第一性原理研究[112]硅锗异质结纳米线的电子结构与光学性质

基于密度泛函理论体系下的广义梯度近似,本文利用第一性原理方法着重研究了[112]晶向硅锗异质结纳米线的电子结构与光学性质.能带结构计算表明:随着锗原子数的增加,[112]晶向硅锗纳米线的带隙逐渐减小;对Si_(36)Ge_(24)H_(32)纳米线施加单轴应变,其能量带隙随拉应变的增加而单调减小.光学性质计算则表明:随着锗原子数的增加,[112]硅锗纳米线介电函数的峰位和吸收谱的吸收边均向低能量区移动;而随着拉应变的增大,吸收系数峰值呈现出逐渐减小的趋势,且峰位不断向低能量区移动,上述结果说明锗原子数的增加与施加拉应变均导致[112]硅锗纳米线的吸收谱产生红移.本文的研究为硅锗异质结纳米线光电器件研究与设计提供一定的理论参考.     

Structures of Si and Ge nanowires in the subnanometer range

We report an ab initio investigation of several structures of pristine Si and Ge nanowires with diameters between 0.5 and 2.0 nm. We consider nanowires based on the diamond structure, high-density bulk structures, and fullerenelike structures. Our calculations indicate a transition from sp3 geometries to structures with higher coordination, for diameters below 1.4 nm. We find that diamond-structure nanowires are unstable for diameters smaller than 1 nm, undergoing considerable structural transformations towards amorphouslike wires. For diameters between 0.8 and 1 nm, filled-fullerene wires are the most stable. For even smaller diameters (approximately 0.5 nm), we find that a simple hexagonal structure is particularly stable for both Si and Ge.     

CaAl2X2(X=C,Si,Ge)的稳定性、电子结构和力学性质研究

由于AB2X2类型的材料在储能、催化、超导、发光等领域都有着潜在应用价值,因此得到了广泛关注。本文通过第一原理方法计算分析了CaAl2X2(X=C,Si,Ge)的材料声子谱、电子结构、力学性质和硬度,其主要结果为：材料晶格常数的计算结果和实验值都与理论结构符合的很好;CaAl2C2和CaAl2Si2材料的声子谱没有出现虚频,表明这两种材料在热力学及动力学上是稳定的;计算的材料的能带结构表明,CaAl2Si2和 CaAl2Ge2具有金属特性, CaAl2C2具有较小带隙的间接半导体材料。这类材料的金属特性,热稳定性及力学各项异性特征对于其作为二次电池活性电极有着重要影响,因此本文的研究结果可为相关领域的研究提供较好的理论依据及参考。     

中子嬗变掺杂前后Ge纳米晶的结构和性质

采用第一性原理计算模拟Ge纳米晶在中子嬗变掺杂(NTD)后受空位、O和As杂质的影响.结果表明,退火方法引入的O并不能消除纳米晶中的辐照致空位缺陷的影响,而NTD 产生的As掺杂能补偿这些空位缺陷并消除禁带中产生的杂质能级,从而改善半导体掺杂性能.计算还发现,由于较高的电负性,纳米晶中O对Ge原子较强的吸附作用阻止了空位的形成,导致与缺陷相关的非辐射发光中心的浓度减小,发光效率提高,因此中子辐照掺杂前的高温退火处理是非常有必要的.计算较好地解释了已报道的实验结果. 关键词： Ge纳米晶 中子嬗变掺杂 第一性原理 空位缺陷     

First-principle investigation on the thermodynamics of X_2N_2O(X = C,Si, Ge) compounds

The structures under different pressures, elastic properties, electronic structures and lattice vibrations of the X_2N_2O(X = C, Si, Ge) compounds are investigated by using the first-principle method. Based on the phonon density of state,the thermodynamic properties of the present compounds are studied under different pressures and at different temperatures. The structural parameters including the bond lengths and bond angles are in agreement with available experimental measurements and theoretical calculations. We employ the elastic theory to calculate the nine independent elastic constants(C_(ij)) and the derived elastic moduli(B, G, E, v). Results indicate that these X_2N_2O(X = C, Si, Ge) compounds are mechanically stable and show the brittle behaviors. The electronic properties of the present compounds are analyzed by using the band structure and density of states. The phonon dispersion calculations imply that the present compounds are dynamically stable. Based on the quasi-harmonic approximation, the calculations of the specific heat indicate that the temperature in a range of 0 K–1500 K and pressure in a range of 0 GPa–40 GPa have a large effect on the thermal quantities of Ge_2N_2O,compared with on those of the C_2N_2O and Si_2N_2O compounds.     

