Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted Al_xGa_1−xN with different AlN contents (in the range 0≤x≤0.2) and from implanted In_xAl_1−xN with different InN contents (x=0.13 and 0.19) close to the lattice match with GaN. The Tm³⁺ emission spectrum depends critically on the host material. The blue emission from Al_xGa_1−xN:Tm peaks in intensity for an AlN content of x0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 C. The blue emission from In_0.13Al_0.87N:Tm, annealed at 1200 C, is more than ten times stronger than that from Al_xGa_1−xN:Tm, x≤0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.     

Impedometric anion sensing behaviour of InxGa1 − xN films grown by modified activated reactive evaporation

In the present work, In_xGa_{1 − x}N films with different indium compositions (x = 0.88, 0.63, 0.36 and 0.18) were prepared on glass substrates using a commercially viable technique known as modified activated reactive evaporation. Electrochemical impedance was used to investigate the anion sensing properties of these films for KCl, KI and KNO₃ salt solutions of different molar concentrations. The anion sensing behaviour of InGaN films is attributed to the presence of high n-type background carrier concentration and positively charged surface donor states. The InGaN based anion sensors were found to have good sensitivity with faster response and recovery time. The film with x = 0.63 was found to have the highest sensitivity for all the anions due to the presence of more active surface area together with large number of surface donor states.     

Tuning of long-wavelength emission in InxGa1−xAs quantum dot structures

This work explores the conditions to obtain the extension of the PL emission beyond 1.3 μm in InGaAs quantum dot (QD) structures growth by MOCVD. We found that, by controlling the In incorporation in the barrier embedding the QDs, the wavelength emission can be continuously tuned from 1.25 μm up to 1.4 μm at room temperature. However, the increase in the overall strain of the structures limits the possibility to increase the maximum gain in the QD active device, where an optical density as high as possible is required. By exploring the kinetics of QD surface reconstruction during the GaAs overgrowth, we are able to obtain, for the first time, emission beyond 1.3 μm from InGaAs QDs grown on GaAs matrix. The wavelength is tuned from 1.26 μm up to 1.33 μm and significant improvements in terms of line shape narrowing and room temperature efficiency are obtained. The temperature-dependent quenching of the emission efficiency is reduced down to a factor of 3, the best value ever reported for QD structures emitting at 1.3 μm.     

Time-resolved magneto-optical properties of InxGa1−xAs V-shaped single quantum wires

In this work we present a time-resolved magneto-luminescence investigation (up to 8 T) of InGaAs V-shaped quantum wires (QWRs) with different In content, as a function of temperature and the applied magnetic field. The states of the wires were investigated by CW PL and quantitatively compared with the results of a numerical solution of the two-dimensional Schrodinger equation. Time-resolved experiments performed in magnetic field at different temperatures indicate the existence of a competition between the electron confinement occurring in deep QWRs at low temperature, and the magnetic confinement prevailing in shallower QWRs.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Oscillator strength of type-II light-hole exciton in InxGa1−xAs/GaAs strained single quantum wells

We have investigated the excitonic properties of In_0.15Ga_0.85As/GaAs strained single quantum wells by using photoreflectance spectroscopy and a variational calculation method. We clearly detected the photoreflectance signal of the type-II light-hole exciton, which consists of an electron confined in the InGaAs layer and a light hole located in the thick GaAs layer, in addition to the type-I heavy-hole exciton confined in the InGaAs layer. The calculated results of the overlap integral of the envelope function in the type-II light-hole exciton predict that the oscillator strength is remarkably enhanced with decreasing the InGaAs-layer thickness. This is demonstrated by the layer-thickness dependence of the photoreflectance intensity of the type-II light-hole exciton.     

In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams

Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of Al_xGa_1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×10¹⁰ cm⁻¹ for 90 keV Ga⁺ and 1×10⁹ cm⁻¹ for 200 keV Dy²⁺ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage.     

High performance AlxGa1−xN-based avalanche photodiodes

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. We improved the device performance by designing different epitaxial wafer structure with thinner active multiplication layer. We compare the resulting fabricated devices from these wafers in terms of dark current, photoresponse, avalanche gain performances.     

Bound polaron in a wurtzite GaN/AlxGa1 − xN ellipsoidal finite-potential quantum dot

A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/Al_xGa_1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.     

