Study of optical properties in a cubic quantum dot

In this paper, the effect of hydrostatic pressure on both the intersubband optical absorption coefficients and the refractive index changes is studied for typical GaAs/Al _x  Ga_1?x As cubic quantum dot. We use analytical expressions for the linear and third-order nonlinear intersubband absorption coefficients and refractive index changes obtained by the compact-density matrix formalism. The linear, third-order nonlinear, and total intersubband absorption coefficients and refractive index changes are calculated at different pressures as a function of the photon energy with known values of box length (L), the incident optical intensity (I), and Al concentration (x). According to the results obtained from the present work, we have found that the pressure plays an important role in the intersubband optical absorption coefficient and refractive index changes in a cubic quantum dot.     

Conduction band non-parabolicity effect on the optical absorption coefficient and refractive index changes of spherical quantum dots

Optical absorption coefficients and refractive index changes associated with intersubband transition in typical GaAs/Al_xGa_1−xAs spherical quantum dots are theoretically investigated, both in the presence and in the absence of the conduction band non-parabolicity effect. In this regard, the effect of band non-parabolicity on the eigenvalues and eigenfunctions of the dot has been performed using the Luttinger-Kohn effective mass equation. Also, by means of the compact-density-matrix approach the linear and nonlinear optical absorption coefficients and refractive index changes have been calculated. The results show that magnitudes of these quantities are decreased and the peaks are shifted to the lower energies as the influence of band non-parabolicity is considered.     

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schrödinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al_xGa_1−xAs are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures.     

Intersubband optical absorption coefficients and refractive index changes in a parabolic cylinder quantum dot

Optical absorption coefficients and refractive index changes associated with intersubband transition in a parabolic cylinder quantum dot are theoretically investigated. In this regard, the electronic structure of the dot is studied using the one band effective mass theory, and by means of the compact-density matrix approach the linear and nonlinear optical absorption coefficients and refractive index changes are calculated. The effects of the size of the dot, optical intensity and electromagnetic field polarization on the optical absorption coefficient and refractive index changes are investigated. It is found that absorption and refractive index changes are strongly affected not only by the size of the dot but also by optical intensity and the electromagnetic field polarization.     

Linear and nonlinear intersubband optical absorption coefficients and refractive index changes in a quantum box with finite confining potential

In this work, both the intersubband optical absorption coefficients and the refractive index changes are calculated exactly in a quantum box. Analytical expressions for the linear and nonlinear intersubband absorption coefficients and refractive index changes are obtained by using the compact-density matrix approach. Numerical results are presented for typical GaAs/Al_xGa_1−x As quantum box system. The linear, third-order nonlinear and total absorption and refractive index changes are investigated as a function of the incident optical intensity and structure parameters such as box-edge length and stoichiometric ratio. Our results show that both the incident optical intensity and the structure parameters have a great effect on the total absorption and refractive index changes.     

Intersubband optical absorption coefficients and refractive index changes in modulation-doped asymmetric double quantum well

The linear and the third-order nonlinear optical absorption coefficients and refractive index changes in a modulation-doped asymmetric double quantum well are studied theoretically. The electron energy levels and the envelope wave functions in this structure are calculated by the Schrödinger and Poisson equations self-consistently in the effective mass approximation. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. In this regard, the linear, nonlinear and total intersubband absorption coefficients and refractive index changes are investigated as a function of right-well width (Lw₂) of asymmetric double quantum well. Our results show that the total absorption coefficients and refractive index changes shift toward higher energies as the right-well width decreases. In addition, the total optical absorption coefficients and refractive index changes is strongly dependent on the incident optical intensity.     

Hydrogenic donor impurity in a cubic quantum dot: effect of position-dependent effective mass

In this paper, we intend to study the effect of variable mass on the binding energy. In this regard, we apply an analytic expression for position-dependent effective mass in a cubic quantum dot. Then, we obtain the binding energies of a shallow donor in the quantum dot of GaAs/Al _x Ga_1−x As using a variational procedure within the effective mass approximation. Calculations are presented with a constant effective mass and position-dependent effective mass. It is found that (i) the binding energy decreases as the dot length increases in both the cases of constant and variable masses, (ii) an increase of binding energy is observed when the spatially varying mass is included, and (v) the binding energy shows complicated behavior when the position-dependent mass is included for the small dot size L ≤ 130 ?.     

Electric field induced exciton binding energy and its non-linear optical properties in a narrow InSb/InGaxSb1−x quantum dot

The effect of electric field on the binding energy, interband emission energy and the non-linear optical properties of exciton as a function of dot radius in an InSb/InGa_xSb_1?x quantum dot are investigated. Numerical calculations are carried out using single band effective mass approximation variationally to compute the exciton binding energy and optical properties are obtained using the compact density matrix approach. The dependence of the nonlinear optical processes on the dot sizes is investigated for various electric field strength. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of electric field induced exciton as a function of photon energy are obtained. It is found that electric field and the geometrical confinement have great influence on the optical properties of dots.     

