a single AlAs quantum well

Direct electron spin resonance (ESR) on a high mobility two-dimensional electron gas in a single AlAs quantum well reveals an electronic g factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 G. The ESR amplitude and its temperature dependence suggest that the signal originates from the effective magnetic field caused by the spin-orbit interaction and a modulation of the electron wave vector caused by the microwave electric field. This contrasts markedly with conventional ESR that detects through the microwave magnetic field.     

Modified excitonic resonances in GaAs/AlAs multiple quantum well heterostructures with ultrathin barriers

Excitonic resonance structures in GaAs/AlAs multiple quantum well heterostructures with varying barrier-layer thicknessesL _B down to 1.3 nm are investigated for two sets of samples with the nominal well widths ofL _Z =9.2 and 6.4 nm, by 2K photoluminescence excitation spectroscopy. The observed resonance energies of then=1 heavyhole (1 hh) and light-hole (1 lh) free excitons imply that quantum confinement effects persist at least down to the decreased barrier-layer thickness ofL _B =1.3 nm. This result is inconsistent with the red shifts expected from the simple well-coupling theory within the one-band Kronig-Penney model at the point. Instead, blue shifts of 6–8 meV (8–17 meV) are observed for the 1 hh (1 lh) excitonic resonance peaks whenL _B is decreased from 10 to 2 nm. A relative decrease of the oscillator strength of the 1 lh transition compared to the 1 hh transition is also observed asL _B is decreased. These results manifest important effects of the indirect-gap barrier material for the actual wavefunction matching across the interface and the breakdown of the envelope function approach to GaAs/AlAs quantum well heterostructures with ultrathin barriers.     

Commensurate oscillations of the magnetoresistance of a two-dimensional electron gas in GaAs quantum wells with corrugated heteroboundaries

Oscillations of the magnetoresistance commensurate with the spatial modulation period of the growth surfaces were observed in selectively doped GaAs quantum wells with AlAs/GaAs superlattice barriers grown by molecular beam epitaxy. The experimental data obtained are explained by the lateral potential modulation of the two-dimensional electron gas in narrow GaAs quantum wells with corrugated heteroboundaries and agree with the two-dimensional distribution of the local capacitance in such structures.     

Oscillations of the magnetoresistance of a two-dimensional electron gas under microwave irradiation: Influence of the irradiation frequency

We present measurements of the magnetoresistance of a two-dimensional electron gas (2DEG) under continuous microwave as a function of the irradiation frequency. In a previous work by Simovič et al. [Phys. Rev. B 71 (2005) 233303], the magnetoresistance under microwave was shown to be modulated by oscillations of large amplitude that are periodic with magnetic field, their period and phase depending strongly on the electron density. Here we show that the phase and the amplitude of the microwave-induced oscillations also depend on the frequency of irradiation and the sign of the magnetic field.     

Coherent Zeeman resonance from electron spin coherence in a mixed-type GaAs/AlAs quantum well

Coherent Zeeman resonance from electron spin coherence is demonstrated in a Lambda-type three-level system, coupling electron spin states via trions. The optical control of electron density that is characteristic of a mixed-type quantum-well facilitates the study of trion formation as well as the effects of many-body interactions on the manifestation of electron spin coherence in the nonlinear optical response.     

Spin dephasing of a two-dimensional electron gas in a GaAs quantum well near odd filling factors

The coherent spin dynamics of a two-dimensional electron gas in a GaAs/AlGaAs quantum well is experimentally studied near the filling factors ν = 3 and 1. The nonmonotonic character of the dependence of the spin dephasing time of a Goldstone spin exciton on the filling factor is found experimentally. The observed effect can be due to the formation of a new spin relaxation channel, when the main state of the two-dimensional electron system is a spin-textured liquid.     

Coherent spin dynamics of different density high mobility two-dimensional electron gas in a GaAs quantum well

We have addressed the dependence of quasi-two-dimensional electron spin dephasing time on the electron gas density in a 17-nm GaAs quantum well using the time-resolved magneto-optical Kerr effect. A superlinear increase in the electron dephasing time with decreasing electron density has been found. The degree of electron spin relaxation anisotropy has been measured and the dependence of spin-orbit splitting on electron gas density has been determined.     

Giant magnetoresistance in a two-dimensional electron gas modulated by periodically repeated magnetic barriers

The giant magnetoresistance effect is investigated in a two-dimensional electron gas modulated by periodically repeated magnetic barriers, which can be realized by depositing parallel ferromagnets on the top and the bottom of a heterostructure. It is found that the magnetoresistance ratio (MRR) of the present system shows a strong dependence on the number of ferromagnetic unit cells. The modified MRR (MMRR) shows oscillations, where the number of peaks is determined by the number of units, and our study indicates that for experimentally accessible parameters for a GaAs heterostructure the value of the MMRR can be as high as 55% for a realistic electron density.     

Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current–voltage measurements are presented for two MBE-grown structures clad with Si-doped Al_0.45Ga_0.55As layers onn ⁺  -GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.     

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and threedimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.     

量子阱中二维电子气的性质

利用提出的三维不对称方势阱模型，对半导体量子阱中二维电子气的性质进行了研究，确定其量子能级和费米能量，并对有关结果进行了讨论。     

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

By taking the influence of optical phonon modes into account, this paper adopts the dielectric continuum phonon model and force balance equation to investigate the electronic mobility parallel to the interfaces for AlAs/GaAs semiconductor quantum wells (QWs) under hydrostatic pressure. The scattering from confined phonon modes, interface phonon modes and half-space phonon modes are analysed and the dominant scattering mechanisms in wide and narrow QWs are presented. The temperature dependence of the electronic mobility is also studied in the temperature range of optical phonon scattering being available. It is shown that the electronic mobility reduces obviously as pressure increases from 0 to 4GPa, the confined longitudinal optical (LO) phonon modes play an important role in wide QWs, whereas the interface optical phonon modes are dominant in narrow QWs, the half-space LO phonon modes hardly influence the electronic mobility expect for very narrow QWs.     

Delocalization of phonon-plasmon modes in GaAs/AlAs superlattices with tunnel-thin AlAs barriers

The technique of Raman spectroscopy has been used to investigate doped (n-type) and undoped GaAs/AlAs superlattices with AlAs barrier thicknesses from 17 to 1 monolayers. The peak corresponding to the scattering by a two-dimensional plasmon was found in the Raman spectrum of a doped superlattice with relatively thick barriers. The position of the experimental peak corresponded to the value calculated in the model of plasma oscillations in periodic planes of a two-dimensional electron gas. The electron tunneling effects played an increasingly prominent role as the AlAs barrier thickness decreased. The peaks corresponding to the scattering by coupled phonons with three-dimensional plasmons were found in the Raman spectra for a superlattice with an AlAs thickness of 2 monolayers; i.e., the delocalization of coupled modes was observed. In this case, the folding of acoustic phonons was observed in the superlattice under consideration, indicative of its good periodicity, while the localization of optical phonons in GaAs layers was observed in undoped superlattices with an AlAs thickness of 2 monolayers.     

Quantum Hall effect in a two-dimensional electron gas with spin-orbit coupling in the field of a surface superlattice

The Hall conductance of a two-dimensional electronic system with Rashba spin-orbit coupling in the presence of an external periodic potential of a superlattice and a perpendicular magnetic field has been calculated. The calculations were performed for an electron gas with parameters typical both of a system with weak spin-orbit coupling (AlGaAs/GaAs) and a system with relatively strong Rashba coupling (InGaAs/InAs).