About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy

Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In Al_xGa_1−xN/GaN quantum wells, due to the adverse actions of quantum confinement, that blue-shifts transition energies, and of the Stark field, that red-shifts them, the transition energies are nearly independent of barrier compositions at a particular well thickness (L₀2.6 nm), at least for x≤0.3. The effect of alloy fluctuations is then minimal, as reflected by a minimum in the quantum well luminescence linewidth when LL₀ for wells grown by molecular beam epitaxy on silicon or sapphire substrates. We use this effect to estimate the average variances of well widths and alloy composition fluctuations. Both results are in good agreement with, respectively, a scanning tunneling microscopy study of GaN (0001) surfaces, and estimates based on the lateral extent of the quantum well excitons.We then discuss the optical properties of the Al_xGa_1−xN barrier material, with particular emphasis on the symmetry of the valence band maximum (Γ₉ or Γ₇). We show that it may play an important role in the apparent barrier luminescence efficiency. We analyse the possible consequences of the barrier Γ₉–Γ₇ crossover on the Al_xGa_1−xN/GaN quantum well properties.     

MOVPE growth study of BxGa(1−x)N on GaN template substrate

BGaN materials with good structural quality and surface morphology have been successfully grown on GaN template substrates by low pressure metal organic vapour phase epitaxy. TEB and NH3 were used as precursors of boron and nitrogen respectively. All the growths were performed under 100% N₂ process gas. Boron concentration was estimated by HRXD measurements combined with SIMS analysis. Single-crystal layers of BGaN with B content as high as 3.6% have been obtained.     

Electronic structure of Ga1−xCrxN investigated by photoemission spectroscopy

We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga_0.937Cr_0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.     

Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/In_xGa_1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

Electron scattering on disordered double-barrier GaAs–AlxGa1−xAs heterostructures

We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double-barrier GaAs–Al_xGa_1−xAs heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral and compositional disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describes channel mixing due to these elastic scattering events. In particular, for realistic degree of disorder, we have found that the effects of compositional disorder on transport properties are negligible as compared to the effects due to lateral disorder.     

Optical properties of AsSe1.5−xTex glassy system

Thin AsSe_1.5−xTe_x films with 0x<1.5 have been prepared by a thermal vacuum evaporation technique onto quartz and glass substrates kept at room temperature (300 K). The optical constants, the refractive index, n, and the absorption index, k, of the films were determined for the investigated compositions of different thickness values (100–300 nm) using spectrophotometric measurements of the transmittance, T, and the reflectance, R, at normal incidence in the spectral range 400–2500 nm. The obtained values of both n and k were found to be independent of the film thickness within the above mentioned thickness range. The estimated indirect and direct optical energy gap decreased as tellurium content increased in the parent sample AsSe_1.5. The values of dispersion energy, E_d, and lattice dielectric constant, _L, of the system have been determined and correlated with the type and amount of chemical bonds and the relative proportion of the constituent elements in the examined compositions.     

Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Indium aluminium antimonide (In_1−xAl_xSb) and cadmium mercury telluride (Cd_xHg_1−xTe) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.     

Raman response of GaAs/AlAs superlattices with AlxGa1−xAs intralayers

We present a theoretical investigation on the effects induced on the Raman spectra of a binary (001) GaAs/AlAs superlattice by an intentionally deposited ternary Al_xGa_1−xAs intralayer. We investigate how the intralayer chemical composition and position affect the GaAs-like response of the host system.     

Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1−xAs

The low-temperature Hall mobility of photoexcited electrons has been measured in Si-doped MBE AlGaAs samples and compared with calculated data using the background acceptor density and the alloy scattering potential as free parameters. The possibility of discriminating between negative- or positive-U electron correlation energy for the DX centre has been investigated through a careful analysis of mobility versus temperature curves relating to different photoexcited electron densities. A crucial role of the acceptor density to explain the experimental data within the positive-U model has been evidenced.     

Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1−xAs/GaAs heterojunction

In this work, we have looked for the correlation between the observed decay of reflection high-energy electron diffraction intensity oscillation and the critical layer thickness in the case of strained In_xGa_1−xAs/GaAs heterojunctions. The value of deading time constant of oscillation depends on the mismatch and on growth parameters, too. The decay of oscillation was described by two deading time constants which are responsible for the influences of the parameters mentioned above. The critical layer thickness was valued from the deading time constant responsible for the influence of mismatch only. The critical layer thickness determined this way shows good agreement with the theoretical model.