Effect of pressure on intersubband optical absorption coefficients and refractive index changes in a V-groove quantum wire

In this paper, the effect of hydrostatic pressure on the intersubband optical absorption and the refractive index changes in a GaAs/Ga_1−xAl_xAs ridge quantum wire are studied. We use analytical expressions for the linear and third-order nonlinear intersubband absorption coefficients and refractive index changes obtained by the compact-density matrix formalism. The linear, third-order nonlinear, and total intersubband absorption coefficients and refractive index changes are investigated at different pressures as a function of photon energy with known values of width wire (b$b$), the incident optical intensity (I$I$), and the angle θ$\theta$. According to the results obtained from the present work, we have found that the pressure plays an important role in the intersubband optical absorption coefficients and refractive index changes in a V-groove quantum wire.     

Third-order nonlinear optical properties of excitonic state in a semiconductor quantum dot

By considering usual matrix procedures we examine how the exciton affects the nonlinear optical properties of 3-D semiconductor GaAs quantum dot. We calculate the third-order optical susceptibility of the GaAs (well) Al_xGaAs_1?x (barrier), and consequently the refractive index and the absorption coefficient. By increasing the Al content (x) in barrier material, carrier relaxation time is enhanced and the susceptibility peaks and their positions showed a blue shift, which agrees with the existing experimental work. For an anisotropic QD, the third-order nonlinear absorption coefficient depends strongly on the quantum dot width.     

Wetting layer and size effects on the nonlinear optical properties of semi oblate and prolate Si0.7Ge0.3/Si quantum dots

Semi oblate and semi prolate are among the most probable self-organized nanostructures shapes. The optoelectronic properties of such nanostructures are not just manipulated with the height and lateral size but also with the wetting layer element. The practical interest of derivatives of germanium and silicon has a great important role in optoelectronic devices. This study is a contribution to the analysis of linear and nonlinear optical properties of Si_0.7Ge_0.3/Si. In the framework of the effective mass approximation, we solve numerically the Schrödinger equation relative to one particle confined in Si_0.7Ge_0.3/Si semi prolate and semi oblate quantum dots by using the finite element method and by taking into consideration the effect of the wetting layer. The energy spectrum of the lowest states and the dipolar matrix for the fourth allowed transitions are determined and discussed. We also calculate the detailed optical properties, including absorption coefficients, refractive index changes, second and third harmonic generation as a function of the quantum dot sizes. We found that with the change in the size of prolate and oblate quantum dots, there is a shift in the resonance peaks for the absorption coefficient and refractive index. It is due to the modification in the energy levels with changing size. The study proves a redshift in the second harmonic generation and third harmonic generation coefficients with an increase in the height/radius of the oblate/prolate quantum dot, respectively. We also demonstrated the variation of wavefunction inside the quantum dot with the change in wetting layer thickness.     

Linear and nonlinear intersubband optical absorption and refractive index change in asymmetrical semi-exponential quantum wells

Linear and nonlinear intersubband optical absorption and refractive index change in asymmetrical semi-exponential quantum wells are theoretically investigated within the framework of the compact–density–matrix approach and iterative method. The wave functions are obtained by using the effective mass approximation. The energy levels are obtained by numerical method. It is found that the optical absorption coefficients and refractive index changes are strongly affected not only by σ   and _U0$U_0$, but also by the incident optical intensity.     

Electronic states and the resonant optical non-linearity of exciton in a narrow band InSb quantum dot

Binding energy, interband emission energy and the non-linear optical properties of exciton in an InSb/InGa_xSb_1−x quantum dot are computed as functions of dot radius and the Ga content. Optical properties are obtained using the compact density matrix approach. The dependence of non-linear optical processes on the dot sizes is investigated for different Ga concentrations. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of the exciton are calculated for different concentrations of gallium content. It is found that gallium concentration has great influence on the optical properties of InSb/InGa_xSb_1−x dots.     

Linear and Nonlinear Optical Properties of Spherical Quantum Dots:Effects of Hydrogenic Impurity and Conduction Band Non-Parabolicity

Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/Al x Ga 1 x As spherical quantum dot are theoretically investigated,using the Luttinger-Kohn effective mass equation.So,electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach,respectively.Finally,effects of an impurity,band edge non-parabolicity,incident light intensity and the dot size on the linear,the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated.Our results indicate that,the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered.Moreover,incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.     

Nonlinear optical properties of a three-electron quantum dot with account of the Rashba spin–orbit interaction

In this study, a detailed investigation of the nonlinear optical properties such as optical absorption and refractive index change associated with intersubband transitions in a three-electron quantum dot in two dimensions in the presence of the Rashba spin–orbit interaction has been carried out. We present the exact wave functions and energy levels of the system. Numerical results on typical GaAs/AlGaAs materials show that the decrease of the quantum dot radius blueshifts and amplifies the absorption coefficients as well as the refractive index changes, as expected. Additionally, an increase of the optical intensity and relaxation time considerably changes the absorption coefficients and the refractive index changes.     