MgSiO3钙钛矿高温高压特性的第一性原理研究

本文采用第一性原理方法,计算了MgSiO3钙钛矿在零温和0 ~ 150 GPa静水压范围内的晶体结构和弹性模量,并利用准简谐近似Debye模型,拟合三阶Birch-Murnaghan物态方程得到了其高温高压下的热力学性质。通过与现有的理论和实验的结果数据比较,确认在0 ~ 2000 K的温度区间内,第一性原理计算结合Debye模型能够较可靠地模拟在下地幔压力范围内MgSiO3钙钛矿的热力学性质。     

Indirect to direct gap transition in low-dimensional nanostructures of Silicon and Germanium

The electronic band structures of Si and Ge low-dimensional nanostructure such as nanofilms and nanowires have been calculated using first principles based on density functional theory (DFT) with the generalized gradient approximation (GGA). The calculation results show that a direct band gap can be obtained from Si orientation [100] or in Ge orientation [111] confined low dimensional nanostructure. However, an indirect band gap is still kept in the Si orientation [111] or in the Ge orientation [110] confined low dimensional nanostructure. The calculation results are interesting and the transition mechanism from indirect to direct band gap in low dimensional nanostructures is given in the physical structures model.     

MgSiO_3钙钛矿高温高压特性的第一性原理研究

本文采用第一性原理方法,计算了MgSiO_3钙钛矿在零温和0～150 GPa静水压范围内的晶体结构和弹性模量,并利用准简谐近似Debye模型,拟合三阶Birch-Murnaghan物态方程得到了其高温高压下的热力学性质.通过与现有的理论和实验的结果数据比较,确认在0～2000 K的温度区间内,第一性原理计算结合Debye模型能够较可靠地模拟在下地幔压力范围内MgSiO_3钙钛矿的热力学性质.     

Ab initio study of structural and mechanical property of solid molecular hydrogens

Ab initio calculations based on density functional theory (DFT) were performed to investigate the structural and the elastic properties of solid molecular hydrogens (H₂). The influence of molecular axes of H₂ on structural relative stabilities of hexagonal close-packed (hcp) and face-centered cubic (fcc) structured hydrogen molecular crystals were systematically investigated. Our results indicate that for hcp structures, disordered hydrogen molecule structure is more stable, while for fcc structures, Pa3 hydrogen molecular crystal is most stable. The cohesive energy of fcc H₂ crystal was found to be lower than hcp. The mechanical properties of fcc and hcp hydrogen molecular crystals were obtained, with results consistent with previous theoretical calculations. In addition, the effects of zero point energy (ZPE) and van der Waals (vdW) correction on the cohesive energy and the stability of hydrogen molecular crystals were systematically studied and discussed.     

Electronic structure,mechanical and optical properties of ternary semiconductors Si1-xGexC (X = 0, 0.25, 0.50, 0.75, 1)

The electronic structure of silicon carbide with increasing germanium content have been examined using first principles calculations based on density functional theory. The structural stability is analysed between two different phases, namely, cubic zinc blende and hexagonal phases. The zinc blende structure is found to be the stable one for all the Si_1-xGe_xC semiconducting carbides at normal pressure. Effect of substitution of Ge for Si in SiC on electronic and mechanical properties is studied. It is observed that cubic SiC is a semiconductor with the band gap value 1.243?eV. The band gap value of SiC is increased due to the substitution of Ge and the band gap values of Si _0.75 Ge _0.25 C, Si _0.50 Ge _0.50 C, Si _0.25 Ge _0.75 C and GeC are 1.322 eV, 1.413 eV, 1.574 eV and 1.657?eV respectively. As the pressure is increased, it is found that the energy gap gets decreased for Si_1-x Ge_xC (X?=?0, 0.25, 0.50, 0.75, 1). The elastic constants satisfy the Born – Huang elastic stability criteria. The bulk modulus, shear modulus, Young’s modulus and Poisson’s ratio are also calculated and compared with the other available results.     