Intersubband optical absorption coefficient changes and refractive index changes in a two-dimensional quantum pseudodot system

The optical absorption coefficient changes and refractive index changes associated with intersubband transitions in a two-dimensional quantum pseudodot system under the influence of a uniform magnetic field are theoretically investigated. In this regard, the electronic structure of the pseudodot system is studied using the one-band effective mass theory, and by means of the compact density matrix approach linear and nonlinear optical absorption coefficient and refractive index changes are calculated. The effects of an external magnetic field and the geometrical size of the pseudodot system on the optical absorption coefficient and refractive index changes are investigated. It is found that the absorption coefficient and refractive index changes are strongly affected not only by an external magnetic field but also by the geometrical size of the pseudodot system.     

Spatially varying effective mass effects on energy level populations in semiconductor quantum devices

For the analysis and design of semiconductor intersubband devices, accurate values for the Fermi energy and the subband electron population are needed. The effect of the position-dependent electron effective massm ^*  (z) is commonly neglected in the determination of these two intersubband device parameters. This approach is nearly valid for single-well devices in the GaAs/Al _xGa_1 − x As material system. However, in multiple-coupled-well devices, the variable nature of the effective mass must be taken into account. In material systems other than the ones based on GaAs, failure to include the position-dependence of the electron mass may give rise to significant errors in the values of the Fermi energy and other device parameters such as the intersubband absorption coefficient. In this paper, the effects ofm ^*  (z) on the Fermi level and the intersubband charge distribution are explored and quantified.Theoretical formulation for the intersubband Fermi energy and the subband electron distribution, with the inclusion of position-dependent electron mass, is presented. The eigenenergies of the intersubband structures are obtained by solving the single-band effective-mass Schroedinger equation using the argument principle method. The electron distribution and the Fermi energy are calculated using both the approximate method ( m₀ ^* ) and the rigorous formulation [ m ^* (z)], and the relative differences in the corresponding values are presented. It is demonstrated that these differences are small in the GaAs/Al _xGa_1 − x As material system, but can become very significant in other materials. In addition, the variable nature of carrier effective mass plays an important role in other types of devices such as interband quantum well photodetectors and lasers that employ optical transitions between the valence and the conduction bands. Electronic devices such as the resonant tunneling diode are also affected by the position-dependence of carrier mass and thus the results are applicable to both optoelectronic and electronic quantum devices.     

Optical properties of an off-center hydrogenic impurity in a spherical quantum dot with Gaussian potential

Optical absorption coefficients and refractive index changes associated with intersubband transition of an off-center hydrogenic impurity in a spherical quantum dot (QD) with Gaussian confinement potential are theoretically investigated. Our results show that the optical absorption coefficients in a spherical QD are 2–3 orders of magnitude higher than those in quantum wells and are 2–3 orders smaller than those in a disk-like QD. It is found that the optical absorptions and the optical refractive index are strongly affected not only by the confinement barrier height, dot radius but also by the position of the impurity.     

Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: Effects of applied electromagnetic fields

In this work we are studying the intense laser effects on the electron-related linear and nonlinear optical properties in GaAs–Ga_1?xAl_xAs quantum wells under applied electric and magnetic fields. The calculated quantities include linear optical absorption coefficient and relative change of the refractive index, as well as their corresponding third-order nonlinear corrections. The nonlinear optical rectification and the second and third harmonic generation coefficients are also reported. The DC applied electric field is oriented along the hererostructure growth direction whereas the magnetic field is taken in-plane. The calculations make use of the density matrix formalism to express the different orders of the dielectric susceptibility. Additionally, the model includes the effective mass and parabolic band approximations. The intense laser effects upon the system enter through the Floquet method that modifies the confinement potential associated to the heterostructure. The results correspond to several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation. They suggest that the nonlinear optical absorption and optical rectification are nonmonotone functions of the dimensions of the heterostructure and of the external perturbations considered in this work.     

The effects of pressure and hydrogenic donor impurity on the linear and nonlinear optical properties of a GaAs/GaAlAs nanowire superlattice

The combined effects of hydrostatic pressure, presence and absence of hydrogenic donor impurity are investigated on the linear and nonlinear optical absorption coefficients and refractive index changes of a GaAs/Ga_1−xAl_xAs nanowire superlattice. The wave functions and corresponding eigenvalues are calculated using finite difference method in the framework of effective mass approximation. Analytical expressions for the linear and third order nonlinear optical absorption coefficients and refractive index changes are obtained by means of compact-density matrix formalism. The linear and third order nonlinear absorption coefficient and refractive index changes are presented as a function of photon energy for different values of hydrostatic pressure, incident photon intensity and relaxation time in the presence and absence of hydrogenic donor impurity. It is found that the linear and third order nonlinear absorption coefficients, refractive index changes and resonance energy are quite sensitive to the presence of impurity and applied hydrostatic pressure. Moreover, the saturation in optical spectrum and relaxation time can be adjusted by increasing pressure in presence of impurity whereas the effect of hydrostatic pressure is negligible in the case of absence of hydrogenic impurity.