Morphological and compositional evolution of the ge/si(001) surface during exposure to a si flux

By using scanning tunneling microscopy we found that the surface reconstruction of Ge/Si(001) epilayers evolves from (M x N) to (2 x N), and eventually to (2 x 1), during exposure to a Si flux. This sequence appears to be just the inverse of that observed during the growth of Ge or SiGe alloys on Si(001). However, molecular dynamics simulations supported by ab initio calculations allow us to interpret this morphological evolution in terms of Si migration through the epilayer and complex Si-Ge intermixing below the top Ge layer.     

NbSi2奇异高压相及其热力学性质的第一性原理研究

采用基于粒子群优化算法的结构预测程序CALYPSO, 并结合第一性原理的VASP程序, 在175 GPa发现NbSi₂的奇异立方高压相. 在此结构中, Nb原子形成金刚石结构, 而Si原子则形成正四面体镶嵌在金刚石结构中. 声子谱计算结果表明该结构是动力学稳定的. 电子结构分析表明, 六角相和立方相NbSi₂均为金属, 对金属性贡献较大的是Nb原子, 而且Nb和Si原子之间存在明显的p-d杂化现象, 电荷更多地聚集在Si四面体中. 利用“应力应变”方法, 计算了NbSi₂的弹性常数, 分析了其体积模量、剪切模量、杨氏模量和德拜温度等热动力学性质随压力的变化并进行了详细的讨论. 根据剪切模量和体积模量的比值分析了NbSi₂两种相结构的脆性和延展性, 发现压力会导致六角相NbSi₂的延展性增加, 但对立方相结构的延展性影响较小; 采用经验算法计算了NbSi₂两种相结构硬度变化情况, 结合这一比值进行了详细的分析. 弹性各向异性计算结果表明, 随着压力增加, 六角结构的各向异性增强, 而立方结构的各向异性减小.     

用RHEED强度振荡锁相外延控制Ge/Si超晶格的生长

观察了Ge,Ge/Si交替外延时的反射式高能电子衍射(RHEED)强度振荡现象,并由此研究了Si(100)和Si(111)衬底上分子束外延Ge,Ge/Si超薄叠层的生长行为和生长特性。利用RHEED强度振荡,锁相控制生长了Ge(2ML)/Si(2ML),Ge(4ML)/Si(4ML)超薄超晶格。 关键词：     

Ab initio simulations on the atomic and electronic structure of single-walled BN nanotubes and nanoarches

To simulate the perfect single-walled boron nitride nanotubes and nanoarches with armchair- and zigzag-type chiralities and uniform diameter of ∼5 nm, we have constructed their one-dimensional (1D) periodic models. In this study, we have compared the calculated properties of nanotubes with those for both hexagonal and cubic phases of bulk: bond lengths, binding energies per B-N bond, effective atomic charges as well as parameters of total and projected one-electron densities of states. For both phases of BN bulk, we have additionally verified their lattice constants. In the density functional theory (DFT), calculations performed using formalism of the localized Gaussian-type atomic functions as implemented in the CRYSTAL-06 code we have applied Hamiltonians containing either PWGGA or hybrid (DFT+HF) B3PW exchange-correlation functionals. After calculation of Hessian matrix for the optimized structures of BN bulk (both phases) and nanotubes (both chiralities) using the CRYSTAL code we have estimated their normal phonon modes within the harmonic approximation. Applying both atomistic and continuum models we have calculated the elastic energies and moduli for SW BN nanoarches. Our calculations clearly show a reproducibility of the atomic structure, effective charges and total energy, as well as phonon and elastic properties when using either PWGGA or hybrid B3PW Hamiltonians. On other hand, there is a high sensitivity of the discrete energy spectra parameters (including band gap) to the choice of the first principles approach (the hybrid method reproduce them noticeably better).     

Adsorption of Au and Pt dimers on Ge(001) and Si(001): A first-principles study

Based on first-principles total energy calculations, the adsorption of Au and Pt dimers on Ge(001) and Si(001) surfaces are investigated. We find that the Au dimer on both Ge(001) and Si(001) show a similar result with the most stable configuration C, parallel to the substrate dimer row and located in the trough between the dimer rows, and the most unstable configuration A, parallel to and on the top of the substrate dimer row. On the other hand, Pt dimer on Ge(001) prefer the configuration D, perpendicular to the substrate dimer row and located in the trough between the dimer rows, while Pt dimer on Si(001) prefer both A and D configurations. The different structural stabilities of Au and Pt dimers on Ge(001) and Si(001) surfaces are attributed to the different electronic structures of Au and Pt atoms. These results are discussed with the reported data for III, IV and V group elements on Si(001).     

半导体量子点形成临界尺寸的定量预测

半导体量子点是一类具有显著量子效应的零维量子结构,自组的模型系统,表现为Stranski-Krastanov型生长.其特征为,当超过3—4个Ge单原子层（浸润层）时,则由二维层状生长转变为三维岛状生长.Ge/Si量子点是初期形成的与衬底共格无位错的三维岛,岛表面由{105}晶面组成.文章作者利用第一性原理计算和介观理论模拟相结合的连续式多尺度（sequential multi-scale）方法,第一次对纯Ge和GeSi合金量子点在Si(001)表面的成核临界尺寸进行了定量的理论预测,同时研究了岛边缘的应力不连续对量子点稳定性的影响,实现了对Ge/Si量子点的形成和稳定性定量的理论研究.     

Li原子修饰笼型Si6团簇的结构和储氢性能

利用杂化密度泛函B3LYP方法, 在6-311+G(d, p)基组水平上对Si6和Li修饰的Si6团簇的几何结构和电子性质及储氢性能进行模拟计算和理论研究. 结果表明, Si6团簇最低能量构型为笼型结构, 纯Si6团簇不能有效吸附氢分子. Li原子的引入显著改善了Si6团簇的储氢能力. 以两个Li原子端位修饰Si6团簇为载体, 其氢分子的平均吸附能为1.692~2.755 kcal/mol, 每个Li原子周围可以有效吸附五个氢分子, 储氢密度可达9.952wt%. 合适的吸附能和较高储氢密度表明Li修饰Si6团簇有望成为理想的储氢材料.     

Li原子修饰笼型Si_6团簇的结构和储氢性能

利用杂化密度泛函B3LYP方法,在6-311+G(d,p)基组水平上对Si_6和Li修饰的Si_6团簇的几何结构和电子性质及储氢性能进行模拟计算和理论研究.结果表明,Si_6团簇最低能量构型为笼型结构,纯Si_6团簇不能有效吸附氢分子.Li原子的引入显著改善了Si_6团簇的储氢能力.以两个Li原子端位修饰Si_6团簇为载体,其氢分子的平均吸附能为1.692~2.755 kcal/mol,每个Li原子周围可以有效吸附五个氢分子,储氢密度可达9.952 wt%.合适的吸附能和较高储氢密度表明Li修饰Si_6团簇有望成为理想的储氢材料.     

X-rays investigation of the α→β phase transition in the GexSi1−x solid solutions at high pressure

We have investigated the α → β phase transition in the solid solution Ge_xSi_1?x using a diamond anvil cell and the energy dispersive x-ray diffraction technique. The transition pressure p_T obtained from samples with x=0, 0.345, 0.543, 0.774, 0.897 and 1 shows a clear nonlinear dependence on the Ge concentration x; p_T is always larger than expected on the basis of a linear interpolation between the p_T-values of pure Si and Ge. In addition to that we have obtained the volume of the α-phase (diamond structure) and of the β-phase (white- tin structure) at p_T. The first one is linear in x, whereas the second one exhibits a nonlinear x-dependence. These results are discussed on the basis of recent pseudopotential calculations by Soma et al.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.